公开(公告)号：US08391076B2

公开(公告)日：2013-03-05

申请号：US13040626

申请日：2011-03-04

申请人： Hee Seok Eun ,  Yong June Kim

发明人： Hee Seok Eun ,  Yong June Kim

IPC分类号： G11C16/04

CPC分类号： G11C16/10

摘要： A nonvolatile memory device using interleaving technology is provided. The nonvolatile memory device includes a first controller configured to allocate one of 2N threshold voltage states to N-bit data where N is 2 or a natural number greater than 2, a second controller configured to set a difference between adjacent threshold voltage states among the 2N threshold voltage states so that the difference increases as a threshold voltage increases, and a programming unit configured to form a threshold voltage distribution state corresponding to the allocated threshold voltage state and to program the N-bit data to a multi-level cell. The second controller controls the difference between the adjacent threshold voltage states to equalize the number of read errors for all intersections among the 2N threshold voltage states at the end of life.

摘要翻译： 提供了一种使用交错技术的非易失性存储器件。 非易失性存储器件包括：第一控制器，被配置为将2N个阈值电压状态中的一个分配给N为2或大于2的自然数的N位数据;第二控制器，被配置为将2N的阈值电压状态之间的差设定为2N 阈值电压状态使得差异随阈值电压增加而增加，并且编程单元被配置为形成与所分配的阈值电压状态相对应的阈值电压分布状态，并将N位数据编程到多电平单元。 第二控制器控制相邻阈值电压状态之间的差异，以平衡在寿命结束时的2N个阈值电压状态之间的所有交点的读取误差的数量。

公开(公告)号：US08516183B2

公开(公告)日：2013-08-20

申请号：US13114337

申请日：2011-05-24

申请人： Hee Seok Eun ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

发明人： Hee Seok Eun ,  Hong Rak Son ,  Jong Ha Kim ,  Young June Kim ,  Seong Hyeog Choi

IPC分类号： G06F12/00

CPC分类号： G11C11/5642 ,  G06F12/0246 ,  G06F2212/7209 ,  G11C16/3404 ,  G11C16/349

摘要： A method of estimating a read level for a memory device includes calculating first information corresponding to at least one among information about the number of cells having a particular logic level in data to be programmed and information about the number of cells having a particular cell state and storing the first information during a program operation; reading the data based on a threshold level that has been set and calculating second information about the number of cells in at least one state defined by the threshold level with respect to the read data; calculating third information about the number of cells in the at least one state, which corresponds to the second information, using a probability based on the first information; comparing the second information with the third information; and determining whether to change the threshold level according to the comparison result.

摘要翻译： 一种估计存储器件的读取电平的方法包括：计算对应于关于要编程的数据中具有特定逻辑电平的单元的数量的信息中的至少一个的信息的第一信息以及关于具有特定单元状态的单元的数量的信息，以及 在程序操作期间存储第一信息; 基于已经设置的阈值水平读取数据，并且相对于读取的数据计算关于由阈值水平定义的至少一个状态中的单元数量的第二信息; 使用基于所述第一信息的概率来计算与所述第二信息对应的所述至少一个状态下的小区的数量的第三信息; 将第二信息与第三信息进行比较; 以及根据比较结果确定是否改变阈值水平。

公开(公告)号：US08856621B2

公开(公告)日：2014-10-07

申请号：US13606188

申请日：2012-09-07

申请人： Hee Seok Eun ,  Jae Hong Kim ,  Hyung Joon Park ,  Young Kwang Yoo

发明人： Hee Seok Eun ,  Jae Hong Kim ,  Hyung Joon Park ,  Young Kwang Yoo

IPC分类号： G11C29/00 ,  G11C11/34 ,  G06F11/10

CPC分类号： G06F11/1072

摘要： A nonvolatile memory device comprises a memory controller having a memory cell status estimator that generates status estimation information indicating the status of a memory cell based on status register data, a coupling group index selector configured to generate a select signal for selecting a page and coupling group index from the status estimation information, and a memory cell status value generator configured to map the status estimation information to the data reliability decision bits and the coupling group index and generate a status value of the memory cell for error correction code decoding.

摘要翻译： 非易失性存储器件包括存储器控制器，其具有存储单元状态估计器，其基于状态寄存器数据产生指示存储器单元的状态的状态估计信息;耦合组索引选择器，被配置为生成用于选择页面的选择信号和耦合组 以及存储单元状态值生成器，被配置为将状态估计信息映射到数据可靠性判定位和耦合组索引，并且生成用于纠错码解码的存储单元的状态值。

公开(公告)号：US08547752B2

公开(公告)日：2013-10-01

申请号：US13198750

申请日：2011-08-05

申请人： Hee Seok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

发明人： Hee Seok Eun ,  Jae Hong Kim ,  Kyoung Lae Cho

IPC分类号： G11C11/34

CPC分类号： G11C11/5628 ,  G11C16/26 ,  G11C16/3418

摘要： A method of reading data in a non-volatile memory device. The method includes reading a plurality of memory cells of a first page in a memory cell array using a first read level, reading a plurality of memory cells of a second page adjacent to the memory cells of the first page using a second read level, determining whether a state of each memory cell of the first page has been changed based on the first read level to verify a threshold voltage of each memory cell of the second page based on the second read level, and revising the state of each memory cell of the second page according to a result of the determination.

摘要翻译： 一种在非易失性存储器件中读取数据的方法。 该方法包括使用第一读取级别读取存储单元阵列中的第一页的多个存储单元，使用第二读取级别读取与第一页的存储单元相邻的第二页的多个存储单元，确定 基于第一读取电平来改变第一页面的每个存储器单元的状态，以基于第二读取电平来验证第二页的每个存储单元的阈值电压，并且修改第二页的每个存储器单元的状态 第二页根据确定的结果。