摘要:
A milling apparatus is provided in which temperature rise of a treatment-object in milling treatment, especially of the substrate thereof, is prevented. In the apparatus, ionization mechanism 2 comprises casing 20d having an opening at the center portion of the face thereof opposing to substrate 5 held by substrate holder 6; a filament is placed at the position where the straight line drawn from the filament to substrate 5 is intercepted by casing 20d; and electromagnets 31, 32 are provided around ionization mechanism 2 for generating a magnetic field to produce magnetic lines extending through opening 20j to substrate 5.
摘要:
A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要:
The present invention provides a film forming method comprising the steps of ionizing sputtering particles and applying a periodically changing voltage to an electrode near a substrate, wherein a time for applying a voltage equal to or higher than an intermediate value between maximum and minimum values of the periodically changing voltage is shorter than a time for applying a voltage equal to or less than the intermediate value, and a film forming apparatus for carrying out the above method.
摘要:
A method for ionization film formation to form a deposited film by ionizing vaporized particles with an ionization mechanism of the hot-cathode system and injecting the ionized particles into a substrate is provided. The method includes the step of introducing He gas inside the ionization mechanism.
摘要:
Sputtering particles emitted from a target are ionized by the Penning ionization process. And the sputtering particles ionized are caused to fly in the direction of the substrate by a magnetic field formed by ambipolar diffusion due to a magnetic field generating means without scattering the particles to deposit the particles on the substrate. The partial pressure of a sputtering discharge gas in a discharge space is set to 1.3 Pa or less and a distance from the target to an ionization space is within twice the mean free path of the partial pressure of the sputtering discharge gas.
摘要:
In a deposited-film-forming method of forming a compound film on a substrate by a chemical reaction between the particles of a raw material emitted from a raw material particle generation source opposed to the substrate in the direction of the substrate, and the atoms of a reactive gas supplied to a flying space of the particles of the raw material, the space being interposed between the substrate and the raw material particle source, the atoms of a rare gas in an excited state are supplied to the flying space of the particles of the raw material, in order to ionize the atoms of the reactive gas and the particles of the raw material and thereby induce the chemical reaction.
摘要:
In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.
摘要:
There is disclosed an exhaust processing process of a processing apparatus for processing a substrate or a film, which comprises after the processing of the substrate or the film, introducing a non-reacted gas and/or a by-product into a trap means comprising a filament comprised of a high-melting metal material comprising as a main component at least one of tungsten, molybdenum and rhenium; and processing the non-reacted gas and/or the by-product inside the trap means. This makes it possible to prevent lowering in exhaust conductance, to lengthen the maintenance cycle of the processing apparatus, and to provide a high-quality product (processed substrate or film).
摘要:
The present invention provides an excellent organic EL device with a glass substrate and a sealing glass sheet which are thinned for weight reduction while avoiding lowering the durability and impact resistance of the device. The organic luminescence device is characterized in that sealing is performed at the space between a face of the sealing glass sheet along the outer edge and a face of the device substrate with a low melting point metal.
摘要:
The present invention provides an excellent organic EL device with a glass substrate and a sealing glass sheet which are thinned for weight reduction while avoiding lowering the durability and impact resistance of the device. The organic luminescence device is characterized in that sealing is performed at the space between a face of the sealing glass sheet along the outer edge and a face of the device substrate with a low melting point metal.