公开(公告)号：US20130001643A1

公开(公告)日：2013-01-03

申请号：US13534057

申请日：2012-06-27

申请人： Hideki YAGI

发明人： Hideki YAGI

IPC分类号： H01L31/102 ,  H01L21/02

CPC分类号： H01L31/105 ,  G02B6/131 ,  G02B6/42 ,  G02B2006/121

摘要： A process to form a photodiode (PD) with the waveguide structure is disclosed. The PD processes thereby reduces a scattering of the parasitic resistance thereof. The process includes steps to form a PD mesa stripe, to bury the PD mesa stripe by the waveguide region, to etch the PD mesa stripe and the waveguide region to form the waveguide mesa stripe. In the etching, the lower contact layer plays a role of the etching stopper.

摘要翻译： 公开了一种形成具有波导结构的光电二极管（PD）的工艺。 因此PD工艺减少了其寄生电阻的散射。 该过程包括形成PD台面条纹，通过波导区域掩埋PD台面条纹以蚀刻PD台面条纹和波导区域以形成波导台面条纹的步骤。 在蚀刻中，下接触层起蚀刻停止的作用。

公开(公告)号：US20120094415A1

公开(公告)日：2012-04-19

申请号：US13267952

申请日：2011-10-07

申请人： Hideki YAGI ,  Hiroyuki Yoshinaga

发明人： Hideki YAGI ,  Hiroyuki Yoshinaga

IPC分类号： H01L33/08

CPC分类号： H01S5/0202 ,  H01S5/0203 ,  H01S5/22 ,  H01S5/2213

摘要： A method for producing a semiconductor optical device includes the steps of forming a semiconductor region including a ridge structure on a substrate; forming an insulating film on the semiconductor region; forming a non-photosensitive resin region on the insulating film, forming a first mask that defines a scribe area; forming the scribe area by etching using the first mask; after removing the first mask, forming an insulating layer by etching the insulating film, forming an electrode on the ridge structure and the non-photosensitive resin region to produce a substrate product; forming a scribe line on a surface of the semiconductor region in the scribe area of the substrate product; and cutting the product along the scribe line to form a semiconductor laser bar.

摘要翻译： 一种制造半导体光学器件的方法包括以下步骤：在衬底上形成包括脊结构的半导体区域; 在半导体区域上形成绝缘膜; 在所述绝缘膜上形成非感光性树脂区域，形成限定划线区域的第一掩模; 通过使用第一掩模的蚀刻形成划线区域; 在去除第一掩模之后，通过蚀刻绝缘膜形成绝缘层，在脊结构和非感光树脂区上形成电极以产生基底产物; 在基板产品的划线区域中的半导体区域的表面上形成划线; 并沿着划线切割产品以形成半导体激光条。

公开(公告)号：US20130012001A1

公开(公告)日：2013-01-10

申请号：US13530154

申请日：2012-06-22

申请人： Kenji SAKURAI ,  Hideki YAGI ,  Hiroyuki YOSHINAGA

发明人： Kenji SAKURAI ,  Hideki YAGI ,  Hiroyuki YOSHINAGA

IPC分类号： H01L21/20

CPC分类号： H01L33/0075 ,  H01S5/2275

摘要： A method for producing a semiconductor optical device includes the steps of growing a semiconductor stacked layer including an etch stop layer and a plurality of semiconductor layers on a major surface of a substrate; forming a mask layer on a top surface of the semiconductor stacked layer so that a tip portion of each of protrusions that protrude from the top surface among protrusions generated in the step of growing the semiconductor stacked layer is exposed; etching the protrusion by wet etching using the mask layer; after etching the protrusion by wet etching, removing the protrusion by dry etching; and removing the mask layer from the top surface, after removing the protrusion by dry etching.

摘要翻译： 一种制造半导体光学器件的方法包括以下步骤：在衬底的主表面上生长包括蚀刻停止层和多个半导体层的半导体堆叠层; 在所述半导体层叠层的顶面上形成掩模层，使得在所述半导体堆叠层的生长步骤中产生的突起中从所述顶面突出的突起的前端部露出; 通过使用掩模层的湿蚀刻来蚀刻突起; 在通过湿蚀刻蚀刻突起之后，通过干蚀刻去除突起; 并且通过干蚀刻去除突起之后从顶表面去除掩模层。

公开(公告)号：US20120270347A1

公开(公告)日：2012-10-25

申请号：US13443944

申请日：2012-04-11

申请人： Hideki YAGI

发明人： Hideki YAGI

IPC分类号： H01L21/306

CPC分类号： H01S5/1231 ,  H01S5/026 ,  H01S5/0425 ,  H01S5/0654 ,  H01S5/125 ,  H01S5/22 ,  H01S2301/176

摘要： A method of manufacturing a ridge-type semiconductor laser includes the steps of forming a stacked semiconductor layer including an active layer and an etch stop layer on first and second surfaces of a substrate, etching the stacked semiconductor layer on the second surface, forming a semiconductor portion on the second surface, forming a ridge waveguide portion by etching the stacked semiconductor layer on the first surface to a first depth, forming semiconductor diffraction grating portions by etching the semiconductor portion to a second depth, and forming a diffraction grating section by providing resin diffraction grating portions between the semiconductor diffraction grating portions. The etching of the stacked semiconductor layer on the first surface and the etching of the semiconductor portion are performed simultaneously by using first and second mask portions.

摘要翻译： 制造脊型半导体激光器的方法包括以下步骤：在衬底的第一和第二表面上形成包括有源层和蚀刻停止层的堆叠半导体层，蚀刻第二表面上的堆叠半导体层，形成半导体 通过将第一表面上的堆叠半导体层蚀刻到第一深度而形成脊波导部分，通过将半导体部分蚀刻到第二深度形成半导体衍射光栅部分，并且通过提供树脂形成衍射光栅部分 半导体衍射光栅部分之间的衍射光栅部分。 通过使用第一和第二掩模部分同时进行第一表面上的层叠半导体层的蚀刻和半导体部分的蚀刻。

公开(公告)号：US20130071129A1

公开(公告)日：2013-03-21

申请号：US13609591

申请日：2012-09-11

申请人： Yoshihiro YONEDA ,  Hideki YAGI ,  Naoko INOUE

发明人： Yoshihiro YONEDA ,  Hideki YAGI ,  Naoko INOUE

IPC分类号： H04B10/06

CPC分类号： G02B6/12004 ,  G02B6/4279 ,  H01L2224/05554 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/00

摘要： A multi-channel optical waveguide receiver includes an optical input port; an optical branching unit; light-receiving elements having bias electrodes and signal electrodes; optical waveguides being optically coupled between the optical branching unit and the light-receiving elements; capacitors electrically connected between the bias electrodes and a reference potential, the capacitors and the bias electrodes being connected through interconnection patterns; and a signal amplifier including input electrodes. The optical branching unit, the light-receiving elements, the optical waveguides, and the capacitors are formed on a single substrate, the substrate having an edge extending in a first direction. The signal amplifier and the substrate are arranged in a second direction crossing the first direction. The input electrodes and the signal electrodes are arranged along the edge of the substrate. Each of the signal electrodes of the light-receiving elements is electrically connected through a bonding wire to the input electrode.

摘要翻译： 多通道光波导接收机包括光输入端口; 光分支单元; 具有偏置电极和信号电极的光接收元件; 光学波导光耦合在光学分支单元和光接收元件之间; 电连接在偏置电极和参考电位之间的电容器，电容器和偏置电极通过互连图形连接; 以及包括输入电极的信号放大器。 光分路单元，光接收元件，光波导和电容器形成在单个基板上，该基板具有沿第一方向延伸的边缘。 信号放大器和衬底沿与第一方向交叉的第二方向布置。 输入电极和信号电极沿着基板的边缘布置。 光接收元件的每个信号电极通过接合线电连接到输入电极。

公开(公告)号：US20120308173A1

公开(公告)日：2012-12-06

申请号：US13478280

申请日：2012-05-23

申请人： Hideki YAGI

发明人： Hideki YAGI

IPC分类号： G02F1/025 ,  H01L21/302

CPC分类号： G02F1/025 ,  G02F1/2257 ,  G02F2201/066

摘要： A method for manufacturing a semiconductor optical modulator includes forming a p-type semiconductor layer on a main surface of a p-type semiconductor substrate; forming a pair of stripe-shaped masks on the p-type semiconductor layer, the stripe-shaped masks extending in a first direction along the main surface of the p-type semiconductor substrate and being spaced apart from each other; simultaneously forming a hole and a pair of stripe structures extending in the first direction by etching the p-type semiconductor layer through the stripe-shaped masks, the pair of stripe structures defining the hole; after removing the stripe-shaped masks, forming a buried layer in the hole; forming a core layer on the buried layer and the stripe structures; and forming an upper cladding layer on the core layer. The buried layer is made of a semiconductor material with a lower optical absorption loss than that of the p-type semiconductor layer.

摘要翻译： 一种制造半导体光调制器的方法包括在p型半导体衬底的主表面上形成p型半导体层; 在p型半导体层上形成一对条形掩模，所述条形掩模沿着所述p型半导体衬底的主表面沿第一方向延伸并且彼此间隔开; 同时形成通过蚀刻p型半导体层通过条形掩模在第一方向延伸的孔和一对条纹结构，所述一对条纹结构限定该孔; 在去除条形掩模之后，在孔中形成掩埋层; 在掩埋层和条纹结构上形成核心层; 以及在所述芯层上形成上包层。 埋层由具有比p型半导体层低的光吸收损耗的半导体材料制成。

公开(公告)号：US20100034229A1

公开(公告)日：2010-02-11

申请号：US12464262

申请日：2009-05-12

申请人： Hideki YAGI

发明人： Hideki YAGI

IPC分类号： H01S5/026 ,  H01L21/00 ,  H01S5/125

CPC分类号： H01S5/125 ,  B82Y20/00 ,  H01S5/0654 ,  H01S5/1039 ,  H01S5/1215 ,  H01S5/1231 ,  H01S5/2009 ,  H01S5/305 ,  H01S5/3054 ,  H01S5/3211 ,  H01S5/341 ,  H01S5/34306

摘要： A semiconductor laser includes a first optical confinement layer, a plurality of first quantum wires and buried semiconductor regions disposed on a first area, a plurality of second quantum wires and buried semiconductor regions disposed on a second area, an active layer disposed on a third area, and a second optical confinement layer. The plurality of first quantum wires and the buried semiconductor regions constitute a first distributed Bragg reflector, and the plurality of second quantum wires and the buried semiconductor regions constitute a second distributed Bragg reflector. The third area is disposed between the first area and the second area. The buried semiconductor regions have a refractive index different from the average refractive index of the first quantum wires and the average refractive index of the second quantum wires. These distributed Bragg reflectors form a DBR laser having a cavity length defined by the length of the active layer.

摘要翻译： 半导体激光器包括第一光限制层，多个第一量子线和设置在第一区上的掩埋半导体区，多个第二量子线和设置在第二区上的掩埋半导体区，设置在第三区上的有源层 和第二光限制层。 多个第一量子线和埋入半导体区域构成第一分布布拉格反射器，并且多个第二量子线和掩埋半导体区域构成第二分布布拉格反射器。 第三区域设置在第一区域和第二区域之间。 埋入的半导体区域具有与第一量子线的平均折射率和第二量子线的平均折射率不同的折射率。 这些分布式布拉格反射器形成具有由有源层的长度限定的空腔长度的DBR激光器。