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725 条记录 (耗时 0.023 秒)

    Wireless communication apparatus
    5.
    发明授权
    Wireless communication apparatus 有权
    无线通信装置

    公开(公告)号：US07184491B2

    公开(公告)日：2007-02-27

    申请号：US10655045

    申请日：2003-09-05

    申请人： May Suzuki ,  Satoshi Tanaka ,  Taizo Yamawaki ,  Tomonori Tanoue

    发明人： May Suzuki ,  Satoshi Tanaka ,  Taizo Yamawaki ,  Tomonori Tanoue

    IPC分类号： H04K1/02

    CPC分类号： H03F3/24 ,  H03F1/02 ,  H03F1/0205 ,  H03F1/0227 ,  H03F1/32 ,  H03F2200/102 ,  H03F2200/324 ,  H03F2200/451 ,  H03F2200/504 ,  H03F2200/66 ,  H04B2001/045 ,  H04L27/20

    摘要： A linear system and an EER system are used in combination such that the EER system can also be used in a cellular phone with a wide output dynamic range. In the EER system, linear control of an amplifier becomes difficult in a low output range. Thus, use of the EER system is limited to a high output range, and the linear system is used in the low output range as in the past. A power efficiency is improved while requirements of linearity are satisfied by this structure. An effective circuit structure is proposed for a switching control system for two systems. In addition, an up-converter is constituted in combination with a step-down element with high responsiveness, whereby a power supply voltage control circuit for the EER system with a wide control range and high responsiveness is provided.

    摘要翻译： 线性系统和EER系统组合使用，使得EER系统也可以用在具有宽输出动态范围的蜂窝电话中。 在EER系统中，放大器的线性控制在低输出范围内变得困难。 因此，EER系统的使用被限制在高输出范围，并且线性系统如以往那样在低输出范围内使用。 通过这种结构满足线性要求，提高了功率效率。 提出了一种用于两个系统的开关控制系统的有效电路结构。 此外，上变频器与具有高响应性的降压元件组合构成，由此提供了具有宽控制范围和高响应性的EER系统的电源电压控制电路。

    Radio frequency (RF) power amplifier and RF power amplifier apparatus
    6.
    发明授权
    Radio frequency (RF) power amplifier and RF power amplifier apparatus 有权
    射频（RF）功率放大器和RF功率放大器装置

    公开(公告)号：US07876156B2

    公开(公告)日：2011-01-25

    申请号：US12412728

    申请日：2009-03-27

    申请人： Satoshi Tanaka ,  Tomonori Tanoue

    发明人： Satoshi Tanaka ,  Tomonori Tanoue

    IPC分类号： H03G3/30

    CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F3/245 ,  H03F2200/393 ,  H03F2200/451

    摘要： An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

    摘要翻译： RF功率放大器具有产生RF发射输出信号的最终级放大器级，检测RF发射输出电平的信号检测器，第一检测器，第二检测器和控制电路。 最后一级放大器级包括晶体管和负载元件，并执行饱和型非线性放大和非饱和型线性放大。 第一检测器和控制电路保持RF发射输出信号相对于饱和型非线性放大在天线处的负载变化大致恒定。 第二检测器和控制电路在非饱和型线性放大时相对于天线的过载状态减小了最终级晶体管的输出电压的增加。

    Radio frequency (RF) power amplifier and RF power amplifier apparatus
    7.
    发明授权
    Radio frequency (RF) power amplifier and RF power amplifier apparatus 有权

    公开(公告)号：US08076974B2

    公开(公告)日：2011-12-13

    申请号：US12980627

    申请日：2010-12-29

    申请人： Satoshi Tanaka ,  Tomonori Tanoue

    发明人： Satoshi Tanaka ,  Tomonori Tanoue

    IPC分类号： H03G3/30

    CPC分类号： H03F3/19 ,  H03F1/0261 ,  H03F3/245 ,  H03F2200/393 ,  H03F2200/451

    摘要： An RF power amplifier has a final-stage amplifier stage which generates an RF transmit output signal, a signal detector which detects an RF transmit output level, a first detector, a second detector and a control circuit. The final-stage amplifier stage includes a transistor and a load element and performs saturation type nonlinear amplification and non-saturation type linear amplification. The first detector and the control circuit maintain the RF transmit output signal approximately constant with respect to a variation in load at an antenna at the saturation type nonlinear amplification. The second detector and the control circuit reduce an increase in the output voltage of the final stage transistor with respect to an overload state of the antenna at the non-saturation type linear amplification.

    Current mirror circuit employing depletion mode FETs
    8.
    发明授权
    Current mirror circuit employing depletion mode FETs 失效
    采用耗尽型FET的电流镜电路

    公开(公告)号：US5166553A

    公开(公告)日：1992-11-24

    申请号：US364461

    申请日：1989-06-12

    申请人： Nobuo Kotera ,  Kiichi Yamashita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Yasushi Hatta ,  Minoru Nagata

    发明人： Nobuo Kotera ,  Kiichi Yamashita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Yasushi Hatta ,  Minoru Nagata

    IPC分类号： G05F3/24 ,  G05F3/26 ,  H03F3/34 ,  H03F3/343 ,  H03F3/347 ,  H03K17/14

    CPC分类号： H03K17/145 ,  G05F3/262

    摘要： A semiconductor circuit including first and second FET's for delivering an output signal without being affected by a change in threshold voltage of the FET's is disclosed. According to one practical form of the semiconductor circuit, the drain-source current path of an additional FET whose gate and source are shorted to each other, is connected in parallel to the drain-source current path of the first FET whose gate and drain are shorted to each other, to make the voltage-current characteristic of the second FET agree with that of the parallel combination of the first and additional FET's. According to another practical form of the semiconductor circuit, a voltage dividing circuit is connected in parallel to the drain-source current path of the first FET, and a divided output voltage from the voltage dividing circuit is applied between the gate and source of each of the first and second FET's.

    摘要翻译： 公开了一种包括用于传递输出信号而不受FET的阈值电压变化影响的第一和第二FET的半导体电路。 根据半导体电路的一种实际形式，其栅极和源极彼此短路的附加FET的漏极 - 源极电流路径并联连接到栅极和漏极的第一FET的漏极 - 源极电流路径 使第二FET的电压 - 电流特性与第一和另外的FET的并联组合一致。 根据半导体电路的另一种实际形式，分压电路并联连接到第一FET的漏极 - 源极电流路径，并且来自分压电路的分压输出电压施加在每个的栅极和源极之间 第一和第二FET。

    Semiconductor circuit
    9.
    发明授权
    Semiconductor circuit 失效
    半导体电路

    公开(公告)号：US4847550A

    公开(公告)日：1989-07-11

    申请号：US143802

    申请日：1988-01-14

    申请人： Satoshi Tanaka ,  Hirotoshi Tanaka ,  Taizo Kinoshita ,  Nobuo Kotera ,  Minoru Nagata ,  Kiichi Yamashita ,  Tomoyuki Watanabe

    发明人： Satoshi Tanaka ,  Hirotoshi Tanaka ,  Taizo Kinoshita ,  Nobuo Kotera ,  Minoru Nagata ,  Kiichi Yamashita ,  Tomoyuki Watanabe

    IPC分类号： G05F3/24

    CPC分类号： G05F3/245 ,  G05F3/247

    摘要： A constant voltage circuit according to this invention comprises first means attenuating or dividing fluctuating voltage and an amplifying FET, to the gate of which the output attenuated or divided by the first means is applied and whose drain is connected with the fluctuating voltage through load means. The attenuation ratio or division ratio of the first means, the mutual conductance of the amplifying FET and the impedance of the load means are so set that the voltage drop across the load means cancels the fluctuating amount of the fluctuating voltage. Consequently an output voltage, which is maintained substantially constant, is obtained at the drain of the amplifying FET, independently of fluctuations in the fluctuating voltage, and thus a constant voltage circuit can be obtained. A constant current circuit according to this invention utilizes the constant voltage circuit described above. The output voltage of the constant voltage circuit is supplied to the gate of the constant current FET. Consequently a current, which is maintained substantially constant, flows through the drain-source path of this constant current FET and thus a constant current circuit can be obtained.

    Threshold voltage fluctuation compensation circuit for FETS
    10.
    发明授权
    Threshold voltage fluctuation compensation circuit for FETS 失效
    FETS的阈值电压波动补偿电路

    公开(公告)号：US4857769A

    公开(公告)日：1989-08-15

    申请号：US143385

    申请日：1988-01-13

    申请人： Nobuo Kotera ,  Kiichi Yamashita ,  Taizo Kinoshita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Minoru Nagata

    发明人： Nobuo Kotera ,  Kiichi Yamashita ,  Taizo Kinoshita ,  Hirotoshi Tanaka ,  Satoshi Tanaka ,  Minoru Nagata

    IPC分类号： H03K19/003

    CPC分类号： H03K19/00384

    摘要： This invention relates to a threshold voltage detection circuit for detecting the threshold voltage of field effect transistors (FETs) and to a semiconductor circuit capable of a stable operation irrespective of the fluctuation of the threshold voltage by utilizing this threshold voltage detection circuit. The source-drain path of first FET is connected in series with that of second FET having substantially the same threshold voltage as that of the first FET and the conductances of these first and second FETs are set to a predetermined ratio to generate a voltage drop associated with the threshold voltage in the first FET. This voltage drop can be used for detecting the threshold voltage and for level-shifting. The output of the series connection of the first and second FETs is applied to the gate of a constant current FET having the same threshold voltage as that of the first and second FETs and the drain current of the constant current FET can thus be set irrespective of the fluctuation of the threshold voltage.

    摘要翻译： 本发明涉及一种阈值电压检测电路，用于通过利用该阈值电压检测电路来检测场效应晶体管（FET）的阈值电压和能够稳定工作的半导体电路，而与阈值电压的波动无关。 第一FET的源极 - 漏极路径与具有与第一FET基本相同的阈值电压的第二FET的源极 - 漏极路径串联连接，并且将这些第一和第二FET的电导设置为预定的比率以产生相关的电压降 与第一FET中的阈值电压。 该电压降可用于检测阈值电压和电平转换。 第一和第二FET的串联连接的输出被施加到具有与第一和第二FET相同的阈值电压的恒流FET的栅极，因此可以设定恒定电流FET的漏极电流，而不管 阈值电压的波动。