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公开(公告)号：US07969429B2
公开(公告)日：2011-06-28
申请号：US11941240
申请日：2007-11-16
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： H01L29/739 , H01L31/00 , H03F3/16 , G09G3/28 , G09G5/00 , G06F3/038 , H01L27/10 , H01L29/73 , H03F3/04 , G09G3/20
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US07358968B2
公开(公告)日：2008-04-15
申请号：US10991243
申请日：2004-11-17
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： H01L29/739 , H01L31/00 , H03F3/16 , G09G3/28 , G09G5/00 , G06F3/038 , H01L27/10 , H01L29/73 , H03F3/04 , G09G3/20
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US20050134533A1
公开(公告)日：2005-06-23
申请号：US10991243
申请日：2004-11-17
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
IPC分类号： G09G3/20 , G09G3/291 , G09G3/294 , G09G3/296 , H01L21/822 , H01L21/8238 , H01L27/04 , H01L27/06 , H01L27/092 , H03K17/687 , G09G3/28
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US20090302347A1
公开(公告)日：2009-12-10
申请号：US11919504
申请日：2006-09-29
IPC分类号： H01L27/04 , H01L29/861
CPC分类号： H01L27/0207 , G09G3/296 , G09G2310/0289 , G09G2330/04 , H01L24/05 , H01L27/0251 , H01L27/0629 , H01L27/11803 , H01L2224/05554 , H01L2924/01004 , H01L2924/13055 , H01L2924/14 , H01L2924/19043 , H01L2924/3011 , H01L2924/3025
摘要： A semiconductor integrated circuit includes a plurality of circuit cells each including a pad on a semiconductor chip. Each of the circuit cells includes a high-side transistor, a level shift circuit, a low-side transistor, a pre-driver, and a pad. The high-side transistor and the low-side transistor are arranged to face each other with the pad interposed therebetween.
摘要翻译： 半导体集成电路包括多个电路单元，每个电路单元包括半导体芯片上的焊盘。 每个电路单元包括高侧晶体管，电平移位电路，低侧晶体管，预驱动器和焊盘。 高侧晶体管和低侧晶体管被布置成彼此面对，垫间插入其间。
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公开(公告)号：US20080068368A1
公开(公告)日：2008-03-20
申请号：US11941240
申请日：2007-11-16
申请人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
发明人： Masahiko Sasada , Hiroki Matsunaga , Masashi Inao , Hiroshi Ando , Jinsaku Kaneda , Eisaku Maeda , Akihiro Maejima
CPC分类号： G09G3/296 , G09G3/282 , G09G3/294 , G09G2300/0408 , G09G2310/0289 , G09G2330/04
摘要： The collector, emitter, and base of a bipolar transistor circuit are connected to a high side power supply terminal, the drain of a level shift transistor, and a floating power supply terminal, respectively. When a high side output transistor is on, the floating power supply terminal is at the potential of a high potential power supply terminal. The high side power supply terminal is at a potential higher than the potential of the floating power supply terminal by a constant voltage. Turning the level shift transistor on, its drain potential drops below the potential of the floating power supply terminal; The base current flows through the bipolar transistor circuit and the drain potential of the level shift transistor is clamped near the potential of the floating power supply terminal; The bipolar transistor circuit is turned on and its collector current supplies the drain current of the level shift transistor.
摘要翻译： 双极晶体管电路的集电极，发射极和基极分别连接到高侧电源端子，电平移位晶体管的漏极和浮动电源端子。 当高边输出晶体管导通时，浮动电源端子处于高电位电源端子的电位。 高侧电源端子通过恒定电压处于高于浮动电源端子的电位的电位。 开启电平移位晶体管时，其漏极电位降低到浮动电源端子的电位以下; 基极电流流过双极晶体管电路，电平移位晶体管的漏极电压钳位在浮动电源端子的电位附近; 双极晶体管电路导通，其集电极电流提供电平移位晶体管的漏极电流。
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公开(公告)号：US07495296B2
公开(公告)日：2009-02-24
申请号：US11139590
申请日：2005-05-31
IPC分类号： H01L29/94
CPC分类号： H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, wherein a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要翻译： 本发明涉及多通道半导体集成电路的布局，并提供具有三元电路的半导体集成电路的布局，以增加半导体集成电路中的集成度并稳定输出特性。 一方面通过布置第二高侧晶体管，二极管，第二电平移位电路和低端晶体管，第一高侧晶体管，第一电平移位电路和预置电路来形成三元电路， 驱动器，使得每个单元排列成一行，并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间，其中第一电平移位电路的单元宽度，第二电平移位 电路和预驱动器对应于低侧晶体管的单元宽度。
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公开(公告)号：US20050263910A1
公开(公告)日：2005-12-01
申请号：US11139590
申请日：2005-05-31
IPC分类号： H01L23/528 , H01L27/118 , H01L23/52
CPC分类号： H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a layout of a multi-channel semiconductor integrated circuit and provides a layout of a semiconductor integrated circuit having ternary circuits in order to increase a degree of integration in the semiconductor integrated circuit and stabilize the output characteristics. A ternary circuit is formed by arranging a second high-side transistor, a diode, a second level shift circuit on one hand, and a low-side transistor, a first high-side transistor, a first level shift circuit, and a pre-driver on the other, so that each of the cells are arranged in a row and an output bonding pad is placed between the second high-side transistor and the low-side transistor, where a cell width of the first level shift circuit, second level shift circuit and pre-driver corresponds to a cell width of the low-side transistor.
摘要翻译： 本发明涉及多通道半导体集成电路的布局，并提供具有三元电路的半导体集成电路的布局，以增加半导体集成电路中的集成度并稳定输出特性。 一方面通过布置第二高侧晶体管，二极管，第二电平移位电路和低端晶体管，第一高侧晶体管，第一电平移位电路和预置电路来形成三元电路， 驱动器，使得每个单元格排列成一行，并且输出接合焊盘放置在第二高侧晶体管和低侧晶体管之间，其中第一电平移位电路的单元宽度为第二电平 移位电路和预驱动器对应于低侧晶体管的单元宽度。
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公开(公告)号：US07989964B2
公开(公告)日：2011-08-02
申请号：US12094494
申请日：2006-09-29
CPC分类号： H01L27/12 , G09G3/296 , H01L24/06 , H01L24/49 , H01L27/0207 , H01L27/11898 , H01L2224/05554 , H01L2224/06179 , H01L2224/49179 , H01L2924/00014 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/3011 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： On a semiconductor chip in a semiconductor integrated circuit, a plurality of circuit cells each of which has a pad are formed along a first chip side of the semiconductor chip. Among the plurality of circuit cells, one or more circuit cells at least in the vicinity of an end portion on the first chip side are arranged having a steplike shift in a direction apart from the first chip side with decreasing distance from the center portion to the end portion on the first chip side.
摘要翻译： 在半导体集成电路中的半导体芯片上，沿着半导体芯片的第一芯片侧形成有具有焊盘的多个电路单元。 在多个电路单元中，至少在第一芯片侧的端部附近的一个或多个电路单元被布置成沿着与第一芯片侧分开的方向具有阶梯状移位，其中心部分到中间部分的距离减小 第一芯片侧的端部。
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公开(公告)号：US07323923B2
公开(公告)日：2008-01-29
申请号：US11211638
申请日：2005-08-26
IPC分类号： H03L5/00
CPC分类号： H03K3/356113 , G09G3/296 , G09G2330/04 , H03K3/012 , H03K19/0013
摘要： A driver circuit is provided for preventing generation of a pass-through current in a CMOS output unit even if a power supply voltage VDD supplied from a low voltage power supply drops below a recommended operating power supply voltage. The driver circuit includes a level shift unit having PMOS transistors and NMOS transistors, and a CMOS output unit having a PMOS transistor and an NMOS transistor. The source, drain and gate of one PMOS transistor are respectively connected to a high voltage power supply, a first contact and a second contact. The source, drain and gate of a second PMOS transistor are respectively connected to a high voltage power supply, the second contact and the first contact. The source of one NMOS transistor is grounded, the drain thereof is connected to the first contact, and the gate thereof receives a low voltage signal. The source of a second NMOS transistor is grounded, the drain thereof is connected to the second contact, and the gate thereof receives a low voltage signal. In this driver circuit, the driving current of the one PMOS transistor is higher than the driving current of the one NMOS transistor.
摘要翻译： 即使从低电压电源提供的电源电压VDD低于推荐的工作电源电压，也提供用于防止在CMOS输出单元中产生通过电流的驱动电路。 驱动器电路包括具有PMOS晶体管和NMOS晶体管的电平移位单元和具有PMOS晶体管和NMOS晶体管的CMOS输出单元。 一个PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第一触点和第二触点。 第二PMOS晶体管的源极，漏极和栅极分别连接到高压电源，第二触点和第一触点。 一个NMOS晶体管的源极接地，其漏极连接到第一触点，其栅极接收低电压信号。 第二NMOS晶体管的源极接地，其漏极连接到第二触点，并且其栅极接收低电压信号。 在该驱动电路中，一个PMOS晶体管的驱动电流高于一个NMOS晶体管的驱动电流。
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公开(公告)号：US20070273412A1
公开(公告)日：2007-11-29
申请号：US11802635
申请日：2007-05-24
IPC分类号： H03B1/00
CPC分类号： G09G3/296 , G09G3/293 , G09G2310/0275 , G09G2330/06
摘要： A drive voltage supply circuit has a first wire line, a second wire line, a first drive circuit, a plurality of second drive circuits, a control circuit for driving the first drive circuit and the plurality of second drive circuits, and an impedance element connected between the first wire line and each of output terminals.
摘要翻译： 驱动电压供给电路具有第一有线线路，第二线路线路，第一驱动电路，多个第二驱动电路，用于驱动第一驱动电路和多个第二驱动电路的控制电路，以及连接有阻抗元件的阻抗元件 在第一线路和每个输出端子之间。
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