摘要:
Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要:
Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.
摘要:
Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.
摘要:
A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
摘要:
A method is provided for processing a workpiece in a plasma reactor chamber. The method includes coupling, to a plasma in the chamber, power of an RF frequency via a ceiling electrode and coupling, to the plasma, power of at least approximately the same RF frequency via a workpiece support electrode. The method also includes providing an edge ground return path. The method further includes adjusting the proportion between (a) current flow between said electrodes and (b) current flow to the edge ground return path from said electrodes, to control plasma ion density distribution uniformity over the workpiece.
摘要:
A plasma reactor includes an electrostatic chuck in the chamber for supporting the workpiece, a ceiling electrode facing the electrostatic chuck and an ESC electrode in the electrostatic chuck with an electrostatic clamping voltage supply coupled to the ESC electrode. The reactor further includes at least a first RF bias source of an LF or HF frequency coupled to the pedestal electrode, and first and second VHF power sources of different frequencies coupled to the same or to different ones of the electrodes. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber.
摘要:
RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.
摘要:
A method is provided for processing a workpiece in a plasma reactor chamber having electrodes including at least a ceiling electrode and a workpiece support electrode. The method includes coupling respective RF power sources of respective VHF frequencies f1 and f2 to either (a) respective ones of the electrodes or (b) a common one of the electrodes, where f1 is sufficiently high to produce a center-high non-uniform plasma ion distribution and f2 is sufficiently low to produce a center-low non-uniform plasma ion distribution. The method further includes adjusting a ratio of an RF parameter at the f1 frequency to the RF parameter at the f2 frequency so as to control plasma ion density distribution, the RF parameter being any one of RF power, RF voltage or RF current.
摘要:
A plasma reactor includes a ceiling electrode facing a workpiece support pedestal and a pedestal electrode in the pedestal and first and second VHF power sources of different frequencies coupled to the same or to different ones of the ceiling electrode and the pedestal electrode. The first and second VHF power sources are of sufficiently high and sufficiently low frequencies, respectively, to produce center-high and center-low plasma distribution non-uniformities, respectively, in the chamber. The reactor further includes a controller programmed to change the relative output power levels of the first and second VHF power sources to: (a) increase the relative output power level of the first VHF power source whenever plasma ion distribution has a predominantly edge-high non-uniformity, and (b) increase the relative output power level of the second VHF power source whenever plasma ion distribution has a predominantly center-high non-uniformity.
摘要:
A method of processing a workpiece in a plasma reactor chamber includes coupling RF power via an electrode to plasma in the chamber, the RF power being of a variable frequency in a frequency range that includes a fundamental frequency f. The method also includes coupling the electrode to a resonator having a resonant VHF frequency F which is a harmonic of the fundamental frequency f, so as to produce VHF power at the harmonic. The method controls the ratio of power near the fundamental f to power at harmonic F, by controlling the proportion of power from the generator that is up-converted from f to F, so as to control plasma ion density distribution.