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1.发明授权GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权GaN单晶质量及其制造方法，半导体器件及其制造方法公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译： 提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成 衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。
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公开(公告)号：US20110156213A1
公开(公告)日：2011-06-30
申请号：US13061307
申请日：2009-08-26
申请人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。
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3.发明申请AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL COMPONENT 审中-公开Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学元件的方法公开(公告)号：US20110104438A1
公开(公告)日：2011-05-05
申请号：US13001749
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B13/143 , Y10T428/24355 , Y10T428/2973
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译： 制造Al x Ga（1-x）N（0
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4.发明授权AlxGa(1-x)N single crystal, method of producing AlxGa(1-x)N single crystal, and optical lens 失效Al x Ga（1-x）N单晶，Al x Ga（1-x）N单晶的制造方法，光学透镜公开(公告)号：US08363326B2
公开(公告)日：2013-01-29
申请号：US13001723
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
IPC分类号： G02B1/02
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译： 制造本发明的Al x Ga（1-x）N（0
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5.发明申请AlxGa(1-x)N SINGLE CRYSTAL, METHOD OF PRODUCING AlxGa(1-x)N SINGLE CRYSTAL, AND OPTICAL LENS 失效Al x Ga（1-x）N单晶，生产Al x Ga（1-x）N单晶和光学透镜的方法公开(公告)号：US20110109973A1
公开(公告)日：2011-05-12
申请号：US13001723
申请日：2009-06-25
申请人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
发明人： Satoshi Arakawa , Takashi Sakurada , Yoshiyuki Yamamoto , Issei Satoh , Keisuke Tanizaki , Hideaki Nakahata , Naho Mizuhara , Michimasa Miyanaga
CPC分类号： G02B1/02 , C30B23/025 , C30B29/403 , C30B29/406 , G02B3/00 , G02B13/143 , Y10T428/21 , Y10T428/24355
摘要： A method of producing an AlxGa(1-x)N (0
摘要翻译： 制造本发明的Al x Ga（1-x）N（0
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6.发明申请METHOD FOR PRODUCING GROUP III-NITRIDE CRYSTAL AND GROUP III-NITRIDE CRYSTAL 审中-公开生产III族氮化物晶体和III族氮化物晶体的方法公开(公告)号：US20110110840A1
公开(公告)日：2011-05-12
申请号：US13054373
申请日：2009-06-26
申请人： Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
发明人： Michimasa Miyanaga , Naho Mizuhara , Keisuke Tanizaki , Issei Satoh , Hideaki Nakahata , Satoshi Arakawa , Yoshiyuki Yamamoto , Takashi Sakurada
CPC分类号： C30B29/403 , C30B23/025 , C30B25/18
摘要： A method for producing a group III-nitride crystal having a large thickness and high quality and a group III-nitride crystal are provided. A method for producing a group III-nitride crystal 13 includes the following steps: A underlying substrate 11 having a major surface 11a tilted toward the direction with respect to the (0001) plane is prepared. The group III-nitride crystal 13 is grown by vapor-phase epitaxy on the major surface 11a of the underlying substrate 11. The major surface 11a of the underlying substrate 11 is preferably a plane tilted at an angle of −5° to 5° from the {01-10} plane.
摘要翻译： 提供了具有大厚度和高质量的III族氮化物晶体和III族氮化物晶体的制造方法。 制备III族氮化物晶体13的方法包括以下步骤：制备具有相对于（0001）面朝向<1-100>方向倾斜的主表面11a的下面的基底11。 III族氮化物晶体13通过在下面的基底11的主表面11a上的气相外延生长。下面的基底11的主表面11a优选是以-5°至5°的角度倾斜的平面 {01-10}飞机。
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公开(公告)号：US08829658B2
公开(公告)日：2014-09-09
申请号：US13061307
申请日：2009-08-26
申请人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Satoshi Arakawa , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
CPC分类号： H01L21/02021 , C30B25/00 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/02013 , H01L21/02389
摘要： A method of manufacturing a nitride substrate includes the following steps. Firstly, a nitride crystal is grown. Then, the nitride substrate including a front surface is cut from the nitride crystal. In the step of cutting, the nitride substrate is cut such that an off angle formed between an axis orthogonal to the front surface and an m-axis or an a-axis is greater than zero. When the nitride crystal is grown in a c-axis direction, in the step of cutting, the nitride substrate is cut from the nitride crystal along a flat plane which passes through a front surface and a rear surface of the nitride crystal and does not pass through a line segment connecting a center of a radius of curvature of the front surface with a center of a radius of curvature of the rear surface of the nitride crystal.
摘要翻译： 制造氮化物衬底的方法包括以下步骤。 首先，生长氮化物晶体。 然后，从氮化物晶体切割包括前表面的氮化物衬底。 在切割步骤中，切割氮化物衬底，使得在与正面正交的轴与m轴或a轴之间形成的偏角大于零。 当氮化物晶体沿c轴方向生长时，在切割步骤中，沿着通过氮化物晶体的前表面和后表面的平坦平面从氮化物晶体切割氮化物衬底，并且不通过 通过将前表面的曲率半径的中心与氮化物晶体的后表面的曲率半径的中心连接的线段。
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8.发明授权公开(公告)号：US08367577B2
公开(公告)日：2013-02-05
申请号：US12602104
申请日：2009-02-18
申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
IPC分类号： C04B35/581
CPC分类号： C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
摘要： Flat, thin AlN membranes and methods of their manufacture are made available. An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber a sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要翻译： 扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％ ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。 在基材（1）上，AlN薄膜（2）可利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体， ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。
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9.发明申请公开(公告)号：US20100209622A1
公开(公告)日：2010-08-19
申请号：US12602104
申请日：2009-02-18
申请人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
发明人： Issei Satoh , Naho Mizuhara , Keisuke Tanizaki , Michimasa Miyanaga , Takashi Sakurada , Yoshiyuki Yamamoto , Hideaki Nakahata
CPC分类号： C30B29/403 , C23C14/0641 , C23C14/28 , C30B23/02
摘要： Flat, thin AlN membranes and methods of their manufacture are made available.An AlN thin film (2) contains between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms. Onto a base material (1), the AlN thin film (2) is formable utilizing a plasma generated by setting inside a vacuum chamber an sintered AlN ceramic containing between 0.001 wt. % and 10 wt. % additive atomic element of one or more type selected from Group-III atoms, Group-IV atoms and Group-V atoms, and with the base material having been set within the vacuum chamber, irradiating the sintered AlN ceramic with a laser.
摘要翻译： 扁平，薄的AlN膜及其制造方法可用。 AlN薄膜（2）含有0.001重量％ ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素。 在基材（1）上，AlN薄膜（2）可以利用通过在真空室内设置包含0.001重量％的烧结AlN陶瓷而产生的等离子体， ％和10wt。 选自III族原子，IV族原子和V族原子的一种或多种类型的添加剂原子元素，并将基材设置在真空室内，用激光照射烧结的AlN陶瓷。
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公开(公告)号：US07995267B2
公开(公告)日：2011-08-09
申请号：US12510267
申请日：2009-07-28
IPC分类号： G02F1/35
CPC分类号： G02F1/3558 , G02F1/353 , G02F2001/3548
摘要： Affords a wavelength converter manufacturing method and a wavelength converter whereby the transmissivity can be improved. A method of manufacturing a wavelength converter (10a) is provided with the following steps. At first, crystal is grown. Then a first crystal (11) and a second crystal (12) are formed by sectioning the crystal into two or more in such a way that the domains are the reverse of each other. The first and second crystals (11) and (12) are then interlocked in such a way that a domain inversion structure in which the polar directions of the first and second crystals (11) and (12) periodically reverse along an optical waveguide (13) is formed, and the domain inversion structure satisfies quasi-phase-matching conditions for an incoming beam (101).
摘要翻译： 提供一种波长转换器制造方法和波长转换器，由此能够提高透射率。 制造波长转换器（10a）的方法具有以下步骤。 起初，晶体生长。 然后通过将晶体分成两个或更多个使得畴相反的方式形成第一晶体（11）和第二晶体（12）。 然后将第一和第二晶体（11）和（12）互锁，使得第一和第二晶体（11）和（12）的极性方向沿着光波导（13）周期性地反转的畴反转结构 ），域反转结构满足入射光束（101）的准相位匹配条件。
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