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    SEMICONDUCTOR SUBSTRATE CLEANING METHOD
    2.
    发明申请
    SEMICONDUCTOR SUBSTRATE CLEANING METHOD 审中-公开
    半导体衬底清洗方法

    公开(公告)号：US20110230054A1

    公开(公告)日：2011-09-22

    申请号：US12841217

    申请日：2010-07-22

    申请人： Hiroshi TOMITA ,  Hisashi Okuchi ,  Minato Inukai ,  Hidekazu Hayashi ,  Yasuhito Yoshimizu

    发明人： Hiroshi TOMITA ,  Hisashi Okuchi ,  Minato Inukai ,  Hidekazu Hayashi ,  Yasuhito Yoshimizu

    IPC分类号： H01L21/3205 ,  B08B3/08 ,  B08B3/12

    CPC分类号： H01L21/02052 ,  H01L21/02057

    摘要： In one embodiment, a semiconductor substrate cleaning method is disclosed. The method can clean a semiconductor substrate by using a chemical of 80° C. or above. The method can rinse the semiconductor substrate by using pure water of 40° C. or above after the cleaning of the semiconductor substrate. The method can then rinse the semiconductor substrate by using pure water of 30° C. or below. In addition, the method can dry the semiconductor substrate.

    摘要翻译： 在一个实施例中，公开了半导体衬底清洗方法。 该方法可以使用80℃以上的化学物质来清洗半导体衬底。 该方法可以在清洁半导体衬底之后使用40℃以上的纯水冲洗半导体衬底。 然后，该方法可以通过使用30℃或更低的纯水冲洗半导体衬底。 此外，该方法可以干燥半导体衬底。

    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM
    5.
    发明申请
    SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND STORAGE MEDIUM 审中-公开
    基板处理方法，基板处理装置和存储介质

    公开(公告)号：US20120304485A1

    公开(公告)日：2012-12-06

    申请号：US13482318

    申请日：2012-05-29

    申请人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

    发明人： Hidekazu Hayashi ,  Yohei Sato ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Kazuyuki Mitsuoka ,  Mitsuaki Iwashita ,  Takehiko Orii ,  Gen You ,  Hiroki Ohno ,  Takayuki Toshima

    IPC分类号： F26B7/00

    CPC分类号： H01L21/67028 ,  B08B7/0021 ,  H01L21/02057 ,  H01L21/02101

    摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

    摘要翻译： 一种基板处理方法和装置，其能够在相当短的时间内去除已经进入具有形成在基板中的凹部的三维图案的抗干燥液体。 基板处理方法包括以下步骤：将具有形成在表面上的三维图案的基板运送到处理容器中，所述图案被已经进入图案的凹部的防干燥液体覆盖; 加热基板并将高压状态的加压气体或流体供给到处理容器中，从而在防干燥液体蒸发之前在处理容器中形成高压气氛，使其形成图案塌陷， 将防干燥液体保持在高压状态，同时将液体保持在图案的凹部中; 然后从处理容器中排出处于高压状态或气态的流体。

    SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE
    6.
    发明申请
    SUPERCRITICAL DRYING METHOD FOR SEMICONDUCTOR SUBSTRATE 有权
    用于半导体基板的超临界干燥方法

    公开(公告)号：US20120118332A1

    公开(公告)日：2012-05-17

    申请号：US13052232

    申请日：2011-03-21

    申请人： Yohei SATO ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    发明人： Yohei SATO ,  Hisashi Okuchi ,  Hiroshi Tomita ,  Hidekazu Hayashi ,  Yukiko Kitajima

    IPC分类号： B08B3/10 ,  B08B7/00

    CPC分类号： H01L21/67034

    摘要： In one embodiment, after rinsing a semiconductor substrate having a fine pattern formed thereon with pure water, the pure water staying on the semiconductor substrate is substituted with a water soluble organic solvent, and then, the semiconductor substrate is introduced into a chamber in a state wet with the water soluble organic solvent. Then, the water soluble organic solvent is turned into a supercritical state by increasing a temperature inside of the chamber. Thereafter, the inside of the chamber is reduced in pressure while keeping the inside of the chamber at a temperature enough not to liquefy the pure water (i.e., rinsing pure water mixed into the water soluble organic solvent), and further, the water soluble organic solvent in the supercritical state is changed into a gaseous state, to be discharged from the chamber, so that the semiconductor substrate is dried.

    摘要翻译： 在一个实施方案中，在用纯水冲洗其上形成有精细图案的半导体衬底之后，将残留在半导体衬底上的纯水用水溶性有机溶剂代替，然后将半导体衬底引入到室中 用水溶性有机溶剂润湿。 然后，水溶性有机溶剂通过增加室内的温度而变成超临界状态。 此后，室内压力降低，同时保持室内不足液化纯水的温度（即冲洗混入水溶性有机溶剂中的纯水），此外，水溶性有机溶剂 处于超临界状态的溶剂变成气态，从室排出，使得半导体基板干燥。

    Supercritical drying method for semiconductor substrate
    9.
    发明授权
    Supercritical drying method for semiconductor substrate 有权
    半导体衬底的超临界干燥方法

    公开(公告)号：US09437416B2

    公开(公告)日：2016-09-06

    申请号：US13231956

    申请日：2011-09-13

    申请人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    发明人： Hidekazu Hayashi ,  Hiroshi Tomita ,  Yukiko Kitajima ,  Hisashi Okuchi ,  Yohei Sato

    IPC分类号： F26B3/00 ,  H01L21/02 ,  H01L21/67

    CPC分类号： H01L21/02101 ,  H01L21/02068 ,  H01L21/67017 ,  H01L21/67034

    摘要： According to one embodiment, a supercritical drying method for a semiconductor substrate includes introducing a semiconductor substrate formed with a metal film into a chamber, the surface of the substrate being wet with alcohol, supplying a supercritical fluid of carbon dioxide into the chamber, setting a temperature inside the chamber to a predetermined temperature, to replace the alcohol on the semiconductor substrate with the supercritical fluid, and discharging the supercritical fluid and the alcohol from the chamber while keeping the temperature inside the chamber at the predetermined temperature, to lower a pressure inside the chamber. The predetermined temperature is not lower than 75° C. but lower than a critical temperature of the alcohol.

    摘要翻译： 根据一个实施例，半导体衬底的超临界干燥方法包括将形成有金属膜的半导体衬底引入腔室中，基底表面被醇润湿，将二氧化碳的超临界流体供应到腔室中， 在室内温度达到预定温度，用超临界流体替代半导体衬底上的醇，并且将超临界流体和醇从室中排出，同时将室内的温度保持在预定温度，以降低内部的压力 房间。 预定温度不低于75℃，但低于醇的临界温度。