公开(公告)号：US20070020534A1

公开(公告)日：2007-01-25

申请号：US11489477

申请日：2006-07-20

申请人： Hiroki Yoshikawa ,  Hiroshi Kubota ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Tamotsu Maruyama ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Hiroshi Kubota ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Tamotsu Maruyama ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： B32B9/00 ,  B32B17/10 ,  B32B17/06 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/54 ,  G03F1/58 ,  Y10T428/24917 ,  Y10T428/31616

摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.

摘要翻译： 在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。 遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。 此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度，每单位厚度的光密度（OD）为0.025nm ^{-1 。 在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。}

公开(公告)号：US07771893B2

公开(公告)日：2010-08-10

申请号：US11489477

申请日：2006-07-20

申请人： Hiroki Yoshikawa ,  Hiroshi Kubota ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Tamotsu Maruyama ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Hiroshi Kubota ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Tamotsu Maruyama ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  G03F1/46 ,  G03F1/54 ,  G03F1/58 ,  Y10T428/24917 ,  Y10T428/31616

摘要： A light-shielding film for exposure light is formed on one principal plane of a transparent substrate made of quartz or the like that serves as a photomask substrate. The light-shielding film can serve not only as the so-called “light-shielding film” but also as an anti-reflection film. In addition, the light-shielding film has a total thickness of 100 nm or less, 70% or more of which is accounted for by the thickness of a chromium compound that has an optical density (OD) per unit thickness of 0.025 nm−1 for light having a wavelength of 450 nm. In the case where the photomask blank is used for fabricating a mask designed for ArF exposure, the thickness and composition of the light-shielding film are selected in such a manner that the OD of the light-shielding film is 1.2 to 2.3 for 193 or 248 nm wavelength light.

摘要翻译： 在作为光掩模基板的石英等的透明基板的一个主面上形成曝光用遮光膜。 遮光膜不仅可以用作所谓的“遮光膜”，而且可以用作抗反射膜。 此外，遮光膜的总厚度为100nm以下，其中70％以上的铬化合物的厚度为0.025nm-1，每单位厚度的光密度（OD） 对于波长为450nm的光。 在光掩模坯料用于制造用于ArF曝光的掩模的情况下，遮光膜的厚度和组成选择为使得遮光膜的OD为193或193的屏蔽膜的OD为1.2至2.3 248 nm波长的光。

公开(公告)号：US07618753B2

公开(公告)日：2009-11-17

申请号：US11662479

申请日：2005-08-10

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： C23F4/00 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).

摘要翻译： 在光掩模基板的一个主表面上设置金属膜作为遮光层。 通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基 干蚀刻（F-干蚀刻）。 在遮光层上，作为抗反射层的金属化合物膜。 金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻 蚀刻（基于F）。

公开(公告)号：US20070259276A1

公开(公告)日：2007-11-08

申请号：US11662479

申请日：2005-08-10

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/08 ,  C23F4/00 ,  G03F1/14 ,  H01L21/027

CPC分类号： C23F4/00 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).

摘要翻译： 在光掩模基板的一个主表面上设置金属膜作为遮光层。 通过含有氧（（Cl + O）基干蚀刻）的基于氯的干蚀刻，不能基本上蚀刻金属膜，并且可以通过不含氧的氯基干法蚀刻（基于Cl的干蚀刻）和氟基 干蚀刻（F-干蚀刻）。 在遮光层上，作为抗反射层的金属化合物膜。 金属化合物膜不能通过不含氧（Cl基）的氯基干蚀刻基本上被蚀刻，并且可以通过含氧（（Cl + O）基）的氯基干蚀刻和氟基干法中的至少一种进行蚀刻 蚀刻（基于F）。

公开(公告)号：US07625676B2

公开(公告)日：2009-12-01

申请号：US11255135

申请日：2005-10-21

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

IPC分类号： G03F1/00 ,  B32B17/00

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  Y10T428/31616

摘要： A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

摘要翻译： 在光学透明基板的一个主平面上形成可遮光膜，并且可遮光膜具有覆盖在第一可遮光膜上的第一可遮光膜和第二可遮光膜。 第一可遮光膜是通过氟基（F系）干蚀刻基本上不被蚀刻的膜，主要由氧化铬，氮化铬，氮氧化铬等构成。 第二可遮光膜是主要由可以通过F-基干蚀刻蚀刻的含硅化合物组成的膜，例如氧化硅，氮化硅，氮氧化硅，硅/过渡金属氧化物，硅/ 过渡金属氮化物或硅/过渡金属氮氧化物。

公开(公告)号：US20060088774A1

公开(公告)日：2006-04-27

申请号：US11255135

申请日：2005-10-21

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Yoshinori Kinase ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Yuichi Fukushima

IPC分类号： C23F1/00 ,  B32B9/00 ,  C03C25/68 ,  B32B17/06 ,  C03C15/00 ,  G03F1/00 ,  B44C1/22

CPC分类号： G03F1/32 ,  G03F1/54 ,  G03F1/58 ,  G03F1/80 ,  Y10T428/31616

摘要： A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

公开(公告)号：US07556892B2

公开(公告)日：2009-07-07

申请号：US11093295

申请日：2005-03-30

申请人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

发明人： Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Mikio Takagi ,  Yuichi Fukushima ,  Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/32 ,  Y10T428/31616

摘要： In a halftone phase shift mask blank comprising a substrate, a light absorbing film, and a phase shifter film, the light absorbing film contains a metal element of Group 4A in a distribution having a higher metal element content in an upper region than in a lower region. Also provided is a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film of a single layer or multiple layers having a preselected phase difference and transmittance, wherein at least one layer of the halftone phase shift film contains at least 90 atom % of silicon and a plurality of metal elements, typically Mo and Zr or Hf.

摘要翻译： 在包括基板，光吸收膜和移相膜的半色调相移掩模坯料中，光吸收膜在上部区域中具有比在下部的金属元素含量高的分布中的4A族金属元素 地区。 还提供了一种半色调相移掩模坯料，其包括透明基板和具有预选相位差和透射率的单层或多层的半色调相移膜，其中至少一层半色调相移膜含有至少90个原子 硅和多个金属元素，通常为Mo和Zr或Hf。

公开(公告)号：US07598004B2

公开(公告)日：2009-10-06

申请号：US11093297

申请日：2005-03-30

申请人： Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga ,  Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Yuichi Fukushima

发明人： Hiroki Yoshikawa ,  Toshinobu Ishihara ,  Satoshi Okazaki ,  Yukio Inazuki ,  Tadashi Saga ,  Kimihiro Okada ,  Masahide Iwakata ,  Takashi Haraguchi ,  Yuichi Fukushima

IPC分类号： G03F1/00 ,  C25B11/00

CPC分类号： G03F1/32 ,  C23C14/06 ,  C23C14/3414 ,  C23C14/3464

摘要： For the manufacture of a halftone phase shift mask blank comprising a transparent substrate and a translucent film of one or more layers having a controlled phase and transmittance, at least one layer of the translucent film comprising Si, Mo and Zr at the same time, a target comprising at least Zr and Mo in a molar ratio Zr/Mo between 0.05 and 5 is useful.

摘要翻译： 为了制造包括透明基板和具有受控相位和透射率的一层或多层的半透明膜的半色调相移掩模坯料，同时至少一层包括Si，Mo和Zr的半透明膜， 包含Zr和Mo的摩尔比在0.05和5之间的至少Zr和Mo是有用的。

公开(公告)号：US07691546B2

公开(公告)日：2010-04-06

申请号：US11662183

申请日：2005-09-08

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。

公开(公告)号：US20080063950A1

公开(公告)日：2008-03-13

申请号：US11662183

申请日：2005-09-08

申请人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

发明人： Hiroki Yoshikawa ,  Yukio Inazuki ,  Satoshi Okazaki ,  Takashi Haraguchi ,  Masahide Iwakata ,  Mikio Takagi ,  Yuichi Fukushima ,  Tadashi Saga

IPC分类号： G03F1/00

CPC分类号： G03F1/46 ,  G03F1/58 ,  G03F1/68

摘要： A photomask blank to be used as a material for a photomask is provided with a mask pattern having a transparent area and an effectively opaque area to exposure light on a transparent substrate. On the transparent board, one or more layers of light shielding films are formed with or without other film (A) in between, at least one layer (B) which constitutes the light shielding film includes silicon and a transition metal as main component, and a molar ratio of silicon to the transition metal is silicon:metal=4-15:1 (atomic ratio). The photomask provided with the mask pattern having the transparent area and the effectively opaque area to exposure light on the transparent board is also provided.

摘要翻译： 用作光掩模材料的光掩模坯料设置有对透明基板上的曝光光具有透明区域和有效不透明区域的掩模图案。 在透明板上，形成有一层或多层遮光膜，其中有或没有其它膜（A），构成遮光膜的至少一层（B）包括硅和过渡金属作为主要成分，以及 硅与过渡金属的摩尔比为硅：金属= 4-15:1（原子比）。 还提供了具有掩模图案的光掩模，该掩模图案具有透明区域和透明板上曝光光线的有效不透明区域。