公开(公告)号：US08349074B2

公开(公告)日：2013-01-08

申请号：US13061586

申请日：2009-09-24

申请人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

发明人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

IPC分类号： C30B15/26

CPC分类号： C30B29/06 ,  C30B15/26 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

摘要翻译： 一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径 在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端 所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。 结果，直径检测精度提高。

公开(公告)号：US20110146564A1

公开(公告)日：2011-06-23

申请号：US13061586

申请日：2009-09-24

申请人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

发明人： Hiroshi Ohtsuna ,  Atsushi Iwasaki

IPC分类号： C30B15/26

CPC分类号： C30B29/06 ,  C30B15/26 ,  Y10T117/10 ,  Y10T117/1004 ,  Y10T117/1008 ,  Y10T117/1024 ,  Y10T117/1032

摘要： A method for detecting a diameter of a single crystal at the time of pulling the single crystal from a silicon melt contained in a crucible according to the Czochralski method, the method including at least: using two cameras placed equidistant from each other as a target diameter upon forming a straight-body portion of the single crystal and face both ends of the diameter of the single crystal in a growth point of the single crystal respectively, to separately capture both of the ends of the growth point of the single crystal from an outside of a furnace, the growth point being a contact point between the single crystal and a melt surface; and detecting the diameter of the single crystal on the basis of the captured images. As a result, diameter detection precision is improved.

摘要翻译： 一种用于根据切克劳斯基方法从包含在坩埚中的硅熔体中拉出单晶时的单晶直径的方法，所述方法至少包括：使用彼此等距离放置的两个相机作为目标直径 在形成单晶的直体部分并且分别在单晶的生长点处面对单晶直径的两端时，从外部单独地捕获单晶的生长点的两端 所述生长点是所述单晶和熔体表面之间的接触点; 并且基于所捕获的图像检测单晶的直径。 结果，直径检测精度提高。

公开(公告)号：US20130032083A1

公开(公告)日：2013-02-07

申请号：US13641999

申请日：2011-04-06

申请人： Katsuyuki Kitagawa ,  Atsushi Iwasaki ,  Hiroshi Ohtsuna

发明人： Katsuyuki Kitagawa ,  Atsushi Iwasaki ,  Hiroshi Ohtsuna

IPC分类号： C30B15/20 ,  C30B15/14

CPC分类号： C30B15/20 ,  C30B29/06 ,  Y10T117/1004

摘要： The present invention provides a single-crystal manufacturing apparatus comprising a chamber that accommodates a crucible containing a raw material melt; a pulling mechanism for pulling a single crystal; a heater for heating the raw material melt, the heater being movable upwardly and downwardly; and a temperature measurement means for measuring temperature of the heater, wherein the temperature measurement means is movable upwardly and downwardly in response to the upward and downward movement of the heater. The present invention provides a single-crystal manufacturing apparatus and a method for manufacturing a single crystal that can stably measure the heater temperature regardless of a change in operation conditions and hence stably control the heater temperature and the heater output, resulting in a stable operation.

摘要翻译： 本发明提供了一种单晶体制造装置，包括容纳含有原料熔融物的坩埚的室， 用于拉出单晶的拉动机构; 用于加热原料熔体的加热器，加热器可上下移动; 以及用于测量加热器的温度的温度测量装置，其中温度测量装置可响应于加热器的向上和向下运动而上下移动。 本发明提供一种可以稳定地测量加热器温度的单晶的单晶制造装置和方法，而与操作条件的变化无关，因此稳定地控制加热器温度和加热器的输出，导致稳定的操作。

公开(公告)号：US5138179A

公开(公告)日：1992-08-11

申请号：US685587

申请日：1991-03-29

申请人： Masahiko Baba ,  Hiroshi Ohtsuna

发明人： Masahiko Baba ,  Hiroshi Ohtsuna

IPC分类号： C30B15/26 ,  G01B11/08

CPC分类号： C30B15/26 ,  G01B11/08

摘要： Disclosed are a method of and a device for crystal diameter measurement in an apparatus for automatically controlling single crystal growth by the CZ technique. In the diameter measurement method, a growing region of a single crystal 32 is photographed by a camera 38, and an outer diamter Do of a luminous ring image 70 having a luminance above a reference value E is detected from a video signal supplied from the camera 38, the diameter Do thus detected being used for crystal diameter control. The crystal diameter measuring device comprises: a camera 38 for photographing a growing section of a single crystal 32 and supplying a video signal; devices for detecting a maximum video signal value with respect to one scanning line or more; a device for obtaining a reference value E corresponding to the above-mentioned maximum value; devices for binary-coding the video signal in comparison with the reference value E; and a device for detecting the outer diameter Do of a luminous image from a binary image obtained by the binary-coding.

公开(公告)号：US5183528A

公开(公告)日：1993-02-02

申请号：US661348

申请日：1991-02-28

申请人： Masahiko Baba ,  Hiroshi Ohtsuna

发明人： Masahiko Baba ,  Hiroshi Ohtsuna

IPC分类号： C30B15/20 ,  C30B15/22 ,  C30B15/26 ,  C30B29/06

CPC分类号： C30B15/22 ,  Y10T117/1008

摘要： A method for automatically controlling growing a single crystal neck portion by the CZ method, comprising the steps of pulling up a seed crystal (30) at 2 mm/min. for five minutes so as to grow a single crystal 32; next measuring a diameter of the lower end of the crystal; modifying an electric power for heating a melt based on the difference between the measured diameter and a reference value; waiting for five minutes; keeping the electric power constant for 10 minutes with controlling the pulling up speed so as to approach the diameter of the crystal to the reference value and with measuring the pulling up speed repeatedly; and next modifying the power based on the difference between the mean speed and a reference value. The last two steps are repeated alternatively.