公开(公告)号：US06562400B2

公开(公告)日：2003-05-13

申请号：US09844071

申请日：2001-04-30

申请人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

发明人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

IPC分类号： B05D312

CPC分类号： C23C14/564 ,  C23C14/562 ,  H01L31/20 ,  Y02E10/50

摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

摘要翻译： 气体吸附构件设置在与成膜室连通的空间中，并且沉积膜沉积，同时连续地供给从该构件释放的气体成分，从而能够以良好的再现性在基板上形成高品质和均匀的沉积膜。

公开(公告)号：US06811816B2

公开(公告)日：2004-11-02

申请号：US10195543

申请日：2002-07-16

申请人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

发明人： Hideo Tamura ,  Masahiro Kanai ,  Yasuyoshi Takai ,  Hiroshi Shimoda ,  Hidetoshi Tsuzuki

IPC分类号： C23C1600

CPC分类号： C23C14/564 ,  C23C14/562 ,  H01L31/20 ,  Y02E10/50

摘要： A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.

摘要翻译： 气体吸附构件设置在与成膜室连通的空间中，并且沉积膜沉积，同时连续地供给从该构件释放的气体成分，从而能够以良好的再现性在基板上形成高品质和均匀的沉积膜。

公开(公告)号：US20050000563A1

公开(公告)日：2005-01-06

申请号：US10834016

申请日：2004-04-29

申请人： Akiya Nakayama ,  Hideo Tamura ,  Yasuyoshi Takai

发明人： Akiya Nakayama ,  Hideo Tamura ,  Yasuyoshi Takai

IPC分类号： C23C14/08 ,  H01L21/285 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/075 ,  H01L31/076 ,  H01L31/18 ,  H01L31/00

CPC分类号： H01L31/022475 ,  H01L31/02366 ,  H01L31/076 ,  H01L31/1884 ,  Y02E10/548

摘要： The stacked photovoltaic element of the present invention is a stacked photovoltaic element comprising a stack formed of a plurality of unit elements each having a pin constitution, and a transparent electrode provided on the surface of a light incident side of the stacked unit elements, wherein the transparent electrode provided on the surface of the light incident side comprises indium tin oxide (ITO), and the transparent electrode has 90% or more and 99.8% or less in transmittivity of a light of the maximum absorption wavelength of a unit element having the smallest current in a light collection efficiency measurement among the plurality of unit elements, and 50 Ω/□ or more and 300 Ω/□ or less in sheet resistance. Such a constitution of the present invention provides a stacked photovoltaic element having an excellent photoelectric conversion efficiency and high reliability at a low cost.

摘要翻译： 本发明的叠层光电元件是堆叠的光电元件，其包括由具有引脚结构的多个单元构成的叠层和设置在层叠单元元件的光入射侧的表面的透明电极， 设置在光入射侧表面的透明电极包括氧化铟锡（ITO），透明电极的透射率为具有最小吸光度的单位元件的最大吸收波长的光的透过率的90％以上且99.8％以下 在多个单位元件之间的采光效率测量中的电流，以及50Ω/□以上且300Ω/□以下的薄层电阻。 本发明的这种结构提供了一种具有优异的光电转换效率和高可靠性的低成本的叠层光电元件。

公开(公告)号：US6093290A

公开(公告)日：2000-07-25

申请号：US76238

申请日：1998-05-12

申请人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

发明人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

IPC分类号： C23C14/35 ,  C23C14/56 ,  H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3405

摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+1/2)T wherein n is z-1/16

摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场以直角彼此交叉，并且多个隧道状磁通的往复运动的周期T被控制为L / v =（n ++ E ，1/2 + EE）T，其中n是z- + E，fra 1/16 + EE

公开(公告)号：US06306267B1

公开(公告)日：2001-10-23

申请号：US09588626

申请日：2000-06-07

申请人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

发明人： Hideo Tamura ,  Yasushi Fujioka ,  Masahiro Kanai ,  Akira Sakai

IPC分类号： C23C1434

CPC分类号： H01J37/3455 ,  C23C14/35 ,  C23C14/562 ,  H01J37/3405

摘要： The sputtering method of the present invention comprises the steps of forming a plurality of tunnel-like magnetic fluxes on a target, forming an electric field between the target and a belt-like substrate, and conveying the belt-like substrate while reciprocating the plurality of tunnel-like magnetic fluxes at least in the direction of conveying the belt-like substrate, wherein the speed v of conveying the substrate, the distance L in the direction of conveying the belt-like substrate between two adjacent points where the magnetic field of the plurality of tunnel-like magnetic fluxes and the electric field cross each other at a right angle, and the period T of the reciprocating motion of the plurality of tunnel-like magnetic fluxes are controlled so as to L/v=(n+½)T wherein n is z−{fraction (1/16)}

摘要翻译： 本发明的溅射方法包括以下步骤：在目标上形成多个隧道状磁通量，在靶和带状基底之间形成电场，并且在传送带状衬底的同时使多个 至少在输送带状基板的方向上的隧道状磁通量，其中传送基板的速度v，在传送带状基板的方向上的距离L，两个相邻点之间的磁场 多个隧道状磁通和电场成直角交叉，多个隧道状磁通的往复运动的周期T被控制为L / v =（n + 1/2） T，其中n是z- {分数（1/16）}

公开(公告)号：US5589007A

公开(公告)日：1996-12-31

申请号：US523169

申请日：1995-09-05

申请人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

发明人： Yasushi Fujioka ,  Shotaro Okabe ,  Masahiro Kanai ,  Hideo Tamura ,  Atsushi Yasuno ,  Akira Sakai ,  Tadashi Hori

IPC分类号： H01L21/205 ,  H01L31/075 ,  H01L31/20

CPC分类号： H01L31/076 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L31/075 ,  H01L31/202 ,  H01L31/204 ,  H01L31/206 ,  Y02E10/548 ,  Y02P70/521

摘要： A photovoltaic element comprises a first non-monocrystalline silicon-containing semiconductor layer of a first-conductivity type, a first i-type non-monocrystalline silicon-containing semiconductor layer formed by microwave plasma CVD, a second i-type non-monocrystalline silicon-containing semiconductor layer formed by high-frequency plasma CVD, and a second non-monocrystalline silicon-containing semiconductor layer of a conductivity type opposite to the first-conductivity type, wherein the second semiconductor layer is formed by plasma doping.

摘要翻译： 光电元件包括​​第一导电类型的第一非单晶硅含硅半导体层，通过微波等离子体CVD形成的第一i型非单晶含硅半导体层，第二i型非单晶硅含硅半导体层， 通过高频等离子体CVD形成的含硅半导体层和与第一导电型相反的导电类型的第二非单晶硅含量半导体层，其中通过等离子体掺杂形成第二半导体层。

公开(公告)号：US06413794B1

公开(公告)日：2002-07-02

申请号：US09649599

申请日：2000-08-29

申请人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

发明人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

IPC分类号： H01L2100

CPC分类号： H01L31/206 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

摘要： A method of forming a photovoltaic element according to the present invention comprises at least the steps of depositing a metal layer on a supporting member, depositing a metal oxide layer on the above metal layer, and arranging at least one or more pin structures, each of which is formed by stacking the predetermined n-type, i-type and p-type semiconductor layers, on a substrate formed by stacking on the above supporting member, the above metal layer and the above metal oxide layer in this order, wherein a step of subjecting the supporting member having the metal layer formed thereon to heat treatment is carried out between the two steps of depositing the above metal layer and depositing the above metal oxide layer. Accordingly, the present invention provides a method of forming a photovoltaic element which enables the solution of the problem that defective portions appear in a semiconductor layer because the semiconductor layer, which functions as a photoelectric converting layer, formed on irregularities of a metal layer surface cannot fully cover the metal layer due to the existence of projecting portions or portions with great height difference on a part of the irregularities.

摘要翻译： 根据本发明的形成光电元件的方法至少包括在支撑构件上沉积金属层的步骤，在上述金属层上沉积金属氧化物层，并且布置至少一个或多个引脚结构 其通过将预定的n型，i型和p型半导体层堆叠在依次堆叠在上述支撑构件，上述金属层和上述金属氧化物层上形成的衬底上而形成，其中步骤 在沉积上述金属层并沉积上述金属氧化物层的两个步骤之间进行使其上形成有金属层的支撑构件进行热处理。 因此，本发明提供一种形成光电元件的方法，由于在金属层表面的不规则处形成的作为光电转换层的半导体层不能形成，所以能够解决缺陷部分出现在半导体层中的问题 由于在不规则部分上存在突出部分或高度差大的部分，完全覆盖金属层。

公开(公告)号：US08534796B2

公开(公告)日：2013-09-17

申请号：US13303411

申请日：2011-11-23

申请人： Koichi Omata ,  Yoshiyuki Imanaka ,  Hideo Tamura ,  Takaaki Yamaguchi ,  Kousuke Kubo ,  Ryoji Oohashi ,  Yuuji Tamaru

发明人： Koichi Omata ,  Yoshiyuki Imanaka ,  Hideo Tamura ,  Takaaki Yamaguchi ,  Kousuke Kubo ,  Ryoji Oohashi ,  Yuuji Tamaru

IPC分类号： B41J2/15 ,  B41J2/145

CPC分类号： B41J2/0458 ,  B41J2/04541 ,  B41J2/04543 ,  B41J2202/20

摘要： A liquid-discharging recording head includes first and second substrates each having an energy generating element and a supply port, and a support member on which the substrates are arranged. The first substrate is provided on one side in a longitudinal direction of the support member, and the second substrate is provided on an other side in the longitudinal direction of the support member. A driving circuit configured to drive the energy generating element is provided in a larger region between an end of a supply port in the first substrate on the other side in the longitudinal direction and an end of the first substrate on the other side and in a larger region between an end of a supply port in the second substrate on the one side in the longitudinal direction and an end of the second substrate on the one side.

摘要翻译： 排液记录头包括各自具有能量产生元件和供给口的第一和第二基板，以及布置基板的支撑部件。 第一基板设置在支撑构件的长度方向的一侧，第二基板设置在支撑构件的长度方向的另一侧。 配置为驱动能量产生元件的驱动电路设置在较长的区域中，该区域在纵向另一侧的第一基板的供给端口的端部与另一侧的第一基板的端部之间 位于第一基板的长度方向一侧的供给口的端部与一侧的第二基板的端部之间。

公开(公告)号：US08378377B2

公开(公告)日：2013-02-19

申请号：US12885721

申请日：2010-09-20

申请人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

发明人： Yoshiaki Sugizaki ,  Hideki Shibata ,  Akihiro Kojima ,  Masayuki Ishikawa ,  Hideo Tamura ,  Tetsuro Komatsu

IPC分类号： H01L33/00

CPC分类号： H01L33/647 ,  H01L27/153 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0066

摘要： According to one embodiment, a light emitting device includes a light emitting chip, an external terminal made of a metal material, and a circuit board. The light emitting chip is mounted on the circuit board via the external terminal. The light emitting chip includes a semiconductor layer, a first electrode, a second electrode, an insulating layer, a first interconnection layer, a second interconnection layer, a first metal pillar, a second metal pillar and a resin layer. The circuit board includes an interconnection bonded to the first metal pillar and the second metal pillar via the external terminal, and a heat radiation material provided on an opposite side of the interconnection and connected to the interconnection.

摘要翻译： 根据一个实施例，发光器件包括发光芯片，由金属材料制成的外部端子和电路板。 发光芯片通过外部端子安装在电路板上。 发光芯片包括半导体层，第一电极，第二电极，绝缘层，第一互连层，第二互连层，第一金属柱，第二金属柱和树脂层。 电路板包括经由外部端子与第一金属柱和第二金属柱接合的互连以及设置在互连的相对侧并连接到互连的散热材料。

公开(公告)号：US08377726B2

公开(公告)日：2013-02-19

申请号：US12832275

申请日：2010-07-08

申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Hideki Shibata ,  Hideo Tamura ,  Tetsuro Komatsu ,  Masayuki Ishikawa

IPC分类号： H01L21/66

CPC分类号： H01L33/0079 ,  H01L33/38 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/502 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/16

摘要： According to one embodiment, a light emitting device includes a stacked body, a p-side and n-side electrodes, an insulating film, a p-side extraction electrode, an n-side extraction electrode, a resin layer and a phosphor layer. The stacked body has a first and a second surface opposite to each other and includes a light emitting layer. A p-side and an n-side electrode are provided on the second surface. An insulating film has openings to which the p-side and n-side electrodes are exposed. A p-side extraction electrode includes a p-side seed metal and a p-side metal wiring layer. An n-side extraction electrode includes an n-side seed metal and an n-side metal wiring layer. A resin layer is filled around the p-side and n-side extraction electrodes, and a phosphor layer is provided on a side of the first surface. Emission light from the light emitting layer is emitted through the first surface.

摘要翻译： 根据一个实施例，发光器件包括层叠体，p侧和n侧电极，绝缘膜，p侧引出电极，n侧引出电极，树脂层和荧光体层。 层叠体具有彼此相对的第一和第二表面，并且包括发光层。 p侧和n侧电极设置在第二表面上。 绝缘膜具有露出p侧和n侧电极的开口。 p侧引出电极包括p侧金属和p侧金属配线层。 n侧引出电极包括n侧籽晶和n侧金属布线层。 在p侧和n侧引出电极周围填充有树脂层，在第一面的一侧设置有荧光体层。 来自发光层的发射光通过第一表面发射。