公开(公告)号：US5070510A

公开(公告)日：1991-12-03

申请号：US625169

申请日：1990-12-10

申请人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

发明人： Fumihiro Konushi ,  Hiroshi Nakatu ,  Kazuhiko Inoguchi ,  Toshiyuki Okumura ,  Akinori Seki ,  Haruhisa Takiguchi ,  Chitose Nakanishi ,  Satoshi Sugahara ,  Hiroaki Kudo

IPC分类号： H01L21/20 ,  H01L33/00 ,  H01S5/12 ,  H01S5/20 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S5/40

CPC分类号： H01S5/227 ,  H01L21/02392 ,  H01L21/02395 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02639 ,  H01L33/0062 ,  H01S5/20 ,  H01S5/4031 ,  H01S5/12 ,  H01S5/1228 ,  H01S5/2059 ,  H01S5/2201 ,  H01S5/2213 ,  H01S5/2272 ,  H01S5/2275 ,  H01S5/32391 ,  H01S5/4037

摘要： A semiconductor laser device having a mesa stripe whose side faces are facets of {111} planes is disclosed. In the laser device, a current blocking layer is formed on a semiconductor substrate whose main surface is a (100) plane, and a channel which is oriented along the direction is formed in the current blocking layer. The mesa stripe is formed on the substrate within the channel by a selective growth technique. The mesa stripe has a multilayer structure including an active layer and is covered by a burying layer.

公开(公告)号：US5309472A

公开(公告)日：1994-05-03

申请号：US903785

申请日：1992-06-24

申请人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

发明人： Hiroaki Kudo ,  Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Haruhisa Takiguchi

IPC分类号： H01L33/06 ,  H01L33/20 ,  H01S5/026 ,  H01S5/12 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S5/327 ,  H01S5/34 ,  H01S5/343 ,  H01S3/08

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/1228 ,  H01S5/32 ,  H01L33/20 ,  H01S5/026 ,  H01S5/1231 ,  H01S5/223 ,  H01S5/32308 ,  H01S5/327 ,  H01S5/341 ,  H01S5/3412 ,  H01S5/3428 ,  H01S5/343 ,  H01S5/3432

摘要： A semiconductor device includes a multiple layer structure including a substantially flat active layer, and a first semiconductor layer and a second semiconductor layer adjacent to each other, the semiconductor layers having a corrugation at an interface therebetween; and a generating device which is connected to the multiple layer structure. An electromagnetic field intensity distribution is generated by use of the generating device in a waveguide region including the active layer, and the active layer includes a gain distribution having a distribution pattern corresponding to the corrugation. The multiple layer structure is produced by forming the corrugation on an upper surface of the first semiconductor layer, and forming the rest of the multiple layer structure including the second semiconductor layer and the active layer by using a vapor phase growth method once so as to make the active layer substantially flat. Then, the generating device is formed to be in contact with the multiple layer structure.

摘要翻译： 半导体器件包括包括基本上平坦的有源层的多层结构，以及彼此相邻的第一半导体层和第二半导体层，所述半导体层在其间的界面处具有波纹状; 以及连接到所述多层结构的生成装置。 通过在包括有源层的波导区域中使用发生器件产生电磁场强度分布，并且有源层包括具有对应于波纹的分布图案的增益分布。 通过在第一半导体层的上表面上形成波纹并通过使用气相生长法一次形成包括第二半导体层和活性层的多层结构的其余部分来制造多层结构，以使 活性层基本上平坦。 然后，生成装置形成为与多层结构接触。

公开(公告)号：US5303255A

公开(公告)日：1994-04-12

申请号：US85129

申请日：1993-06-29

申请人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Chitose Nakanishi ,  Satoshi Sugahara

发明人： Hiroaki Kudo ,  Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Chitose Nakanishi ,  Satoshi Sugahara

IPC分类号： H01S5/12 ,  H01S5/20 ,  H01S5/223 ,  H01S3/08 ,  H01S3/19

CPC分类号： H01S5/12 ,  H01S5/1228 ,  H01S5/20 ,  H01S5/2231

摘要： A distributed feedback semiconductor laser device comprising a current blocking structure having a stripe groove, and a diffraction grating formed in the bottom of the stripe groove. The current blocking structure is formed over an active layer for laser oscillation, and it includes an etch stop layer against a groove etching in a lower potion of the current blocking structure. The refractive index distribution in transverse directions inside the stripe groove is controlled by the thickness of the optical guiding layer, enabling oscillation of the fundamental transverse mode.

摘要翻译： 一种分布式反馈半导体激光器件，包括具有条纹槽的电流阻挡结构和形成在条纹槽底部的衍射光栅。 电流阻挡结构形成在用于激光振荡的有源层上，并且其包括抵抗电流阻挡结构的较低部分中的凹槽蚀刻的蚀刻停止层。 条形槽内的横向折射率分布由导光层的厚度控制，使得能够摆动基本横模。

公开(公告)号：US5345460A

公开(公告)日：1994-09-06

申请号：US939901

申请日：1992-09-04

申请人： Haruhisa Takiguchi ,  Seiki Yano ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Toshiyuki Okumura ,  Satoshi Sugahara

发明人： Haruhisa Takiguchi ,  Seiki Yano ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Toshiyuki Okumura ,  Satoshi Sugahara

IPC分类号： H01S5/00 ,  H01S5/16 ,  H01S5/20 ,  H01S3/18 ,  H01S3/08

CPC分类号： H01S5/164 ,  H01S5/2004

摘要： A semiconductor laser device with window regions according to the present invention is provided, in which a double hetero structure including cladding layers and an active layer sandwiched by the cladding layers is formed on a semiconductor substrate, the double hetero structure is buried in burying layers with a bandgap larger than that of the active layer, and the burying layers form window regions situated at both end facets of the double hetero structure, wherein the window regions have a waveguide structure including a plurality of semiconductor layers with different bandgaps.

摘要翻译： 提供了根据本发明的具有窗口区域的半导体激光器件，其中在半导体衬底上形成包括包层和被包覆层夹持的有源层的双异质结构，将该双异质结构埋在具有 具有比有源层大的带隙，并且掩埋层形成位于双异质结构的两端面处的窗口区域，其中窗口区域具有包括具有不同带隙的多个半导体层的波导结构。

公开(公告)号：US5292685A

公开(公告)日：1994-03-08

申请号：US919665

申请日：1992-07-24

申请人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

发明人： Kazuhiko Inoguchi ,  Satoshi Sugahara ,  Mototaka Taneya ,  Hiroaki Kudo ,  Chitose Nakanishi ,  Haruhisa Takiguchi

IPC分类号： H01S5/12 ,  H01S5/223 ,  H01L21/203

CPC分类号： H01S5/12 ,  H01S5/1231 ,  H01S5/2231

摘要： In a first crystal growth step, a first cladding layer, an active layer, and an optical wave-guide layer are sequentially grown on a semiconductor substrate. A diffraction grating is formed at a surface of the optical waveguide layer. In a second crystal growth step, a current block layer is grown on the optical waveguide layer having the diffraction grating. The current block layer is selectively etched to expose the diffraction grating and thus to form a stripe groove. In a third crystal growth step, a second cladding layer is grown on the diffraction grating inside the stripe groove and on the current block layer.

摘要翻译： 在第一晶体生长步骤中，在半导体衬底上依次生长第一包层，有源层和光波导层。 衍射光栅形成在光波导层的表面。 在第二晶体生长步骤中，在具有衍射光栅的光波导层上生长电流阻挡层。 选择性地蚀刻当前阻挡层以暴露衍射光栅，从而形成条纹槽。 在第三晶体生长步骤中，第二包覆层生长在条形槽内部和当前阻挡层上的衍射光栅上。

公开(公告)号：US5361271A

公开(公告)日：1994-11-01

申请号：US120277

申请日：1993-09-13

申请人： Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Mototaka Taneya

发明人： Haruhisa Takiguchi ,  Kazuhiko Inoguchi ,  Hiroaki Kudo ,  Satoshi Sugahara ,  Mototaka Taneya

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2004 ,  H01S5/2205 ,  H01S5/2206 ,  H01S5/223 ,  H01S5/2232 ,  H01S5/32316

摘要： A semiconductor laser of the present invention includes: a semiconductor substrate, a multi-layered structure formed on the semiconductor substrate and a current and light confining section formed on the multi-layered structure, wherein the current and light confining section includes at least two multi-layered current and light confining portions each having a laser beam transmission layer and a laser beam absorption layer formed on the laser beam transmission layer, and at least one stripe groove which spatially separates the at least two current and light confining portions; wherein an equivalent refractive index in the multi-layered current and light confining portions with respect to a laser beam in a fundamental transverse mode is made smaller than that within the stripe groove; wherein the multi-layered structure includes an active layer, and the active layer has a region positioned below the stripe groove of the current and light confining section and regions positioned below a respective one of the multi-layered current and light confining portions; and wherein a optical confinement factor .GAMMA. of the active layer outside the stripe groove with respect to a laser beam in a guide mode is larger than that outside the stripe groove with respect to a laser beam in an anti-guide mode.

摘要翻译： 本发明的半导体激光器包括：半导体衬底，形成在半导体衬底上的多层结构和形成在多层结构上的电流和光限制部分，其中电流和光限制部分包括至少两个多重结构 - 每个具有形成在激光束透射层上的激光束透射层和激光束吸收层的电流和光限制部分以及空间上分离至少两个电流和光限制部分的至少一个条纹槽; 其中相对于基本横向模式的激光束的多层电流和光限制部分中的等效折射率小于条纹槽内的折射率; 其中所述多层结构包括有源层，并且所述有源层具有位于所述电流和光限制部分的条纹槽下面的区域和位于所述多层电流和光限制部分中的相应一个之下的区域; 并且其中在导向模式下相对于激光束在条纹槽外部的有源层的光限制因子GAMMA相对于反向导向模式中的激光束大于条纹槽外侧的光限制因子GAMMA。

公开(公告)号：US5335241A

公开(公告)日：1994-08-02

申请号：US751923

申请日：1991-08-30

申请人： Toshiyuki Okumura ,  Kazuhiko Inoguchi ,  Fumihiro Konushi ,  Haruhisa Takiguchi

发明人： Toshiyuki Okumura ,  Kazuhiko Inoguchi ,  Fumihiro Konushi ,  Haruhisa Takiguchi

IPC分类号： H01L33/00 ,  H01S5/22 ,  H01S5/227 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/227 ,  H01L33/0062 ,  H01S5/2201 ,  H01S5/32391

摘要： A buried stripe type semiconductor laser device having a mesa stripe whose side faces are {111} facets and having a current confinement structure under epitaxial layers burying the mesa stripe is disclosed. The buried stripe type semiconductor laser device comprises a (100) semiconductor substrate having a stripe-shaped ridge in the direction, a multi-layer film of a double hetero structure formed on the upper surface of the stripe-shaped ridge. The mutil-layer film includes a laser oscillating active layer of a smaller width than that of the stripe-shaped ridge. The current confinement means are formed at both sides of the mesa stripe on the semiconductor substrate. In addition, a method of fabricating a buried stripe type semiconductor laser device having no raised portion above a mesa stripe of a substrate is disclosed. The laser device can be mounted in position with the epitaxial layer side down, without the mesa stripe being damaged or strained.

摘要翻译： 公开了一种埋设条状半导体激光器件，其具有侧面为{111}面的台面条，并且在埋设台面条的外延层下具有电流限制结构。 掩埋条型半导体激光器件包括具有<011>方向上的条状脊的（100）半导体衬底，形成在条形脊的上表面上的双异质结的多层膜。 残膜层包括宽度小于条状脊的激光振荡活性层。 电流限制装置形成在半导体衬底上的台面条的两侧。 另外，公开了一种在衬底的台面条之上没有凸起部分的掩埋条状半导体激光器件的制造方法。 激光器件可以安装在外延层一侧的位置，而不会使台面条被损坏或变形。

公开(公告)号：US5031991A

公开(公告)日：1991-07-16

申请号：US444442

申请日：1989-12-01

申请人： Hiroshi Nakatsu ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi ,  Haruhisa Takiguchi

发明人： Hiroshi Nakatsu ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi ,  Haruhisa Takiguchi

IPC分类号： G02B6/32 ,  G02B3/08 ,  G02B6/42

CPC分类号： G02B6/4206 ,  G02B3/08

摘要： An optical coupling circuit element providing one transparent substrate, a first micro Fresnel lens formed on one side surface of said substrate, and a second micro Fresnel lens formed on the other side surface of said substrate, so that coherent light incident into said first micro Fresnel lens is projected, through said transparent substrate, on said second micro Fresnel lens to be left therefrom as a collimating beams, which is useful for directing light emitted from coherent source such as semi-conductor laser to optical communication means such as optical fiber for condensation.

公开(公告)号：US06842470B2

公开(公告)日：2005-01-11

申请号：US10302538

申请日：2002-11-22

申请人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

发明人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/32 ,  H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/2219 ,  H01S5/2231

摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

摘要翻译： 氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。 在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面 与安装表面相对的分层结构。

公开(公告)号：US06549552B1

公开(公告)日：2003-04-15

申请号：US09143608

申请日：1998-08-31

申请人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

发明人： Susumu Omi ,  Toshiyuki Okumura ,  Kazuhiko Inoguchi

IPC分类号： H01S500

CPC分类号： H01S5/32341 ,  H01S5/021 ,  H01S5/0425 ,  H01S5/2219 ,  H01S5/2231

摘要： A nitride-type compound semiconductor laser device includes a substrate and a layered structure provided on the substrate. A light absorption layer having a bandgap smaller than a bandgap of an active layer in the layered structure is provided in a position between the cladding layer, which is provided on a side opposite to a mount surface with respect to the active layer, and a surface of the layered structure which is opposite to the mount surface.

摘要翻译： 氮化物型化合物半导体激光器件包括衬底和设置在衬底上的层状结构。 在层叠结构中具有比有源层的带隙小的带隙的光吸收层设置在设置在与安装面相对于有源层的一侧的包层之间的位置和表面 与安装表面相对的分层结构。