公开(公告)号：US08987737B2

公开(公告)日：2015-03-24

申请号：US14003388

申请日：2012-03-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： H01L29/04 ,  C01B33/037 ,  C30B28/06 ,  C30B29/06 ,  H01L31/18 ,  C30B11/00 ,  H01L21/02

CPC分类号： H01L29/04 ,  C01B33/037 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

摘要翻译： 提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm， 由一件组成。 本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

公开(公告)号：US08512868B2

公开(公告)日：2013-08-20

申请号：US13499304

申请日：2010-10-28

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： B32B9/04 ,  B32B13/04 ,  C01B33/02

CPC分类号： C30B29/06 ,  C30B11/00 ,  C30B28/06 ,  C30B33/06

摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein the main plane orientation of polycrystalline silicon that is prepared by a unidirectional solidification/melting method is (311), and monocrystalline silicon is embedded in the polycrystalline silicon. The hybrid silicon wafer according to any one of claims 1 to 6, wherein the purity of the polycrystalline silicon portion excluding gas components is 6N or higher, the total amount of metal impurities is 1 wtppm or less, and, among the metal impurities, Cu, Fe, Ni, and Al are respectively 0.1 wtppm or less. Thus, a hybrid silicon wafer having the functions of both a polycrystalline silicon wafer and a monocrystalline silicon wafer is provided and the occurrence of polish bumps and macro-sized unevenness between the polycrystalline silicon and the monocrystalline silicon are prevented.

摘要翻译： 具有以下结构的硅晶片的混合硅晶片，其中通过单向凝固/熔融法制备的多晶硅的主平面取向为（311），单晶硅嵌入多晶硅中。 7.根据权利要求1〜6中任一项所述的复合硅晶片，其特征在于，除了气体成分以外的多晶硅部分的纯度为6N以上，金属杂质的总量为1重量ppm以下，在金属杂质中，Cu ，Fe，Ni，Al分别为0.1重量ppm以下。 因此，提供了具有多晶硅晶片和单晶硅晶片的功能的混合硅晶片，并且防止了多晶硅和单晶硅之间的抛光凸起和宏观尺寸的不均匀性的出现。

公开(公告)号：US20120009374A1

公开(公告)日：2012-01-12

申请号：US12832150

申请日：2010-07-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： B32B3/02 ,  B29D7/00 ,  C01B33/02

CPC分类号： C30B33/06 ,  C01B32/05 ,  C30B11/00 ,  C30B29/06 ,  Y10T428/21

摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

摘要翻译： 提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体 晶体部分。 另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭 硅和多晶硅，并从其中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

公开(公告)号：US08659022B2

公开(公告)日：2014-02-25

申请号：US13498992

申请日：2010-10-28

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： H01L29/04

CPC分类号： C30B29/06 ,  C30B29/605 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02598 ,  H01L21/02667

摘要： A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.

摘要翻译： 作为硅晶片的混合硅晶片，其具有通过单向凝固/熔融法制备的单晶硅嵌入到多晶硅中的结构。 使用通过单向凝固/熔融法制备的多晶部分的晶粒的纵向平面用作晶片平面，并且嵌入单晶硅，使得多晶部分的晶粒的纵向方向形成120°的角度 至150°相对于单晶硅的切割表面。 因此提供了包括多晶硅晶片和单晶晶片的功能的混合硅晶片。

公开(公告)号：US08647747B2

公开(公告)日：2014-02-11

申请号：US12832150

申请日：2010-07-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： B32B3/02 ,  B32B9/04 ,  B32B13/04 ,  C01B33/02 ,  B29D7/00

CPC分类号： C30B33/06 ,  C01B32/05 ,  C30B11/00 ,  C30B29/06 ,  Y10T428/21

摘要： Provided is a hybrid silicon wafer in which molten state polycrystalline silicon and solid state single-crystal silicon are mutually integrated, comprising fine crystals having an average crystal grain size of 8 mm or less at a polycrystalline portion within 10 mm from a boundary with a single-crystal portion. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein a columnar single-crystal silicon ingot is sent in a mold in advance, molten silicon is cast around and integrated with the single-crystal ingot to prepare an ingot complex of single-crystal silicon and polycrystalline silicon, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer.

摘要翻译： 提供了一种混合硅晶片，其中熔融状态的多晶硅和固态单晶硅相互整合，包括在与单个边界的边界10mm以内的多晶部分处具有8mm或更小的平均晶粒尺寸的细晶体 晶体部分。 另外提供了一种制造混合硅晶片的方法，其中预先在模具中输送柱状单晶硅锭，将熔融硅铸造并与单晶锭一体化以制备单晶锭锭 硅和多晶硅，并从其中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能。

公开(公告)号：US20130341622A1

公开(公告)日：2013-12-26

申请号：US14003388

申请日：2012-03-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： H01L29/04

CPC分类号： H01L29/04 ,  C01B33/037 ,  C30B11/00 ,  C30B28/06 ,  C30B29/06 ,  H01L21/02381 ,  H01L21/02433 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Provided is a polycrystalline silicon wafer produced by a melting and unidirectional solidification method, where the polycrystalline silicon wafer has a diameter of 450 mm or more, a thickness of 900 μm or more, and an average crystal grain size of 5 to 50 mm, and is made up of one piece. The present invention provides a large-sized polycrystalline silicon wafer having a wafer size of 450 mm or more, of which: mechanical properties are similar to those of monocrystalline silicon wafers; the crystal size is large; the surface roughness is low; the surface has a high cleanliness; the polished surface has less unevenness by having a definite crystal orientation; and the sag value is similar to that of monocrystalline silicon wafers.

摘要翻译： 提供了一种通过熔融和单向凝固方法制造的多晶硅晶片，其中多晶硅晶片的直径为450mm以上，厚度为900μm以上，平均晶粒尺寸为5〜50mm， 由一件组成。 本发明提供了具有450mm以上的晶片尺寸的大尺寸多晶硅晶片，其中：机械性能类似于单晶硅晶片; 晶体尺寸大; 表面粗糙度低; 表面清洁度高; 通过具有确定的晶体取向，抛光表面具有较小的不均匀性; 并且下垂值与单晶硅晶片相似。

公开(公告)号：US08252422B2

公开(公告)日：2012-08-28

申请号：US12832120

申请日：2010-07-08

申请人： Hiroshi Takamura ,  Ryo Suzuki

发明人： Hiroshi Takamura ,  Ryo Suzuki

IPC分类号： B32B9/04 ,  B32B13/04 ,  B32B3/02 ,  D04H1/20 ,  B29B9/06 ,  B29C59/00 ,  B29C67/00

CPC分类号： C30B29/06 ,  C30B33/06 ,  Y10T428/21 ,  Y10T428/24942

摘要： Provided is a hybrid silicon wafer made of a wafer comprised primarily of two or more types of concentric single-crystal silicon or polycrystalline silicon prepared by mutually integrating one in a molten state and another in a solid state, and having specific resistances that differ by two orders of magnitude or more. Additionally provided is a method of manufacturing a hybrid silicon wafer, wherein high specific resistance silicon or an ingot comprised primarily of silicon is disposed at a central portion or a decentered position in a crucible, a nugget or powdered silicon having a specific resistance that is lower by two orders of magnitude or more than the ingot is filled in a void part around the ingot in the crucible, the nugget or powdered silicon is selectively melted and integrated with the ingot to form a complex, and a wafer shape is cut out therefrom. The provided hybrid silicon wafer comprises the functions of both a polycrystalline silicon wafer and a single-crystal wafer, or two or more polycrystalline silicon wafers having different functions.

摘要翻译： 提供了由主要由两种或更多种类型的同心单晶硅或多晶硅组成的晶片制成的混合硅晶片，其通过将熔融状态中的一种以固态相互一体化的方式相互一体化，并且具有两个不同的电阻 数量级以上。 另外提供了一种制造混合硅晶片的方法，其中高电阻率硅或主要由硅组成的晶锭设置在坩埚，熔核或粉末状硅中的中心部分或偏心位置，其具有较低的电阻率 在坩埚内的锭周围的空隙部分填充两个数量级以上的块，将熔核或粉末状硅选择性地熔融并与锭结合，形成复合体，并从中切出晶片形状。 所提供的混合硅晶片包括多晶硅晶片和单晶晶片的功能，或者具有不同功能的两个或多个多晶硅晶片。

公开(公告)号：US20100187661A1

公开(公告)日：2010-07-29

申请号：US12668307

申请日：2008-07-04

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： H01L29/04

CPC分类号： C30B29/06 ,  C30B28/00 ,  H01L29/045

摘要： Provided is a sintered silicon wafer, wherein the ratio [I(220)/I(111) . . . (1)] of intensity of a (220) plane and intensity of a (111) plane measured by X-ray diffraction is 0.5 or more and 0.8 or less, and the ratio [I(311)/I(111) . . . (2)] of intensity of a (311) plane and intensity of a (111) plane is 0.3 or more and 0.5 or less. The provided sintered silicon wafer has a smooth surface in which its surface roughness is equivalent to a single crystal silicon.

摘要翻译： 提供了一种烧结硅晶片，其中[I（220）/ I（111）]的比率。 。 。 （220）面的强度的（1）]和通过X射线衍射测定的（111）面的强度为0.5以上且0.8以下，[I（311）/ I（111）]比。 。 。 （311）面的强度和（111）面的强度的平均值（2）]为0.3以上且0.5以下。 所提供的烧结硅晶片具有光滑表面，其表面粗糙度等同于单晶硅。

公开(公告)号：US20100330325A1

公开(公告)日：2010-12-30

申请号：US12668239

申请日：2008-07-04

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： H01L29/04 ,  C04B35/00

CPC分类号： C23C14/3414 ,  Y10T428/21 ,  Y10T428/268

摘要： Provided is a sintered silicon wafer in which the maximum crystal grain size is 20μm or less and the average crystal grain size is 1μm or more but not more than 10μm; specifically, provides is a sintered silicon wafer having the following mechanical properties measured by collecting a plurality of test samples from the sintered silicon wafer having a diameter of 400mm or more, namely, the average deflecting strength based on a three-point bending test of 20kgf/mm2 or more but not more than 50kgf/mm2, the average tensile strength of 5kgf/mm2 or more but not more than 20kgf/mm2, and the average Vickers hardness of Hv 800 or more but not more than Hv 1200. The provided sintered silicon wafer is a sintered compact wafer having a fixed strength and mechanical properties similar to those of single-crystal silicon even when it is a sintered silicon wafer of large-size disk shape.

摘要翻译： 提供了最大晶粒尺寸为20μm以下且平均结晶粒径为1μm以上且10μm以下的烧结硅晶片， 具体地，提供了具有以下机械特性的烧结硅晶片，其通过从直径为400mm以上的烧结硅晶片收集多个测试样品，即基于20kgf的三点弯曲试验的平均偏转强度来测量 / mm 2以上且50kgf / mm 2以下，平均抗拉强度为5kgf / mm2以上且20kgf / mm2以下，平均维氏硬度为Hv 800以上且Hv 1200以下。 硅晶片是具有与单晶硅相似的固定强度和机械性能的烧结致密晶片，即使是大尺寸圆盘形状的烧结硅晶片。

公开(公告)号：US20100016144A1

公开(公告)日：2010-01-21

申请号：US12522959

申请日：2008-07-04

申请人： Ryo Suzuki ,  Hiroshi Takamura

发明人： Ryo Suzuki ,  Hiroshi Takamura

IPC分类号： C04B35/565

CPC分类号： H01L21/02002

摘要： Provided is a sintered silicon wafer, wherein the volume ratio of silicon oxide contained in the wafer is 0.01% or more and 0.2% or less, the volume ratio of silicon carbide is 0.01% or more and 0.15% or less, and the volume ratio of metal silicide is 0.006% or less. Additionally provided is a sintered silicon wafer having a diameter of 400 mm or more and having the following mechanical properties (1) to (3) measured by collecting a plurality of test samples from the sintered silicon wafers: (1) average value of the deflecting strength based on a three-point bending test is 20 kgf/mm2 or more and 50 kgf/mm2 or less; (2) average value of the tensile strength is 5 kgf/mm2 or more and 20 kgf/mm2 or less; and (3) average value of the Vickers hardness is Hv 800 or more and Hv 1200 or less. Even in the case of a large disk-shaped sintered silicon wafer, it is possible to provide a sintered compact wafer having definite strength and similar mechanical properties as single crystal silicon.

摘要翻译： 提供了一种烧结硅晶片，其中晶片中所含的氧化硅的体积比为0.01％以上且0.2％以下，碳化硅的体积比为0.01％以上且0.15％以下，体积比 的金属硅化物为0.006％以下。 另外提供了直径为400mm以上并且具有通过从烧结硅晶片收集多个测试样品而测量的以下机械性能（1）至（3）的烧结硅晶片：（1）偏转的平均值 基于三点弯曲试验的强度为20kgf / mm 2以上且50kgf / mm 2以下; （2）拉伸强度的平均值为5kgf / mm 2以上且20kgf / mm 2以下; 和（3）维氏硬度的平均值为Hv 800以上，Hv为1200以下。 即使在大型盘状烧结硅晶片的情况下，也可以提供具有确定的强度和与单晶硅相似的机械性能的烧结致密晶片。