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    Semiconductor memory device and method of manufacturing the same
    1.
    发明授权
    Semiconductor memory device and method of manufacturing the same 失效

    公开(公告)号：US07429508B2

    公开(公告)日：2008-09-30

    申请号：US11941776

    申请日：2007-11-16

    申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L21/8242

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
    半导体存储器件及其制造方法

    公开(公告)号：US20080076192A1

    公开(公告)日：2008-03-27

    申请号：US11941776

    申请日：2007-11-16

    申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L21/8239

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

    摘要翻译： 半导体存储器件包括具有第一区域和第二区域的半导体衬底，放置在半导体衬底的第一区域中的晶体管，在第一和第二区域中的晶体管上形成在半导体衬底上的第一绝缘膜， 形成在第一区域的第一绝缘膜上并与晶体管电连接的第一铁电电容器，形成在第一铁电电容器上方的第一和第二区域上的第一绝缘膜上方的氢阻挡膜， 并且电连接到第一铁电电容器，以及第二触点，其穿过第二区域中的氢阻挡膜并处于浮置状态。

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效

    公开(公告)号：US20080073684A1

    公开(公告)日：2008-03-27

    申请号：US11941791

    申请日：2007-11-16

    申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L27/105

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效

    公开(公告)号：US20080073683A1

    公开(公告)日：2008-03-27

    申请号：US11941755

    申请日：2007-11-16

    申请人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu HIDAKA ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L29/76

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

    Semiconductor device having ferroelectric capacitor structures
    5.
    发明授权
    Semiconductor device having ferroelectric capacitor structures 失效
    具有铁电电容器结构的半导体器件

    公开(公告)号：US5990507A

    公开(公告)日：1999-11-23

    申请号：US889470

    申请日：1997-07-08

    申请人： Hiroshi Mochizuki ,  Kumi Okuwada ,  Hiroyuki Kanaya ,  Osamu Hidaka ,  Susumu Shuto ,  Iwao Kunishima

    发明人： Hiroshi Mochizuki ,  Kumi Okuwada ,  Hiroyuki Kanaya ,  Osamu Hidaka ,  Susumu Shuto ,  Iwao Kunishima

    IPC分类号： H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113

    CPC分类号： H01L27/11507 ,  H01L21/76895 ,  H01L27/10852 ,  H01L27/11502 ,  H01L28/55

    摘要： A method of manufacturing a semiconductor apparatus comprises the steps of forming, on a surface of a semiconductor substrate, an MIS transistor including a drain region and a source region each formed of an impurity diffusion region, forming an insulation film on the semiconductor substrate after the MIS transistor has been formed, selectively forming contact holes in the insulation film, embedding, into the contact hole, a capacitor contact plug having a lower end which is in contact with one of the drain region and the source region of the MIS transistor, forming a ferroelectric capacitor having a lower electrode, a ferroelectric film and an upper electrode on the insulation film after the capacitor contact plug has been formed, and forming an electric wire for establishing a connection between the upper electrode of the ferroelectric capacitor and an upper surface of the capacitor contact plug.

    摘要翻译： 一种制造半导体器件的方法包括以下步骤：在半导体衬底的表面上形成包括漏区和源区的MIS晶体管，所述漏极区和源区各自由杂质扩散区形成，在所述半导体衬底之后形成绝缘膜 MIS晶体管已经形成，在绝缘膜中选择性地形成接触孔，将接触孔埋入电容器接触插塞中，该电容器接触插塞的下端与MIS晶体管的漏极区域和源极区域中的一个接触，形成 在形成电容器接触插塞之后，在绝缘膜上形成具有下电极，铁电体膜和上电极的铁电电容器，并且形成用于建立铁电电容器的上电极和上电极之间的连接的电线 电容器接触插头。

    Semiconductor memory device and method of manufacturing the same
    6.
    发明授权
    Semiconductor memory device and method of manufacturing the same 失效

    公开(公告)号：US07402858B2

    公开(公告)日：2008-07-22

    申请号：US11941755

    申请日：2007-11-16

    申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

    IPC分类号： H01L29/76 ,  H01L29/94

    CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

    摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

    Semiconductor device including dummy upper electrode
    8.
    发明授权
    Semiconductor device including dummy upper electrode 失效
    半导体器件包括虚拟上电极

    公开(公告)号：US06611015B2

    公开(公告)日：2003-08-26

    申请号：US09956001

    申请日：2001-09-20

    申请人： Tohru Ozaki ,  Iwao Kunishima ,  Toyota Morimoto ,  Hiroyuki Kanaya

    发明人： Tohru Ozaki ,  Iwao Kunishima ,  Toyota Morimoto ,  Hiroyuki Kanaya

    IPC分类号： H01L27108

    CPC分类号： H01L27/11502 ,  H01L27/11507

    摘要： A semiconductor memory device including a memory cell block having a plurality of memory transistors formed on a semiconductor substrate. The memory transistors include first and second impurity-diffused regions and a gate formed therebetween. A plurality of memory cells are also included in the memory cell block and have lower electrodes connected to the first impurity-diffused regions, ferroelectric films formed on the lower electrodes and first upper electrodes formed on the ferroelectric films and connected to the second impurity-diffused regions. Further included are block selecting transistors formed on the semiconductor substrate and being connected to one end of the memory cell block. Second upper electrodes are also formed adjoined to the block selecting transistors and being disconnected from the first upper electrode of the memory cells.

    摘要翻译： 一种半导体存储器件，包括具有形成在半导体衬底上的多个存储晶体管的存储单元块。 存储晶体管包括第一和第二杂质扩散区域以及在它们之间形成的栅极。 多个存储单元也包括在存储单元块中，并且具有连接到第一杂质扩散区的下电极，形成在下电极上的铁电膜和形成在铁电体膜上的第一上电极并连接到第二杂质扩散区 地区。 还包括形成在半导体衬底上并连接到存储单元块的一端的块选择晶体管。 第二上电极也形成为与块选择晶体管相邻并且与存储单元的第一上电极断开连接。

    Semiconductor device and method for manufacturing the same
    9.
    发明授权
    Semiconductor device and method for manufacturing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US06586790B2

    公开(公告)日：2003-07-01

    申请号：US09359324

    申请日：1999-07-23

    申请人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki

    发明人： Hiroyuki Kanaya ,  Iwao Kunishima ,  Koji Yamakawa ,  Tsuyoshi Iwamoto ,  Hiroshi Mochizuki

    IPC分类号： H01L2976

    CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

    摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.

    摘要翻译： 提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。 铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。 上部铁电膜被金属化，并防止氢在下部铁电层中扩散。 堆叠的铁电体膜的晶粒优选不同。