摘要:
A memory element is formed of a thin film transistor. The thin film transistor has a semiconductor layer, a source electrode electrically connected to the semiconductor layer, a drain electrode electrically connected to the semiconductor layer and formed separately from the source electrode, a gate electrode for controlling formation of a channel of the semiconductor layer, and a gate insulation film for isolating the gate electrode and the semiconductor layer from each other and causing a hysteresis in the relation between the drain current and the gate circuit. The insulation film is a silicon nitride film whose composition ratio of silicon to nitrogen is in a range of approx. 0.85 to 1.1. According to this invention, the relation between the gate voltage and the drain current can be set to have a hysteresis. Therefore, the thin film transistor can be used as a memory element. Further, according to this invention, data can be written, erased and read out by selectively applying an electric field to the gate insulation film. Therefore, the thin film transistor can be used as a memory element.
摘要:
A memory device includes a memory element composed of a first thin film transistor having a memory function, and a select element composed of a second thin film transistor for selecting the memory element. A gate insulation film of the first thin film transistor has a charge storage function. A gate insulation film of the second thin film transistor does not have any charge storage function. If a plurality of the memory devices are arranged in matrix form, this configuration can be used as E.sup.2 PROM. By forming the first and second thin film transistors simultaneously, it is possible to form the first and second thin film transistors easily in the simple manufacturing steps.
摘要:
A memory cell has a thin film memory transistor and a thin film selective transistor. The thin film memory transistor has a charge trapping structure and a positive-negative-charge occurrence structure. The charge trapping structure includes a first thin film semiconductor layer, an insulating memory gate layer formed on the first thin film semiconductor layer, and a memory gate electrode. The positive-negative-charge occurrence structure includes an impurity high density layer with a portion facing the memory gate electrode. The thin film selective transistor is coupled to the thin film memory transistor in a serial form and has an only n-channel occurrence structure which includes a second thin film semiconductor layer, an insulating selective gate layer formed on the second thin film semiconductor layer and being thicker than the insulating memory gate layer, and a selective gate electrode formed on said insulating selective gate layer.
摘要:
Disclosed is a high-definition display apparatus which allows a write current having an adequate value to flow. The display apparatus comprises a plurality of signal lines, a plurality of optical elements which presents display as a drive current equal in value to a write current flowing in the signal lines flows, and a current control driver which is connected to one ends of the signal lines, reduces the current value of a gradation signal by a current reduction ratio and lets the write current flow in the signal lines.
摘要:
An air conditioner includes an air conditioning unit, and three wiring lines for supplying power to the air conditioning unit. The three wiring lines are a pair of single phase AC power lines and an earth line which are to be connected to three source lines. The three source lines are a pair of single phase AC source lines and a ground line. The air conditioner also includes a detection unit including a detecting device that detects voltages between each of the AC power lines and the earth line, a conversion device that converts the voltages detected by the detecting device into logic level signals, a comparator that determines presence or absence of faulty connection between the three wiring lines and the three source lines by comparing the logic level signals obtained by the conversion device with reference logic level signals, and an output device that shows a result of determination made by the comparator.
摘要:
A phototransistor having a non-linear light vs. conductivity characteristics and an organic electroluminescent layer are sandwiched by a pair of electrodes, a predetermined voltage is applied to the pair of electrodes, and address light is irradiated on a phototransistor to let a current flow in the phototransistor, thus causing the electroluminescent layer to emit light. It is therefore possible to drive the device to present crosstalk-free gradation display with a high contrast ratio.
摘要:
A carrier-injection type organic electroluminescent device includes, provided on a substrate, a transparent anode electrode, and a hole transport layer containing hole-transporting poly(N-vinylcarbazole) and 2,5-bis(1-naphthyl)-oxadiazole, and 3-(2'-benzothiazoyl)-7-diethylaminocoumarin as a fluorescent material which absorbs light within a predetermined wavelength range and emits light having a longer wavelength. Further included are an electron transport layer containing an electron-transporting tris(8-quinolinolate)aluminum complex, and a cathode electrode. When a voltage is applied between the anode and the cathode, the fluorescent material absorbs light emitted by the recombination of electrons and holes, and emits visible light.
摘要:
A conveyor in a plastic working machine, wherein lower dies and upper dies for plastic working of a work in collaboration are disposed on a plurality of working stations, respectively, the stations being set at intervals along the direction in which the work is conveyed, arms each having a handling mechanism for holding the work are provided on transfer bars disposed sideway of the working stations for conveying the work in sequence among the working stations, the transfer bars are provided on both sides of each working station, the arms are bridged between both the transfer bars with both the ends borne on both the transfer bars movably back and forth in the conveying direction or fixed to both the transfer bars.
摘要:
A conveyor in a plastic working machine, wherein lower dies and upper dies for plastic working of a work in collaboration are disposed on a plurality of working stations, respectively, the stations being set at intervals along the direction in which the work is conveyed, arms each having a handling mechanism for holding the work are provided on transfer bars disposed sideway of the working stations for conveying the work in sequence among the working stations, the transfer bars are provided on both sides of each working station, the arms are bridged between both the transfer bars with both the ends borne on both the transfer bars movably back and forth in the conveying direction or fixed to both the transfer bars.
摘要:
An electrophoretic display device includes: first and second substrates; an electrophoretic layer which is interposed between the first and second substrates; and a third substrate which is disposed opposite the first substrate with the second substrate interposed therebetween, which is joined to the first substrate with a sealing member interposed therebetween, and which seals the electrophoretic layer with the second substrate interposed therebetween. The first and third substrates have extension sections extending with respect to the second substrate in a plan view. The sealing member fills a part of a gap between the extension section of the first substrate and the extension section of the third substrate, and the sealing member does not come into contact with an outer edge of the third substrate.