公开(公告)号：US08786090B2

公开(公告)日：2014-07-22

申请号：US12312907

申请日：2007-11-27

申请人： Hiroshi Gotou ,  Katsufumi Tomihisa ,  Aya Hino ,  Hiroyuki Okuno ,  Junichi Nakai ,  Nobuyuki Kawakami ,  Mototaka Ochi

发明人： Hiroshi Gotou ,  Katsufumi Tomihisa ,  Aya Hino ,  Hiroyuki Okuno ,  Junichi Nakai ,  Nobuyuki Kawakami ,  Mototaka Ochi

IPC分类号： H01L29/43

CPC分类号： H01L29/4908 ,  H01L23/53219 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.

摘要翻译： 本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置和显示装置的溅射靶。 对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高， 接触电阻率低，优选干蚀刻性也优异。

公开(公告)号：US20100065847A1

公开(公告)日：2010-03-18

申请号：US12312907

申请日：2007-11-27

申请人： Hiroshi Gotou ,  Katsufumi Tomihisa ,  Aya Hino ,  Hiroyuki Okuno ,  Junichi Nakai ,  Nobuyuki Kawakami ,  Mototaka Ochi

发明人： Hiroshi Gotou ,  Katsufumi Tomihisa ,  Aya Hino ,  Hiroyuki Okuno ,  Junichi Nakai ,  Nobuyuki Kawakami ,  Mototaka Ochi

IPC分类号： H01L33/00 ,  H01B5/00 ,  C23C14/34

CPC分类号： H01L29/4908 ,  H01L23/53219 ,  H01L27/124 ,  H01L29/458 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention provides an Al alloy film for a display device, to be directly connected to a conductive oxide film on a substrate, the Al alloy film comprising Ge in an amount of 0.05 to 0.5 at %, and comprising Gd and/or La in a total amount of 0.05 to 0.45 at %, a display device using the same, and a sputtering target for the display device. For the Al alloy film of the present invention, even when a barrier metal is not provided, and a conductive oxide film and the Al alloy film are directly connected, the adhesion between the conductive oxide film and the Al alloy film is high, and the contact resistivity is low, and preferably, the dry etching property is also excellent.

摘要翻译： 本发明提供一种用于显示装置的Al合金膜，其直接连接到基板上的导电氧化物膜，所述Al合金膜包含0.05至0.5原子％的Ge并且包含Gd和/或La 总量为0.05〜0.45at％，使用该显示装置的显示装置以及显示装置的溅射靶。 对于本发明的Al合金膜，即使没有设置阻挡金属，并且导电氧化物膜和Al合金膜直接连接，导电氧化物膜和Al合金膜之间的粘合力高， 接触电阻率低，优选干蚀刻性也优异。

公开(公告)号：US08217397B2

公开(公告)日：2012-07-10

申请号：US12812913

申请日：2009-01-15

申请人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

发明人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036

CPC分类号： H01L29/458

摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.

摘要翻译： 本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。 本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成 并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜 晶体管与半导体层1直接连接。

公开(公告)号：US20100295053A1

公开(公告)日：2010-11-25

申请号：US12812913

申请日：2009-01-15

申请人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

发明人： Mototaka Ochi ,  Nobuyuki Kawakami ,  Katsufumi Tomihisa ,  Hiroshi Goto

IPC分类号： H01L33/00 ,  H01L29/786

CPC分类号： H01L29/458

摘要： The present invention provides a thin film transistor substrate and a display device in which a decrease in the dry etching rate of a source electrode and drain electrode is not caused; no etching residues are generated; and a barrier metal can be eliminated between a semiconductor layer and metal wires such as the source and drain electrodes. The present invention is a thin film transistor substrate having a semiconductor layer 1, a source electrode 2, a drain electrode 3, and a transparent conductive film 4, in which the source electrode 2 and drain electrode 3 are formed by patterning by means of dry etching and comprises an Al alloy thin film comprising 0.1 to 1.5 atom % of Si and/or Ge, 0.1 to 3.0 atom % of Ni and/or Co, and 0.1 to 0.5 atom % of La and/or Nd, and the thin film transistor is directly connected with the semiconductor layer 1.

摘要翻译： 本发明提供一种薄膜晶体管基板和显示装置，其中不会引起源电极和漏电极的干蚀刻速率的降低; 不产生蚀刻残留物; 并且可以在半导体层和诸如源极和漏极之类的金属线之间消除阻挡金属。 本发明是一种具有半导体层1，源电极2，漏电极3和透明导电膜4的薄膜晶体管基板，其中源电极2和漏电极3通过干式图案形成 并且包括包含0.1至1.5原子％的Si和/或Ge，0.1至3.0原子％的Ni和/或Co，以及0.1至0.5原子％的La和/或Nd的Al合金薄膜，并且薄膜 晶体管与半导体层1直接连接。

公开(公告)号：US07411298B2

公开(公告)日：2008-08-12

申请号：US11461907

申请日：2006-08-02

申请人： Nobuyuki Kawakami ,  Toshihiro Kugimiya ,  Hiroshi Gotoh ,  Katsufumi Tomihisa ,  Aya Hino

发明人： Nobuyuki Kawakami ,  Toshihiro Kugimiya ,  Hiroshi Gotoh ,  Katsufumi Tomihisa ,  Aya Hino

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.

摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

公开(公告)号：US20070040172A1

公开(公告)日：2007-02-22

申请号：US11461907

申请日：2006-08-02

申请人： Nobuyuki Kawakami ,  Toshihiro Kugimiya ,  Hiroshi Gotoh ,  Katsufumi Tomihisa ,  Aya Hino

发明人： Nobuyuki Kawakami ,  Toshihiro Kugimiya ,  Hiroshi Gotoh ,  Katsufumi Tomihisa ,  Aya Hino

IPC分类号： H01L29/04

CPC分类号： H01L29/4908 ,  H01L27/124 ,  H01L29/458 ,  H01L29/66765

摘要： A source/drain electrode is used in a thin-film transistor substrate containing a substrate, a thin-film transistor semiconductor layer, source/drain electrodes, and a transparent picture electrode. The source/drain electrode includes a nitrogen-containing layer and a thin film of pure aluminum or an aluminum alloy. Nitrogen of the nitrogen-containing layer binds to silicon of the thin-film transistor semiconductor layer, and the thin film of pure aluminum or aluminum alloy is connected to the thin-film transistor semiconductor layer through the nitrogen-containing layer.

摘要翻译： 在包含衬底，薄膜晶体管半导体层，源极/漏极和透明图像电极的薄膜晶体管衬底中使用源极/漏极。 源极/漏极包括含氮层和纯铝或铝合金薄膜。 含氮层的氮与薄膜晶体管半导体层的硅结合，纯铝或铝合金薄膜通过含氮层与薄膜晶体管半导体层连接。

公开(公告)号：US07994503B2

公开(公告)日：2011-08-09

申请号：US12517362

申请日：2007-12-04

申请人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

发明人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

IPC分类号： H01L29/04

CPC分类号： H01L21/32051 ,  C22C9/00 ,  C22C9/06 ,  C23C14/3414 ,  G02F2001/136295 ,  G02F2202/28 ,  H01B1/026 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film. The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.

摘要翻译： 本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险 玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。 本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。 布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

公开(公告)号：US20100012935A1

公开(公告)日：2010-01-21

申请号：US12517362

申请日：2007-12-04

申请人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

发明人： Aya Hino ,  Katsufumi Tomihisa ,  Hiroshi Gotou ,  Takashi Onishi

IPC分类号： H01L29/786 ,  H01L23/48 ,  C23C14/34

CPC分类号： H01L21/32051 ,  C22C9/00 ,  C22C9/06 ,  C23C14/3414 ,  G02F2001/136295 ,  G02F2202/28 ,  H01B1/026 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

摘要： An object of the present invention is to provide: a Cu alloy wiring film that makes it possible to use Cu having a low electrical resistivity as a wiring material, exhibit a high adhesiveness to a glass substrate, and avoid the danger of peel off from the glass substrate; a TFT element for a flat-panel display produced with the Cu alloy wiring film; and a Cu alloy sputtering target used for the deposition of the Cu alloy wiring film.The present invention is a wiring film 2 composing a TFT element 1 for a flat-panel display and a sputtering target used for the deposition of the film and the material comprises Cu as the main component and at least one element selected from the group consisting of Pt, Ir, Pd, and Sm by 0.01 to 0.5 atomic percent in total. The wiring film 2 is layered on a glass substrate 3 and further a transparent conductive film 5 is layered thereon while an insulating film 4 is interposed in between.

摘要翻译： 本发明的目的是提供：可以使用具有低电阻率的Cu作为布线材料的Cu合金布线膜，对玻璃基板表现出高粘合性，并且避免了从玻璃基板剥离的危险 玻璃基板; 用Cu合金布线膜制造的平板显示器用TFT元件; 以及用于沉积Cu合金布线膜的Cu合金溅射靶。 本发明是构成用于平板显示器的TFT元件1和用于沉积膜的溅射靶的布线膜2，并且该材料包括Cu作为主要成分和至少一种选自以下的元素： Pt，Ir，Pd和Sm总计为0.01〜0.5原子％。 布线膜2层叠在玻璃基板3上，另外，在其间插入有绝缘膜4，并且层叠透明导电膜5。

公开(公告)号：US08482189B2

公开(公告)日：2013-07-09

申请号：US13144716

申请日：2010-01-15

申请人： Hiroshi Goto ,  Aya Miki ,  Katsufumi Tomihisa ,  Mototaka Ochi ,  Takashi Onishi ,  Toshihiro Kugimiya

发明人： Hiroshi Goto ,  Aya Miki ,  Katsufumi Tomihisa ,  Mototaka Ochi ,  Takashi Onishi ,  Toshihiro Kugimiya

IPC分类号： H01L51/00

CPC分类号： H01L23/53238 ,  B32B15/01 ,  C22C9/00 ,  C23C14/025 ,  C23C14/14 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.

摘要翻译： 显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。 用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y） 选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X） 以Cu为主成分，电阻率比第一层（Y）低。 第一层（Y）与透明基板接触。

公开(公告)号：US20110273075A1

公开(公告)日：2011-11-10

申请号：US13144716

申请日：2010-01-15

申请人： Hiroshi Goto ,  Aya Miki ,  Katsufumi Tomihisa ,  Mototaka Ochi ,  Takashi Onishi ,  Toshihiro Kugimiya

发明人： Hiroshi Goto ,  Aya Miki ,  Katsufumi Tomihisa ,  Mototaka Ochi ,  Takashi Onishi ,  Toshihiro Kugimiya

IPC分类号： H01J1/48

CPC分类号： H01L23/53238 ,  B32B15/01 ,  C22C9/00 ,  C23C14/025 ,  C23C14/14 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L23/53233 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A display device is provided with a Cu alloy film having high adhesiveness to a transparent substrate and a low electrical resistivity. The Cu alloy film for the display device is directly brought into contact with the transparent substrate, and the Cu alloy film has the multilayer structure, which includes a first layer (Y) composed of a Cu alloy containing, in total, 2-20 atm % of at least one element selected from among a group composed of Zn, Ni, Ti, Al, Mg, Ca, W, Nb, and Mn, and a second layer (X) which is composed of pure Cu or substantially a Cu alloy having Cu as the main component and has an electrical resistivity lower than that of the first layer (Y). The first layer (Y) is brought into contact with the transparent substrate.

摘要翻译： 显示装置设置有对透明基板具有高粘附性和低电阻率的Cu合金膜。 用于显示装置的Cu合金膜直接与透明基板接触，并且Cu合金膜具有多层结构，其包括由总共为2-20atm的Cu合金构成的第一层（Y） 选自由Zn，Ni，Ti，Al，Mg，Ca，W，Nb和Mn组成的组中的至少一种元素的％，以及由纯Cu或基本上由Cu合金构成的第二层（X） 以Cu为主成分，电阻率比第一层（Y）低。 第一层（Y）与透明基板接触。