摘要:
Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
摘要:
Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.
摘要:
The present invention relates to a digital/analog converter. The digital/analog converter includes a divided-voltage generating section that divides a reference supply voltage through the voltage distribution; a decoder section that receives a digital signal so as to output a decoded selection signal; a first divided-voltage selecting section that selects and outputs a plurality of divided voltages among the divided-voltages generated from the divided-voltage generating section on the basis of the selection signal output from the decoder section; a second divided-voltage selecting section that selects and outputs a plurality of divided-voltages among the divided-voltages output from the first divided-voltage selecting section on the basis of the selection signal output from the decoder section; a divided-voltage storing section that charges and discharges the plurality of divided-voltages output from the second divided-voltage selecting section; a third divided-voltage selecting section that selects a predetermined voltage among the divided-voltages discharged from the divided-voltages storing section on the basis of the selection signal output from the decoder; and a voltage output section that outputs the predetermined voltage selected from the third divided-voltage selecting section.
摘要:
The present invention relates to a temperature-compensated bias source circuit. The temperature-compensated bias source circuit includes a bandgap reference circuit that outputs a first temperature-compensated reference voltage and a second reference voltage having a positive slope with respect to temperature; a voltage/current converter that converts the first and second reference voltages into a reference current; and an output buffer that is connected to the bandgap reference circuit and the voltage/current converter and buffers the first and second reference voltages, output by the bandgap reference circuit, so as to output to the voltage/current converter.
摘要:
Provided is an output buffer circuit having a slew rate increasing part configured with a switching element. The output buffer circuit can obtain an output voltage having a high slew rate even though a smaller amount of a bias current than that required in a conventional output buffer is used. Therefore, the output buffer circuit can reduce power consumption. In the output buffer circuit with a compensation capacitive load, an input part has two input terminal receiving differential input voltage signals, and an output part increases a gain of the differential input voltages. A current source biases the output part, and a slew rate increasing part is connected to the output part and the compensation capacitive load. The slew rate increasing part includes a switching element to increase a slew rate of the output buffer circuit.
摘要:
An output buffer circuit includes an input stage of which one end receives an input voltage and the other end receives an output voltage; a class AB output stage that increases a current flowing in the output stage when the difference between the input and output voltages is larger than 0; a floating current source that biases the class AB output stage; a summing circuit that is connected to the input stage, the floating current source, and the class AB output stage so as to sum up the current supplied from the input stage and the internal current supplied from the floating current source; and an offset compensating circuit that is connected to the input stage and is composed of a plurality of switching elements and resistors so as to detect an offset voltage to compensate.
摘要:
A high resolution digital/analog converting apparatus for a spatial optical modulator includes a resistor string including a plurality of resistors connected to each other in series between operating voltage terminals to divide operating voltages into a plurality of voltages using the plural resistors, a decoder to provide switching signals corresponding to digital signals, and a switch unit to select two voltages from the plural voltages divided by the resistor string according to the switching signal of the decoder. The two voltages are adjacent to each other. Moreover, the digital/analog converting apparatus may include a digital/analog converter to perform a digital/analog conversion of the two voltages.
摘要:
A digital/analog converter includes a first divided-voltage generating section which divides a reference supply voltage through the voltage distribution, a decoder section which receives a digital signal so as to output a decoded selection signal, a first divided-voltage selecting section which selects and outputs a plurality of divided voltages among the divided voltages generated from the first divided-voltage generating section on the basis of the selection signal output from the decoder section, a second divided-voltage selecting section which selects and outputs a plurality of divided voltages among the divided-voltages output from the first divided-voltage selecting section on the basis of the selection signal output from the decoder section, a second divided-voltage generating section which divides the plurality of divided-voltages output from the second divided-voltage selecting section, a third divided-voltage selecting section which selects a predetermined voltage among the divided-voltages output from the second divided-voltages generating section on the basis of the selection signal output from the decoder, and a voltage output section which outputs the predetermined voltage selected from the third divided-voltage selecting section.
摘要:
Provided is an output buffer circuit having a slew rate increasing part configured with a switching element. The output buffer circuit can obtain an output voltage having a high slew rate even though a smaller amount of a bias current than that required in a conventional output buffer is used. Therefore, the output buffer circuit can reduce power consumption. In the output buffer circuit with a compensation capacitive load, an input part has two input terminal receiving differential input voltage signals, and an output part increases a gain of the differential input voltages. A current source biases the output part, and a slew rate increasing part is connected to the output part and the compensation capacitive load. The slew rate increasing part includes a switching element to increase a slew rate of the output buffer circuit.
摘要:
A gas adsorption medium and an adsorption pump apparatus having the same are provided. The gas adsorption medium includes a multi-layered structure of which the layers formed of a material are spaced apart from each other, wherein an ion valence of the material is variable and the material includes extra electrons not participating in a chemical bond, and the adsorption pump apparatus includes the gas adsorption medium as described above. The gas adsorption medium can secure a large surface area by securing a space between the layers so that efficiency of the gas adsorption ability can be enhanced.