公开(公告)号：US4232219A

公开(公告)日：1980-11-04

申请号：US15615

申请日：1979-02-27

申请人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

发明人： Hideaki Yamamoto ,  Toshihisa Tsukada ,  Eiichi Maruyama ,  Hiroya Inagaki

IPC分类号： H04N1/028 ,  G03F3/08 ,  H04N1/04 ,  H04N1/46 ,  H04N1/48 ,  G02B5/14

CPC分类号： H04N1/486

摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.

摘要翻译： 一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。 具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。 感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。

公开(公告)号：US4323912A

公开(公告)日：1982-04-06

申请号：US152690

申请日：1980-05-23

申请人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

发明人： Norio Koike ,  Toshihisa Tsukada ,  Haruhisa Ando ,  Hideaki Yamamoto ,  Tadaaki Hirai ,  Masaharu Kubo ,  Eiichi Maruyama ,  Toru Baji ,  Yukio Takasaki ,  Shusaku Nagahara

IPC分类号： H01L27/146 ,  H04N5/335 ,  H04N5/341 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14665

摘要： In a solid-state imaging device having a semiconductor integrated circuit in which a plurality of switching elements for addressing positions of picture elements and scanning circuitry for turning the switching elements "on" and "off" in time sequence are disposed on an identical substrate, a photoconductive film which is disposed on the integrated circuit and which is connected with the respective switching elements, and a light transmitting electrode which is disposed on the photoconductive film, a voltage being applied to the light transmitting electrode thereby to bias a region of the photoconductive film on a light entrance side either positively or negatively with respect to a region thereof on the opposite side; a solid-state imaging device characterized in that said each switching element is an element which uses carriers of a polarity opposite to that of carriers having a greater mobility in said photoconductive film.

摘要翻译： 在具有半导体集成电路的固态成像装置中，其中用于寻址用于寻址位置的多个开关元件和用于将开关元件“开”和“关”的扫描电路按时间顺序设置在相同的基板上， 设置在集成电路上并与各个开关元件连接的光电导膜和设置在光电导膜上的透光电极，施加到光透射电极的电压，从而偏压光电导区域 相对于其相对侧的区域，光入射侧的膜是正或负的; 一种固态成像装置，其特征在于，所述每个开关元件是使用与所述光电导膜中迁移率较高的载流子极性相反的载流子的元件。

公开(公告)号：US4227078A

公开(公告)日：1980-10-07

申请号：US918273

申请日：1978-06-22

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Makoto Matsui ,  Toshihisa Tsukada ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Makoto Matsui ,  Toshihisa Tsukada ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： H04N1/028 ,  G02B6/42 ,  G06K9/20 ,  H01L27/144 ,  H01L27/146 ,  H01L31/02 ,  H01L31/0232 ,  H04N1/031 ,  G02B5/14

CPC分类号： H04N1/0312 ,  G02B6/421 ,  G02B6/4249 ,  G06K9/2009 ,  H01L27/1446 ,  H04N1/0311 ,  H04N1/0315

摘要： A photo-sensor wherein a bundle of optical fibers in the form of a sheet is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate, an array of photosensitive elements is disposed integrally with the substrate in such a manner that at least one transparent insulating layer intervenes between the photoelectric elements and the optical fiber bundle on, at least, an end face of the optical fiber bundle on the first surface side of the substrate, and an end face of the optical fiber bundle open to the second surface of the substrate serves as an information reading face.

摘要翻译： 一种光传感器，其中将片状形式的一束光纤设置在预定的基板内，光纤束从基板的第一表面延伸到第二表面，光敏元件阵列与 基板，使得至少一个透明绝缘层介于光电元件和光纤束之间，至少在基板的第一表面侧上的光纤束的端面和 向基板的第二表面开放的光纤束用作信息读取面。

公开(公告)号：US4394749A

公开(公告)日：1983-07-19

申请号：US154999

申请日：1980-05-30

申请人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

发明人： Toshihisa Tsukada ,  Yukio Takasaki ,  Tadaaki Hirai ,  Toru Baji ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Eiichi Maruyama ,  Sachio Ishioka

IPC分类号： H01L27/146 ,  G11C13/00

CPC分类号： H01L27/14665

摘要： A photoelectric device having at least a predetermined impurity region which is disposed in a semiconductor substrate, and a photoelectric conversion portion which is constructed by stacking an electrode layer lying in contact with at least a part of the impurity region, a photoconductive material layer overlying the electrode layer, and a transparent electrode overlying the photoconductive material layer, characterized in that the photoconductive material layer is made of an amorphous chalcogenide material which principally contains Se, is disclosed. It is very favorable that the photoelectric conversion material layer made of the amorphous material principally containing Se is partially doped with Te so as to enhance its sensitivity. The amorphous chalcogenide material is very useful in the following point. In the course of forming, or after having formed, at least one photoconductive layer on a semiconductor body whose surface is uneven, a heat treatment is performed at a temperature of at least the softening point of the photoconductor so as to flatten the layer, whereby discontinuous parts of the photoconductor ascribable to the uneven surface of the semiconductor body can be avoided.

摘要翻译： 具有至少设置在半导体衬底中的预定杂质区域的光电器件和通过堆叠与至少一部分杂质区域接触的电极层构成的光电转换部分，覆盖 电极层和覆盖光导材料层的透明电极，其特征在于，所述光导材料层由主要包含Se的无定形硫族化物材料制成。 非常有利的是，由主要含有Se的非晶体材料制成的光电转换材料层部分地掺杂有Te以提高其灵敏度。 无定形硫族化物材料在以下方面非常有用。 在形成表面不均匀的半导体本体上形成或形成至少一个光电导层的过程中，至少在光电导体的软化点的温度下进行热处理以使层平坦化，由此 可以避免归因于半导体本体的不平坦表面的感光体的不连续部分。

公开(公告)号：US4233506A

公开(公告)日：1980-11-11

申请号：US903161

申请日：1978-05-05

申请人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

发明人： Hideaki Yamamoto ,  Makoto Matsui ,  Toshihisa Tsukada ,  Yoshizumi Eto ,  Tadaaki Hirai ,  Eiichi Maruyama

IPC分类号： G02B6/42 ,  G02B27/00 ,  G02B27/02 ,  G06K9/20 ,  H01L27/144 ,  H04N1/028 ,  H04N1/031 ,  G02B5/14

CPC分类号： H04N1/0312 ,  G02B6/421 ,  G02B6/4249 ,  G06K9/2009 ,  H01L27/1446 ,  H04N1/0311 ,  H04N1/0315

摘要： A pboto-sensor wherein a bundle of optical fibers is disposed within a predetermined substrate, the optical fiber bundle extending from a first surface to a second surface of the substrate and being formed to be flat, an array of photosensitive elements which have photosensitive parts on an open end face of the optical fibers at the first surface of the substrate is disposed integrally with the substrate, and an end face of the optical fibers at the second surface of the substrate serves as an information reading surface.

摘要翻译： 一种光束传感器，其中一束光纤被布置在预定的衬底内，光纤束从衬底的第一表面延伸到第二表面并且被形成为平坦的，具有光敏部件的光敏元件阵列 在基板的第一表面处的光纤的开口端面与基板一体地设置，并且在基板的第二表面处的光纤的端面用作信息读取表面。

公开(公告)号：US5672523A

公开(公告)日：1997-09-30

申请号：US451209

申请日：1995-05-26

申请人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

发明人： Hideaki Yamamoto ,  Haruo Matsumaru ,  Yasuo Tanaka ,  Ken Tsutsui ,  Toshihisa Tsukada ,  Kazuo Shirahashi ,  Akira Sasano ,  Yuka Matsukawa

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  G09G3/36 ,  H01L21/3205 ,  H01L21/336 ,  H01L27/12 ,  H01L29/49 ,  H01L29/78 ,  H01L29/786 ,  H01L21/84

CPC分类号： G02F1/136286 ,  G02F1/1345 ,  G02F1/136213 ,  H01L29/4908 ,  H01L2924/0002

摘要： The present invention concerns an active-matrix addressed TFT substrate using a thin film transistor, a manufacturing method and an anodic oxidation method thereof, a liquid crystal display panel using the TFT substrate and a liquid crystal display equipment using the liquid crystal display panel. Cr or Ta is used for gate terminals; aluminum or a metal composed mainly of aluminum is used for gate bus-lines extended therefrom, gate electrodes and thin film capacitances (additional capacitance, storage capacitance); and an anodic oxidized film composed of the metal and free from defect is used for at least one of gate insulators, dielectric films of the thin film capacitances and interlayer insulation films for the intersections between the bus-lines. In forming a selective oxidation mask to a desired region on the aluminum pattern with a positive type photoresist, for the anodic oxidation, an angle (.theta.) formed between the selective oxidation mask and the aluminum pattern is made as: .beta..gtoreq.110-20T(T: film thickness of the positive type photoresist). The photoresist is subjected to a heat treatment prior to and after exposure, preferably the after-treatment being performed before developing. The anodic oxidation film is heat-treated after formation, to reduce the leak current.

摘要翻译： 本发明涉及使用薄膜晶体管的有源矩阵寻址TFT基板，其制造方法和阳极氧化方法，使用该TFT基板的液晶显示面板和使用该液晶显示面板的液晶显示装置。 Cr或Ta用于栅极端子; 铝或主要由铝组成的金属用于从其延伸的栅极总线，栅电极和薄膜电容（附加电容，存储电容）; 并且由金属构成并且没有缺陷的阳极氧化膜用于栅极绝缘体，薄膜电容的介电膜和用于总线之间的交叉点的层间绝缘膜中的至少一种。 在用正型光致抗蚀剂形成选择性氧化掩模到铝图案上的所需区域时，为了阳极氧化，在选择性氧化掩模和铝图案之间形成的角度（θ）被制成： 20T（T：正型光致抗蚀剂的膜厚）。 在曝光之前和之后对光致抗蚀剂进行热处理，优选在显影之前进行后处理。 阳极氧化膜在形成后进行热处理，以减少漏电流。

公开(公告)号：US5032531A

公开(公告)日：1991-07-16

申请号：US376866

申请日：1989-07-07

申请人： Ken Tsutsui ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Haruo Matsumaru

发明人： Ken Tsutsui ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuo Tanaka ,  Haruo Matsumaru

IPC分类号： G02F1/136 ,  G02F1/1343 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： G02F1/1368 ,  H01L27/1214 ,  H01L29/66765 ,  G02F1/136213

摘要： In a first manufacturing step of an active matrix liquid-crystal panel, a transparent conductor film and a metal film are sequentially accumulated on a substrate in this order so as to form a two-layer film. The two-layer film including the transparent conductor film and the metal film is subjected to photoetching to simultaneously form at least a pixel electrode (transparent conductor film) and a gate electrode (metal film) of a thin-film transistor according to a predetermined pattern. In a fabrication process near the end of the fabrication, when the source and drain electrodes of the thin-film transistors are formed, the metal film on the pixel electrode is simultaneously removed. Since the removal of the metal film protecting the pixel electrode is simultaneously achieved at a point near the final process, protection of the pixel electrode is guaranteed, thereby realizing improvement of the yielding and reduction of the production process.

摘要翻译： 在有源矩阵液晶面板的第一制造工序中，依次将透明导体膜和金属膜累积在基板上，形成双层膜。 对包含透明导体膜和金属膜的两层膜进行光刻，以至少形成根据预定图案的薄膜晶体管的像素电极（透明导体膜）和栅电极（金属膜） 。 在接近制造结束的制造工艺中，当形成薄膜晶体管的源极和漏极时，同时去除像素电极上的金属膜。 由于保护像素电极的金属膜的去除同时在最终工艺附近实现，因此保护像素电极的保护，从而实现生产过程的屈服和减少的改善。

公开(公告)号：US4495409A

公开(公告)日：1985-01-22

申请号：US348669

申请日：1982-02-16

申请人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

发明人： Toru Baji ,  Naohiko Koizumi ,  Toshihisa Tsukada ,  Hideaki Yamamoto ,  Yasuharu Shimomoto ,  Yasuo Tanaka

IPC分类号： H01L27/146 ,  H04N1/031 ,  H04N1/193 ,  H01J40/14

CPC分类号： H04N1/031 ,  H01L27/14643 ,  H01L27/14665 ,  H04N1/1931

摘要： A photosensor comprising an array of a plurality of unit picture elements each of which is constituted by a serial connection of a photoconductor film and a diode or a combination of a photodiode and a diode connected in series to the photodiode in the opposite rectifying direction, wherein the plurality of unit picture elements being divided into at least two groups, the unit picture elements belonging to the respective groups being connected to corresponding first group of wiring conductors provided in association with the groups, respectively, while the unit picture elements belonging to the different groups and located at same positions in the different groups relative to one another are connected together to respective second group of wiring conductors, including a first biasing controller for applying a voltage to the first group of wiring conductor connected to the picture element from which a signal is to be read out, the voltage serving for biasing forward the diode of the picture element to be read out, while no forward bias voltage is applied to the first group of wiring conductors connected to the unit picture elements from which signals are not to be read out; and a second biasing controller provided for one of the second group of wiring conductor connected to the unit picture element to be read out for grounding or biasing forward the diode of the picture element to be read out through a capacitance, whereby electric charges stored at nodes located between the photoconductor films and the diodes or between the photodiodes and the diodes, respectively, are sequentially read out as signals.

摘要翻译： 一种光电传感器，包括多个单元图像的阵列，每个单元图像元素由感光体膜和二极管的串联连接构成，或者在相反的整流方向上与光电二极管串联连接的二极管的组合，其中 多个单位图像元素被划分为至少两组，属于各组的单位图像元素分别连接到与组相关联地设置的相应的第一组布线导体，而属于不同组的单位图像元素 并且相对于彼此位于不同组中的相同位置处连接到相应的第二组布线导体，包括用于向连接到图像元件的第一组布线导体施加电压的第一偏置控制器， 要读出，用于偏压图像的二极管的电压 同时没有正向偏置电压施加到连接到不读出信号的单元图像的第一组布线导体; 以及第二偏置控制器，被设置为连接到要读出的单元像素的第二组布线导体中的一个，用于通过电容接地或偏置要读出的像素的二极管，从而存储在节点 分别位于光电导体膜和二极管之间或者位于光电二极管和二极管之间的光信号作为信号被依次读出。

公开(公告)号：US4429325A

公开(公告)日：1984-01-31

申请号：US206780

申请日：1980-11-14

申请人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

发明人： Yukio Takasaki ,  Tadaaki Hirai ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Yoshiaki Mori

IPC分类号： H01L27/146 ,  H01L31/0264 ,  H04N5/335 ,  H04N5/359 ,  H04N5/361 ,  H04N5/369 ,  H04N5/374 ,  H01L27/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14665

摘要： In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.

摘要翻译： 在具有金属电极的光电传感器中，覆盖在金属电极上的至少一个光电转换层和覆盖在光电转换层上的透明或部分透明导电层，在金属电极与金属电极之间配置复合层， 光电转换层。 通过配置复合层，其表面上具有绝缘氧化膜的金属电极可以像不存在绝缘氧化膜那样被处理。 暗电流被抑制，光响应良好。 作为复合层的材料，通常是Sb2S3，As2Se3，As2S3，Sb2Se3等。

公开(公告)号：US4364973A

公开(公告)日：1982-12-21

申请号：US247737

申请日：1981-03-26

申请人： Norio Koike ,  Toru Baji ,  Toshihisa Tsukada ,  Hideaki Yamamoto

发明人： Norio Koike ,  Toru Baji ,  Toshihisa Tsukada ,  Hideaki Yamamoto

IPC分类号： H01L27/14 ,  H01L27/146 ,  H01L31/18 ,  H04N5/335 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  B05D1/32

CPC分类号： H01L27/14665

摘要： A method for fabricating a solid-state imaging device using photoconductive film, comprising the step of depositing a photoconductive material onto a scanner IC by the use of a shield plate, the scanner IC including vertical switching MOS transistors and horizontal switching MOS transistors arrayed in the form of a matrix and vertical and horizontal scanning shift registers for scanning the vertical and horizontal switching MOS transistors respectively, the shield plate having an open part corresponding to a vertical switching MOS transistor array area.

摘要翻译： 一种使用光电导膜制造固态成像装置的方法，包括通过使用屏蔽板将光电导材料沉积到扫描仪IC上的步骤，所述扫描器IC包括垂直开关MOS晶体管和排列在 形式的矩阵和用于扫描垂直和水平切换MOS晶体管的垂直和水平扫描移位寄存器，所述屏蔽板具有对应于垂直开关MOS晶体管阵列区域的开路部分。