公开(公告)号：US5404018A

公开(公告)日：1995-04-04

申请号：US843172

申请日：1992-02-28

申请人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Akio Yamada ,  Nobuyuki Yasutake ,  Hisayasu Nishino

发明人： Hiroshi Yasuda ,  Yoshihisa Oae ,  Akio Yamada ,  Nobuyuki Yasutake ,  Hisayasu Nishino

IPC分类号： G03F7/20 ,  H01J37/317 ,  H01L21/027 ,  H01L21/30 ,  H01J3/26

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/30483 ,  H01J2237/31764

摘要： A charged particle beam exposure apparatus employs a main deflector made of electromagnetic coils and a subdeflector made of electrostatic deflection electrodes. An exposure method used for this apparatus is capable of shortening a wait time of the main deflector. The main deflector deflects a charged particle beam in a direction X, while the subdeflector deflects the beam around the deflecting position of the main deflector to expose an object to the beam. An area to be exposed on the object is divided into thin subfields such that the width, in an X-axis direction of each subfield, is approximately 1/3 the length in a Y-axis direction of the same.

摘要翻译： 带电粒子束曝光装置采用由电磁线圈制成的主偏转器和由静电偏转电极制成的子偏转器。 用于该装置的曝光方法能够缩短主导流板的等待时间。 主偏转器使方向X上的带电粒子束偏转，而子偏转器将光束偏转在主偏转器的偏转位置附近，以将物体暴露于光束。 要曝光在物体上的区域被划分为薄的子场，使得每个子场的X轴方向上的宽度大约为其Y轴方向上的长度的1/3。

公开(公告)号：US5965895A

公开(公告)日：1999-10-12

申请号：US964331

申请日：1997-11-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： A method for providing charged particle beam exposure onto an object having a plurality of chip areas with a plurality of aligning marks formed in correspondence to each of said chip areas. A charged particle beam is irradiated upon an object mounted on a mobile step based upon positions of the aligning marks. Actual positions of the alignment marks are detected and compared to the design positions of the alignment marks to determine approximate relationships which are used to calculate an actual position to perform exposure.

摘要翻译： 一种用于向具有多个芯片区域的物体提供带电粒子束曝光的方法，所述多个芯片区域具有与每个所述芯片区域对应形成的多个对准标记。 基于对准标记的位置，将带电粒子束照射在安装在移动台阶上的物体上。 检测对准标记的实际位置并与对准标记的设计位置进行比较，以确定用于计算执行曝光的实际位置的近似关系。

公开(公告)号：US5546319A

公开(公告)日：1996-08-13

申请号：US379712

申请日：1995-01-27

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector, a glitch waveform generated during a step change in the output or a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages or coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间切换电阻来减小放大器的输出阶跃变化期间的设定时间，在输出的阶跃变化期间产生的毛刺波形或D / 在放大器的前级的A转换器被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步长变化， 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标 在晶片区域和芯片区域中的转换。 为了校正电磁透镜的散光，设置两级或线圈，并将与偏转量相对应的电流提供给线圈。

公开(公告)号：US5721432A

公开(公告)日：1998-02-24

申请号：US670256

申请日：1996-06-20

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve in the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and deflector, a glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier, is anticipated and is canceled out with a correction waveform, after the output of the D/A converter has settled, this output is sample held and the step change is interpolated at a smoothing circuit, the deflection area is increased by positioning a electrostatic deflector offset around the optical axis relative to another electrostatic deflector, the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turn, and the alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过在放大器和偏转器之间的开关电阻来减小放大器的输出的阶跃变化期间的设定时间，在D / A的输出的阶跃变化期间产生的毛刺波形 转换器在放大器的前级被预期并且被校正波形抵消，在D / A转换器的输出已经稳定之后，该输出被采样保持，并且在平滑电路中内插步进变化，偏转 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加面积，通过添加一或两匝的辅助偏转线圈来改善主偏转的响应速度，并且通过组合坐标转换来缩小对准时间 在晶片区域和芯片区域。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5338939A

公开(公告)日：1994-08-16

申请号：US67108

申请日：1993-05-26

申请人： Hisayasu Nishino ,  Akio Yamada ,  Yoshihisa Oae ,  Hiroshi Yasuda

发明人： Hisayasu Nishino ,  Akio Yamada ,  Yoshihisa Oae ,  Hiroshi Yasuda

IPC分类号： H01J37/147 ,  H01J3/32

CPC分类号： H01J37/1472 ,  H01J2237/002 ,  H01J2237/14 ,  H01J2237/152 ,  H01J2237/3175

摘要： A charged particle beam exposure method deflects a charged particle beam in a deflection system which includes electromagnetic deflection coils and an electromagnetic lens. The charged particle beam exposure method includes controlling the deflection system based on deflection data, and blocking heat radiation from at least the electromagnetic deflection coils by a partition so as to prevent the heat radiation from reaching the electromagnetic lens and to prevent heat conduction to the electromagnetic lens by the partition.

摘要翻译： 带电粒子束曝光方法使带电粒子束偏转在包括电磁偏转线圈和电磁透镜的偏转系统中。 带电粒子束曝光方法包括基于偏转数据控制偏转系统，并且通过隔板阻挡来自至少电磁偏转线圈的热辐射，以防止热辐射到达电磁透镜并防止对电磁体的热传导 镜头由分区。

公开(公告)号：US5719402A

公开(公告)日：1998-02-17

申请号：US626906

申请日：1996-04-04

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Junichi Kai ,  Yoshihisa Oae ,  Hisayasu Nishino ,  Kiichi Sakamoto ,  Hidefumi Yabara ,  Isamu Seto ,  Masami Takigawa ,  Akio Yamada ,  Soichiro Arai ,  Tomohiko Abe ,  Takashi Kiuchi ,  Kenichi Miyazawa

IPC分类号： H01J37/153 ,  H01J37/302 ,  H01J37/317 ,  H01J37/12 ,  H01J37/141

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/153 ,  H01J37/3174 ,  H01J2237/1504

摘要： To improve the throughput of an exposure system, the setting time during a step change in the output of an amplifier is reduced by switching resistance between the amplifier and a deflector. A glitch waveform generated during a step change in the output of a D/A converter at the preceding stage of the amplifier is anticipated and is cancelled out with a correction waveform. After the output of the D/A converter has settled, this output is sample-held and the step change is interpolated with a smoothing circuit. The deflection area is increased by positioning an electrostatic deflector offset around the optical axis relative to another electrostatic deflector, and the response speed of the main deflection is improved by adding auxiliary deflection coils of one or two turns. The alignment time is reduced by combining the coordinate conversion in the wafer area and in the chip area. In order to correct the astigmatism of the electromagnetic lens, two stages of coils are provided and an electric current corresponding to the quantity of deflection is supplied to the coils.

摘要翻译： 为了提高曝光系统的吞吐量，通过放大器和偏转器之间的开关电阻来减小放大器的输出中的阶跃变化期间的设定时间。 预期在放大器的前级的D / A转换器的输出的阶跃变化期间产生的毛刺波形，并用校正波形抵消。 在D / A转换器的输出稳定之后，该输出被采样保持，并且用平滑电路内插阶跃变化。 通过相对于另一个静电偏转器定位围绕光轴的静电偏转器偏移来增加偏转区域，并且通过添加一匝或两匝的辅助偏转线圈来改善主偏转的响应速度。 通过组合晶片区域和芯片区域中的坐标转换来减少对准时间。 为了校正电磁透镜的散光，设置两级线圈，并将与偏转量相对应的电流供给到线圈。

公开(公告)号：US5382800A

公开(公告)日：1995-01-17

申请号：US39

申请日：1993-01-04

申请人： Hisayasu Nishino ,  Akio Yamada ,  Yoshihisa Oae ,  Hiroshi Yasuda

发明人： Hisayasu Nishino ,  Akio Yamada ,  Yoshihisa Oae ,  Hiroshi Yasuda

IPC分类号： G03F7/20 ,  H01J37/147 ,  H01L21/027 ,  H01L21/30 ,  H01J3/32

CPC分类号： H01J37/1472 ,  H01J2237/002 ,  H01J2237/14 ,  H01J2237/152 ,  H01J2237/3175

摘要： A charged particle beam exposure method for deflecting a charged particle beam in a deflection system which includes electromagnetic deflection coils, includes the steps of (a) controlling the deflection system based on deflection data, and (b) generating heat at least a vicinity of the electromagnetic deflection coils so as to compensate for a change in heat generated from the electromagnetic deflection coils.

摘要翻译： 一种用于使包含电磁偏转线圈的偏转系统中的带电粒子束偏转的带电粒子束曝光方法包括以下步骤：（a）基于偏转数据控制偏转系统，以及（b）至少产生热量 电磁偏转线圈，以补偿由电磁偏转线圈产生的热量变化。

公开(公告)号：US5444257A

公开(公告)日：1995-08-22

申请号：US319022

申请日：1994-10-06

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

IPC分类号： H01L21/027 ,  H01J37/153 ,  H01J37/00

CPC分类号： H01J37/153 ,  H01J2237/1504 ,  H01J2237/1532 ,  H01J2237/3175

摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

摘要翻译： 电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与 在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。

公开(公告)号：US5260579A

公开(公告)日：1993-11-09

申请号：US851400

申请日：1992-03-13

申请人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

发明人： Hiroshi Yasuda ,  Yasushi Takahashi ,  Kiichi Sakamoto ,  Akio Yamada ,  Yoshihisa Oae ,  Junichi Kai ,  Shunsuke Fueki ,  Kenichi Kawashima

IPC分类号： H01J37/09 ,  H01J37/317 ,  H01J37/302

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  H01J37/09 ,  H01J37/3177 ,  H01J2237/0435

摘要： A charged particle beam exposure system is directed to an exposure process of an electron beam for sequentially scanning an electron beam employing a blanking aperture array including a plurality of blanking apertures. The system facilitates re-focusing for compensation of focus error due to Coulumb effect and makes wiring the blanking aperture array easier. The system further allows exposure without an irradiation gap. The blanking aperture array 6 is formed with a plurality of said blanking apertures 62 arranged in a two-dimensional configuration. A control system 24 controls the blanking aperture array 62 to set the blanking aperture to the ON state where the charged particle beams pass through the blanking aperture and reach the object 19 to be exposed or the OFF state where the charged particle beams cannot reach the object 19 to be exposed. The other control system of the control means performs a control so that a plurality of said charged particle beams that have passed through different blanking apertures of said blanking aperture array overlaps and is irradiated a plurality of times onto the specified position or the peripheral position in the vicinity of the specified position of the object to be exposed to the charged particle beams.

公开(公告)号：US5631113A

公开(公告)日：1997-05-20

申请号：US435157

申请日：1995-05-05

申请人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

发明人： Takamasa Satoh ,  Hiroshi Yasuda ,  Akio Yamada ,  Junichi Kai ,  Yoshihisa Oae ,  Keiji Yamada ,  Toru Oshima

IPC分类号： H01L21/027 ,  H01J37/153 ,  G03L5/00 ,  H01J37/00

CPC分类号： H01J37/153 ,  H01J2237/1504 ,  H01J2237/1532 ,  H01J2237/3175

摘要： An electron-beam exposure system includes an astigmatic compensation circuit that increases a voltage applied across a pair of electrodes forming an electrostatic sub-deflector and simultaneously decreases a voltage applied across another pair of electrodes forming the same electrostatic sub-deflector with a same magnitude as in the case of increasing the voltage, wherein the magnitude of the voltage change is changed in response to the deflection of the electron-beam caused by a main deflector.

摘要翻译： 电子束曝光系统包括像散补偿电路，其增加施加在形成静电副偏转器的一对电极上的电压，并且同时降低施加在形成相同静电副偏转器的另一对电极上施加的电压，其具有与 在增加电压的情况下，其中电压变化的大小响应于由主偏转器引起的电子束的偏转而改变。