摘要:
An aqueous dispersion for chemical mechanical polishing contains water, a polyvinylpyrrolidone having a weight-average molecular weight exceeding 200,000, an oxidant, a protective film-forming agent and abrasive grains, the protective film-forming agent containing a first metal compound-forming agent which forms a water-insoluble metal compound, and a second metal compound-forming agent which forms a water-soluble metal compound. The aqueous dispersion is capable of uniformly and stably polishing a metal film at low friction without causing defects in a metal film and an insulating film.
摘要:
A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要:
A chemical mechanical polishing aqueous dispersion comprises a component (A) composed of abrasive grains, a component (B) composed of at least one of quinolinecarboxylic acid and pyridinecarboxylic acid, a component (C) composed of an organic acid other than quinolinecarboxylic acid and pyridinecarboxylic acid and a component (D) composed of an oxidizing agent, wherein a mass ratio (WB/WC) of the content (WB) of the component (B) to the content (WC) of the component (C) is not less than 0.01 and less than 2, and the concentration of an ammonia component composed of ammonia and ammonium ion is not more than 0.005 mol/litter. According to the chemical mechanical polishing aqueous dispersion, various layers to be processed can be polished with high efficiency, and a sufficiently planarized polished surface of high precision can be obtained.
摘要:
A method of manufacturing a semiconductor device uses a slurry for chemical polishing during the manufacturing process, the slurry containing polishing particles comprising colloidal particles whose primary particles have a diameter ranging from 5 to 30 nm, wherein the degree of association of the primary particles is 5 or less. This slurry for chemical mechanical polishing makes it possible to minimize erosion and scratching whenever a conductive material film is subjected to CMP treatment.
摘要:
The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.
摘要:
A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.
摘要:
It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要:
The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.
摘要:
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.
摘要:
A chemical mechanical polishing method, including: chemically and mechanically polishing a polishing target surface by continuously performing a first polishing step and a second polishing step having a polishing rate lower than a polishing rate of the first polishing step, a chemical mechanical polishing aqueous dispersion used in the first polishing step and the second polishing step being a mixture of an aqueous dispersion and an aqueous solution, and the polishing rate being changed between the first polishing step and the second polishing step by changing a mixing ratio of the aqueous dispersion and the aqueous solution.