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    Symmetric tunable inductively coupled HDP-CVD reactor
    2.
    发明授权
    Symmetric tunable inductively coupled HDP-CVD reactor 失效
    对称可调谐电感耦合HDP-CVD反应堆

    公开(公告)号：US06170428B2

    公开(公告)日：2001-01-09

    申请号：US08679927

    申请日：1996-07-15

    申请人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

    发明人： Fred C. Redeker ,  Farhad Moghadam ,  Hiroji Hanawa ,  Tetsuya Ishikawa ,  Dan Maydan ,  Shijian Li ,  Brian Lue ,  Robert J. Steger ,  Manus Wong ,  Yaxin Wong ,  Ashok K. Sinha

    IPC分类号： C23C1600

    CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

    摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers having sub 0.5 micron feature sizes having aspect ratios higher than 1.2:1. The system of the present invention includes: a dual RF zone inductively coupled plasma source configuration capable of producing radially tunable ion currents across the wafer; a dual zone gas distribution system to provide uniform deposition properties across the wafer surface; temperature controlled surfaces to improve film adhesion and to control extraneous particle generation; a symmetrically shaped turbomolecular pumped chamber body to eliminate gas flow or plasma ground azimuthal asymmetries; a dual helium cooling zone electrostatic chuck to provide and maintain uniform wafer temperature during processing; an all ceramic/aluminum alloy chamber construction to eliminate chamber consumables; and a remote fluorine based plasma chamber cleaning system for high chamber cleaning rate without chuck cover plates.

    摘要翻译： 本发明提供一种使用同时沉积和溅射掺杂和未掺杂的二氧化硅的HDP-CVD工具，其能够在具有高于1.2:1的纵横比的0.5微米特征尺寸的晶片上具有优异的间隙填充和覆盖膜沉积。 本发明的系统包括：双RF区电感耦合等离子体源配置，其能够跨晶片产生径向可调离子电流; 双区气体分配系统，以在晶片表面上提供均匀的沉积性能; 温度控制表面，以改善膜的附着力并控制外来颗粒的产生; 一个对称成形的涡轮分子抽吸室体，以消除气体流动或等离子体地面方位不对称性; 双氦冷却区静电卡盘，在加工过程中提供并保持晶圆温度均匀; 全陶瓷/铝合金室结构，可消除室内耗材; 以及远程氟基等离子体室清洁系统，用于无卡盘盖板的高室清洁率。

    Inductively coupled HDP-CVD reactor
    3.
    发明授权
    Inductively coupled HDP-CVD reactor 失效
    电感耦合HDP-CVD反应器

    公开(公告)号：US06182602B2

    公开(公告)日：2001-02-06

    申请号：US08865018

    申请日：1997-05-29

    申请人： Fred C. Redeker ,  Romuald Nowak ,  Tetsuya Ishikawa ,  Troy Detrick ,  Jay Dee Pinson, II

    发明人： Fred C. Redeker ,  Romuald Nowak ,  Tetsuya Ishikawa ,  Troy Detrick ,  Jay Dee Pinson, II

    IPC分类号： C23C1600

    CPC分类号： H01J37/32449 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32862

    摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

    摘要翻译： 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

    Substrate support with pressure zones having reduced contact area and temperature feedback
    4.
    发明授权
    Substrate support with pressure zones having reduced contact area and temperature feedback 失效
    具有减小的接触面积和温度反馈的压力区的基板支撑

    公开(公告)号：US5761023A

    公开(公告)日：1998-06-02

    申请号：US641147

    申请日：1996-04-25

    申请人： Brian Lue ,  Tetsuya Ishikawa ,  Fred C. Redeker ,  Manus Wong ,  Shijian Li

    发明人： Brian Lue ,  Tetsuya Ishikawa ,  Fred C. Redeker ,  Manus Wong ,  Shijian Li

    IPC分类号： H01L21/302 ,  G03F7/20 ,  H01L21/205 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6875 ,  G03F7/707 ,  G03F7/70708 ,  H01L21/6833

    摘要： An improved substrate support and method for operating in which multiple pressure zones are provided on the surface of the substrate support. A seal area is provided between the different zones to allow different gas pressures in the two zones. A higher gas pressure is provided to a zone corresponding to an area of the substrate where greater heat transfer is desired. The gap between the substrate support and the gas pressure are selected to provide the desired amount of heat transfer. Another aspect is limited substrate contact using protrusions, to maximize heat transfer gas flow. A closed loop control system varies the heat transfer gas pressure in accordance with a temperature sensor. For an electrostatic chuck, the dielectric thickness is varied to give a higher electrostatic force at the periphery of the substrate.

    摘要翻译： 改进的基板支撑件和操作方法，其中多个压力区域设置在基板支撑件的表面上。 在不同区域之间设置密封区域以允许两个区域中的不同气体压力。 更高的气体压力被提供给对应于需要更大热传递的基底区域的区域。 选择衬底支撑件和气体压力之间的间隙以提供所需量的热传递。 另一方面是使用突起限制衬底接触，以使热传递气流最大化。 闭环控制系统根据温度传感器改变传热气体压力。 对于静电卡盘，电介质厚度是变化的，以便在衬底的周围产生较高的静电力。

    Process kit
    5.
    发明授权
    Process kit 失效
    工艺套件

    公开(公告)号：US06189483B1

    公开(公告)日：2001-02-20

    申请号：US08865567

    申请日：1997-05-29

    申请人： Tetsuya Ishikawa ,  Padmanabhan Krishnaraj ,  Kaveh Niazi ,  Hiroji Hanawa

    发明人： Tetsuya Ishikawa ,  Padmanabhan Krishnaraj ,  Kaveh Niazi ,  Hiroji Hanawa

    IPC分类号： H01L2100

    CPC分类号： C23C16/45521 ,  C23C16/4405 ,  C23C16/4585 ,  C23C16/4586 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/6831 ,  Y10S156/915

    摘要： The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

    摘要翻译： 本发明提供一种HDP-CVD工具，其使用能够在晶片上具有优异的间隙填充和覆盖膜沉积的掺杂和未掺杂的二氧化硅的同时沉积和溅射。 本发明的工具包括：双RF区电感耦合等离子体源; 双区气体分配系统; 工具内的温度控制表面; 对称成形的涡轮分子抽水室体; 双冷却区静电吸盘; 全陶瓷/铝合金室; 和远程等离子体室清洁系统。

    Deposition chamber and method for depositing low dielectric constant films
    6.
    发明授权
    Deposition chamber and method for depositing low dielectric constant films 失效
    沉积室和沉积低介电常数膜的方法

    公开(公告)号：US06833052B2

    公开(公告)日：2004-12-21

    申请号：US10283565

    申请日：2002-10-29

    申请人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    发明人： Shijian Li ,  Yaxin Wang ,  Fred C. Redeker ,  Tetsuya Ishikawa ,  Alan W. Collins

    IPC分类号： C23F1600

    CPC分类号： C23C16/45574 ,  C23C16/401 ,  C23C16/45512 ,  C23C16/45514 ,  C23C16/45576 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a chamber (18) which houses a substrate support (14). A mixture of oxygen and SiF4 is delivered through a set of first nozzles (34) and silane is delivered through a set of second nozzles (34a) into the chamber around the periphery (40) of the substrate support. Silane (or a mixture of silane and SiF4) and oxygen are separately injected into the chamber generally centrally above the substrate from orifices (64, 76). The uniform dispersal of the gases coupled with the use of optimal flow rates for each gas results in uniformly low (under 3.4) dielectric constant across the film.

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的腔室（18）的壳体（4）。 氧和SiF 4的混合物通过一组第一喷嘴（34）输送，并且硅烷通过一组第二喷嘴（34a）输送到围绕衬底支撑件的周边（40）的腔室中。 将硅烷（或硅烷和SiF 4的混合物）和氧分别从孔口（64,76）中心地注入到基底上方的腔室中。 气体的均匀分散与每种气体的最佳流速相结合，导致薄膜均匀低（低于3.4）的介电常数。

    Gas distribution in deposition chambers
    9.
    发明授权
    Gas distribution in deposition chambers 有权
    沉积室中的气体分布

    公开(公告)号：US06251187B1

    公开(公告)日：2001-06-26

    申请号：US09433086

    申请日：1999-11-03

    申请人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

    发明人： Shijian Li ,  Fred C. Redeker ,  Tetsuya Ishikawa

    IPC分类号： C23C1600

    CPC分类号： C23C16/507 ,  C23C16/4405 ,  C23C16/455 ,  C23C16/5096 ,  C23C16/517 ,  H01J37/3244

    摘要： An improved deposition chamber (2) includes a housing (4) defining a vacuum chamber (18) which houses a substrate support (14). A set of first nozzles (34) have orifices (38) opening into the vacuum chamber in a circumferential pattern spaced apart from and generally overlying the periphery (40) of the substrate support. One or more seconds nozzle (56, 56a), positioned centrally above the substrate support, inject process gases into the vacuum chamber to improve deposition thickness uniformity. Deposition thickness uniformity is also improved by ensuring that the process gases are supplied to the first nozzles at the same pressure. If needed, enhanced cleaning of the nozzles can be achieved by slowly drawing a cleaning gas from within the vacuum chamber in a reverse flow direction through the nozzles using a vacuum pump (84).

    摘要翻译： 改进的沉积室（2）包括限定容纳衬底支撑件（14）的真空室（18）的壳体（4）。 一组第一喷嘴（34）具有以与基板支撑件的周边（40）间隔开并且通常覆盖基板支撑件的周边（40）的圆周图案而开口进入真空室的孔口（38）。 位于基板支架上方中心的一个或多个秒喷嘴（56,56a）将工艺气体注入真空室以改善沉积厚度均匀性。 通过确保将工艺气体以相同的压力供应到第一喷嘴，也提高了沉积厚度均匀性。 如果需要，可以通过使用真空泵（84）通过喷嘴沿反向流动方向从真空室内缓慢地抽取清洁气体来实现喷嘴的增强清洁。