公开(公告)号：US06631376B1

公开(公告)日：2003-10-07

申请号：US09471197

申请日：1999-12-23

申请人： Hirohisa Yamamoto ,  Takashi Shinoda

发明人： Hirohisa Yamamoto ,  Takashi Shinoda

IPC分类号： G06F1730

CPC分类号： G06F8/10 ,  Y10S707/99933 ,  Y10S707/99945

摘要： An exchange servicing development support system automatically replaces definition contents and creates generation codes to new specifications, even if interfacing is changed, by reading servicing definition result files stored in accordance with old specifications. By providing a unit for re-constructing service tree structure data in a format in accordance with information about compatibility description in a menu describing file, the service tree structure data is automatically created. Since information about compatibility is allocated to the menu describing a file stored in the storage device, each unit in the data processing device is adapted to be used for a general purpose. The description of replacement of various patterns can be made by descriptions of information about compatibility in the menu describing file.

摘要翻译： 交换服务开发支持系统通过读取根据旧规范存储的服务定义结果文件，自动替换定义内容并将生成代码创建为新规范，即使接口更改。 通过提供用于根据关于菜单描述文件中的兼容性描述的信息的格式重新构建服务树结构数据的单元，自动创建服务树结构数据。 由于关于兼容性的信息被分配给描述存储在存储设备中的文件的菜单，所以数据处理设备中的每个单元适于用于通用目的。 可以通过描述关于菜单描述文件中的兼容性的信息来进行各种模式的替换的描述。

公开(公告)号：US5404309A

公开(公告)日：1995-04-04

申请号：US830424

申请日：1992-01-31

申请人： Hirohisa Yamamoto ,  Toshiaki Nagakawa ,  Takuji Kurimoto

发明人： Hirohisa Yamamoto ,  Toshiaki Nagakawa ,  Takuji Kurimoto

IPC分类号： H05K3/00 ,  G06F17/50 ,  H01L27/08 ,  H05K1/16

CPC分类号： H01L27/0802 ,  G06F17/5068 ,  H05K1/16 ,  H05K3/0005

摘要： A CAD apparatus for designing a pattern of an electric circuit, is provided with: a printed resistor shape parameter storing unit for storing values of printed resistor shape parameters including a maximum aspect ratio and a minimum aspect ratio of a printed resistor, which pattern is to be designed; a resistor parameter storing unit for storing values of resistor parameters including a necessary resistance of the printed resistor; a resistor material table storing unit for storing a resistor material table including names of various resistor materials and resistances per unit area of the various resistor materials correspondingly; and an optimum resistor material name storing unit for storing an optimum resistor material name of the printed resistor. The CAD apparatus is also provided with an optimum resistor material selecting unit for calculating aspect ratios of the various resistor materials according to a predetermined rule based on the resistances of the various resistor materials and the necessary resistance, selecting the optimum resistor material according to a predetermined rule based on the values of the calculated aspect ratios and the values of the maximum and minimum aspect ratios, and storing the name of the selected optimum resistor material into the optimum resistor material name storing unit.

摘要翻译： 一种用于设计电路图案的CAD装置，具有：印刷电阻器形状参数存储单元，用于存储包括印刷电阻器的最大纵横比和最小纵横比的印刷电阻器形状参数的值，该图形为 设计; 电阻器参数存储单元，用于存储包括印刷电阻器的必要电阻的电阻器参数的值; 电阻材料表存储单元，用于相应地存储包含各种电阻材料的各种电阻材料的名称和每单位面积的电阻的电阻器材料表; 以及用于存储印刷电阻器的最佳电阻器材料名称的最佳电阻器材料名称存储单元。 CAD装置还设置有最佳电阻材料选择单元，用于根据各种电阻材料的电阻和所需的电阻，根据预定规则计算各种电阻材料的纵横比，根据预定的方式选择最佳电阻材料 基于计算的宽高比和最大和最小纵横比的值的规则，并将所选择的最佳电阻材料的名称存储到最佳电阻材料名称存储单元中。

公开(公告)号：US5187558A

公开(公告)日：1993-02-16

申请号：US517628

申请日：1990-05-01

申请人： Yuichi Nakashima ,  Mitsuhiro Tomikawa ,  Hirohisa Yamamoto

发明人： Yuichi Nakashima ,  Mitsuhiro Tomikawa ,  Hirohisa Yamamoto

IPC分类号： H01L23/29 ,  H01L23/31 ,  H01L29/06

CPC分类号： H01L29/0657 ,  H01L23/298 ,  H01L23/3135 ,  H01L23/3178 ,  H01L24/05 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12036 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041

摘要： A resin sealed semiconductor device includes a semiconductor chip formed on a substrate and sealed with resin. A concave portion is formed on a major surface of a semiconductor substrate between an insulating film for isolation and an edge of the major surface of the semiconductor substrate. This concave portion is filled with a buffer member having an elastic modulus smaller than that of the material of the semiconductor substrate. Mechanical stress applied to an edge of the semiconductor substrate, caused by the callosity of resin, is absorbed and reduced by the buffer member. A portion of the semiconductor substrate between the concave portion and the insulating film for isolation prevents the remainder of the mechanical stress from being transmitted from the buffer member to the insulating film and circuit elements.

摘要翻译： 树脂密封半导体器件包括形成在基板上并用树脂密封的半导体芯片。 在绝缘绝缘膜和半导体衬底的主表面的边缘之间的半导体衬底的主表面上形成凹部。 该凹部填充有弹性模量小于半导体衬底的材料的缓冲构件。 施加到由树脂的胼los质引起的半导体衬底边缘的机械应力被缓冲构件吸收和减少。 用于隔离的凹部和绝缘膜之间的半导体衬底的一部分防止其余的机械应力从缓冲构件传递到绝缘膜和电路元件。

公开(公告)号：US20070026632A1

公开(公告)日：2007-02-01

申请号：US11492823

申请日：2006-07-26

申请人： Hirohisa Yamamoto

发明人： Hirohisa Yamamoto

IPC分类号： H01L21/76

CPC分类号： H01L21/76235 ,  H01L29/785

摘要： The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.

摘要翻译： 本发明提供一种制造具有圆角部分和开阔开口的沟槽的方法。 使用二氯乙烯（DCE）的卤素氧化法进行各向异性氧化，形成各向异性氧化膜，使得沟槽的肩部的膜厚变厚，逐渐降低到更接近底部，去除各向异性氧化膜， 优选地将沟槽的肩部退回，从而使肩部充分地倒圆以拓宽开口。 然后，绝缘构件嵌入沟槽中。 沟槽及其附近的肩部的圆形部分被用作MOS晶体管的沟道。

公开(公告)号：US5354986A

公开(公告)日：1994-10-11

申请号：US974873

申请日：1992-11-12

申请人： Satoshi Yamada ,  Hirohisa Yamamoto ,  Shigeru Shiratake

发明人： Satoshi Yamada ,  Hirohisa Yamamoto ,  Shigeru Shiratake

IPC分类号： C23C14/48 ,  C23C14/54 ,  G21K1/14 ,  H01J37/02 ,  H01J37/317 ,  H01L21/265 ,  H01J37/30 ,  H05H3/00

CPC分类号： G21K1/14 ,  H01J37/023 ,  H01J37/3171 ,  H01J2237/0044 ,  H01J2237/30455

摘要： An ion implantation apparatus includes a charge neutralizer having a control circuit which controls the quantity of secondary electrons irradiating a semiconductor wafer. Electrons are generated in response to a direction of movement of a semiconductor wafer to neutralize positive charge on the semiconductor wafer. The apparatus can neutralize the positive charge homogeneously and prevent electrical breakdown of the semiconductor wafer.

摘要翻译： 离子注入装置包括具有控制电路的电荷中和器，该控制电路控制照射半导体晶片的二次电子的量。 响应于半导体晶片的移动方向产生电子以中和半导体晶片上的正电荷。 该装置可以均匀地中和正电荷并防止半导体晶片的电击穿。

公开(公告)号：US07902027B2

公开(公告)日：2011-03-08

申请号：US12604006

申请日：2009-10-22

申请人： Hirohisa Yamamoto

发明人： Hirohisa Yamamoto

IPC分类号： H01L21/336

CPC分类号： H01L21/28202 ,  H01L27/10876 ,  H01L29/512 ,  H01L29/518 ,  H01L29/66621

摘要： A semiconductor device includes a recessed-channel-array MOSFET including a gate electrode having a portion received in a recess. The gate insulting film has a first portion made of silicon oxide in contact with the sidewall of the recess and a second portion made of silicon oxynitride in contact with the bottom of the recess. The first portion has an equivalent oxide thickness larger than the equivalent oxide thickness of the second portion to reduce the parasitic capacitance of the gate electrode.

摘要翻译： 一种半导体器件包括凹入沟道阵列MOSFET，其包括具有容纳在凹部中的部分的栅电极。 栅极绝缘膜具有由与凹部的侧壁接触的氧化硅制成的第一部分和与凹部的底部接触的氮氧化硅制成的第二部分。 第一部分具有大于第二部分的等效氧化物厚度的等效氧化物厚度，以减小栅电极的寄生电容。

公开(公告)号：US07745303B2

公开(公告)日：2010-06-29

申请号：US11492823

申请日：2006-07-26

申请人： Hirohisa Yamamoto

发明人： Hirohisa Yamamoto

IPC分类号： H01L21/76

CPC分类号： H01L21/76235 ,  H01L29/785

摘要： The present invention provides a method of manufacturing a trench with a rounded corner portion and a broadened opening. Anisotropic oxidation is carried out using a halogen oxidation method using dichloroethylene (DCE) to form an anisotropic oxide film such that the film thickness in a shoulder portion of the trench is thick and gradually decreases nearer the bottom, the anisotropic oxide film is removed, and the shoulder portion of the trench is preferentially backed off, thereby rounding the shoulder portion sufficiently to broaden the opening. Then, an insulating member is embedded in the trench. The rounded portion of the shoulder portion of the trench and vicinity thereof is used as a channel of a MOS transistor.

摘要翻译： 本发明提供一种制造具有圆角部分和开阔开口的沟槽的方法。 使用二氯乙烯（DCE）的卤素氧化法进行各向异性氧化，形成各向异性氧化膜，使得沟槽的肩部的膜厚变厚，逐渐降低到更接近底部，去除各向异性氧化膜， 优选地将沟槽的肩部退回，从而使肩部充分地倒圆以使开口变宽。 然后，绝缘构件嵌入沟槽中。 沟槽及其附近的肩部的圆形部分被用作MOS晶体管的沟道。

公开(公告)号：US06624095B1

公开(公告)日：2003-09-23

申请号：US09613690

申请日：2000-07-10

申请人： Hirohisa Yamamoto

发明人： Hirohisa Yamamoto

IPC分类号： H01L2126

CPC分类号： H01L21/324 ,  H01L21/28061

摘要： A wafer 38 having an exposed portion of silicon is transferred to a treatment chamber for lamp annealing. The atmosphere of the treatment chamber 32 is converted to a reduced pressure atmosphere (500 Torr) of an inert gas (N2). The wafer 38 is subjected to lamp annealing in the reduced pressure atmosphere of the inert gas (1050° C., 30 seconds).

摘要翻译： 具有硅暴露部分的晶片38被转移到用于灯退火的处理室。 处理室32的气氛被转化为惰性气体（N 2）的减压气氛（500Torr）。 在惰性气体的减压气氛（1050℃，30秒）中对晶片38进行灯退火。

公开(公告)号：US07539731B2

公开(公告)日：2009-05-26

申请号：US10889095

申请日：2004-07-13

申请人： Hirohisa Yamamoto ,  Kenichi Okazaki ,  Tsutomu Iitsuka

发明人： Hirohisa Yamamoto ,  Kenichi Okazaki ,  Tsutomu Iitsuka

IPC分类号： G06F15/16

CPC分类号： H04L67/325 ,  H04L51/043 ,  H04L51/14 ,  H04L67/2838 ,  H04L67/2842 ,  H04L69/329

摘要： A sender of a message uses a sender's portable telephone device to register, by way of a communication network, to a service agent: user's information, communication partner information, sending conditions, and a message. The service agent monitors whether the sending conditions are met, and when the sending conditions have been satisfied, executes processing to send the entered message to the receiver's portable telephone device of the communication partner that has been registered. The sending conditions include conditions relating to presence information that the communication partner can always access by way of a communication network through the communication partner's own communication terminal.

摘要翻译： 消息的发送者使用发送者的便携式电话设备通过通信网络向服务代理注册用户信息，通信伙伴信息，发送条件和消息。 服务代理监视是否满足发送条件，并且当发送条件已满足时，执行将输入的消息发送到已经注册的通信伙伴的接收者的便携式电话设备的处理。 发送条件包括与通信对方可以通过通信伙伴自己的通信终端通过通信网络总是访问的存在信息相关的条件。

公开(公告)号：US20050013291A1

公开(公告)日：2005-01-20

申请号：US10889095

申请日：2004-07-13

申请人： Hirohisa Yamamoto ,  Kenichi Okazaki ,  Tsutomu Iitsuka

发明人： Hirohisa Yamamoto ,  Kenichi Okazaki ,  Tsutomu Iitsuka

IPC分类号： G06F13/00 ,  H04L12/58 ,  H04L29/08 ,  H04M3/42 ,  H04M3/432 ,  H04M11/00 ,  H04Q7/38 ,  H04L12/66

CPC分类号： H04L67/325 ,  H04L51/043 ,  H04L51/14 ,  H04L67/2838 ,  H04L67/2842 ,  H04L69/329

摘要： A sender of a message uses a sender's portable telephone device to register, by way of a communication network, to a service agent: user's information, communication partner information, sending conditions, and a message. The service agent monitors whether the sending conditions are met, and when the sending conditions have been satisfied, executes processing to send the entered message to the receiver's portable telephone device of the communication partner that has been registered. The sending conditions include conditions relating to presence information that the communication partner can always access by way of a communication network through the communication partner's own communication terminal.

摘要翻译： 消息的发送者使用发送者的便携式电话设备通过通信网络向服务代理注册用户信息，通信伙伴信息，发送条件和消息。 服务代理监视是否满足发送条件，并且当发送条件已满足时，执行将输入的消息发送到已经注册的通信伙伴的接收者的便携式电话设备的处理。 发送条件包括与通信对方可以通过通信伙伴自己的通信终端通过通信网络总是访问的存在信息相关的条件。