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    Display device, manufacturing method thereof, and television set
    5.
    发明授权
    Display device, manufacturing method thereof, and television set 有权
    显示装置及其制造方法以及电视机

    公开(公告)号：US07564058B2

    公开(公告)日：2009-07-21

    申请号：US11187988

    申请日：2005-07-25

    申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Shinji Maekawa ,  Osamu Nakamura ,  Tatsuya Honda ,  Gen Fujii ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L27/14

    CPC分类号： H01L21/02667 ,  G02F1/1368 ,  G02F2202/104 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/124 ,  H01L27/1277 ,  H01L27/1292 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3262 ,  H01L27/3276 ,  H01L51/56

    摘要： A manufacturing method of a display device having TFTs capable of high-speed operation with few variations of threshold voltage is provided, in which materials are used with high efficiency and a small number of photomasks is required. The display device of the invention comprises a gate electrode layer and a pixel electrode layer formed over an insulating surface, a gate insulating layer formed over the gate electrode layer, a crystalline semiconductor layer formed over the gate insulating layer, a semiconductor layer having one conductivity type formed in contact with the crystalline semiconductor layer, a source electrode layer and a drain electrode layer formed in contact with the semiconductor layer having one conductivity type, an insulating later formed over the source electrode layer, the drain electrode layer, and the pixel electrode layer, a first opening formed in the insulating layer to reach the source electrode layer or the drain electrode layer, a second opening formed in the gate insulating layer and the insulating layer to reach the pixel electrode layer, and a wiring layer formed in the first opening and the second opening to electrically connect the source electrode layer or the drain electrode layer to the pixel electrode layer.

    摘要翻译： 提供了具有能够以极小的阈值电压变化进行高速运行的TFT的显示装置的制造方法，其中以高效率使用材料并且需要少量的光掩模。 本发明的显示装置包括形成在绝缘表面上的栅极电极层和像素电极层，形成在栅极电极层上的栅极绝缘层，形成在栅极绝缘层上的结晶半导体层，具有一个导电性的半导体层 形成为与结晶半导体层接触的类型，源电极层和漏极电极层，形成为与具有一种导电类型的半导体层接触，在源极电极层，漏极电极层和像素电极之后形成绝缘体 在所述绝缘层中形成的第一开口到达所述源极电极层或所述漏极电极层，形成在所述栅极绝缘层和所述绝缘层中的第二开口到达所述像素电极层;以及布线层， 开口和第二开口以电连接源极电极层或漏极电极 呃到像素电极层。

    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region
    6.
    发明授权
    Method of fabricating a semiconductor device including separately forming a second semiconductor film containing an impurity element over the first semiconductor region 有权
    制造半导体器件的方法包括在第一半导体区域上分别形成含有杂质元素的第二半导体膜

    公开(公告)号：US07648861B2

    公开(公告)日：2010-01-19

    申请号：US11193513

    申请日：2005-08-01

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

    摘要： The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials.According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

    摘要翻译： 本发明提供一种制造半导体器件的方法，该半导体器件具有能够高速操作的反交错TFT，其阈值变化很小。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 根据本发明，通过形成反交错的TFT来制造半导体器件，该TFT通过使用高耐热材料形成栅电极，沉积非晶半导体膜，向非晶半导体膜中加入催化元素并加热 非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，通过利用部分形成半导体区域 形成与半导体区域电连接的源电极和漏电极，形成与栅电极连接的栅极布线。

    Television, electronic apparatus, and method of fabricating semiconductor device
    8.
    发明申请
    Television, electronic apparatus, and method of fabricating semiconductor device 有权
    电视机，电子设备以及制造半导体器件的方法

    公开(公告)号：US20060189047A1

    公开(公告)日：2006-08-24

    申请号：US11193513

    申请日：2005-08-01

    申请人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Shinji Maekawa ,  Tatsuya Honda ,  Hironobu Shoji ,  Osamu Nakamura ,  Yukie Suzuki ,  Ikuko Kawamata

    IPC分类号： H01L21/84

    CPC分类号： H01L27/1277 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/1288

    摘要： [Object] The invention provides a method of fabricating a semiconductor device having an inversely staggered TFT capable of high-speed operation, which has few variations of the threshold. In addition, the invention provides a method of fabricating a semiconductor device with high throughput where the cost reduction is achieved with few materials. [Means for Solving the Problem] According to the invention, a semiconductor device is fabricated by forming an inversely staggered TFT which is obtained by forming a gate electrode using a highly heat-resistant material, depositing an amorphous semiconductor film, adding a catalytic element into the amorphous semiconductor film and heating the amorphous semiconductor film to form a crystalline semiconductor film, forming a layer containing a donor element or a rare gas element over the crystalline semiconductor film and heating the layer to remove the catalytic element from the crystalline semiconductor film, forming a semiconductor region by utilizing a part of the crystalline semiconductor film, forming a source electrode and a drain electrode to be electrically connected to the semiconductor region, and forming a gate wiring to be connected to the gate electrode.

    摘要翻译： 本发明提供了一种制造具有能够高速操作的反交错TFT的半导体器件的方法，其具有极小的阈值变化。 此外，本发明提供了一种制造具有高产量的半导体器件的方法，其中通过少量材料实现成本降低。 解决问题的手段根据本发明，通过形成逆交错TFT来制造半导体器件，该TFT是使用高耐热材料形成栅电极，沉积非晶半导体膜，将催化元素添加到 非晶半导体膜并加热非晶半导体膜以形成晶体半导体膜，在结晶半导体膜上形成包含施主元素或稀有气体元素的层，并加热该层从结晶半导体膜除去催化元素，形成 通过利用晶体半导体膜的一部分形成半导体区域，形成与半导体区域电连接的源电极和漏电极，以及形成与栅电极连接的栅极布线。

    Method for manufacturing display device
    9.
    发明授权
    Method for manufacturing display device 有权
    显示装置制造方法

    公开(公告)号：US08048473B2

    公开(公告)日：2011-11-01

    申请号：US11823410

    申请日：2007-06-27

    申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    IPC分类号： B05D5/08 ,  H01B13/00 ,  C23F1/00

    CPC分类号： H01L27/1214 ,  H01L21/31105 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1288 ,  H01L27/1292 ,  Y02P80/30

    摘要： When a mask layer is formed, a first liquid composition containing a mask-layer-forming material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern) to form a first mask layer having a frame shape. A second liquid composition containing a mask-layer-forming material is applied so as to fill a space inside the first mask layer having a frame shape to form a second mask layer. The first mask layer and the second mask layer are formed to be in contact with each other, and the first mask layer is formed to surround the second mask layer. Therefore, the first mask layer and the second mask layer can be used as one continuous mask layer.

    摘要翻译： 当形成掩模层时，将含有掩模层形成材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分），以形成 第一掩模层具有框架形状。 涂布含有掩模层形成材料的第二液体组合物，以填充具有框架形状的第一掩模层内的空间，以形成第二掩模层。 第一掩模层和第二掩模层形成为彼此接触，并且第一掩模层形成为围绕第二掩模层。 因此，第一掩模层和第二掩模层可以用作一个连续掩模层。

    Method for manufacturing a semiconductor device
    10.
    发明授权
    Method for manufacturing a semiconductor device 有权
    半导体器件的制造方法

    公开(公告)号：US07768617B2

    公开(公告)日：2010-08-03

    申请号：US11823095

    申请日：2007-06-26

    申请人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    发明人： Shunpei Yamazaki ,  Hironobu Shoji ,  Ikuko Kawamata

    IPC分类号： G02F1/1343 ,  B05D5/00 ,  B05D1/32 ,  B05D7/22

    CPC分类号： H01L21/76801 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/124 ,  H01L27/1285 ,  H01L27/1292 ,  H01L2924/0002 ,  H01L2924/00

    摘要： When a conductive layer is formed, a first liquid composition containing a conductive material is applied on an outer side of a pattern that is desired to be formed (corresponding to a contour or an edge portion of a pattern), and a first conductive layer (insulating layer) having a frame-shape is formed. A second liquid composition containing a conductive material is applied so as to fill a space inside the first conductive layer having a frame-shape, whereby a second conductive layer is formed. The first conductive layer and the second conductive layer are formed so as to be in contact with each other, and the first conductive layer is formed so as to surround the second conductive layer. Therefore, the first conductive layer and the second conductive layer can be used as one continuous conductive layer.

    摘要翻译： 当形成导电层时，将含有导电材料的第一液体组合物施加在期望形成的图案的外侧（对应于图案的轮廓或边缘部分）和第一导电层（ 绝缘层）形成。 涂布含有导电材料的第二液体组合物，以填充具有框架形状的第一导电层内的空间，由此形成第二导电层。 第一导电层和第二导电层形成为彼此接触，并且第一导电层形成为围绕第二导电层。 因此，第一导电层和第二导电层可以用作一个连续导电层。