利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

57 条记录 (耗时 0.036 秒)

    Apparatus for and method of preparing pattern data of electronic part
    3.
    发明授权
    Apparatus for and method of preparing pattern data of electronic part 失效
    电子部件图案数据的制作方法及方法

    公开(公告)号：US06675368B2

    公开(公告)日：2004-01-06

    申请号：US09962454

    申请日：2001-09-26

    申请人： Mariko Takayanagi ,  Shunko Magoshi ,  Tatsuya Ohguro

    发明人： Mariko Takayanagi ,  Shunko Magoshi ,  Tatsuya Ohguro

    IPC分类号： G06F1750

    CPC分类号： H01J37/3026 ,  H01J2237/31764 ,  Y10T428/24802

    摘要： A method divides a layout area of an electronic part into sections, designs patterns according to circuit data of de electronic part, and draws the patterns in the layout area section by section so that the patterns in the sections may collectively form the electronic part. The method detects, among the patterns, any violation pattern that may cause a characteristic failure in the electronic part due to a section-to section connection error. Such violation pattern has a size L smaller than a threshold “k*La” where La is a section-to-section connection allowance and k is a coefficient. Also provided is an apparatus for executing the method.

    摘要翻译： 一种方法将电子部件的布局区域划分为部分，根据电子部件的电路数据设计图案，并逐段绘制布局区域中的图案，使得部分中的图案可以共同形成电子部件。 该方法在模式之中检测到可能由于段到段连接错误而导致电子部件中的特征故障的任何违规模式。 这种违反模式的尺寸L小于阈值“k * La”，其中La是截面连接容限，k是系数。 还提供了一种用于执行该方法的装置。

    SOLID-STATE IMAGING DEVICE
    5.
    发明申请
    SOLID-STATE IMAGING DEVICE 审中-公开
    固态成像装置

    公开(公告)号：US20110298023A1

    公开(公告)日：2011-12-08

    申请号：US13154579

    申请日：2011-06-07

    申请人： Tatsuya Ohguro

    发明人： Tatsuya Ohguro

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14645 ,  H01L27/14621 ,  H01L27/1464

    摘要： According to the embodiments, a solid-state imaging device is provided, which includes a first electrode film, a first photoelectric conversion film, a first conductive film, a dielectric film, a second photoelectric conversion film, and a second conductive film. The first photoelectric conversion film covers the surface and the side of the first electrode film. The first conductive film covers the light receiving surface and the side of the first photoelectric conversion film. The dielectric film covers a portion corresponding to the side of the first photoelectric conversion film in the first conductive film. The second photoelectric conversion film covers a main portion of a portion corresponding to the light receiving surface of the first photoelectric conversion film in the first conductive film. The second conductive film covers the light receiving surface and the side of the second photoelectric conversion film.

    摘要翻译： 根据实施例，提供了一种固态成像装置，其包括第一电极膜，第一光电转换膜，第一导电膜，电介质膜，第二光电转换膜和第二导电膜。 第一光电转换膜覆盖第一电极膜的表面和侧面。 第一导电膜覆盖光接收表面和第一光电转换膜的侧面。 电介质膜覆盖与第一导电膜中的第一光电转换膜侧相对应的部分。 第二光电转换膜覆盖与第一导电膜中的第一光电转换膜的光接收表面相对应的部分的主要部分。 第二导电膜覆盖光接收表面和第二光电转换膜的一侧。

    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device
    7.
    发明授权
    Variable-capacitance element, variable-capacitance device, and portable phone including variable-capacitance device 有权
    可变电容元件，可变电容器件以及包括可变电容器件的便携式电话

    公开(公告)号：US07177134B2

    公开(公告)日：2007-02-13

    申请号：US11137794

    申请日：2005-05-26

    申请人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    发明人： Tamio Ikehashi ,  Tatsuya Ohguro ,  Mie Matsuo

    IPC分类号： H01G5/01 ,  H01G4/005

    CPC分类号： H01G5/16 ,  H01G5/18

    摘要： A variable-capacitance element includes: a first electrode and a second electrode which are fixed on a substrate with a spacing; a movable electrode; an actuator which is supported on a supporting portion provided on the substrate to drive the movable electrode. The movable electrode is put in an electrically connecting state with the second electrode, when the movable electrode is driven to a first position by the actuator, and the movable electrode is put in an electrically non-connected state with the second electrode, when the movable electrode is driven to a second position by the actuator. The movable electrode is constituted to be always put in an electrically non-connected state with the first electrode.

    摘要翻译： 可变电容元件包括：以间隔固定在基板上的第一电极和第二电极; 可动电极; 支撑在设置在基板上的支撑部上以驱动可动电极的致动器。 当可动电极通过致动器驱动到第一位置时，可动电极与第二电极处于电连接状态，并且可移动电极与第二电极处于与电不连接的状态，当可移动电极 电极被致动器驱动到第二位置。 可动电极构成为与第一电极总是处于非连接状态。

    MOSFET with a thin gate insulating film
    9.
    发明申请
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US20050224898A1

    公开(公告)日：2005-10-13

    申请号：US11143594

    申请日：2005-06-03

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed an the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined a be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成所述基板的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅电极（2）和漏区（6）的电压为1.5V以下。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。