公开(公告)号：US20100178611A1

公开(公告)日：2010-07-15

申请号：US12659774

申请日：2010-03-22

申请人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takazuki Ohnishi

发明人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takazuki Ohnishi

IPC分类号： G03F7/20

CPC分类号： B82Y40/00 ,  B82Y10/00 ,  G03F1/78 ,  G03F7/0382 ,  G03F7/0392 ,  H01J37/3174

摘要： A charged particle beam writing method on a chemical amplification type resist, comprising: coating said chemical amplification type resist which contains an acid diffusion inhibitor, on a surface of a mask substrate, exposing charged particle beams to said chemical amplification type resist layer on said surface of the mask substrate, baking said chemical amplification type resist layer which said charged particle beams were exposed, and developing said chemical amplification type resist after the baking, wherein an exposure current density of said electron beams exposing ranges of 50˜5000 A/cm2, said photo acid generator is in an amount ranging from 0.1 to 30 weight percent (wt %) relative to all solid content of said chemical amplification type resist, and said acid diffusion inhibitor is composed of at least one material selected from the group consisting of tertiary amine class, benzyl-carbamate class, benzoin-carbamate class, o-carbamoyl-hydroxy-amine class, o-carbamoyl-oxime class, and dithio-calbamate-quaternary ammonium salt.

摘要翻译： 一种化学放大型抗蚀剂的带电粒子束写入方法，包括：在掩模基板的表面上涂覆含有酸扩散抑制剂的所述化学放大型抗蚀剂，将带电粒子束暴露于所述表面上的所述化学放大型抗蚀剂层 对所述带电粒子束进行曝光的所述化学放大型抗蚀剂层进行烘烤，烘烤后显影所述化学放大型抗蚀剂，其中所述电子束的曝光电流密度为50〜5000A / cm 2， 所述光酸产生剂的量相对于所述化学增幅型抗蚀剂的全部固体含量为0.1〜30重量％（重量％），所述酸扩散抑制剂由选自三级 胺类，氨基甲酸苄酯类，苯偶姻 - 氨基甲酸酯类，邻氨基甲酰基 - 羟基 - 胺类，邻氨基甲酰基肟 屁股和二硫代氨基甲酸铵 - 季铵盐。

公开(公告)号：US20070243487A1

公开(公告)日：2007-10-18

申请号：US11734587

申请日：2007-04-12

申请人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takayuki Ohnishi

发明人： Hirohito Anze ,  Takehiko Katsumata ,  Shuichi Tamamushi ,  Takashi Kamikubo ,  Rieko Nishimura ,  Makoto Hiramoto ,  Tomoo Motosugi ,  Takayuki Ohnishi

IPC分类号： G03C1/00

CPC分类号： G03F1/78

摘要： The present invention realized the excellent dimensional accuracy of resist patterns by using a chemical amplification type resist whose effective acid diffusion length is shorten without decreasing throughput of a charged particle beam writing system.The resist pattern forming method of the present invention features that the amount of the acid diffusion inhibitor in a chemical amplification type resist in order to shorten the effective acid diffusion length increases and the current density of a charged particle exposure in order to prevent the throughput drop of the writing system increases.The present invention provides a resist pattern forming method comprising a process of coating a chemical amplification type resist on the surface of a processing substrate, a process of exposing patterns by using charged particle beams on the surface of the said substrate, a process of post exposure baking the chemical amplification type resist after the exposure, and a process of developing the said chemical amplification type resist.The said method features that the amount of an acid diffusion inhibitor in the said resist increases and the current density of the charged particle exposure also increases.

摘要翻译： 本发明通过使用有效的酸扩散长度缩短而不降低带电粒子束写入系统的通过量的化学放大型抗蚀剂来实现抗蚀剂图案的优异的尺寸精度。 本发明的抗蚀剂图案形成方法的特征在于为了缩短有效酸扩散长度，化学放大型抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度为了防止生产量下降 的写作系统增加。 本发明提供一种抗蚀剂图案形成方法，其包括在处理基板的表面上涂布化学放大型抗蚀剂的方法，通过在所述基板的表面上使用带电粒子束来曝光图案的处理，后曝光 在曝光后烘烤化学放大型抗蚀剂，以及显影所述化学放大型抗蚀剂的工艺。 所述方法的特征在于所述抗蚀剂中的酸扩散抑制剂的量增加，并且带电粒子暴露的电流密度也增加。

公开(公告)号：US20100173235A1

公开(公告)日：2010-07-08

申请号：US12649846

申请日：2009-12-30

申请人： Yasuo KATO ,  Jun Yashima ,  Hiroshi Matsumoto ,  Tomoo Motosugi ,  Tomohiro Iijima ,  Takayuki Abe

发明人： Yasuo KATO ,  Jun Yashima ,  Hiroshi Matsumoto ,  Tomoo Motosugi ,  Tomohiro Iijima ,  Takayuki Abe

IPC分类号： G03F7/20 ,  G21K5/00 ,  G21K1/00

CPC分类号： G03F1/68 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/025 ,  H01J37/3174

摘要： A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

摘要翻译： 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量，对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量，以计算用于校正雾化效果的起雾效果校正剂量 带电粒子束写入，并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度，合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域，并且基于合成的校正剂量，通过使用带电粒子束将目标物体上的图案写入。

公开(公告)号：US08309283B2

公开(公告)日：2012-11-13

申请号：US12649846

申请日：2009-12-30

申请人： Yasuo Kato ,  Jun Yashima ,  Hiroshi Matsumoto ,  Tomoo Motosugi ,  Tomohiro Iijima ,  Takayuki Abe

发明人： Yasuo Kato ,  Jun Yashima ,  Hiroshi Matsumoto ,  Tomoo Motosugi ,  Tomohiro Iijima ,  Takayuki Abe

IPC分类号： G03C5/00

CPC分类号： G03F1/68 ,  B82Y10/00 ,  B82Y40/00 ,  G21K1/025 ,  H01J37/3174

摘要： A writing method includes calculating a proximity effect-corrected dose for correcting a proximity effect in charged particle beam writing, for each first mesh region made by virtually dividing a writing region of a target object into a plurality of first mesh regions of a first mesh size, calculating a fogging effect-corrected dose by using the proximity effect-corrected dose calculated and an area density in the first mesh size with respect to a part of a calculation region for calculating the fogging effect-corrected dose for correcting a fogging effect in the charged particle beam writing, and by using an area density in a second mesh size larger than the first mesh size with respect to a remaining part of the calculation region, synthesizing the fogging effect-corrected dose and the proximity effect-corrected dose for the each first mesh region, and writing a pattern on the target object by using a charged particle beam based on a synthesized correction dose.

摘要翻译： 一种写入方法包括计算用于校正带电粒子束写入中的邻近效应的邻近效应校正剂量，对于通过将目标对象的写入区域虚拟地分成多个第一网格尺寸的第一网格区域而制成的每个第一网格区域 通过使用计算的邻近效应校正剂量和相对于计算区域的一部分的第一网格尺寸的面积密度来计算雾化效果校正剂量，以计算用于校正雾化效果的雾化效果校正剂量 带电粒子束写入，并且相对于计算区域的剩余部分使用相对于第一网格尺寸大的第二网格尺寸的面积密度，合成每个图像的雾化效果校正剂量和邻近效应校正剂量 第一网格区域，并且通过使用基于合成校正剂量的带电粒子束将目标物体上的图案写入。