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    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof
    1.
    发明申请
    Hard magnetic film structural body, magnetoresistance effect device thereof, magnetic head, magnetic recording/reproducing head thereof, and magnetic record medium thereof, and magnetic storing apparatus thereof 有权
    硬磁膜结构体，磁电阻效应器件，磁头，磁记录/再现头及其磁记录介质及其磁存储装置

    公开(公告)号：US20060198063A1

    公开(公告)日：2006-09-07

    申请号：US11417195

    申请日：2006-05-04

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/127 ,  G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains
    2.
    发明授权
    Magnetoresistance effect device having a bi-crystal structure composed of main grains each having a plurality of sub-grains 有权
    具有由具有多个亚晶粒的主晶粒组成的双晶结构的磁阻效应器件

    公开(公告)号：US07336454B2

    公开(公告)日：2008-02-26

    申请号：US11417195

    申请日：2006-05-04

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magnetoresistance effect device having hard magnetic film structural body
    3.
    发明授权
    Magnetoresistance effect device having hard magnetic film structural body 失效
    具有硬磁性膜结构体的磁阻效应器件

    公开(公告)号：US07116527B1

    公开(公告)日：2006-10-03

    申请号：US08940020

    申请日：1997-09-29

    申请人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    发明人： Hideaki Fukuzawa ,  Shin-ichi Nakamura ,  Yuzo Kamiguchi ,  Hitoshi Iwasaki ,  Akio Hori ,  Susumu Hashimoto

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3932 ,  B82Y25/00 ,  H01F10/132 ,  H01F10/16 ,  H01F10/3281 ,  H01L43/08

    摘要： A base film of a hard magnetic film containing Co as a structural element has a crystal metal base film such as a Cr film formed on the main surface of a substrate and a reactive base film (mixing layer) formed between the substrate and the crystal metal base film and having a reactive amorphous layer containing a structural element of the substrate and a structural element of the crystal metal base film. A hard magnetic film containing Co as a structural element is formed on the crystal metal base film. With the crystal metal base film such as the Cr film formed on an amorphous layer, a hard magnetic film with a bi-crystal structure can be obtained with high reproducibility. With the hard magnetic film, magnetic characteristics such as coercive force Hc, residual magnetization Mr, saturated magnetization Ms, and square ratio S can be improved without need to use a thick base film. The hard magnetic film containing Co as a structural element is applied to a bias magnetic field applying film of a magnetoresistance effect device and a record layer of a magnetic record medium.

    摘要翻译： 含有Co作为结构元件的硬磁性膜的基膜具有形成在基板的主表面上的Cr膜等晶体金属基膜和在基板和结晶金属之间形成的反应性基膜（混合层） 并且具有包含基板的结构元件的反应性非晶层和晶体金属基膜的结构元件。 在晶体金属基膜上形成含有Co作为结构元素的硬磁性膜。 利用在非晶层上形成的Cr膜等晶体金属基膜，可以以高再现性获得具有双晶结构的硬磁性膜。 对于硬磁性膜，可以提高矫顽力Hc，剩余磁化强度Mr，饱和磁化强度Ms和平方比S等磁特性，而无需使用厚基膜。 含有Co作为结构元件的硬磁性膜被施加到磁阻效应装置的偏磁场施加膜和磁记录介质的记录层。

    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
    4.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
    磁阻效应元件，磁头，磁头组件，磁存储系统

    公开(公告)号：US07738220B1

    公开(公告)日：2010-06-15

    申请号：US11779034

    申请日：2007-07-17

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

    摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。