Integrated circuit devices with metal-insulator-metal capacitors
    4.
    发明授权
    Integrated circuit devices with metal-insulator-metal capacitors 有权
    具有金属 - 绝缘体 - 金属电容器的集成电路器件

    公开(公告)号:US06992346B2

    公开(公告)日:2006-01-31

    申请号:US10807000

    申请日:2004-03-23

    IPC分类号: H01L29/096

    摘要: A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.

    摘要翻译: 导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。 欧姆图案设置在插头的焊盘部分上,并且阻挡图案设置在欧姆图案上。 凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。 电容器电介质层符合第一电容器电极的表面,并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。 欧姆图案的侧壁,接触塞的阻挡图案和焊盘部分可以是基本上共面的,并且该器件还可以包括符合至少欧姆图案的侧壁,阻挡图案和焊盘部分的蚀刻停止层 接触插头。 描述相关的制造方法。

    Methods of forming integrated circuit devices with metal-insulator-metal capacitors
    6.
    发明申请
    Methods of forming integrated circuit devices with metal-insulator-metal capacitors 审中-公开
    用金属 - 绝缘体 - 金属电容器形成集成电路器件的方法

    公开(公告)号:US20060060907A1

    公开(公告)日:2006-03-23

    申请号:US11273505

    申请日:2005-11-14

    IPC分类号: H01L27/108

    摘要: A conductive contact plug extends through an opening in the dielectric layer to contact the substrate and includes a widened pad portion extending onto the dielectric layer adjacent the opening. An ohmic pattern is disposed on the pad portion of the plug, and a barrier pattern is disposed on the ohmic pattern. A concave first capacitor electrode is disposed on the barrier pattern and defines a cavity opening away from the substrate. A capacitor dielectric layer conforms to a surface of the first capacitor electrode and a second capacitor electrode is disposed on the capacitor dielectric layer opposite the first capacitor electrode. Sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug may be substantially coplanar, and the device may further include an etch stopper layer conforming to at least sidewalls of the ohmic pattern, the barrier pattern and the pad portion of the contact plug. Related fabrication methods are described.

    摘要翻译: 导电接触插塞延伸穿过电介质层中的开口以接触衬底并且包括延伸到邻近开口的电介质层上的加宽焊盘部分。 欧姆图案设置在插头的焊盘部分上,并且阻挡图案设置在欧姆图案上。 凹陷的第一电容器电极设置在阻挡图案上并且限定了远离基板的空腔。 电容器电介质层符合第一电容器电极的表面,并且第二电容器电极设置在与第一电容器电极相对的电容器电介质层上。 欧姆图案的侧壁,接触塞的阻挡图案和焊盘部分可以是基本上共面的,并且该器件还可以包括符合至少欧姆图案的侧壁,阻挡图案和焊盘部分的蚀刻停止层 接触插头。 描述相关的制造方法。