摘要:
A liquid fuel cell comprising a plurality of unit fuel cells each having a positive electrode (8) for reducing oxygen, a negative electrode (9) for oxidizing liquid fuel, and an electrolyte layer (10) interposed between the positive electrode (8) and the negative electrode (9), and a section (3) for storing liquid fuel (4), wherein power can be generated stably while reducing the size by arranging the plurality of unit fuel cells on the substantially same plane. Each electrolyte layer of the unit fuel cell preferably constitutes a continuous integrated electrolyte layer.
摘要:
A liquid fuel cell comprising a plurality of unit fuel cells each having a positive electrode (8) for reducing oxygen, a negative electrode (9) for oxidizing liquid fuel, and an electrolyte layer (10) interposed between the positive electrode (8) and the negative electrode (9), and a section (3) for storing liquid fuel (4), wherein power can be generated stably while reducing the size by arranging the plurality of unit fuel cells on the substantially same plane. Each electrolyte layer of the unit fuel cell preferably constitutes a continuous integrated electrolyte layer.
摘要:
An air-hydrogen battery with high energy density and satisfactory cycle characteristics is provided.The air-hydrogen battery includes: a positive electrode made of an air electrode; a negative electrode provided with a hydrogen-absorbing alloy; and a cation-exchange film or an anion-exchange film formed as an electrolyte between the positive electrode and the negative electrode, wherein a periphery of the hydrogen-absorbing alloy of the negative electrode is covered with an anion-exchange resin, whereby the contact area between the anion-exchange resin that functions as an electrolyte and the hydrogen-absorbing alloy is increased, and the utilization factor and resistance to corrosion of the hydrogen-absorbing alloy are enhanced.
摘要:
A hydrogen generating material of the present invention includes a metal material that reacts with water to generate hydrogen, and a heat generating material that reacts with water to generate heat and is a material other than the metal material. The heat generating material is unevenly distributed with respect to the metal material. The hydrogen generating material has a plurality of regions that differ in content of the heat generating material. The content of the heat generating material is preferably 30 wt % to 80 wt % in a region with the highest content of the heat generating material. A hydrogen generator of the present invention includes the hydrogen generating material and a vessel containing the hydrogen generating material. The vessel can accommodate another inner vessel.
摘要:
An optical fiber cable has: a cable portion having an optical fiber tape core wire that a plurality of optical fiber core wires are stacked in parallel, and a cable sheath formed on the plurality of optical fiber core wires; and mold-releasing sheets disposed in parallel with the optical fiber tape core wire. The mold-releasing sheets have an end portion extended from the end of the optical fiber tape core wire. An end of the optical fiber tape core wire is covered by the end portion of the mold-releasing sheet.
摘要:
In a semiconductor device of a polysilicon gate electrode structure having three or more different Fermi levels, a P type polysilicon having a lowest Fermi level is disposed on a first N type surface channel MOS transistor. A first N type polysilicon having a highest Fermi level is disposed on a second N type surface channel MOS transistor. A second N type polysilicon having an intermediate Fermi level between the highest and the lowest Fermi levels and doped with both an N type impurity and a P type impurity is disposed on a P channel MOS transistor.
摘要:
A DRAM of an open bit line structure has a cell area smaller than that of a DRAM of a folded bit line structure and is susceptible to noise. A conventional DRAM of an open bit line structure has a large bit line capacitance and is susceptible to noise or has a large cell area. There has been no DRAM of an open bit line structure having a small bit line capacitance, unsusceptible to noise and having a small cell area. The present invention forms capacitor lower electrode plug holes not aligned with bit lines to reduce bit line capacitance. Bit lines are formed in a small width, capacitor lower electrode plugs are dislocated from positions corresponding to the centers of the bit lines in directions away from the bit lines and the contacts are formed in a reduced diameter to avoid increasing the cell area. Thus a semiconductor storage device of an open bit line structure resistant to noise and having a small cell area is provided.
摘要:
A DRAM of an open bit line structure has a cell area smaller than that of a DRAM of a folded bit line structure and is susceptible to noise. A conventional DRAM of an open bit line structure has a large bit line capacitance and is susceptible to noise or has a large cell area. There has been no DRAM of an open bit line structure having a small bit line capacitance, unsusceptible to noise and having a small cell area. The present invention forms capacitor lower electrode plug holes not aligned with bit lines to reduce bit line capacitance. Bit lines are formed in a small width, capacitor lower electrode plugs are dislocated from positions corresponding to the centers of the bit lines in directions away from the bit lines and the contacts are formed in a reduced diameter to avoid increasing the cell area. Thus a semiconductor storage device of an open bit line structure resistant to noise and having a small cell area is provided.
摘要:
A battery unit (1) includes battery subunits (11, 12, 13) and a voltage monitoring circuit (30). The battery subunits (11, 12, 13) includes battery modules (110, 120, 130), each having a secondary battery cell (111, 121, 131) and a fuse (112, 122, 132) connected in series. The voltage monitoring circuit (30) monitors the voltage across the terminals of each of the battery subunits (11, 12, 13). Each of the battery subunits (11, 12, 13) includes one battery module or a plurality of battery modules (110, 120, 130) connected in parallel.
摘要:
Disclosed is a technique for reducing the leak current by reducing contamination of metal composing a polymetal gate of a MISFET. Of a polycrystalline silicon film, a WN film, a W film, and a cap insulating film formed on a gate insulating film on a p-type well (semiconductor substrate), the cap insulating film, the W film, and the WN film are etched and the over-etching of the polycrystalline silicon film below them is performed. Then, a sidewall film is formed on sidewalls of these films. Thereafter, after etching the polycrystalline silicon film with using the sidewall film as a mask, a thermal treatment is performed in an oxidation atmosphere, by which a light oxide film is formed on the sidewall of the polycrystalline silicon film. As a result, the contamination on the gate insulating film due to the W and the W oxide can be reduced, and also, the diffusion of these materials into the semiconductor substrate (p-type well) and the resultant increase of the leak current can be prevented.