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公开(公告)号：US08958138B2
公开(公告)日：2015-02-17
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu Nitta , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译： 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在所述至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。
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公开(公告)号：US20120307334A1
公开(公告)日：2012-12-06
申请号：US13483095
申请日：2012-05-30
申请人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
发明人： Hidekazu NITTA , Makoto Ohkura , Takuo Kaitoh , Katsumi Matsumoto
CPC分类号： G02B26/085 , B81B3/0072 , B81B2201/045 , B81C2201/0167
摘要： In a movable shutter-system display device, a movable shutter includes an amorphous silicon film material which has a low residual stress and thus is stable. A display device includes a display panel comprising a first substrate and a second substrate. The display panel includes a plurality of pixels; each of the plurality of pixels includes a movable shutter including amorphous silicon and a driving circuit for driving the movable shutter; and the amorphous silicon included in the movable shutter is formed of at least two amorphous silicon films, and where any two amorphous silicon films adjacent to each other among the at least two amorphous silicon films are a first amorphous silicon film and a second amorphous silicon film stacked on the first amorphous silicon film, the first amorphous silicon film and the second amorphous silicon film have different characteristic values.
摘要翻译： 在可移动快门系统显示装置中，可移动遮板包括具有低残余应力并因此是稳定的非晶硅膜材料。 显示装置包括：显示面板，包括第一基板和第二基板。 显示面板包括多个像素; 所述多个像素中的每一个包括可移动快门，其包括非晶硅和用于驱动所述活动快门的驱动电路; 并且包括在可移动快门中的非晶硅由至少两个非晶硅膜形成，并且其中在至少两个非晶硅膜中彼此相邻的两个非晶硅膜是第一非晶硅膜和第二非晶硅膜 堆叠在第一非晶硅膜上，第一非晶硅膜和第二非晶硅膜具有不同的特性值。
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公开(公告)号：US20120287494A1
公开(公告)日：2012-11-15
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US09128286B2
公开(公告)日：2015-09-08
申请号：US13429470
申请日：2012-03-26
CPC分类号： G02B26/02 , G02B26/0841 , G09G3/3433 , G09G2300/08
摘要： A metal layer is formed on a highly light-transmissive substrate; a resist mask having an opening pattern is formed on the metal layer; exposed portions of the metal layer is etched away in this state to form openings; then the resist mask is removed; and a surface of the metal layer and an inner side wall of each of the openings are oxidized to form a metal oxide layer. Thus, a front surface and a rear surface of the aperture plate are caused to have different reflectances. The oxide layer is formed at the same time as when the resist mask is ashed to remove resist.
摘要翻译： 金属层形成在高透光性基板上; 在金属层上形成具有开口图案的抗蚀剂掩模; 在该状态下，金属层的暴露部分被蚀刻掉以形成开口; 然后去除抗蚀剂掩模; 并且金属层的表面和每个开口的内侧壁被氧化以形成金属氧化物层。 因此，使孔板的前表面和后表面具有不同的反射率。 在抗蚀剂掩模被灰化以除去抗蚀剂的同时形成氧化物层。
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公开(公告)号：US08222645B2
公开(公告)日：2012-07-17
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
IPC分类号： H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译： 提供了具有优异的光电转换效率的光传感器的显示装置。 在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到 半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。
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公开(公告)号：US08456401B2
公开(公告)日：2013-06-04
申请号：US12222339
申请日：2008-08-07
申请人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
发明人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
IPC分类号： G09G3/36 , H01L31/00 , H01L31/036
CPC分类号： H01L29/78618 , G02F1/13454 , G02F2001/13685 , G02F2202/104 , H01L27/12 , H01L29/78645 , H01L29/78696
摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.
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公开(公告)号：US20100230675A1
公开(公告)日：2010-09-16
申请号：US12702975
申请日：2010-02-09
申请人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
发明人： Katsumi Matsumoto , Hideki Nakagawa , Yoshiharu Owaku , Terunori Saitou , Toshio Miyazawa , Takahiro Kamo , Takuo Kaitoh
CPC分类号： G06F3/0412 , G02F1/1362 , G02F2001/13312 , G06F3/042 , H01L27/3227 , H01L27/323 , H01L27/3269
摘要： A display device having a photosensor which exhibits excellent photoelectric conversion efficiency is provided. In a display device which forms photosensors on a substrate thereof, the photosensor is formed by sequentially stacking a gate electrode, a gate insulation film and a semiconductor layer in such an order or in an opposite order from a substrate side, and electrodes are connected to both sides of the semiconductor layer respectively, the semiconductor layer is formed of a stacked body consisting of a crystalline semiconductor layer and an amorphous semiconductor layer, and the crystalline semiconductor layer is arranged on the gate insulation film side.
摘要翻译： 提供了具有优异的光电转换效率的光传感器的显示装置。 在其基板上形成光电传感器的显示装置中，光电传感器通过依次层叠栅电极，栅极绝缘膜和半导体层，从基板侧按顺序或相反的顺序形成，电极连接到 半导体层的两侧分别由由结晶半导体层和非晶半导体层组成的层叠体形成，并且在栅极绝缘膜侧配置结晶半导体层。
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公开(公告)号：US20090073149A1
公开(公告)日：2009-03-19
申请号：US12222339
申请日：2008-08-07
申请人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
发明人： Katsumi Matsumoto , Kozo Yasuda , Yasukazu Kimura , Takuo Kaitoh , Toshihiko Itoga , Hiroshi Kageyama
CPC分类号： H01L29/78618 , G02F1/13454 , G02F2001/13685 , G02F2202/104 , H01L27/12 , H01L29/78645 , H01L29/78696
摘要： The gate electrode is formed above the polycrystalline semiconductor layer through the gate insulating film. The polycrystalline semiconductor layer includes a first region overlapping with the gate electrode in plan view. The first region is sandwiched between the second region and the third region. The second region of the polycrystalline semiconductor layer includes a first impurity diffusion region and two second impurity diffusion regions opposite in conductivity type to the first impurity diffusion region. The first region and the first impurity diffusion region are in contact with each other at a first boundary. The first region and the two second impurity diffusion regions are in contact with each other at second boundaries. The two second impurity diffusion regions sandwiching the first impurity diffusion region are provided along the gate electrode. Thus, a leak current is suppressed.
摘要翻译： 栅电极通过栅极绝缘膜形成在多晶半导体层的上方。 多晶半导体层包括在平面图中与栅电极重叠的第一区域。 第一区域夹在第二区域和第三区域之间。 多晶半导体层的第二区域包括第一杂质扩散区域和与第一杂质扩散区域相反的导电类型的两个第二杂质扩散区域。 第一区域和第一杂质扩散区域在第一边界处彼此接触。 第一区域和第二第二杂质扩散区域在第二边界处彼此接触。 夹着第一杂质扩散区的两个第二杂质扩散区沿着栅电极设置。 因此，泄漏电流被抑制。
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公开(公告)号：US20140124442A1
公开(公告)日：2014-05-08
申请号：US14127997
申请日：2012-07-05
申请人： Taeko Nakamura , Kenji Kowata , Katsumi Matsumoto
发明人： Taeko Nakamura , Kenji Kowata , Katsumi Matsumoto
CPC分类号： C02F1/441 , B01D61/025 , B01D61/04 , B01D65/08 , B01D2311/04 , B01D2311/12 , B01D2321/162 , C02F1/76 , C02F2209/29 , C02F2209/44 , C02F2303/20
摘要： Clogging of membrane by slime adhesion is efficiently prevented and stable treatment can be carried out for a long period of time at a low cost by a small amount of chemicals without the membrane deterioration and trihalomethane formation even if applied to the water having a large number of viable cell counts and having water quality of harsh. The method comprises supplying water to be treated to a membrane separation apparatus 4, adding intermittently to the water to be treated a combined chlorine agent comprising sulfamic compound, and repeating a non-addition feeding period in which water to be treated is supplied for 6-120 hours without addition of combined chlorine agent, and an intermittent addition feeding period in which water to be treated is supplied for 0.5-40 hours under addition of a combined chlorine agent at biofilm exfoliating concentration in an early stage of biofilm formation during the non-addition feeding period, wherein viable cell count (log CFU/mL) of water to be treated is 3 or more, and the concentration of the combined chlorine agent in the water in the intermittent addition feeding period is 0.5-20 mg/L as total chlorine, and additive amount of the combined chlorine agent added in the intermittent addition feeding period is the amount in which R represented by the following Formula [4] is 3 or more. R=(Intermittent addition feeding period (h)×[1000×Intermittent addition concentration (mg-Cl/L)]2.5/(Non-addition feeding period (h)3.0×10log CFU/mL) [4]
摘要翻译： 有效地防止了膜粘连的堵塞，并且通过少量没有膜劣化的化学品以及三卤甲烷的形成，即使施加到具有大量的膜的水中也能以较低的成本长时间地进行稳定的处理 活细胞计数，水质恶劣。 该方法包括将待处理的水供应到膜分离装置4，间歇地加入待处理的水中，包含氨基磺酸盐化合物的混合氯剂，并重复将未处理的水供给6- 在不加入组合氯剂的情况下120小时，以及间歇加料进料期间，其中在非生物膜生物膜形成的早期阶段，在加入生物膜去角质浓度的组合氯剂中加入待处理的水0.5-40小时， 其中待处理水的活细胞计数（log CFU / mL）为3以上，添加进料期间，间歇加料期间的水中混合氯剂的浓度为0.5〜20mg / L， 氯和添加量在间歇加料进料期间加入的混合氯剂的量是下式[4]表示的R为3或者mor e。 R =（间歇加料时间（h）×[1000×间歇加成浓度（mg-Cl / L）] 2.5 /（非加料加料期间（h）3.0×10log CFU / mL）
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公开(公告)号：US08059081B2
公开(公告)日：2011-11-15
申请号：US11682903
申请日：2007-03-07
申请人： Kozo Yasuda , Katsumi Matsumoto , Toshio Miyazawa
发明人： Kozo Yasuda , Katsumi Matsumoto , Toshio Miyazawa
IPC分类号： G09G3/36
CPC分类号： G09G3/3685 , G09G2300/0408 , G09G2310/0289
摘要： In the display device which is used in a miniaturized portable equipment, when a drive circuit is also connected on the same substrate as pixels, an input signal of low voltage has a level thereof shifted even when the threshold value is large or fluctuated. The display device includes pixel electrodes, switching elements which supply video signals to the pixel electrodes, and a drive circuit which supplies the video signals to the switching elements on the same substrate, wherein the drive circuit includes a level shift circuit, the level shift circuit includes a transistor. In a state that the transistor assumes an ON state, when an input signal is inputted to a source terminal and the input signal is at a low voltage level, a drain terminal assumes a low voltage level. Further, even when the input signal is at a high voltage level equal to or lower than a threshold value, the drain terminal outputs a voltage equal to or more than the threshold value as a high level voltage.
摘要翻译： 在小型便携式设备中使用的显示装置中，当驱动电路也与像素连接在同一基板上时，即使阈值大或波动，低电压的输入信号也具有偏移电平。 显示装置包括像素电极，向像素电极提供视频信号的开关元件，以及将视频信号提供给同一基板上的开关元件的驱动电路，其中，驱动电路包括电平移位电路，电平移位电路 包括晶体管。 在晶体管处于导通状态的状态下，当输入信号被输入到源极端子并且输入信号处于低电压电平时，漏极端子呈现低电压电平。 此外，即使当输入信号处于等于或低于阈值的高电压电平时，漏极端子输出等于或大于阈值的电压作为高电平电压。
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