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    Image recording apparatus with an array light source
    1.
    发明授权
    Image recording apparatus with an array light source 失效
    具有阵列光源的图像记录装置

    公开(公告)号：US5963242A

    公开(公告)日：1999-10-05

    申请号：US739220

    申请日：1996-10-29

    申请人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

    发明人： Hideo Nakayama ,  Hiromi Otoma ,  Nobuaki Ueki ,  Yasuji Seko ,  Akemi Murakami ,  Mario Fuse ,  Masao Ito ,  Izumi Iwasa

    IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  B41J2/435 ,  B41J2/47

    CPC分类号： B41J2/45

    摘要： An image recording apparatus has an array light source having a plurality of light-emitting elements arrayed in a predetermined density; a photosensitive member exposed to light beams emitted from the plural light-emitting elements so that images are recorded by fixing a traveling path of the light beams from the plural light-emitting elements to the photosensitive member and by moving the photosensitive member relative to the array light source; a beam-converging unit which intercrosses a bundle of the light beams emitted from the light-emitting elements onto a beam-conversion point; and an focusing unit disposed between the beam-converging unit and the photosensitive member, which images the light beams emitted from the plural of light-emitting elements and intercrossed by the beam-converging unit onto the photosensitive member.

    摘要翻译： 一种图像记录装置，具有排列成规定密度的多个发光元件的阵列光源; 一个感光元件暴露于从多个发光元件发射的光束上，使得通过将来自多个发光元件的光束的行进路径固定在感光元件上并通过使感光元件相对于阵列移动来记录图像 光源; 光束会聚单元，其将从发光元件发射的光束交叉到光束转换点; 以及设置在所述光束会聚单元和所述感光构件之间的聚焦单元，其对从所述多个发光元件发射的光束进行成像，并且通过所述光束会聚单元与所述感光构件交叉。

    Semiconductor laser array driving method, semiconductor laser array driving device and image forming apparatus
    3.
    发明授权
    Semiconductor laser array driving method, semiconductor laser array driving device and image forming apparatus 失效
    半导体激光阵列驱动方法，半导体激光阵列驱动装置和图像形成装置

    公开(公告)号：US5809052A

    公开(公告)日：1998-09-15

    申请号：US731750

    申请日：1996-10-18

    申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

    发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Mario Fuse

    IPC分类号： H01S5/062 ,  H01S5/40 ,  H01S3/08

    CPC分类号： H01S5/4031 ,  H01S5/0021 ,  H01S5/06216

    摘要： A semiconductor laser array driving method for driving a semiconductor laser array having a plurality of light-emitting points arranged on a base member. The semiconductor laser array driving method has a step of driving the plurality of light-emitting points by a driving pulse current of a pulse width and a duty factor meeting an inequality: .DELTA.T.sub.1 /.DELTA.T.sub.0

    摘要翻译： 一种用于驱动具有布置在基底构件上的多个发光点的半导体激光器阵列的半导体激光阵列驱动方法。 半导体激光阵列驱动方法具有通过满足不等式的脉冲宽度和占空比的驱动脉冲电流来驱动多个发光点的步骤：DELTA T1 / DELTA T0 <+ E，fra 1/2 + EE 其中，当使用连续电流以连续驱动模式驱动半导体激光器阵列时，DELTA T0是发光点的有源层中的温度升高，并且DELTA T1是发光的有源层中的温度升高 当使用脉冲电流以脉冲驱动模式驱动半导体激光器阵列时的点。 在半导体激光器阵列驱动方法中，多个发光点由占空比为0.4以下的驱动脉冲电流驱动，满足不等式：y <3.1exp（-8.9x），其中x是占空系数 y是脉冲宽度（mu s）。

    Optoelectro transducer array, and light-emitting device array and fabrication process thereof
    4.
    发明授权
    Optoelectro transducer array, and light-emitting device array and fabrication process thereof 失效
    光电转换器阵列，发光元件阵列及其制造方法

    公开(公告)号：US5990494A

    公开(公告)日：1999-11-23

    申请号：US827358

    申请日：1997-03-27

    申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

    发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

    IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  F21S2/00 ,  F21V23/00 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/16 ,  H01L33/26 ,  H01L33/58 ,  H01L33/60 ,  H01S5/00 ,  H01S5/02 ,  H04N1/04 ,  H01L33/00

    CPC分类号： B41J2/45

    摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.

    摘要翻译： 描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。 根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是 设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5588016A

    公开(公告)日：1996-12-24

    申请号：US523389

    申请日：1995-09-05

    申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

    发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

    摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

    摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

    Method of making a semiconductor laser device
    6.
    发明授权
    Method of making a semiconductor laser device 失效
    制造半导体激光器件的方法

    公开(公告)号：US5648295A

    公开(公告)日：1997-07-15

    申请号：US687938

    申请日：1996-07-29

    申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

    发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01L21/20

    CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

    摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

    摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

    Semiconductor laser device
    7.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5491709A

    公开(公告)日：1996-02-13

    申请号：US106700

    申请日：1993-08-16

    申请人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

    发明人： Yasuji Seko ,  Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Kiichi Ueyanagi ,  Yasuhiro Shiraki

    IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/32325 ,  H01S5/34326 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3406 ,  H01S5/3407

    摘要： In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.

    摘要翻译： 在根据本发明的半导体激光器件中，包覆层包括第一覆盖层，其每一个具有比有源层更大的带隙，并且具有0.003至0.3μm的厚度，以及第二覆盖层具有 比有源层​​低的折射率，并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中，第一覆盖层将载流子限制在有源层中，而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成，所以载流子由于其隧道现象而难以从有源层向外移动，并且即使其晶格常数稍微不同，第一覆层可以是晶格 与底物匹配。 为此，可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。

    Semiconductor laser device and driving method for the same as well as tracking servo system employing the same
    8.
    发明授权
    Semiconductor laser device and driving method for the same as well as tracking servo system employing the same 失效
    半导体激光器件及其驱动方法以及使用其的跟踪伺服系统

    公开(公告)号：US5533042A

    公开(公告)日：1996-07-02

    申请号：US317594

    申请日：1994-10-03

    申请人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

    发明人： Hideki Fukunaga ,  Kaoru Yasukawa ,  Hideo Nakayama ,  Nobuaki Ueki ,  Hiromi Otoma ,  Mario Fuse

    IPC分类号： G11B7/09 ,  G11B7/125 ,  H01S5/042 ,  H01S5/062 ,  H01S5/20 ,  H01S5/40 ,  H01S3/18 ,  G11B7/00

    CPC分类号： G11B7/127 ,  G11B7/0901 ,  H01S5/0425 ,  H01S5/20 ,  H01S5/06243 ,  H01S5/4031

    摘要： A semiconductor laser device which allows high speed correction of the position of a laser spot on an optical disk is disclosed. The semiconductor laser device comprises an active layer which oscillates a laser beam when electric current is supplied thereto, and a plurality of independent electrodes for varying the current density distribution in the active layer to vary the intensity distribution of the laser beam to be emitted from an emergent face of the semiconductor laser device. With the semiconductor laser device, by supplying electric currents individually from the plurality of independent electrodes to vary the current density distribution in the active layer, the beam spot position can be corrected within the frequency bandwidth of several tens MHz by direct modulation of the semiconductor laser device. Also a driving method for the semiconductor laser device and a tracking servo system in which the semiconductor laser device is incorporated are disclosed.

    摘要翻译： 公开了一种允许高速校正光盘上的激光点位置的半导体激光器件。 半导体激光器件包括在向其提供电流时使激光束振荡的有源层，以及用于改变有源层中的电流密度分布的多个独立电极，以改变激光束的发射强度分布 半导体激光装置的紧急面。 利用半导体激光装置，通过从多个独立电极分别供给电流来改变有源层中的电流密度分布，可以通过半导体激光器的直接调制在数十MHz的频带内修正光束位置 设备。 还公开了半导体激光器件的驱动方法和其中结合半导体激光器件的跟踪伺服系统。

    Method of manufacturing a semiconductor laser device
    10.
    发明授权
    Method of manufacturing a semiconductor laser device 失效
    制造半导体激光器件的方法

    公开(公告)号：US5394425A

    公开(公告)日：1995-02-28

    申请号：US201342

    申请日：1994-02-24

    申请人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

    发明人： Hideki Fukunaga ,  Nobuaki Ueki ,  Hiromi Otoma ,  Hideo Nakayama

    IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S3/19

    CPC分类号： H01S5/22 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2226 ,  H01S5/223

    摘要： The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.

    摘要翻译： 该方法适用于半导体激光器件的制造，该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层，半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中，将第一杂质扩散源膜施加在半导体层的顶部，在第一杂质扩散源膜的顶部施加绝缘膜，由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状，在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜， 杂质从第一杂质扩散源膜热扩散，相对于绝缘膜选择性地蚀刻扩散保护膜，第二杂质以绝缘膜作为掩模扩散。