公开(公告)号：US09166370B2

公开(公告)日：2015-10-20

申请号：US13456909

申请日：2012-04-26

申请人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

发明人： Takashi Kondo ,  Hideo Nakayama ,  Kazutaka Takeda ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/183 ,  H01S5/10 ,  H01S5/32 ,  H01S5/20

CPC分类号： H01S5/18358 ,  H01S5/1039 ,  H01S5/18311 ,  H01S5/209 ,  H01S5/3211

摘要： A vertical cavity surface emitting laser includes a first semiconductor multilayer reflector, a resonator, and a second semiconductor multilayer reflector. The first semiconductor multilayer reflector is formed on a substrate and is configured by stacking a high refractive index layer having a relatively high refractive index and a low refractive index layer having a relatively low refractive index. The resonator includes an active layer formed on the first semiconductor multilayer reflector. The second semiconductor multilayer reflector is configured by stacking the high refractive index layer and the low refractive index layer. The resonator includes a pair of spacer layers disposed vertically on the active layer and a resonator extension area formed at one side of the pair of spacer layers. The resonator extension area contains a material in which an energy level with a crystal defect is higher than a general energy level without the crystal defect.

摘要翻译： 垂直腔表面发射激光器包括第一半导体多层反射器，谐振器和第二半导体多层反射器。 第一半导体多层反射器形成在基板上，并且通过堆叠具有较高折射率的高折射率层和折射率相对较低的低折射率层而构成。 谐振器包括形成在第一半导体多层反射器上的有源层。 第二半导体多层反射器通过层叠高折射率层和低折射率层而构成。 谐振器包括垂直于有源层设置的一对间隔层和形成在一对间隔层的一侧的谐振器延伸区域。 谐振器延伸区域包含其中具有晶体缺陷的能级高于没有晶体缺陷的一般能级的材料。

公开(公告)号：US08923742B2

公开(公告)日：2014-12-30

申请号：US13399104

申请日：2012-02-17

申请人： Osamu Ueno ,  Tomoaki Kojima ,  Hideo Nakayama ,  Masateru Yamamoto

发明人： Osamu Ueno ,  Tomoaki Kojima ,  Hideo Nakayama ,  Masateru Yamamoto

IPC分类号： G03G15/20

CPC分类号： G03G15/2007

摘要： A fixing device includes a transport member that transports a recording medium in a first direction, the recording medium having on one side thereof an image formed of an image forming material that is to be fixed by absorbing light; a first chip that has a first light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally; and a second chip that has a second light-emitting area in which a plurality of light-emitting elements that emit light toward the one side of the recording medium are arranged two-dimensionally. A gap between the first light-emitting area and the second light-emitting area extends at an angle with respect to the first direction, and a portion of the first light-emitting area and a portion of the second light-emitting area overlap each other in the first direction.

摘要翻译： 定影装置包括：输送构件，其沿第一方向输送记录介质，所述记录介质的一侧具有通过吸收光而被固定的图像形成材料形成的图像; 具有第一发光区域的第一芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置; 并且具有第二发光区域的第二芯片，其中向记录介质的一侧发射光的多个发光元件被二维布置。 第一发光区域和第二发光区域之间的间隙相对于第一方向成一角度延伸，并且第一发光区域和第二发光区域的一部分彼此重叠 在第一个方向。

公开(公告)号：US08477821B2

公开(公告)日：2013-07-02

申请号：US12861438

申请日：2010-08-23

申请人： Masahiro Yoshikawa ,  Hideo Nakayama

发明人： Masahiro Yoshikawa ,  Hideo Nakayama

IPC分类号： H01S5/00

CPC分类号： H01S5/18338 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18347 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18358

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first reflector of a first conductive type formed on the substrate; an active region formed on the first reflector; a second reflector of a second conductive type formed on the active region; and a current confining layer formed between the first reflector and the second reflector; and a metallic electrode that is formed on the second reflector, and is electrically connected to the second reflector. A conductive region with an anisotropy where a length in a longitudinal direction is different from a length in a short direction is formed in the current confining layer, and an opening defining a beam aperture is formed in the metallic electrode, and a diameter of the opening in the longitudinal direction is smaller than the length of the conductive region in the longitudinal direction.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 形成在所述基板上的第一导电类型的第一反射器; 形成在所述第一反射器上的有源区; 形成在所述有源区上的第二导电类型的第二反射器; 以及形成在所述第一反射器和所述第二反射器之间的电流限制层; 以及金属电极，其形成在所述第二反射器上，并且电连接到所述第二反射器。 在电流限制层中形成具有纵向长度不同长度方向的各向异性的导电区域，并且在金属电极中形成限定了光束孔径的开口，开口部的直径 在长度方向上比导电区域的长度方向的长度小。

公开(公告)号：US08290670B2

公开(公告)日：2012-10-16

申请号：US11919500

申请日：2006-04-26

申请人： Tetsuji Tanaka ,  Masami Higaki ,  Hideo Nakayama ,  Eiichi Sakai ,  Hidenobu Tsukada

发明人： Tetsuji Tanaka ,  Masami Higaki ,  Hideo Nakayama ,  Eiichi Sakai ,  Hidenobu Tsukada

IPC分类号： B60W10/02 ,  B60W10/10 ,  F16H31/00 ,  F16H61/00 ,  G06F17/00 ,  G06F19/00

CPC分类号： F16H61/061 ,  F16H61/08 ,  F16H61/684 ,  F16H2059/363 ,  F16H2059/425 ,  F16H2061/0096 ,  Y10T477/6394 ,  Y10T477/6414 ,  Y10T477/69335

摘要： A clutch control device includes: a plurality of hydraulic clutches built into a transmission; a clutch switching pattern storage device in which a plurality of clutch switching patterns, each defining engage/release changeover timing with which the plurality of hydraulic clutches are engaged/released are stored in correspondence to individual speed change patterns adopted by the transmission; a clutch switching pattern selection device that selects a clutch switching pattern stored in the clutch switching pattern storage device in correspondence to a speed change pattern for the transmission at a time of speed change; and a hydraulic control device that executes hydraulic control for the plurality of hydraulic clutches in correspondence to the clutch switching pattern selected by the clutch switching pattern selection device.

摘要翻译： 离合器控制装置包括：内置于变速器中的多个液压离合器; 一种离合器切换模式存储装置，其中，与传送所采用的各个速度变化模式相对应地存储有多个离合器切换模式，每个离合器切换模式各自定义与多个液压离合器接合/释放的接合/释放切换定时; 离合器切换模式选择装置，其对应于速度变化时的变速器的变速模式，选择存储在离合器切换模式存储装置中的离合器切换模式; 以及液压控制装置，其对应于由离合器切换模式选择装置选择的离合器切换模式，对多个液压离合器执行液压控制。

公开(公告)号：US20110150500A1

公开(公告)日：2011-06-23

申请号：US12775683

申请日：2010-05-07

申请人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

发明人： Kazuyuki Matsushita ,  Hideo Nakayama ,  Masahiro Yoshikawa ,  Kazutaka Takeda

IPC分类号： H04B10/04 ,  H01S5/18 ,  H01L21/28 ,  G11B7/00

CPC分类号： H01S5/18313 ,  H01S5/02212 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/18347 ,  H01S5/18377 ,  H01S5/18394

摘要： A vertical cavity surface emitting laser that includes: a substrate; a first semiconductor multilayer reflector; an active region; a second semiconductor multilayer reflector; a columnar structure formed on the substrate; a current narrowing layer that is formed inside of the columnar structure, and has a conductive region surrounded by an oxidization region selectively oxidized; a first electrode that is formed at a top of the columnar structure, and defines a beam window; a first insulating film that covers the beam window; and a second insulating film of which a second refractive index is larger than the first refractive index. A reflection ratio in a second region where the second insulating film is formed is lower than a reflection ratio in a first region where only the first insulating film is formed.

摘要翻译： 一种垂直腔表面发射激光器，包括：衬底; 第一半导体多层反射器; 活跃区域 第二半导体多层反射器; 形成在基板上的柱状结构; 形成在柱状结构内部的电流变窄层，具有被氧化区域包围的导电区域选择性氧化; 第一电极，其形成在所述柱状结构的顶部，并且限定梁窗; 覆盖梁窗的第一绝缘膜; 第二绝缘膜的第二折射率大于第一折射率。 在形成第二绝缘膜的第二区域中的反射率低于仅形成第一绝缘膜的第一区域中的反射率。

公开(公告)号：US07684459B2

公开(公告)日：2010-03-23

申请号：US11338739

申请日：2006-01-25

申请人： Naotaka Mukoyama ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Yasuaki Kuwata

发明人： Naotaka Mukoyama ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Yasuaki Kuwata

IPC分类号： H01S3/097

CPC分类号： B82Y20/00 ,  H01L2224/48091 ,  H01L2924/19107 ,  H01S5/02212 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02288 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18358 ,  H01S5/3432 ,  H01L2924/00014

摘要： There is provided a semiconductor laser apparatus. An electrode of a semiconductor laser diode is bonded via a die attach and the electrode of the semiconductor laser diode includes Au and at least one of materials that compose the die attach except Au, in advance.

摘要翻译： 提供半导体激光装置。 半导体激光二极管的电极通过管芯连接接合，并且半导体激光二极管的电极预先包括Au和除Au之外的组合芯片的至少一种材料。

公开(公告)号：US07502566B2

公开(公告)日：2009-03-10

申请号：US11319702

申请日：2005-12-29

申请人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

发明人： Yasuaki Kuwata ,  Hideo Nakayama ,  Akemi Murakami ,  Ryoji Ishii ,  Naotaka Mukoyama

IPC分类号： H04B10/12 ,  H04B10/00

CPC分类号： H04B10/0799 ,  G02B6/32 ,  G02B6/4206 ,  H04B10/114

摘要： A light-emitting module outputting laser beam emitted from a semiconductor light-emitting element via a lens, the light-emitting module includes a first main plane, a mount portion on the first main plane that mounts the semiconductor light-emitting element, a lens holding portion that holds the lens so that a light axis of the lens corresponds to a reference line crossed at right angles to the first main plane, a semiconductor light-receiving element that receives the laser beam reflected by the lens out of the laser beam emitted from the semiconductor light-emitting element. The semiconductor light-receiving element is positioned on the light axis of the lens and the semiconductor light-emitting element is provided away from the light axis of the lens.

摘要翻译： 一种发光模块，其经由透镜输出从半导体发光元件发射的激光束，所述发光模块包括第一主平面，安装半导体发光元件的第一主平面上的安装部，透镜 保持部分，其保持透镜，使得透镜的光轴对应于与第一主平面成直角交叉的参考线;半导体光接收元件，接收由所发射的激光束中的透镜反射的激光束 从半导体发光元件。 半导体光接收元件位于透镜的光轴上，半导体发光元件远离透镜的光轴设置。

公开(公告)号：US20090016732A1

公开(公告)日：2009-01-15

申请号：US12036570

申请日：2008-02-25

申请人： Osamu Ueno ,  Akira Sakamoto ,  Kazuhiro Sakai ,  Hideo Nakayama ,  Akemi Murakami

发明人： Osamu Ueno ,  Akira Sakamoto ,  Kazuhiro Sakai ,  Hideo Nakayama ,  Akemi Murakami

IPC分类号： H04B10/00 ,  H01S5/042

CPC分类号： H04B10/504 ,  H01S5/0427 ,  H01S5/06812 ,  H01S5/18311

摘要： Provided is a method for driving a surface emitting semiconductor laser including an active region that generates light, a resonator structure disposed such that it sandwiches the active region, and a driving electrode that provides power to the active region. The surface emitting semiconductor laser has an internal resistance defined by voltage and current applied to the driving electrode. The method includes applying a modulation signal to the driving electrode, in which the modulation signal has a current amplitude defined by a first current value and a second current value that is greater than the first current value. The modulation signal is in a negative gradient region in which the internal resistance decreases in contrast to the increase of the current.

摘要翻译： 提供了一种用于驱动表面发射半导体激光器的方法，所述表面发射半导体激光器包括产生光的有源区，设置成使其夹持有源区的谐振器结构以及向有源区提供电力的驱动电极。 表面发射半导体激光器具有由施加到驱动电极的电压和电流限定的内部电阻。 该方法包括将调制信号施加到驱动电极，其中调制信号具有由第一电流值定义的电流幅度和大于第一电流值的第二电流值。 与电流增加相反，调制信号处于负梯度区域，其中内阻减小。

公开(公告)号：US20050271107A1

公开(公告)日：2005-12-08

申请号：US10990373

申请日：2004-11-18

申请人： Akemi Murakami ,  Hideo Nakayama ,  Yasuaki Kuwata ,  Teiichi Suzuki ,  Ryoji Ishii

发明人： Akemi Murakami ,  Hideo Nakayama ,  Yasuaki Kuwata ,  Teiichi Suzuki ,  Ryoji Ishii

IPC分类号： H01S5/183 ,  H01S5/00 ,  H01S5/026 ,  H01S5/068

CPC分类号： H01S5/18341 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2924/1301 ,  H01S5/0261 ,  H01S5/06825 ,  H01S5/18311 ,  H01S5/2009 ,  Y10S438/979 ,  Y10S438/983 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor laser apparatus has a Zener diode containing a first semiconductor region of a first conduction type and a second semiconductor region of a second conduction type joined with the first semiconductor region, and a vertical-cavity surface-emitting semiconductor laser diode stacked above the Zener diode and containing at least a first mirror layer of a first conduction type, a second mirror layer of a second conduction type and an active region sandwiched between the first and second mirror layers. The first semiconductor region and the second mirror layer are electrically connected and the second semiconductor region and the first mirror layer are electrically connected.

摘要翻译： 半导体激光装置具有齐纳二极管，该齐纳二极管含有第一导电类型的第一半导体区域和与第一半导体区域连接的第二导电类型的第二半导体区域，以及堆叠在齐纳二极管上的垂直腔表面发射半导体激光二极管 二极管，并且至少包含第一导电类型的第一镜层，第二导电类型的第二镜层和夹在第一和第二镜层之间的有源区。 第一半导体区域和第二镜像层电连接，并且第二半导体区域和第一镜像层电连接。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。