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    Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material Solution
    4.
    发明申请
    Raw Material Solution for Metal Organic Chemical Vapor Deposition Method and Method for Manufacturing Composite Oxide Film Containing Hf-Si Using the Raw Material Solution 审中-公开
    金属有机化学气相沉积方法原料溶液及使用原料溶液制备含Hf-Si复合氧化物膜的方法

    公开(公告)号：US20080299312A1

    公开(公告)日：2008-12-04

    申请号：US11574547

    申请日：2005-09-02

    申请人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

    发明人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

    IPC分类号： C23C16/06 ,  C09D5/00

    CPC分类号： H01L21/02148 ,  C23C16/401 ,  H01L21/02271 ,  H01L21/02337 ,  H01L21/31645

    摘要： There is provided a raw material solution for MOCVD method having a high film forming rate, and a method for manufacturing composite oxide film containing Hf-Si using the raw material solution. There is also provided a method for manufacturing composite oxide film containing Hf-Si by using the raw material solution for MOCVD method providing an excellent adhesivity with a substrate.The raw material solution for MOCVD method of the invention includes an organic Si compound represented by the formula (R1R2N)nSiH(4-n) which is mixed in a predetermined ratio. A mixing ratio of the organic Si compound and the organic Hf compound is within the range of 0.001 to 0.5 wt % in a weight ratio (organic Hf compound/organic Si compound). The raw material solution for MOCVD method of the invention is prepared by mixing the compounds in a ratio within the above-mentioned range, dissolving the organic Hf compound in the organic Si compound, and heating this solution at a temperature of 20 to 100 ° C.

    摘要翻译： 提供了具有高成膜速率的MOCVD法的原料溶液，以及使用原料溶液制造含有Hf-Si的复合氧化物膜的方法。 还提供了一种通过使用与基板提供优异的粘附性的用于MOCVD方法的原料溶液来制造包含Hf-Si的复合氧化物膜的方法。 本发明的MOCVD法的原料溶液包含以规定比例混合的由式（R1R2N）nSiH（4-n）表示的有机硅化合物。 有机Si化合物和有机Hf化合物的混合比例在有机Hf化合物/有机Si化合物的重量比为0.001〜0.5重量％的范围内。 本发明的MOCVD法的原料溶液通过以上述范围的比例混合化合物，将有机Hf化合物溶解在有机Si化合物中并在20〜100℃的温度下加热而制备 。

    Capacitor Film Forming Material
    5.
    发明申请
    Capacitor Film Forming Material 审中-公开
    电容成膜材料

    公开(公告)号：US20070231251A1

    公开(公告)日：2007-10-04

    申请号：US11570092

    申请日：2005-06-10

    申请人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

    发明人： Atsushi Itsuki ,  Akio Yanagisawa ,  Nobuyuki Soyama

    IPC分类号： H01L21/316

    CPC分类号： C23C16/405 ,  H01L21/02181 ,  H01L21/02271 ,  H01L21/3141 ,  H01L21/3145 ,  H01L21/31645 ,  H01L28/55

    摘要： Provided is a novel capacitor film forming material having a high growth rate and excellent step coverage, and obtained is a hafnium-containing film having excellent characteristics as a capacitor film with a high dielectric constant and a low reactivity with Si. A capacitor film forming material comprising a hafnium oxide film provided in a semiconductor memory device, is a capacitor film forming material in which the forming material comprises the organic hafnium compound of Hf(R1R2N)4 or Hf(OR3)4-n(R4)n and the content of Nb as an inevitable compound is 1 ppm or less.

    摘要翻译： 提供一种具有高生长速度和优异的台阶覆盖率的新颖的电容器成膜材料，并且获得了作为具有高介电常数和与Si的低反应性的电容器膜的优异特性的含铪膜。 设置在半导体存储器件中的包含氧化铪膜的电容器膜形成材料是一种电容器膜形成材料，其中所述形成材料包含Hf（R 1 O 2 R 2）的有机铪化合物 或（Ⅳ）N N N N N N N N SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB SUB > n ，作为不可避免的化合物的Nb的含量为1ppm以下。

    Raw Material Solution for Metal Organic Chemical Vapor Deposition and Composite Oxide-Based Dielectric Thin Film Produced by Using the Raw Material
    6.
    发明申请
    Raw Material Solution for Metal Organic Chemical Vapor Deposition and Composite Oxide-Based Dielectric Thin Film Produced by Using the Raw Material 审中-公开
    用原料生产的金属有机化学气相沉积和复合氧化物基介质薄膜原料溶液

    公开(公告)号：US20080072792A1

    公开(公告)日：2008-03-27

    申请号：US11570120

    申请日：2005-06-10

    申请人： Akio Yanagisawa ,  Atsushi Itsuki ,  Nobuyuki Soyama

    发明人： Akio Yanagisawa ,  Atsushi Itsuki ,  Nobuyuki Soyama

    IPC分类号： C09D199/00

    CPC分类号： H01L21/02271 ,  C23C16/045 ,  C23C16/409 ,  H01L21/02197 ,  H01L21/31691

    摘要： A raw material solution for metal organic chemical vapor deposition having good film forming properties and excellent step coverage, and a composite oxide-based dielectric thin film produced by using the raw material, are provided. An improvement is made to the raw material solution for metal organic chemical vapor deposition having one or two or more organometallic compounds dissolved in an organic solvent, and the feature of the constitution lies in that the organic solvent is 1,3-dioxolane, or the organic solvent is a solvent mixture formed by mixing a first solvent consisting of 1,3-dioxolane, and a second solvent comprising one or two or more species selected from the group consisting of alcohols, alkanes, esters, aromatics, alkyl ethers and ketones, which is to be mixed with the 1,3-dioxolane.

    摘要翻译： 提供了具有良好的成膜性能和优异的台阶覆盖率的金属有机化学气相沉积原料溶液，以及使用该原料生产的复合氧化物类介电薄膜。 对具有溶解在有机溶剂中的一种或两种以上有机金属化合物的金属有机化学气相沉积原料溶液进行了改进，其特征在于有机溶剂为1,3-二氧戊环，或 有机溶剂是通过混合由1,3-二氧戊环组成的第一溶剂和包含一种或两种以上选自醇，烷烃，酯，芳族化合物，烷基醚和酮的物质的第二溶剂形成的溶剂混合物， 其与1,3-二氧戊环混合。