公开(公告)号：US07026099B2

公开(公告)日：2006-04-11

申请号：US10419921

申请日：2003-04-22

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Eishi Shiobara ,  Daisuke Kawamura ,  Hiroko Nakamura

IPC分类号： G03F7/00

CPC分类号： H01L21/0279 ,  G03F7/0035 ,  H01L21/0275 ,  H01L21/0277 ,  H01L21/0278

摘要： A pattern forming method is disclosed which comprises providing a to-be-processed film on a substrate, providing a resist film on the to-be-processed film, patterning the resist film, providing a film of a radiosensitive compound on the to-be-processed film such that the patterned resist film is covered with the film of the radiosensitive compound, subjecting the film of the radiosensitive compound to irradiation and a development process, thus exposing an upper surface of the resist film and patterning the film of the radiosensitive compound, and removing the resist film and processing the to-be-processed film, using the patterned film of the radiosensitive compound as a mask.

公开(公告)号：US20070042297A1

公开(公告)日：2007-02-22

申请号：US11316898

申请日：2005-12-27

申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

公开(公告)号：US07968272B2

公开(公告)日：2011-06-28

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03C5/04

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US07687227B2

公开(公告)日：2010-03-30

申请号：US11316898

申请日：2005-12-27

申请人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

发明人： Eishi Shiobara ,  Daisuke Kawamura ,  Yasunobu Onishi ,  Shinichi Ito

IPC分类号： G03F7/26

CPC分类号： G03F7/11 ,  G03F7/2041

摘要： According to an aspect of the invention, there is provided a resist pattern forming method of forming a resist pattern by immersion exposure, comprising forming a resist film on a substrate to be treated, a contact angle between the resist film and an immersion liquid being a first angle, forming a first cover film on the resist film, a contact angle between the first cover film and the immersion liquid being a second angle which is larger than the first angle, forming a second cover film on the first cover film, a contact angle between the second cover film and the immersion liquid being a third angle which is smaller than the second angle, and forming a latent image on the resist film by the immersion exposure.

摘要翻译： 根据本发明的一个方面，提供了一种通过浸渍曝光形成抗蚀剂图案的抗蚀剂图案形成方法，包括在待处理的基底上形成抗蚀剂膜，所述抗蚀剂膜和浸渍液体之间的接触角为 第一角度，在抗蚀剂膜上形成第一覆盖膜，第一覆盖膜和浸渍液体之间的接触角是大于第一角度的第二角度，在第一覆盖膜上形成第二覆盖膜，接触 第二覆盖膜和浸液之间的角度是比第二角度小的第三角度，并且通过浸渍曝光在抗蚀剂膜上形成潜像。

公开(公告)号：US20070128554A1

公开(公告)日：2007-06-07

申请号：US11600198

申请日：2006-11-16

申请人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke Kawamura ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US20110229826A1

公开(公告)日：2011-09-22

申请号：US13118779

申请日：2011-05-31

申请人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

发明人： Daisuke KAWAMURA ,  Eishi Shiobara ,  Tomoyuki Takeishi ,  Kei Hayasaki ,  Yasunobu Onishi ,  Shinichi Ito ,  Tatsuhiko Higashiki

IPC分类号： G03F7/20

CPC分类号： G03F7/70925 ,  G03F7/70341

摘要： This invention discloses a method to form a resist pattern on a to-be-processed substrate by immersion exposure. A resist film is formed on the central portion of the upper surface of the to-be-processed substrate, on a bevel portion of the upper surface, which is obtained by chamfering the peripheral portion of the to-be-processed substrate, and on the end portion of the to-be-processed substrate. Pattern exposure for forming the latent image of a desired pattern on the resist film is executed while a liquid whose refractive index is higher than that of air exists between the resist film and a constituent element of a projection optical system of an exposure apparatus, which is nearest to the to-be-processed substrate. The resist film formed on the end portion of the to-be-processed substrate is removed by supplying a rinse solution to the end portion of the to-be-processed substrate after executing pattern exposure.

摘要翻译： 本发明公开了一种通过浸渍曝光在待处理衬底上形成抗蚀剂图案的方法。 在被处理基板的上表面的中央部，在上表面的斜面部分上形成抗蚀剂膜，该斜面部分是通过倒角被处理基板的周边部分而得到的， 待处理衬底的端部。 在抗蚀剂膜和曝光装置的投影光学系统的构成元素之间存在折射率高于空气的液体的情况下，在抗蚀剂膜上形成期望图案的潜像的图案曝光，其为 最接近被处理衬底。 在执行图案曝光之后，通过向被处理基板的端部供给冲洗液，除去形成在被处理基板的端部的抗蚀剂膜。

公开(公告)号：US20050214695A1

公开(公告)日：2005-09-29

申请号：US11081579

申请日：2005-03-17

申请人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

发明人： Hirokazu Kato ,  Yasunobu Onishi ,  Daisuke Kawamura

IPC分类号： G03F7/40 ,  B05D1/38 ,  G03F7/00 ,  G03F7/20 ,  G03F7/30 ,  H01L21/027 ,  H01L21/033

CPC分类号： H01L21/0337 ,  H01L21/0275

摘要： A pattern forming method which can suppress pattern collapse of a resist pattern comprises after developing a resist pattern formed from a resist film on a substrate, supplying a rinse agent onto the substrate to replace a developer on the substrate with the rinse agent, supplying an coating film material onto the substrate to replace at least a part of the rinse agent with the coating film material, wherein the coating film material contains a solvent and a solute different from the resist film, volatilizing the solvent in the coating film material to form an coating film covering the resist film on the substrate, removing at least a part of a surface of the coating film to expose at least a part of an upper surface of the resist pattern and form a mask pattern comprising the coating film, and processing the substrate using the mask pattern.

摘要翻译： 可以抑制抗蚀剂图案的图案塌陷的图案形成方法包括在从基板上的抗蚀剂膜形成的抗蚀剂图案显影之后，将冲洗剂供应到基板上以用冲洗剂代替基板上的显影剂， 将薄膜材料涂覆在基材上以用涂膜材料代替至少一部分漂洗剂，其中涂膜材料含有溶剂和不同于抗蚀剂膜的溶质，挥发涂膜材料中的溶剂以形成涂层 膜，覆盖基板上的抗蚀剂膜，去除涂膜的表面的至少一部分以暴露抗蚀剂图案的上表面的至少一部分，并形成包含涂膜的掩模图案，并使用 掩模图案。

公开(公告)号：US06270948B1

公开(公告)日：2001-08-07

申请号：US09327223

申请日：1999-06-07

申请人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

发明人： Yasuhiko Sato ,  Yoshihiko Nakano ,  Rikako Kani ,  Shuji Hayase ,  Yasunobu Onishi ,  Eishi Shiobara ,  Seiro Miyoshi ,  Hideto Matsuyama ,  Masaki Narita ,  Sawako Yoshikawa

IPC分类号： G03F700

CPC分类号： G03F7/094 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02282 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/3121

摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。

公开(公告)号：US06569595B1

公开(公告)日：2003-05-27

申请号：US09512286

申请日：2000-02-24

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

IPC分类号： G03F700

CPC分类号： G03F7/091

摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.