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    Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
    2.
    发明申请
    Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products 有权
    晶圆预清洁电抗器电缆终端用于选择性抑制/反射源极和偏置频率交叉产品

    公开(公告)号：US20070006972A1

    公开(公告)日：2007-01-11

    申请号：US11178118

    申请日：2005-07-08

    申请人： John Piptone ,  Kenneth Smyth ,  Mei Po (Mabel) Yeung

    发明人： John Piptone ,  Kenneth Smyth ,  Mei Po (Mabel) Yeung

    IPC分类号： C23F1/00 ,  H01L21/302

    CPC分类号： H01J37/32174 ,  H01J37/321

    摘要： A plasma reactor for processing a workpiece in a reactor chamber having a wafer support pedestal within the chamber and process gas injection apparatus, an RF bias power generator coupled to the wafer support pedestal and having a bias frequency, a source power applicator, an RF source power generator having a source frequency and a coaxial cable coupled between the RF source power generator and the source power applicator includes a filter connected between the coaxial cable and the source power applicator that enhances uniformity of etch rate across the wafer and from reactor to reactor. The filter includes a set of reflection circuits coupled between the source power applicator and a ground potential and being tuned to, respectively, the bias frequency and intermodulation products of the bias frequency and the source frequency. The filter may further include a set of filter circuits coupled to the source power applicator and being tuned to, respectively, a second harmonic of the bias frequency and intermodulation products of the second harmonic of the bias frequency and the source frequency.

    摘要翻译： 一种等离子体反应器，用于在反应室内处理工件，所述反应室具有在所述室内的晶片支撑基座和处理气体注入装置，耦合到晶片支撑基座并具有偏置频率的RF偏置功率发生器，源功率施加器，RF源 源极频率的发电机和耦合在RF源功率发生器和源功率施加器之间的同轴电缆包括连接在同轴电缆和源电源施加器之间的滤波器，其增强跨晶片和从反应器到反应器的蚀刻速率的均匀性。 滤波器包括耦合在源功率施加器和接地电位之间并且分别被调谐到偏置频率和偏置频率和源频率的偏调产物的一组反射电路。 滤波器还可以包括耦合到源功率施加器的一组滤波器电路，并且分别被调谐到偏置频率的二次谐波和偏置频率和源频率的二次谐波的互调乘积。

    Plasma chamber with fixed RF matching
    4.
    发明授权
    Plasma chamber with fixed RF matching 失效
    等离子室与固定射频匹配

    公开(公告)号：US5643364A

    公开(公告)日：1997-07-01

    申请号：US641948

    申请日：1996-05-02

    申请人： Jun Zhao ,  Stefan Wolff ,  Kenneth Smyth ,  William Nixon Taylor, Jr. ,  Gerald McNutt

    发明人： Jun Zhao ,  Stefan Wolff ,  Kenneth Smyth ,  William Nixon Taylor, Jr. ,  Gerald McNutt

    IPC分类号： H01L21/02 ,  H01J37/32 ,  H05H1/46 ,  C23C16/00

    CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32935 ,  H01J37/3299 ,  H05H1/46

    摘要： A plasma chamber RF excitation system includes a high frequency RF power source having a fixed RF match circuit at its output and sensing and control apparatus for sensing the amount of RF power delivered by the RF power source and for regulating the output power level of the RF power source so as to maintain the RF power delivered by the RF power source at a desired level, and an RF plasma chamber including an RF radiator. The power source is mounted proximate or directly on the plasma chamber so that the distance between them is much less than an eighth of a wavelength at thr frequency of the RF source. The system may further include an endpoint detector for a plasma etch process or a chamber cleaning process which halts the process when the VSWR or reflected power ceases to change in response to the progress of the etch process.

    摘要翻译： 等离子体室RF激励系统包括在其输出端具有固定RF匹配电路的高频RF电源，以及感测和控制装置，用于感测由RF电源传送的RF功率的量并用于调节RF的输出功率电平 电源，以将由RF电源提供的RF功率维持在期望的水平，以及包括RF辐射器的RF等离子体室。 电源靠近或直接安装在等离子体室上，使得它们之间的距离远小于RF源频率的波长的八分之一。 该系统还可以包括用于等离子体蚀刻工艺的端点检测器或室清洁过程，当VSWR或反射功率响应于蚀刻过程的进行而停止变化时，该过程停止该过程。