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    Projection exposure system
    5.
    发明授权
    Projection exposure system 有权
    投影曝光系统

    公开(公告)号：US06806942B2

    公开(公告)日：2004-10-19

    申请号：US10434952

    申请日：2003-05-08

    申请人： Karl-Heinz Schuster ,  Wilhelm Ulrich ,  Toralf Gruner ,  Daniel Kraehmer ,  Wolfgang Singer ,  Alexander Epple ,  Helmut Beierl ,  Reiner Garreis

    发明人： Karl-Heinz Schuster ,  Wilhelm Ulrich ,  Toralf Gruner ,  Daniel Kraehmer ,  Wolfgang Singer ,  Alexander Epple ,  Helmut Beierl ,  Reiner Garreis

    IPC分类号： G03B2754

    CPC分类号： G03F7/70241 ,  G02B13/143 ,  G02B13/24

    摘要： A projection exposure system is proposed which is positionable between a first object and a second object for imaging the first object in a region of the second object with light of a wavelength band having a width &dgr;&lgr; about a central working wavelength &lgr;, wherein a relative width &dgr;&lgr;/&lgr; of the wavelength band is larger than 0.002, in particular, larger than 0.005, for example, of the Hg-I-line. The projection exposure system is a so-called three-bulge system comprising three bulges having, as a whole, a positive refractive power and two waists having, as a whole, a negative refractive power. By applying suitable measures, in particular, by suitably selecting the material for the lenses forming the projection exposure system, the long-term stability of the system is increased.

    摘要翻译： 提出了一种投影曝光系统，其可定位在第一物体和第二物体之间，用于在具有围绕中心工作波长λ的宽度偏差的波长带的光的第二物体的区域内成像第一物体，其中相对宽度 波长带的偏差λ/λ大于0.002，特别是大于0.005，例如Hg-I线。 投影曝光系统是所谓的三凸起系统，其包括总体上具有正屈光力的三个凸起，以及整体上具有负屈光力的两个凸起。 通过适当的措施，特别是通过适当选择形成投影曝光系统的透镜的材料，可以提高系统的长期稳定性。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    6.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号：US20120092637A1

    公开(公告)日：2012-04-19

    申请号：US13333350

    申请日：2011-12-21

    申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    IPC分类号： G03B27/54

    CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

    摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    7.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号：US08107054B2

    公开(公告)日：2012-01-31

    申请号：US12210514

    申请日：2008-09-15

    申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    IPC分类号： G03B27/72 ,  G03B27/68 ,  G03B27/42 ,  G03B27/52 ,  G03B27/54 ,  G03B27/32

    CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

    摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    8.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号：US08982325B2

    公开(公告)日：2015-03-17

    申请号：US13333350

    申请日：2011-12-21

    申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

    摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    9.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号：US20090073398A1

    公开(公告)日：2009-03-19

    申请号：US12210514

    申请日：2008-09-15

    申请人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    发明人： Michael Totzeck ,  Aksel Goehnermeier ,  Wolfgang Singer ,  Helmut Beierl ,  Heiko Feldmann ,  Hans-Juergen Mann ,  Jochen Hetzler

    IPC分类号： G03B27/52 ,  G03B27/72

    CPC分类号： G03F7/70308 ,  G03F7/70216 ,  G03F7/70566

    摘要： The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译： 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置，以及通过该方法制造的相关部件，方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位，幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比，在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Projection Exposure System and Projection Exposure Method
    10.
    发明申请
    Projection Exposure System and Projection Exposure Method 有权
    投影曝光系统和投影曝光方法

    公开(公告)号：US20130182234A1

    公开(公告)日：2013-07-18

    申请号：US13786134

    申请日：2013-03-05

    申请人： Paul Graupner ,  Olaf Conradi ,  Christoph Zaczek ,  Wilhelm Ulrich ,  Helmut Beierl ,  Toralf Gruner ,  Volker Graeschus

    发明人： Paul Graupner ,  Olaf Conradi ,  Christoph Zaczek ,  Wilhelm Ulrich ,  Helmut Beierl ,  Toralf Gruner ,  Volker Graeschus

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70191 ,  G03F7/70308

    摘要： A projection exposure system includes an illumination system configured to illuminate a mask with radiation. The projection exposure system also includes a projection objective configured to project an image of a pattern of the mask onto a radiation-sensitive substrate. The projection exposure system further includes an angle-selective filter arrangement arranged at or close to a field surface of the projection objective in a projection beam path optically downstream of the object surface. The angle-selective filter arrangement is effective to filter radiation incident on the filter arrangement according to an angle-selective filter function.

    摘要翻译： 投影曝光系统包括被配置为用辐射照射掩模的照明系统。 投影曝光系统还包括被配置为将掩模的图案的图像投影到辐射敏感基板上的投影物镜。 投影曝光系统还包括在物镜表面光学下游的投影光束路径中布置在投影物镜的场表面处或其附近的角度选择滤光器装置。 角度选择滤波器装置可以根据角度选择滤波器功能对入射到滤波器装置上的辐射进行滤波。