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    Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber
    1.
    发明授权
    Lithographic mask structure and method of producing the same comprising W and molybdenum alloy absorber 失效
    平版印刷掩模结构及其制造方法，包括W和钼合金吸收体

    公开(公告)号：US5733688A

    公开(公告)日：1998-03-31

    申请号：US570686

    申请日：1995-12-11

    申请人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

    发明人： Hideo Kato ,  Masao Sugata ,  Keiko Chiba ,  Hiroshi Maehara

    IPC分类号： G03F1/22 ,  G03F9/00

    CPC分类号： G03F1/22

    摘要： A mask suitably usable in X-ray lithography has a membrane and a radiation absorbing material pattern formed on the membrane, wherein the radiation absorbing material pattern contains an alloy including tungsten (W) and molybdenum (Mo), the proportion of the molybdenum content to the alloy being in a range of 0.1-50 wt %, the alloy having crystal precedence orientation of {110}. In one preferred form, the absorbing material pattern is provided on an amolphous metal layer formed on the mask membrane.

    摘要翻译： 适用于X射线光刻的掩模具有在膜上形成的膜和辐射吸收材料图案，其中辐射吸收材料图案包含包含钨（W）和钼（Mo）的合金，钼含量与 该合金的范围为0.1-50wt％，晶体优先取向为{110}的合金。 在一个优选形式中，吸收材料图案设置在形成在掩模膜上的淀粉金属层上。

    Mask structure exposure method
    2.
    发明授权
    Mask structure exposure method 有权
    面膜结构曝光方法

    公开(公告)号：US06337161B2

    公开(公告)日：2002-01-08

    申请号：US09161372

    申请日：1998-09-28

    申请人： Keiko Chiba ,  Hideo Kato ,  Hiroshi Maehara

    发明人： Keiko Chiba ,  Hideo Kato ,  Hiroshi Maehara

    IPC分类号： G03F900

    CPC分类号： G03F1/22 ,  G03F1/62

    摘要： A mask structure to be used for X-ray exposure or the like in manufacturing semiconductor devices prevents contaminants from adhering and accumulating on the surface of a mask, thereby extending the life of the mask. In this mask structure, titanium oxide films are formed on front and back pellicles that protect a mask, composed of a support film and an X-ray absorber, from dust or the like. Titanium oxide decomposes contaminants by functioning as a photocatalyst, and prevents the adhesion and accumulation of contaminants by an antistatic function based on photoconductivity. When a titanium oxide film is formed on the surface of the mask itself, it is preferable that the film be formed outside the exposure area or the like.

    摘要翻译： 在制造半导体器件中用于X射线曝光等的掩模结构防止污染物粘附并积聚在掩模的表面上，从而延长掩模的使用寿命。 在该掩模结构中，在保护由支撑膜和X射线吸收体构成的掩模的灰尘等上的前面和后面防护薄膜上形成氧化钛膜。 氧化钛通过作为光催化剂起作用来分解污染物，并且通过基于光电导性的抗静电功能来防止污染物的粘附和积累。 当在掩模本身的表面上形成氧化钛膜时，优选将膜形成在曝光区域等之外。

    Method of manufacturing semiconductor devices by performing coating, heating, exposing and developing in a low-oxygen or oxygen free controlled environment
    5.
    发明授权
    Method of manufacturing semiconductor devices by performing coating, heating, exposing and developing in a low-oxygen or oxygen free controlled environment 失效
    通过在低氧或无氧的受控环境中进行涂覆，加热，曝光和显影来制造半导体器件的方法

    公开(公告)号：US6087076A

    公开(公告)日：2000-07-11

    申请号：US968589

    申请日：1997-11-13

    申请人： Keita Sakai ,  Keiko Chiba ,  Hiroshi Maehara

    发明人： Keita Sakai ,  Keiko Chiba ,  Hiroshi Maehara

    IPC分类号： G03F7/004 ,  G03F7/30 ,  G03F7/38 ,  H01L21/027 ,  G03C5/00

    CPC分类号： G03F7/0048

    摘要： A method of manufacturing semiconductor devices includes a coating step for coating a substrate using a resist solution including a base resin and a low-oxygen or oxygen-free solvent in which oxygen is removed by nitrogen bubbling, a heating step for heating the substrate coated with the resist, an exposing step for exposing the substrate with radiation to transfer a pattern, and a developing step for developing the exposed substrate. The coating step, the heating step, the exposing step and the developing step are performed under an environment controlled in a low-oxygen or oxygen-free state.

    摘要翻译： 一种制造半导体器件的方法包括：涂覆步骤，用于使用包含基础树脂的抗蚀剂溶液和通过氮气鼓泡除去氧的低氧或无氧溶剂的涂覆步骤，用于加热涂覆有 抗蚀剂，用于用辐射曝光衬底以转印图案的曝光步骤，以及用于显影曝光的衬底的显影步骤。 涂布步骤，加热步骤，曝光步骤和显影步骤在控制在低氧或无氧状态的环境下进行。

    X-ray mask and X-ray exposure method using the same
    7.
    发明授权
    X-ray mask and X-ray exposure method using the same 失效
    X射线掩模和使用其的X射线曝光方法

    公开(公告)号：US6101237A

    公开(公告)日：2000-08-08

    申请号：US917854

    申请日：1997-08-27

    申请人： Takeshi Miyachi ,  Keiko Chiba ,  Hiroshi Osawa ,  Koichi Sentoku ,  Hiroshi Maehara

    发明人： Takeshi Miyachi ,  Keiko Chiba ,  Hiroshi Osawa ,  Koichi Sentoku ,  Hiroshi Maehara

    IPC分类号： G03F1/22 ,  G03F1/62 ,  G03F7/20 ,  G21K1/10 ,  G21K5/00

    CPC分类号： G03F1/22 ,  G03F1/62 ,  G03F7/70691 ,  G21K1/10

    摘要： An X-ray mask includes a holding frame, a membrane held by the holding frame, a pattern formed on a surface of the membrane by an X-ray absorptive material, the surface being disposed opposed to a workpiece to which the pattern is to be transferred when the mask is mounted in an exposure apparatus, a member for reinforcing the holding frame and having a portion placed closer to the workpiece than to the membrane and a pellicle provided at a side where the pattern is formed, the pellicle being attached to the portion of the member so that the pellicle is placed at the workpiece side of the membrane.

    摘要翻译： X射线掩模包括保持框架，由保持框架保持的膜，通过X射线吸收材料形成在膜的表面上的图案，该表面设置成与图案所在的工件相对 当掩模安装在曝光装置中时转印，用于加强保持框架并且具有比膜更靠近工件的部分的膜和设置在图案形成侧的防护薄膜组件，防护薄膜组件附接到 部件，使防护薄膜组件放置在膜的工件侧。

    X-ray mask structure, process for production thereof, apparatus and method for X-ray exposure with the X-ray mask structure, and semiconductor device produced by the X-ray exposure method
    8.
    发明授权
    X-ray mask structure, process for production thereof, apparatus and method for X-ray exposure with the X-ray mask structure, and semiconductor device produced by the X-ray exposure method 失效
    X射线掩模结构，其制造方法，用X射线掩模结构X射线曝光的装置和方法以及通过X射线曝光方法制造的半导体器件

    公开(公告)号：US5553110A

    公开(公告)日：1996-09-03

    申请号：US345395

    申请日：1994-11-18

    申请人： Koichi Sentoku ,  Kenji Saito ,  Keiko Chiba ,  Hiroshi Maehara

    发明人： Koichi Sentoku ,  Kenji Saito ,  Keiko Chiba ,  Hiroshi Maehara

    IPC分类号： G03F7/20 ,  C30B33/00 ,  G03F1/22 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L39/00

    CPC分类号： G03F1/22 ,  Y10S430/167 ,  Y10S430/168

    摘要： An X-ray mask structure for X-ray lithography comprises a pattern, an X-ray transmissive film for holding the pattern, and a frame for supporting the X-ray transmissive film, wherein a light-scattering prevention film is formed on at least a part of the surface of the X-ray transmissive film and/or of the pattern, and the light scattering prevention film may be a flat coating film formed on at least one of the top face and the back face of the X-ray transmissive film and having a refractive index substantially equal to the refractive index of the X-ray transmissive film. A process for producing the X-ray mask structure comprises steps of forming a flat coating film having a refractive index substantially the same as that of the X-ray transmissive film on at least one of the top face and the back face of the X-ray transmissive film, and forming a pattern at least on the top face of the X-ray transmissive film. An X-ray exposure apparatus comprises an X-ray source, and the X-ray mask structure, and conducts transcription of the pattern formed on the x-ray mask structure onto a transcription-receiving member by projecting X-rays through the X-ray mask structure to the transcription receiving member.

    摘要翻译： 用于X射线光刻的X射线掩模结构包括图案，用于保持图案的X射线透射膜和用于支撑X射线透射膜的框架，其中至少形成光散射防止膜 X射线透过膜表面的一部分和/或图案的一部分，光散射防止膜可以是形成在X射线透射性的上表面和背面的至少一面上的平坦的涂膜 并且具有基本上等于X射线透射膜的折射率的折射率。 一种X射线掩模结构体的制造方法，其特征在于，在上述X射线掩模结构的上表面和背面的至少一面上，形成与X射线透过膜的折射率基本相同的折射率的平面涂膜， 并且至少在X射线透射膜的顶面上形成图案。 X射线曝光装置包括X射线源和X射线掩模结构，并且通过X射线X射线透过X射线掩模结构将X射线掩模结构上形成的图案转印到转录接收部件上， 射线掩模结构。

    X-ray mask and fabrication process using it
    9.
    发明授权
    X-ray mask and fabrication process using it 失效
    X射线掩模和使用它的制作工艺

    公开(公告)号：US5870448A

    公开(公告)日：1999-02-09

    申请号：US855473

    申请日：1997-05-13

    申请人： Hiroshi Maehara ,  Keiko Chiba

    发明人： Hiroshi Maehara ,  Keiko Chiba

    IPC分类号： G03F1/22 ,  G21K1/10 ,  H01L21/027 ,  G21K5/00

    CPC分类号： G03F1/22 ,  G21K1/10

    摘要： The present X-ray mask comprises an X-ray transmitting film, and a mask pattern formed on the X-ray transmitting film, wherein the mask pattern includes a mixture of a high-contrast pattern and a low-contrast pattern against X-rays and wherein the high-contrast pattern is comprised of stacked films the number of which is larger than that of the low-contrast pattern and which are made of different kinds of materials. A fabrication process of this X-ray mask comprises a step of forming a first metal film; a step of forming a second metal film of a different kind of material from the first metal film, thereon; and a step of successively performing a resist application process and an etching process to form a portion where the both first and second metal films are removed, a portion where only the first metal layer is left, and a portion where the both first and second metal layers are left, thereby forming a mask pattern.

    摘要翻译： 本X射线掩模包括X射线透射膜和形成在X射线透射膜上的掩模图案，其中掩模图案包括针对X射线的高对比度图案和低对比度图案的混合物 并且其中所述高对比度图案包括数量大于所述低对比度图案并且由不同种类的材料制成的堆叠薄膜。 该X射线掩模的制造工艺包括形成第一金属膜的步骤; 在其上形成与第一金属膜不同种类的材料的第二金属膜的步骤; 以及连续进行抗蚀剂涂布处理和蚀刻工序以形成去除了第一和第二金属膜两者的部分，仅剩下第一金属层的部分，以及第一和第二金属 留下层，从而形成掩模图案。