摘要:
A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1-bB1-aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a≦0.3; and b satisfies 0.025≦b≦0.15.
摘要翻译:提供具有良好的压电性能的压电膜。 压电膜由以下通式表示:A 1-b B 1-a X a O 3 3 / >其中A含有Pb; B是Zr和Ti中的至少一种; X是V,Nb,Ta,Cr,Mo和W中的至少一种; a满足0.05 <= a <= 0.3; 并且b满足0.025≤b≤0.15。
摘要:
A piezoelectric film is provided having good piezoelectric properties. The piezoelectric film is represented by the following general formula: A1−bB1−aXaO3 wherein A contains Pb; B is at least one of Zr and Ti; X is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a≦0.3; and b satisfies 0.025≦b≦0.15.
摘要翻译:提供具有良好的压电性能的压电膜。 压电膜由以下通式表示:A 1-b B 1-a X a O 3 3 / >其中A含有Pb; B是Zr和Ti中的至少一种; X是V,Nb,Ta,Cr,Mo和W中的至少一种; a满足0.05 <= a <= 0.3; 并且b满足0.025≤b≤0.15。
摘要:
A piezoelectric film is provided that is represented by the following general formula: Pb1-b[((X1/3Nb2/3)1-cB′c)1-aYa]O3 wherein X is at least one of Mg, Zn and Ni; B′ is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a
摘要翻译:提供了由以下通式表示的压电膜:Pb 1-b [((X 1/3 Nb 2/3) )1-c B'C 1)a-1-a a a a 3 a / 3 >其中X是Mg,Zn和Ni中的至少一种; B'是Zr,Ti和Hf中的至少一种; Y是V,Nb,Ta,Cr,Mo和W中的至少一种; a满足0.05 <= a <0.30; b满足0.025 <= b <= 0.15; 当X为Mg时,c满足0.25 <= c <= 0.35; 当X为Ni时,c满足0.30 <= c <0.40; 当X为Zn时,c满足0.05 <= c <0.15。
摘要:
A piezoelectric film is provided that is represented by the following general formula: Pb1−b[((X1/3Nb2/3)1−cB′c)1−aYa]O3 wherein X is at least one of Mg, Zn and Ni; B′ is at least one of Zr, Ti and Hf; Y is at least one of V, Nb, Ta, Cr, Mo and W; a satisfies 0.05≦a
摘要翻译:提供了由以下通式表示的压电膜:Pb 1-b [((X 1/3 Nb 2/3) )1-c B'C 1)a-1-a a a a 3 a / 3 >其中X是Mg,Zn和Ni中的至少一种; B'是Zr,Ti和Hf中的至少一种; Y是V,Nb,Ta,Cr,Mo和W中的至少一种; a满足0.05 <= a <0.30; b满足0.025 <= b <= 0.15; 当X为Mg时,c满足0.25 <= c <= 0.35; 当X为Ni时,c满足0.30 <= c <0.40; 当X为Zn时,c满足0.05 <= c <0.15。
摘要:
A ferroelectric film is provided that is expressed by a general formula of A1-bB1-aXaO3, wherein: A includes Pb; B is composed of at least one of Zr and Ti; X is composed of at least one of V, Nb, Ta, Cr, Mo and W; a is in a range of 0.05≦a≦0.3; and b is in a range of 0.025≦b≦0.15.
摘要翻译:提供一种铁电薄膜,其由下列通式表示:A 1-b B 1-a X a O 3 O 3, / SUB>,其中:A包括Pb; B由Zr和Ti中的至少一种构成; X由V,Nb,Ta,Cr,Mo和W中的至少一种构成; a在0.05 <= a <= 0.3的范围内; b在0.025≤b≤0.15的范围内。
摘要:
A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要:
A ferroelectric film wherein 5 to 40 mol % in total of at least one of Nb, V, and W is included in the B site of a Pb(Zr,Ti)O3 ferroelectric which includes at least four-fold coordinated Si4+ or Ge4+ in the A site ion of a ferroelectric perovskite material in an amount of 1% or more. This enables to significantly improve reliability of the ferroelectric film.
摘要:
An insulating target material for obtaining a conductive complex oxide film represented by a general formula ABO3, the insulating target material including an oxide of an element A, an oxide of an element B, and at least one of an Si compound and a Ge compound.
摘要:
A piezoelectric device includes: a substrate; a first conductive layer formed over the substrate, the first conductive layer including at least one buffer layer formed of a (001) preferentially oriented lanthanum-based layered perovskite compound; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.
摘要:
A piezoelectric device including: a substrate; a first conductive layer formed over the substrate, the first conductive layer including a conductive oxide layer formed of a (001) preferentially oriented lanthanum nickelate, and the lanthanum nickelate having oxygen deficiency; a piezoelectric layer formed over the first conductive layer and including a piezoelectric having a perovskite structure; and a second conductive layer electrically connected with the piezoelectric layer.