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    Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof
    1.
    发明授权
    Semiconductor device equipped with a heat-fusible thin film resistor and production method thereof 失效
    配有热熔薄膜电阻的半导体装置及其制造方法

    公开(公告)号：US5625218A

    公开(公告)日：1997-04-29

    申请号：US491543

    申请日：1995-06-16

    申请人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

    发明人： Hideya Yamadera ,  Takeshi Ohwaki ,  Yasunori Taga ,  Makio Iida ,  Makoto Ohkawa ,  Hirofumi Abe ,  Yoshihiko Isobe

    IPC分类号： H01L23/525 ,  H01L27/10 ,  H01L29/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002

    摘要： A fuse fusible type semiconductor device capable of reducing energy required for fusing and a production method of the semiconductor device. In a semiconductor device equipped with a heat-fusible thin film resistor, the thin film resistor formed on a substrate 1 through an insulating film 2 is made of chromium, silicon and tungsten, and films 7 and 8 of a insulator including silicon laminated on the upper surface of the fusing surface, aluminum films 5 are disposed on both sides of the fusing surface and a barrier film 4. This semiconductor device is produced by a lamination step of sequentially forming a first insulating film 2, a thin film resistor 3, a barrier film 4 and an aluminum film 5 on a substrate 1 for reducing drastically fusing energy, an etching step of removing the barrier film 4 and the aluminum film 5 from the fusing region 31 of the thin film resistor 3, and an oxide film formation step of depositing the insulator including silicon films 7 and 8.

    摘要翻译： 一种能够降低熔融所需的能量的熔断器熔断型半导体器件和半导体器件的制造方法。 在配备有热熔薄膜电阻器的半导体装置中，通过绝缘膜2形成在基板1上的薄膜电阻由铬，硅和钨制成，并且包含硅的绝缘体的膜7和8层压在 定影表面的上表面，铝膜5设置在定影表面的两侧和阻挡膜4上。该半导体器件通过层叠步骤制造，顺序形成第一绝缘膜2，薄膜电阻3， 阻挡膜4和铝膜5，用于降低显着熔化能的蚀刻步骤，从薄膜电阻器3的熔融区域31去除阻挡膜4和铝膜5的蚀刻步骤以及氧化膜形成步骤 沉积包括硅膜7和8的绝缘体。

    Ceramic substrate having a metallic layer thereon and a process for manufacturing the same
    3.
    发明授权
    Ceramic substrate having a metallic layer thereon and a process for manufacturing the same 失效
    其上具有金属层的陶瓷基板及其制造方法

    公开(公告)号：US5008149A

    公开(公告)日：1991-04-16

    申请号：US274481

    申请日：1988-11-22

    申请人： Yasunori Taga ,  Hideya Yamadera ,  Keiji Aoki ,  Tadashi Hattori

    发明人： Yasunori Taga ,  Hideya Yamadera ,  Keiji Aoki ,  Tadashi Hattori

    IPC分类号： C23C14/02 ,  B32B15/04 ,  C04B41/52 ,  C04B41/88 ,  C04B41/89 ,  C04B41/90 ,  C23C14/06 ,  C23C14/16 ,  C23C14/58

    CPC分类号： C04B41/009 ,  B32B15/04 ,  C04B41/52 ,  C04B41/89 ,  Y10T428/265 ,  Y10T428/31678

    摘要： A ceramic substrate and a metallic layer formed thereon are bonded closely by means of a bonding layer formed between the ceramic substrate and the metallic layer. The ceramic substrate comprises either alumina or a ceramic containing alumina, and the metallic layer comprises either molybdenum (Mo) or an alloy composed of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb). The bonding layer comprises composite oxides of aluminum and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) and formed by either a process of (1) forming an intermediate layer comprising at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) between the ceramic substrate and the metallic layer, and subjecting the laminated substance to a heat treatment to a cause a reaction between alumina and the intermediate layer; or (2) forming an alloy layer comprising an alloy of molybdenum (Mo) and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) directly on the ceramic substrate, and subjecting the laminated substance to a heat treatment to cause a reaction between alumina and at least one of titanium (Ti), zirconium (Zr) and niobium (Nb) contained in the alloy layer.

    摘要翻译： 陶瓷基板和形成在其上的金属层通过形成在陶瓷基板和金属层之间的接合层紧密地接合。 陶瓷基板包括氧化铝或含有氧化铝的陶瓷，金属层包括钼（Mo）或由钼（Mo）和钛（Ti），锆（Zr）和铌（Nb）中的至少一种组成的合金， 。 所述接合层包括铝的复合氧化物和钛（Ti），锆（Zr）和铌（Nb）中的至少一种，并且通过以下工艺形成：（1）形成包含钛（Ti） ，锆（Zr）和铌（Nb）在陶瓷基板和金属层之间，并对叠层物进行热处理以引起氧化铝和中间层之间的反应; 或（2）直接在陶瓷基板上形成包含钼（Mo）和钛（Ti），锆（Zr）和铌（Nb）中的至少一种的合金的合金层，并对层叠物进行热处理 引起氧化铝与合金层中所含的钛（Ti），锆（Zr）和铌（Nb）中的至少一种的反应。

    Dielectric film
    4.
    发明授权
    Dielectric film 失效
    电介质膜

    公开(公告)号：US5225286A

    公开(公告)日：1993-07-06

    申请号：US897818

    申请日：1992-06-12

    申请人： Hisayoshi Fujikawa ,  Yasunori Taga ,  Makio Iida

    发明人： Hisayoshi Fujikawa ,  Yasunori Taga ,  Makio Iida

    IPC分类号： C01G35/00 ,  H01B3/00 ,  H01B3/12 ,  H01G4/12 ,  H01L21/02 ,  H01L21/822 ,  H01L27/04 ,  H01L29/51

    CPC分类号： H01L29/513 ,  H01L28/40 ,  H01L29/517 ,  Y10S428/901 ,  Y10S428/917 ,  Y10T428/265

    摘要： A tantalum oxide dielectric film includes tantalum oxide (Ta.sub.2 O.sub.5) as a major component, and at least one oxide selected from the group consisting of yttrium oxide (Y.sub.2 O.sub.3), tungsten oxide (WO.sub.3) and niobium oxide (Nb.sub.2 O.sub.5). This dielectric film exhibits a remarkably improved dielectric constant and insulation property because it is a composite oxide film in which Ta.sub.2 O.sub.5 is compounded with Y.sub.2 O.sub.3, WO.sub.3 or Nb.sub.2 O.sub.5. For example, when the dielectric film is used as a capacitor film, the capacitor film exhibits a figure of merit, i.e., a product of a dielectric constant and an insulation property, approximately twice the silicon oxide (SiO.sub.2) film which is used widely for the purpose at present.

    摘要翻译： 钽氧化物电介质膜包括作为主要成分的氧化钽（Ta 2 O 5）和选自氧化钇（Y 2 O 3），氧化钨（WO 3）和氧化铌（Nb 2 O 5）的至少一种氧化物。 该介电膜由于是与Y 2 O 3，WO 3或Nb 2 O 5复合而成的复合氧化物膜，所以介电常数和绝缘性能显着提高。 例如，当将电介质膜用作电容器膜时，电容器膜呈现出一个品质因数，即介电常数和绝缘性的乘积，大约是二氧化硅（SiO 2）膜的两倍，其广泛用于 目前的目的

    Photocatalyst
    7.
    发明授权
    Photocatalyst 有权
    光催化剂

    公开(公告)号：US06743749B2

    公开(公告)日：2004-06-01

    申请号：US10181918

    申请日：2002-07-26

    申请人： Takeshi Morikawa ,  Takahiro Shiga ,  Ryoji Asahi ,  Takeshi Ohwaki ,  Yasunori Taga

    发明人： Takeshi Morikawa ,  Takahiro Shiga ,  Ryoji Asahi ,  Takeshi Ohwaki ,  Yasunori Taga

    IPC分类号： B01J2300

    CPC分类号： B01J21/063 ,  B01J21/06 ,  B01J23/26 ,  B01J27/24 ,  B01J35/002 ,  B01J35/004 ,  B01J37/347

    摘要： A Ti—O—N film is formed on an SiO2 substrate by sputtering. For example, TiO2 is used as a target and nitrogen gas is introduced into the atmosphere. Crystallization is carried out by a post-sputtering heat treatment. Then a charge separation material such as Pt is supported on the Ti—O—N film. With the fabricated TiO2 crystals, the Ti—O—N film containing nitrogen exhibits a good catalytic reaction by using visible light as acting light. Since the charge separation material captures electrons or positive holes, recombination of electrons and positive holes is effectively prevented, and consequently more efficient photocatalytic reaction is performed. It is preferable to form a photocatalyst material film (Ti—Cr—O—N film) by sputtering the SiO2 substrate by use of TiO2 and Cr as the target in a nitrogen atmosphere. Crystallization is performed by a post-sputtering heat treatment.

    摘要翻译： 通过溅射在SiO 2衬底上形成Ti-O-N膜。 例如，将TiO 2用作靶，将氮气引入大气中。 通过后溅射热处理进行结晶。 然后在Ti-O-N膜上负载诸如Pt的电荷分离材料。 通过制备的TiO 2晶体，通过使用可见光作为光，含氮的Ti-O-N膜表现出良好的催化反应。 由于电荷分离材料捕获电子或正空穴，因此有效地防止电子和空穴的复合，因此进行更有效的光催化反应。 优选通过在氮气气氛中通过使用TiO 2和Cr作为靶来溅射SiO 2基板来形成光催化剂材料膜（Ti-Cr-O-N膜）。 通过后溅射热处理进行结晶。

    Ultra-high density memory device
    8.
    发明授权
    Ultra-high density memory device 失效
    超高密度存储器件

    公开(公告)号：US5940314A

    公开(公告)日：1999-08-17

    申请号：US9304

    申请日：1998-01-20

    申请人： Motofumi Suzuki ,  Takeshi Ohwaki ,  Yasunori Taga ,  Hiroshi Tadano ,  Testu Kachi ,  Yuichi Tanaka ,  Kazuyoshi Tomita

    发明人： Motofumi Suzuki ,  Takeshi Ohwaki ,  Yasunori Taga ,  Hiroshi Tadano ,  Testu Kachi ,  Yuichi Tanaka ,  Kazuyoshi Tomita

    IPC分类号： G11B11/00 ,  G11B5/00 ,  G11B5/74 ,  G11B9/00 ,  G11B9/14 ,  G11B13/04 ,  H01L43/08 ,  G11C11/42

    CPC分类号： B82Y10/00 ,  G11B5/00 ,  G11B5/74 ,  G11B9/14 ,  G11B9/1409 ,  G11B13/04 ,  Y10S977/947

    摘要： A ultra-high density memory device utilizing a photoinductive ferromagnetic thin film. A photoinductive ferromagnetic thin film is formed on a GaAs substrate, and a tip is arranged so as to face the photoinductive ferromagnetic thin film. The GaAs substrate is disposed on an xyz scanner, and the three-dimensional positional relationship between the GaAs substrate and the tip is changed by the xyz scanner. Blue light is radiated onto the thin film in order to make the magnetization orientation of molecules uniform. Through application of a relatively high voltage, a relatively large current is caused to flow between the tip and the substrate, so that randomization of the magnetization orientation of molecules of the photoinductive ferromagnetic thin film; i.e., writing operation is carried out. Also, through uniform radiation of circular polarized light onto the GaAs substrate and application of a relatively low voltage, tunneling current is caused to flow between the tip and the substrate, which tunneling current changes in accordance with the magnetization orientation of molecules of the photoinductive ferromagnetic thin film. Through detection of the tunneling current, the magnetization orientation of molecules of the photoinductive ferromagnetic thin film can be detected.

    摘要翻译： 一种利用感光铁磁性薄膜的超高密度存储器件。 在GaAs衬底上形成感光铁磁性薄膜，并且将顶端配置为面对感光性铁磁性薄膜。 GaAs衬底设置在xyz扫描器上，并且通过xyz扫描器改变GaAs衬底和尖端之间的三维位置关系。 将蓝光照射到薄膜上，以使分子的磁化取向均匀。 通过施加相当高的电压，使得相对较大的电流在尖端和衬底之间流动，从而使感光铁磁性薄膜的分子的磁化取向随机化; 即执行写入操作。 此外，通过将均匀的圆偏振光辐射到GaAs衬底上并施加相对低的电压，引起隧道电流在尖端和衬底之间流动，该隧道电流根据感光铁磁体的分子的磁化方向而改变 薄膜。 通过检测隧道电流，可以检测感光铁磁性薄膜的分子的磁化取向。

    Dental bleaching agent kit and the method for bleaching teeth
    9.
    发明授权
    Dental bleaching agent kit and the method for bleaching teeth 有权
    牙齿漂白剂套件和漂白牙齿的方法

    公开(公告)号：US07250155B2

    公开(公告)日：2007-07-31

    申请号：US10791783

    申请日：2004-03-04

    申请人： Shin Yamaguchi ,  Toshihiro Sekiguchi ,  Keisuke Ikushima ,  Shoji Akahane ,  Koyu Aoki ,  Takeshi Morikawa ,  Takeshi Ohwaki ,  Yasunori Taga

    发明人： Shin Yamaguchi ,  Toshihiro Sekiguchi ,  Keisuke Ikushima ,  Shoji Akahane ,  Koyu Aoki ,  Takeshi Morikawa ,  Takeshi Ohwaki ,  Yasunori Taga

    IPC分类号： A61K8/00 ,  B01J27/24 ,  B01J21/06

    CPC分类号： A61K8/29 ,  A61K8/22 ,  A61Q11/00

    摘要： To eliminate a defect in conventional dental bleaching agent, that light for activating titanium oxide hardly reaches down to the titanium oxide at the teeth surface to be bleached, a dental bleaching agent set consists of two components of which the first component is attached to teeth surface and irradiation of light is followed after the second component is contacted on the teeth surface, the first component consisting of an organic solvent, containing at least one of a titanium oxide, a nitrogen doped titanium oxide, and a titanium oxinitride having photocatalytic activities, and preferably one or more of a metal oxide, a metal salt, and a metal powder, a thickener and water, the second component consisting of a compound that produces hydrogen peroxide in water, a thickener and a carrier.

    摘要翻译： 为了消除常规牙齿漂白剂中的缺陷，用于活化氧化钛的光在待漂白的牙齿表面几乎不能到达氧化钛，牙齿漂白剂组由两个组分组成，其中第一组分附着到牙齿表面 并且在第二部件在牙齿表面接触之后遵循光照射，第一部件由含有氧化钛，氮掺杂的氧化钛和具有光催化活性的氮氧化钛中的至少一种的有机溶剂组成，以及 优选金属氧化物，金属盐和金属粉末，增稠剂和水中的一种或多种，​​第二组分由在水中产生过氧化氢的化合物，增稠剂和载体组成。

    Method for bleaching teeth and bleaching agent for teeth
    10.
    发明申请
    Method for bleaching teeth and bleaching agent for teeth 有权
    用于牙齿漂白牙齿和漂白剂的方法

    公开(公告)号：US20060222604A1

    公开(公告)日：2006-10-05

    申请号：US11434871

    申请日：2006-05-17

    申请人： Shin Yamaguchi ,  Toshihiro Sekiguchi ,  Keisuke Ikushima ,  Shoji Akahane ,  Koyu Aoki ,  Takeshi Morikawa ,  Takeshi Ohwaki ,  Yasunori Taga

    发明人： Shin Yamaguchi ,  Toshihiro Sekiguchi ,  Keisuke Ikushima ,  Shoji Akahane ,  Koyu Aoki ,  Takeshi Morikawa ,  Takeshi Ohwaki ,  Yasunori Taga

    IPC分类号： A61K8/29

    CPC分类号： A61K8/29 ,  A61K2800/81 ,  A61Q11/00

    摘要： A method for bleaching teeth comprises steps of applying a solution containing nitrogen-deeped titanium oxide powder on a surface of teeth, and irradiating the applied part with light to bleach the teeth based on a photocatalytic action thus produced, and a bleaching agent for teeth suitable for carrying out the method comprises a solution containing nitrogen deeped titanium oxide powder, in which the nitrogen-deeped titanium oxide is preferably a photocatalytic substance having a Ti—O—N structure having a titanium oxide crystalline lattice containing nitrogen and exhibiting a photocatalytic action in a visible light region, the bleaching agent contains preferably 0.01 to 5% by weight of the nitrogen-deeped titanium oxide powder, the nitrogen-deeped titanium oxide powder has a specific surface area of from 10 to 500 m2/g, the solution contains water and/or an alcohol as a solvent, and the bleaching agent further contains preferably 0.5 to 20% by weight of a thickener, 1 to 20% by weight of hydrogen peroxide, and 2 to, 45% by weight of urea peroxide.

    摘要翻译： 漂白牙齿的方法包括以下步骤：将含氮深二氧化钛粉末的溶液涂在牙齿表面上，并根据所产生的光催化作用照射所施用的部分以漂白牙齿，并且适合用于牙齿的漂白剂 用于实施该方法的方法包括含氮深氧化钛粉末的溶液，其中氮 - 深二氧化钛优选是具有Ti-ON结构的光催化物质，其具有含氮的氧化钛晶格并且在可见光中显示出光催化作用 亮区，漂白剂含氮优选为0.01〜5重量％，氮深二氧化钛粉末的比表面积为10〜500μm2 / g，溶液含有水和/或醇作为溶剂，漂白剂还优选含有0.5〜20重量％的增稠剂，1〜2 0重量％的过氧化氢和2〜45重量％的过氧化脲。