公开(公告)号：US20060019477A1

公开(公告)日：2006-01-26

申请号：US10896113

申请日：2004-07-20

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： H01L21/425

CPC分类号： H01J37/32412 ,  C23C14/48 ,  H01J37/32357 ,  H01L21/2236 ,  H01L21/31612

摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural elongate orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid, and furnishing the selected species into the ion generation region in gaseous, molecular or atomic form and evacuating the process region at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region of about a factor of at least four. The process further includes applying plasma source power to generate a plasma of the selected species in the ion generation region, and applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region. The process also includes applying a sufficient bias voltage to at least one of: (a) the workpiece, (b) the grid, relative to at least one of: (a) the workpiece, (b) a plasma in the ion generation region, (c) a surface of the chamber, to accelerate the flux of ions to a kinetic energy distribution generally corresponding to the desired ion implantation depth profile in the workpiece.

摘要翻译： 用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入工艺在反应室中进行，其中离子喷淋网格将室分成上部离子产生区域和下部工艺区域， 具有相对于离子喷淋栅格的表面平行方向定向的多个细长孔的离子喷淋格栅。 该方法包括将工件放置在工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面，并且将所选择的物质以气态，分子或原子形式提供给离子产生区域并排空工艺区域 其排气速率足以在离子喷淋格栅上从离子产生区域到达至少四倍的因子的过程区域产生压降。 该方法还包括施加等离子体源功率以在离子产生区域中产生所选择的物质的等离子体，以及将栅极电位施加到离子淋浴栅格以产生离子通过栅格离子并进入过程区域的通量。 该方法还包括向以下至少一个施加足够的偏置电压：（a）工件，（b）栅格，相对于以下至少一个：（a）工件，（b）离子产生区域中的等离子体 ，（c）室的表面，以将离子通量加速到通常对应于工件中期望的离子注入深度分布的动能分布。

公开(公告)号：US20050214478A1

公开(公告)日：2005-09-29

申请号：US10873600

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C16/00 ,  C23C16/40 ,  C23C16/452 ,  C23C16/517

CPC分类号： C23C16/452 ,  C23C16/402 ,  C23C16/517

摘要： A chemical vapor deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece is placed in the process region, so that a workpiece surface of the workpiece is generally facing a surface plane of the nearest one of the ion shower grids, and a gas mixture comprising a deposition precursor species is furnished into the ion generation region. The process region is evacuated at an evacuation rate sufficient to create a pressure drop across the plural ion shower grids between the ion generation and process regions whereby the pressure in the ion generation region is several times the pressure in the process region. The process further includes applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region and applying successive grid potentials to successive ones of the grids.

摘要翻译： 化学气相沉积工艺在具有一组多个并联离子淋浴网格的反应室中进行，该平行离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 将工件放置在工艺区域中，使得工件的工件表面通常面向最接近的一个离子淋浴栅格的表面，并且将包含沉积前体物质的气体混合物配备到离子产生区域中。 处理区域以足以在离子产生和处理区域之间的多个离子淋浴栅格之间产生压降的抽空速率抽真空，由此离子产生区域中的压力是处理区域中压力的几倍。 该方法还包括施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，并将连续的栅格电势施加到连续的栅极。

公开(公告)号：US20050214477A1

公开(公告)日：2005-09-29

申请号：US10873485

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C16/00 ,  C23C16/40 ,  C23C16/452 ,  C23C16/517

CPC分类号： C23C16/452 ,  C23C16/402 ,  C23C16/517

摘要： A chemical vapor deposition process is carried out in a reactor chamber with an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region facing the ion shower grid, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. A gas mixture is furnished comprising deposition precursor species into the ion generation region and the process region is evacuated at an evacuation rate sufficient to create a pressure drop across the ion shower grid from the ion generation region to the process region whereby the pressure in the ion generation region is at least several times the pressure in the process region. A layer of material of a desired thickness is deposited on the workpiece by: (a) applying plasma source power to generate a plasma of the deposition precursor species in the ion generation region, and (b) applying a grid potential to the ion shower grid to create a flux of ions from the plasma through the grid and into the process region.

摘要翻译： 在具有离子喷淋网格的反应室中进行化学气相沉积工艺，该离子喷淋网格将室分成上部离子产生区域和下部工艺区域，离子喷淋格栅具有相对于一个非平行方向取向的多个孔口 离子淋浴网格的表面。 工件放置在面向离子喷淋格栅的工艺区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。 配备气体混合物，其包括沉积前体物质进入离子产生区域，并且处理区域以足以在从离子产生区域到过程区域的离子喷淋网格上产生压降的抽空速率抽真空，由此离子中的压力 发生区域至少是过程区域压力的几倍。 通过以下步骤沉积所需厚度的一层材料：（a）施加等离子体源功率以在离子产生区域中产生沉积前体物质的等离子体，和（b）将栅格电位施加到离子喷淋栅格 以从等离子体中产生离子通过网格并进入过程区域。

公开(公告)号：US20050211546A1

公开(公告)日：2005-09-29

申请号：US10873602

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C16/04 ,  C23C16/507 ,  H01J37/32

CPC分类号： C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357 ,  H01J37/32449

摘要： A reactive sputter deposition process is carried out in a reactor chamber having an ion shower grid that divides the chamber into an upper ion generation region and a lower process region, the ion shower grid having a plural orifices oriented in a non-parallel direction relative to a surface plane of the ion shower grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of the ion shower grid. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma from deposition precursor species sputtered from the target, applying a grid potential to the ion shower grid to create a flux of ions through the grid, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.

摘要翻译： 反应性溅射沉积工艺在具有将腔室分成上离子产生区域和较低工艺区域的离子喷淋栅格的反应室中进行，离子喷淋栅格具有相对于 离子淋浴网格的表面。 工件被放置在处理区域中，工件具有大致面向离子喷淋栅格的表面的工件表面。 该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以便从沉淀前体物质溅射出靶，产生栅电位 到离子淋浴网格以产生通过栅格的离子通量，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

公开(公告)号：US20060019039A1

公开(公告)日：2006-01-26

申请号：US10895784

申请日：2004-07-20

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C14/00

CPC分类号： H01J37/32357 ,  C23C14/046 ,  C23C14/48 ,  C23C16/045 ,  H01J37/32412

摘要： A plasma immersion ion implantation process for implanting a selected species at a desired ion implantation depth profile in a workpiece is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, the plural orifices oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. The process includes placing a workpiece in the process region, the workpiece having a workpiece surface generally facing the surface plane of the closest one of the plural ion shower grids, and furnishing the selected species into the ion generation region. The process further includes evacuating the process region, and applying plasma source power to generate a plasma of the selected species in the ion generation region. The process also includes applying successive grid potentials to successive ones of the grids and applying a bias potential to the workpiece. The combination of the grid and bias potentials corresponds to the desired ion implantation depth profile in the workpiece.

摘要翻译： 在具有一组多个并联离子淋浴网格的反应室中进行用于在工件中以期望的离子注入深度分布植入选定物种的等离子体浸没离子注入方法，该多个平行离子淋浴网将腔室分成上部离子产生区域和下部 处理区域，每个离子淋浴栅格具有从栅格到栅格相互配准的多个孔，多个孔相对于各个离子喷淋栅格的表面平行于非平行方向。 该工艺包括将工件放置在工艺区域中，工件具有大致面对多个离子淋浴栅格中最接近的一个的表面的工件表面，并将所选择的物质提供到离子产生区域中。 该方法还包括抽空处理区域，以及施加等离子体源功率以在离子产生区域中产生所选物种的等离子体。 该过程还包括将连续的栅格电势施加到连续的栅格并向工件施加偏置电位。 栅格和偏置电位的组合对应于工件中期望的离子注入深度分布。

公开(公告)号：US20050211547A1

公开(公告)日：2005-09-29

申请号：US10873609

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C14/00 ,  C23C14/34 ,  C23C14/35 ,  C23C16/04 ,  C23C16/507 ,  H01J37/32

CPC分类号： H01J37/32449 ,  C23C14/0036 ,  C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

摘要： A reactive sputter deposition process is carried out in a reactor chamber having a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower process region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective grid. A workpiece is placed in the process region, the workpiece having a workpiece surface generally facing the surface plane of nearest one of the ion shower grids. The process includes sputtering deposition precursor species from a sputter target comprising a semiconductor species in the ion generation region, applying RF plasma source power to the ion generation region so as to generate a plasma of the deposition precursor species sputtered from the target, applying successive grid potentials to successive ones of the grids to create a flux of ions through at least some of the plural grids, and furnishing a gas species into the reactor chamber for combining with the semiconductor atoms to form molecules that deposit on the workpiece surface.

摘要翻译： 反应性溅射沉积工艺在具有一组多个平行离子淋浴网格的反应器室中进行，所述多个并联离子淋浴网将腔室分成上部离子产生区域和下部处理区域，每个离子淋浴网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应网格的表面平面在非平行方向上定向。 工件被放置在工艺区域中，工件的工件表面一般面对最接近离子淋浴网格的表面。 该方法包括从离子产生区域中包含半导体物质的溅射靶溅射沉积前体物质，将RF等离子体源功率施加到离子产生区域，以产生从靶溅射的沉积前体物质的等离子体，施加连续格栅 通过至少一些多个栅格产生离子通量的电势，并且将气体物质提供到反应器室中以与半导体原子组合以形成沉积在工件表面上的分子。

公开(公告)号：US20050211171A1

公开(公告)日：2005-09-29

申请号：US10873474

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C16/00 ,  C23C16/04 ,  C23C16/507 ,  H01J37/32

CPC分类号： H01J37/32449 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and an ion shower grid dividing the chamber into an upper ion generation region and a lower process region, the ion shower grid having plural orifices oriented in a non-parallel direction relative to a surface plane of the grid. A workpiece support in the process region has a workpiece support surface in facing relationship to the ion shower grid. The reactor further includes a reactive species source for introducing into the ion generation region a chemical vapor deposition precursor species, a vacuum pump coupled to the process region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the ion shower grid. The orifices through the grid have an aspect ratio sufficient to limit ion trajectories in the process region to a narrow angular range about the non-parallel direction and a resistance to gas flow sufficient to support a pressure drop of at least a factor of about 4 across the grid.

摘要翻译： 用于处理半导体工件的等离子体反应器包括反应室和将室分成上离子产生区域和下处理区域的离子喷淋栅格，离子喷淋栅格具有相对于表面在非平行方向上取向的多个孔口 电网的平面 在工艺区域中的工件支撑件具有与离子淋浴网格面对的工件支撑表面。 所述反应器还包括用于将化学气相沉积前体物质，耦合到所述工艺区域的真空泵引入所述离子产生区域中的反应物质源，用于在所述离子产生区域中产生等离子体的等离子体源功率施加器和栅极电位源 耦合到离子淋浴网格。 通过电网的孔口具有足以将过程区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持至少约4倍的压降的气流阻力 电网。

公开(公告)号：US20050211170A1

公开(公告)日：2005-09-29

申请号：US10873463

申请日：2004-06-22

申请人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

发明人： Hiroji Hanawa ,  Tsutomu Tanaka ,  Kenneth Collins ,  Amir Al-Bayati ,  Kartik Ramaswamy ,  Andrew Nguyen

IPC分类号： C23C14/35 ,  C23C16/00 ,  C23C16/04 ,  C23C16/507 ,  H01J37/32

CPC分类号： H01J37/32449 ,  C23C14/358 ,  C23C16/045 ,  C23C16/507 ,  H01J37/32357

摘要： A plasma reactor for processing a semiconductor workpiece includes a reactor chamber and a set of plural parallel ion shower grids that divide the chamber into an upper ion generation region and a lower reactor region, each of the ion shower grids having plural orifices in mutual registration from grid to grid, each orifice being oriented in a non-parallel direction relative to a surface plane of the respective ion shower grid. A workpiece support in the process region faces the lowermost one of the ion shower grids. A reactive species source furnishes into the ion generation region a chemical vapor deposition precursor species. The reactor further includes a vacuum pump coupled to the reactor region, a plasma source power applicator for generating a plasma in the ion generation region and a grid potential source coupled to the set of ion shower grids. The orifices through at least some of the ion shower grids have an aspect ratio sufficient to limit ion trajectories in the reactor region to a narrow angular range about the non-parallel direction, and a resistance to gas flow sufficient to support a pressure drop between the ion generation and reactor regions of about at least a factor of 4. The grid potential source can be capable of applying different voltages to different ones of the grids.

摘要翻译： 一种用于加工半导体工件的等离子体反应器包括反应室和一组多个并联离子淋浴网格，其将腔室分成上部离子产生区域和下部反应器区域，每个离子淋浴器网格具有相互配准的多个孔口 网格到网格，每个孔口相对于相应的离子喷淋网格的表面平行于非平行方向。 工艺区域中的工件支撑面向最下面的离子淋浴网格。 反应物种源向离子产生区域提供化学气相沉积前体物质。 反应器还包括耦合到反应器区域的真空泵，用于在离子产生区域中产生等离子体的等离子体源功率施加器和耦合到该组离子淋浴栅格的栅极电位源。 通过至少一些离子淋浴栅格的孔口具有足以将反应器区域中的离子轨迹限制在围绕非平行方向的窄角度范围的宽高比，以及足以支持压力降 离子产生和反应器区域至少约为4倍。电网电势源能够对不同的电网施加不同的电压。

公开(公告)号：US20080044960A1

公开(公告)日：2008-02-21

申请号：US11901969

申请日：2007-09-18

申请人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

发明人： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC分类号： H01L21/84

CPC分类号： H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

摘要： A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

摘要翻译： 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US20070032082A1

公开(公告)日：2007-02-08

申请号：US11199592

申请日：2005-08-08

申请人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

发明人： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC分类号： H01L21/302

CPC分类号： H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

摘要： A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

摘要翻译： 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。