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公开(公告)号：US5300901A
公开(公告)日：1994-04-05
申请号：US910879
申请日：1992-07-10
申请人： Harald Krummel , Ewald Morsen , Helge Vogt , Gunter Weidmann
发明人： Harald Krummel , Ewald Morsen , Helge Vogt , Gunter Weidmann
IPC分类号： H01J23/20 , H01J37/32 , H01P1/28 , H01P1/30 , H01P3/06 , H01P5/02 , H01P5/08 , H01P5/103 , H01P7/04 , H05H1/46
摘要： An arrangement for coupling microwave energy with a reaction chamber, including electrically stable tuning and being, within limits, tolerant against changes in critical dimensions and power fluctuations. A coaxial line between a hollow waveguide and the reaction chamber is of such a structure that it forms, at least together with the reaction chamber, a loss resonator for the microwave frequency employed. The coaxial line can comprise an absorber or, alternatively, can be made of a poorly conductive material. There is also the possibility of downgrading the quality of the resonator by leaving an annular gap between a metal plate and an outer conductor section.
摘要翻译： 用于将微波能量与反应室耦合的装置，包括电稳定的调谐并且在限度内容许关键尺寸和功率波动的变化。 中空波导和反应室之间的同轴线具有至少与反应室一起形成用于所用微波频率的损耗谐振器的结构。 同轴线可以包括吸收体，或者可以由导电性差的材料制成。 也可能通过在金属板和外部导体部分之间留下环形间隙来降低谐振器的质量。
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公开(公告)号：US5308650A
公开(公告)日：1994-05-03
申请号：US909366
申请日：1992-07-06
申请人： Harald Krummel , Ewald Morsen , Volker Paquet , Helge Vogt , Gunther Weidmann
发明人： Harald Krummel , Ewald Morsen , Volker Paquet , Helge Vogt , Gunther Weidmann
IPC分类号： C23C4/00 , C23C16/50 , C23C16/511 , C23C16/515 , H01J37/32 , H01L21/31 , H05B7/18 , H05H1/24 , H05H1/46 , C23C14/24
CPC分类号： H01J37/32192 , H01J37/32009 , H05H1/46 , H01J2237/3321
摘要： A process and an apparatus for economically igniting microwave plasmas wherein no undesirable reaction products in the reaction chamber impair the quality of cladding produced thereby. The plasma is ignited on the gas outlet side of the reaction chamber by means of a high voltage that is applied at least for a short period of time. High-frequency pulses or low-frequency high voltages with frequencies in the range from 10 to 100 kHz are utilized. The high voltage is synchronized with the microwave pulses. According to a further process, the microwave pulses are excessively increased for a short time at least at their beginning. Also periodic excessive increases of the microwave pulses are possible A switchable high-voltage source is connected by way of a delay member and a current supply unit to the microwave device The output of the switchable high-voltage source is applied to the gas discharge line of the reaction chamber.
摘要翻译： 用于经济地点燃微波等离子体的方法和装置，其中在反应室中没有不期望的反应产物损害由此产生的包层的质量。 等离子体通过至少施加短时间的高电压在反应室的气体出口侧点燃。 使用频率在10到100 kHz范围内的高频脉冲或低频高电压。 高电压与微波脉冲同步。 根据进一步的处理，微波脉冲至少在其开始时，在短时间内过度增加。 微波脉冲的周期性过度增加也可以通过延迟构件和电流供给单元将可切换高压源连接到微波装置。可切换高压源的输出被施加到 反应室。
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公开(公告)号：US5154943A
公开(公告)日：1992-10-13
申请号：US670420
申请日：1991-03-18
IPC分类号： C23C16/50 , C03C17/00 , C23C16/04 , C23C16/44 , C23C16/455 , C23C16/511 , C23C16/515 , G02B1/10 , G02B5/08
CPC分类号： C23C16/45517 , C03C17/001 , C23C16/045 , C23C16/455 , C23C16/45563
摘要： A plasma-CVD process and apparatus for coating strongly arched, dome-like substrates with a dielectric and/or metallic coating system on the inside and/or outside face. The thickness of the gas layer to be reacted above the face to be coated is adjusted such as with the aid of the displacement body, so that the extent of the homogeneous reaction or formation occurring in the gas layer during a plasma phase is harmless for the desired coating quality. Strongly arched substrates coated with a uniform coating of highest optical quality and also mechanical, thermal and chemical stability without complicated substrate movement. Specified axial and azimuthal coating thickness profiles can also be superimposed by suitably shaping the displacement body.
摘要翻译： 一种用于在内侧和/或外表面上用电介质和/或金属涂层系统涂覆强拱形，圆顶状基底的等离子体CVD工艺和装置。 要在待涂覆的表面上反应的气体层的厚度例如借助于位移体来调节，使得在等离子体相期间在气体层中发生的均匀反应或形成的程度对于 所需涂层质量。 强大的拱形基材涂有均匀涂层，具有最高的光学质量，以及机械，热和化学稳定性，无需复杂的基板移动。 指定的轴向和方位涂层厚度轮廓也可以通过适当地成形位移体来叠加。
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公开(公告)号：US5324361A
公开(公告)日：1994-06-28
申请号：US900716
申请日：1992-06-18
IPC分类号： C23C16/44 , C03C17/00 , C23C14/50 , C23C16/455 , C23C16/50 , C23C16/511 , C23C16/54
CPC分类号： C23C16/45517 , C03C17/004 , C23C16/4558 , C23C16/54
摘要： To coat several cap-shaped substrates simultaneously in an economical way with the same and high quality, several coating chambers are connected into a cap coating station by a symmetrical gas line system with a common gas generator and by another gas line system with a common vacuum pump. The gas lines have a cross sectional area Q.sub.A (x) and a cross sectional form Q.sub.F (x) which as a function of the distance x from the gas generator or from the vacuum pump are substantially the same. In this way, the same flow conditions are assured in all coating chambers. The gas line systems can be formed by precision pipes or by a stack of solid plates, in which gas ducts are introduced by boring or milling. Several cap coating stations, which are connected by suitable symmetrical gas line systems with a common vacuum pump and a common gas generator, can be combined to form a unit.
摘要翻译： 为了以相同和高质量的经济方式同时涂覆几个帽形基底，几个涂层室通过具有公共气体发生器的对称气体管线系统和具有共同真空的另一个气体管线系统连接到盖涂层站中 泵。 气体管线具有截面面积QA（x）和横截面形式QF（x），其作为来自气体发生器或从真空泵的距离x的函数基本上相同。 以这种方式，在所有涂层室中确保相同的流动条件。 气体管线系统可以由精密管道或一堆固体板形成，其中通过镗孔或铣削将气体管道引入。 通过合适的对称气体管线系统与普通真空泵和普通气体发生器连接的几个盖涂站可以组合形成一个单元。
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公开(公告)号：US5236511A
公开(公告)日：1993-08-17
申请号：US784342
申请日：1991-10-29
IPC分类号： C03C17/00 , C23C16/04 , C23C16/44 , C23C16/455
CPC分类号： C23C16/45517 , C03C17/001 , C23C16/045 , C23C16/455 , C23C16/45563
摘要： A plasma-CVD process and apparatus for coating strongly arched, dome-like substrates with a dielectric and/or metallic coating system on the inside and/or outside face. The thickness of the gas layer to be reacted above the face to be coated is adjusted such as with the aid of the displacement body, so that the extent of the homogeneous reaction or formation occurring in the gas layer during a plasma phase is harmless for the desired coating quality. Strongly arched substrates coated with a uniform coating of highest optical quality and also mechanical, thermal and chemical stability without complicated substrate movement. Specified axial and azimuthal coating thickness profiles can also be superimposed by suitably shaping the displacement body.
摘要翻译： 一种用于在内侧和/或外表面上用电介质和/或金属涂层系统涂覆强拱形，圆顶状基底的等离子体CVD工艺和装置。 要在待涂覆的表面上反应的气体层的厚度例如借助于位移体来调节，使得在等离子体相期间在气体层中发生的均匀反应或形成的程度对于 所需涂层质量。 强大的拱形基材涂有均匀涂层，具有最高的光学质量，以及机械，热和化学稳定性，无需复杂的基板移动。 指定的轴向和方位涂层厚度轮廓也可以通过适当地成形位移体来叠加。
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