公开(公告)号：US20110204400A1

公开(公告)日：2011-08-25

申请号：US13026631

申请日：2011-02-14

申请人： Hiroshi Koizumi ,  Yasuhide Okada ,  Junsei Yamabe ,  Naoaki Sakurai

发明人： Hiroshi Koizumi ,  Yasuhide Okada ,  Junsei Yamabe ,  Naoaki Sakurai

IPC分类号： H01L33/58 ,  H01L21/66 ,  H01L21/00

CPC分类号： H05B33/145 ,  H01L33/504 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2933/0041 ,  H05B33/10 ,  H01L2924/00014 ,  H01L2924/00

摘要： According to one embodiment, a light emitting device includes a package member, a light emitting element provided in the package member, a first phosphor layer and a second phosphor layer. A first phosphor layer is provided on the light emitting element and has a first phosphor. A second phosphor layer is provided on the first phosphor layer and has a second phosphor. A luminescent efficiency of the first phosphor is higher than a luminescent efficiency of the second phosphor.

摘要翻译： 根据一个实施例，发光器件包括封装构件，设置在封装构件中的发光元件，第一荧光体层和第二荧光体层。 第一荧光体层设置在发光元件上并具有第一荧光体。 第二荧光体层设置在第一荧光体层上并具有第二荧光体。 第一荧光体的发光效率高于第二荧光体的发光效率。

公开(公告)号：US20120235184A1

公开(公告)日：2012-09-20

申请号：US13419684

申请日：2012-03-14

申请人： Hiroshi KOIZUMI ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Hiroshi KOIZUMI ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L33/08 ,  H01L33/50

CPC分类号： H01L33/508 ,  H01L33/0079 ,  H01L33/504 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

摘要翻译： 根据一个实施例，半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

公开(公告)号：US09099619B2

公开(公告)日：2015-08-04

申请号：US13419684

申请日：2012-03-14

申请人： Hiroshi Koizumi ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Hiroshi Koizumi ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L29/20 ,  H01L21/00 ,  H01L33/50 ,  H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0079 ,  H01L33/504 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

摘要翻译： 根据一个实施例，半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

公开(公告)号：US20110297987A1

公开(公告)日：2011-12-08

申请号：US13154999

申请日：2011-06-07

申请人： Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

发明人： Hiroshi KOIZUMI ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa

IPC分类号： H01L33/50

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

摘要翻译： 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

公开(公告)号：US08754429B2

公开(公告)日：2014-06-17

申请号：US13154999

申请日：2011-06-07

申请人： Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

发明人： Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

摘要翻译： 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

公开(公告)号：US08399275B2

公开(公告)日：2013-03-19

申请号：US13153554

申请日：2011-06-06

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。

公开(公告)号：US08368089B2

公开(公告)日：2013-02-05

申请号：US12885777

申请日：2010-09-20

申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L29/18 ,  H01L33/00

CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

公开(公告)号：US20110300644A1

公开(公告)日：2011-12-08

申请号：US13153554

申请日：2011-06-06

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L21/66

CPC分类号： H01L33/508 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。

公开(公告)号：US20110297969A1

公开(公告)日：2011-12-08

申请号：US12885777

申请日：2010-09-20

申请人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Akihiro Kojima ,  Hiroshi Koizumi ,  Yoshiaki Sugizaki ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L33/08 ,  H01L33/26

CPC分类号： H01L33/50 ,  H01L33/46 ,  H01L33/486 ,  H01L33/58 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a transparent layer, and a fluorescent material layer. The transparent layer is provided on the first major surface of the semiconductor layer. The transparent layer is transparent with respect to light emitted by the light emitting layer and has a trench provided outside the outer circumference of the light emitting layer. The fluorescent material layer is provided in the trench and on the transparent layer. The fluorescent material layer includes a first fluorescent material particle provided in the trench and a second fluorescent material particle provided on the transparent layer. A particle size of the first fluorescent material particle is smaller than a width of the trench. A particle size of the second fluorescent material particle is larger than the width of the trench and larger than the particle size of the first fluorescent material particle.

摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，第一电极，第二电极，透明层和荧光材料层。 透明层设置在半导体层的第一主表面上。 透明层相对于由发光层发射的光是透明的，并且具有设置在发光层的外周外的沟槽。 荧光材料层设置在沟槽和透明层上。 荧光材料层包括设置在沟槽中的第一荧光材料颗粒和设置在透明层上的第二荧光材料颗粒。 第一荧光体粒子的粒径小于沟槽的宽度。 第二荧光体粒子的粒径大于沟槽的宽度，大于第一荧光体粒子的粒径。

公开(公告)号：US20060261354A1

公开(公告)日：2006-11-23

申请号：US11430966

申请日：2006-05-10

申请人： Yasuhide Okada ,  Takayoshi Fujii ,  Kazuo Horiuchi

发明人： Yasuhide Okada ,  Takayoshi Fujii ,  Kazuo Horiuchi

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/08

摘要： A semiconductor light-emitting device includes a substrate having light transmission characteristics, a light emission layer on a surface side of the substrate, and which emits light when being energized, and a pair of electrodes to energize the light emission layer, wherein a surface of the substrate which is located opposite to the light emission layer is formed to include groove portion through which light generated from the light emission layer and then entering the substrate is emitted from the substrate.

摘要翻译： 一种半导体发光器件包括具有光透射特性的衬底，在衬底的表面侧上的发光层，并且在被通电时发光;以及一对电极，用于激发发光层，其中， 与发光层相对的基板形成为包括从发光层产生的光然后进入基板的光从基板射出的槽部。