OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    OPTICAL SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    光学半导体器件及其制造方法

    公开(公告)号:US20110297987A1

    公开(公告)日:2011-12-08

    申请号:US13154999

    申请日:2011-06-07

    IPC分类号: H01L33/50

    摘要: According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

    摘要翻译: 根据一个实施例,光学半导体器件包括发光层,透明层,第一金属柱,第二金属柱和密封层。 发光层包括第一和第二主表面,第一和第二电极。 第二主表面是与第一主表面相对的表面,并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面,并且密封第一和第二金属柱,同时使第一和第二金属柱的端部露出。

    Semiconductor light emitting device
    6.
    发明授权
    Semiconductor light emitting device 失效
    半导体发光器件

    公开(公告)号:US08368089B2

    公开(公告)日:2013-02-05

    申请号:US12885777

    申请日:2010-09-20

    IPC分类号: H01L29/18 H01L33/00

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的,并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度,大于第一荧光体粒子的粒径。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    8.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 失效
    半导体发光器件

    公开(公告)号:US20110297969A1

    公开(公告)日:2011-12-08

    申请号:US12885777

    申请日:2010-09-20

    IPC分类号: H01L33/08 H01L33/26

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的,并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度,大于第一荧光体粒子的粒径。

    Semiconductor light-emitting device
    10.
    发明申请
    Semiconductor light-emitting device 审中-公开
    半导体发光装置

    公开(公告)号:US20060261354A1

    公开(公告)日:2006-11-23

    申请号:US11430966

    申请日:2006-05-10

    IPC分类号: H01L33/00

    CPC分类号: H01L33/20 H01L33/08

    摘要: A semiconductor light-emitting device includes a substrate having light transmission characteristics, a light emission layer on a surface side of the substrate, and which emits light when being energized, and a pair of electrodes to energize the light emission layer, wherein a surface of the substrate which is located opposite to the light emission layer is formed to include groove portion through which light generated from the light emission layer and then entering the substrate is emitted from the substrate.

    摘要翻译: 一种半导体发光器件包括具有光透射特性的衬底,在衬底的表面侧上的发光层,并且在被通电时发光;以及一对电极,用于激发发光层,其中, 与发光层相对的基板形成为包括从发光层产生的光然后进入基板的光从基板射出的槽部。