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    Semiconductor laser and manufacturing method therefor
    1.
    发明授权
    Semiconductor laser and manufacturing method therefor 失效
    半导体激光器及其制造方法

    公开(公告)号：US5392304A

    公开(公告)日：1995-02-21

    申请号：US69855

    申请日：1993-06-01

    申请人： Haruo Tanaka ,  Masato Mushiage ,  Kaoru Kusunoki

    发明人： Haruo Tanaka ,  Masato Mushiage ,  Kaoru Kusunoki

    IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S3/04

    CPC分类号： H01S5/0224 ,  H01S5/0217 ,  H01S5/02212 ,  H01S5/02248 ,  H01S5/02296 ,  H01S5/0425 ,  H01S5/2231

    摘要： A semiconductor laser adaptable for a 3-beam method, including a semiconductor laser chip bonded on a primary plane of a flat submount, the semiconductor laser chip having a thickness of 30 to 80 .mu.m is provided. Also provided is a method for manufacturing a semiconductor laser including the steps of: sequentially stacking layers of compound semiconductor materials on a semiconductor substrate to form a semiconductor laser wafer; mechanically abrading the semiconductor substrate to make it thin; subjecting the mechanically abraded face of the semiconductor substrate to a chemical treatment; forming an electrode film on both sides of the semiconductor laser wafer thus treated; and cutting the semiconductor laser wafer into chips and bonding each of the chips on a submount.

    摘要翻译： 一种适用于三光束法的半导体激光器，其包括：结合在平坦基座的主平面上的半导体激光芯片，提供厚度为30〜80μm的半导体激光芯片。 还提供了一种制造半导体激光器的方法，包括以下步骤：在半导体衬底上依次堆叠化合物半导体材料层以形成半导体激光晶片; 机械地研磨半导体衬底以使其变薄; 对半导体基板的机械磨损面进行化学处理; 在如此处理的半导体激光晶片的两侧形成电极膜; 并将半导体激光晶片切割成芯片并将每个芯片接合在基座上。

    Semiconductor laser device
    2.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5235609A

    公开(公告)日：1993-08-10

    申请号：US778550

    申请日：1991-10-18

    申请人： Satoshi Uchida ,  Kaoru Kusunoki ,  Masato Mushiage

    发明人： Satoshi Uchida ,  Kaoru Kusunoki ,  Masato Mushiage

    IPC分类号： H01S5/00 ,  H01S5/10 ,  H01S5/223

    CPC分类号： H01S5/10 ,  H01S5/1064 ,  H01S5/2231

    摘要： A semiconductor laser device comprises: an active layer; a lower clad layer provided below the active layer; an upper clad layer provided above the active layer; and a current blocking layer, provided above the upper clad layer, for limiting an active region of the active layer in a direction along a width to make the active region of a striped form which has a wide portion and a narrow portion. According to the device, coherence of an oscillated laser beam is reduced, thereby to decrease a feedback induced noise when used for a pickup of an optical information recording/reproducing apparatus.

    摘要翻译： 半导体激光器件包括：有源层; 设置在有源层下方的下包层; 设置在有源层上方的上覆层; 以及设置在上包层上方的电流阻挡层，用于限制有源层沿着宽度的方向的有源区，以形成具有宽部分和窄部分的条纹形式的有源区。 根据该装置，减少振荡的激光束的相干性，从而当用于光信息记录/再现装置的拾取时减小反馈感应噪声。

    Optical communication unit
    6.
    发明授权
    Optical communication unit 失效
    光通信单元

    公开(公告)号：US5661581A

    公开(公告)日：1997-08-26

    申请号：US542014

    申请日：1995-10-12

    申请人： Masato Mushiage ,  Naotaro Nakata ,  Yuta Tezen ,  Kenji Okada

    发明人： Masato Mushiage ,  Naotaro Nakata ,  Yuta Tezen ,  Kenji Okada

    IPC分类号： G02B6/42 ,  H04B10/00

    CPC分类号： H04B10/40 ,  G02B6/4246

    摘要： An optical communication unit includes a light emitting element for emitting a transmission signal light; a condenser lens for coupling the transmission signal light from the light emitting element to an optical transmission path; and a light receiving element for receiving a receiving signal light from the optical transmission path. A light emitting surface in the light emitting element is formed by a plane tilted to a perpendicular plane in a substrate surface of a chip in the light emitting element.

    摘要翻译： 光通信单元包括用于发射发射信号光的发光元件; 聚光透镜，用于将来自发光元件的透射信号光耦合到光传输路径; 以及用于接收来自光传输路径的接收信号光的光接收元件。 发光元件中的发光表面由在发光元件中的芯片的衬底表面中的垂直平面倾斜的平面形成。

    Superluminescent diode with offset current injection regions
    7.
    发明授权
    Superluminescent diode with offset current injection regions 失效
    具有偏置电流注入区域的超发光二极管

    公开(公告)号：US5574304A

    公开(公告)日：1996-11-12

    申请号：US394034

    申请日：1995-02-24

    申请人： Masato Mushiage ,  Tatsuo Yamauchi ,  Yukio Shakuda

    发明人： Masato Mushiage ,  Tatsuo Yamauchi ,  Yukio Shakuda

    IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/44 ,  H01L27/15 ,  H01L29/06 ,  H01L31/00

    CPC分类号： H01L33/0045 ,  H01L33/145 ,  H01L33/44

    摘要： A superluminescent diode includes a semiconductor substrate of a first conductivity type. A lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type is provided on the active layer. A current blocking layer of the first conductivity type is buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that it extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.

    摘要翻译： 超发光二极管包括第一导电类型的半导体衬底。 第一导电类型的下包层设置在半导体衬底上。 在下包层上设置有源层。 在有源层上提供与第一导电类型相反的第二导电类型的上包层。 第一导电类型的电流阻挡层埋在上覆层中。 电流阻挡层具有用作电流注入区域的条形槽。 电流注入区域以从芯片的端面延伸到芯片的内部的方式形成，并且其长度短于芯片的长度。 电流阻挡层由具有不大于有源层的带隙能量且不小于有源层的折射率的材料制成，使得在有源层中前进的光是可吸收的。

    Semiconductor laser
    8.
    发明授权
    Semiconductor laser 失效
    半导体激光器

    公开(公告)号：US5933443A

    公开(公告)日：1999-08-03

    申请号：US707532

    申请日：1996-09-04

    申请人： Masato Mushiage ,  Yuta Tezen ,  Minoru Murayama

    发明人： Masato Mushiage ,  Yuta Tezen ,  Minoru Murayama

    IPC分类号： H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/34326 ,  H01S5/205 ,  H01S5/2209

    摘要： A semiconductor laser including a first conductive type of lower clad layer, active layer, a second conductive type of upper first clad layer, the first conductive type of current blocking layer having a stripe shaped open portion, and the second conductive type of upper second clad layer laminated in order on the first conductive type of GaAs substrate, wherein each portion in contact with the lower clad layer, the active layer, the upper first and second clad layer and at least the upper second clad layer of the current blocking layer is composed of a compound semiconductor to be represented by a formula, in which (Al.sub.x Ga.sub.1-x).sub.y In.sub.1-y P (x is 0

    摘要翻译： 一种半导体激光器，包括第一导电类型的下包层，有源层，第二导电型上第一包层，第一导电类型的电流阻挡层具有条形开口部分，以及第二导电类型的上第二包层 层叠在第一导电类型的GaAs衬底上，其中与下包层，有源层，上第一和第二覆层以及当前阻挡层的至少上部第二覆盖层接触的每个部分被组成 的化合物半导体，其中（Al x Ga 1-x）y In 1-y P（x在下和上第一，第二包层中为0

    Superluminescent diode and method for manufacturing the same
    9.
    发明授权
    Superluminescent diode and method for manufacturing the same 失效
    超发光二极管及其制造方法

    公开(公告)号：US5981978A

    公开(公告)日：1999-11-09

    申请号：US671366

    申请日：1996-06-27

    申请人： Masato Mushiage ,  Tatsuo Yamauchi ,  Yukio Shakuda

    发明人： Masato Mushiage ,  Tatsuo Yamauchi ,  Yukio Shakuda

    IPC分类号： H01L33/00 ,  H01L33/14 ,  H01L33/44 ,  H01S3/19

    CPC分类号： H01L33/0045 ,  H01L33/145 ,  H01L33/44

    摘要： A superluminiscent diode includes: a semiconductor substrate of a first conductivity type lower cladding layer of the first conductivity type is provided on the semiconductor substrate. An active layer is provided on the lower cladding layer. An upper cladding layer of a second conductivity type opposite to the first conductivity type bis provided on the active layer. A current blocking layer of the first conductivity type, buried in the upper cladding layer. The current blocking layer has a stripe-shaped groove serving as a current-injection region. The current-injection region is formed in a manner that is extends from an end face of a chip to the inside of the chip, and has a length shorter than that of the chip. The current blocking layer is made of a material having a band gap energy not greater than that of the active layer and a refractive index not smaller than that of the active layer so that light advancing in the active layer is absorbable.

    摘要翻译： 超发光二极管包括：第一导电类型的第一导电型下包层的半导体衬底设置在半导体衬底上。 在下包层上设置有源层。 在有源层上设置与第一导电类型相反的第二导电类型的上包层。 第一导电类型的电流阻挡层，埋在上覆层中。 电流阻挡层具有用作电流注入区域的条形槽。 电流注入区域以从芯片的端面延伸到芯片的内部的方式形成，并且其长度短于芯片的长度。 电流阻挡层由具有不大于有源层的带隙能量且不小于有源层的折射率的材料制成，使得在有源层中前进的光是可吸收的。