公开(公告)号：US06653267B2

公开(公告)日：2003-11-25

申请号：US09893961

申请日：2001-06-29

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C11D328

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/04 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion for chemical mechanical polishing suitable for polishing of copper, which has a high polishing speed and a low erosion rate with overpolishing. The aqueous dispersion for chemical mechanical polishing of the invention contains a compound having a heterocycle, a surfactant and an oxidizing agent, wherein the compound having a heterocycle and the surfactant are in a weight ratio of 1:10 to 1:0.03. The aqueous dispersion may also contain abrasive particle. The compound having a heterocycle is preferably quinaldic acid, benzotriazole or the like. The surfactant is preferably a sulfonic acid salt such as potassium dodecylbenzenesulfonate or ammonium dodecylbenzenesulfonate, and the oxidizing agent is preferably ammonium persulfate, hydrogen peroxide or the like. The abrasive particle used may be inorganic particle such as colloidal silica, an organic particle such as polymer particle, or an organic/inorganic composite particle comprising a combination thereof.

公开(公告)号：US06454819B1

公开(公告)日：2002-09-24

申请号：US09484064

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Katsuya Okumura ,  Masayuki Motonari ,  Masayuki Hattori ,  Akira Iio

IPC分类号： C09K314

CPC分类号： C09K3/1463 ,  C08G83/001 ,  C08J3/128 ,  C08K3/36 ,  C08K5/057 ,  C08K2201/013 ,  C09G1/02 ,  C09K3/1436 ,  H01L21/02024 ,  H01L21/31053 ,  H01L21/3212

摘要： A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

摘要翻译： 一种用于化学机械抛光晶片上的工作薄膜的方法，该方法需要用含水和复合颗粒的水性分散体进行化学机械抛光，所述复合颗粒含有具有硅化合物部分或部分和 在聚合物颗粒上直接或间接形成的金属化合物部分或部分。

公开(公告)号：US06375545B1

公开(公告)日：2002-04-23

申请号：US09484252

申请日：2000-01-18

申请人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

发明人： Hiroyuki Yano ,  Gaku Minamihaba ,  Yukiteru Matsui ,  Nobuo Hayasaka ,  Katsuya Okumura ,  Akira Iio ,  Masayuki Hattori ,  Masayuki Motonari

IPC分类号： B24B100

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  H01L21/31053 ,  Y10S977/775 ,  Y10S977/888

摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

摘要翻译： 本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造 半导体器件使用它们。 本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。 另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。 聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。 无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。 将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。 并且通过使用CMP浆料制造半导体器件。

公开(公告)号：US07087530B2

公开(公告)日：2006-08-08

申请号：US10689680

申请日：2003-10-22

申请人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  C09K3/1463 ,  H01L21/31053

摘要： The invention provides an aqueous dispersion for chemical mechanical polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (silsesquioxane, fluorine-containing SiO2, polyimide-based resins, and the like.). When using the aqueous dispersion for chemical mechanical polishing of an interlayer insulating film with an elastic modulus of no greater than 20 GPa as measured by the nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the polishing surface. An aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine, salicylaldoxime, o-phenylenediamine, catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The abrasive may consist of inorganic particles, organic particles or organic/inorganic composite particles. The organic/inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, and the like in the presence of polymer particles of polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the polymer particles.

摘要翻译： 本发明提供了一种用于化学机械抛光的水分散体，即使使用具有小弹性模量的层间绝缘膜（倍半硅氧烷，含氟SiO 2，聚酰亚胺 - 基树脂等）。 当通过纳米压痕法测量的弹性模量不大于20GPa的层间绝缘膜的化学机械抛光使用水性分散体时，最大长度为1μm或更大的划痕数是不超过平均值 比抛光表面的0.01mm 2单位面积的5个。 根据本发明另一方面，用于CMP的水分散体或用于层间绝缘膜CMP的水性分散体含有防刮剂和研磨剂。 刮擦抑制剂可以是联苯酚，联吡啶基，2-乙烯基吡啶，水杨醛肟，邻苯二胺，邻苯二酚，7-羟基-5-甲基-1,3,4-三氮杂多卡因等。 研磨剂可以由无机颗粒，有机颗粒或有机/无机复合颗粒组成。 有机/无机复合颗粒可以通过在聚苯乙烯等的聚合物颗粒的存在下的烷氧基硅烷，烷氧基铝，烷氧基钛等的缩聚以及聚硅氧烷等的至少表面 的聚合物颗粒。

公开(公告)号：US06447695B1

公开(公告)日：2002-09-10

申请号：US09655305

申请日：2000-09-05

申请人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C09K1300

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer a and an insulating film under the same conditions, the ratio (RCu/RTa) between the polishing rate of the copper film (RCu) and the polishing rate of the tantalum layer and/or tantalum nitride layer (RTa) is no greater than 1/20, and the ratio (RCu/RIn) between the polishing rate of the copper film (RCu) and the polishing rate of the insulating film (RIn) is from 5 to ⅕. RCu/RTa is preferably no greater than {fraction (1/30)}, especially no greater than {fraction (1/40)} and most preferably no greater than {fraction (1/50)}, while RCu/RIn is preferably 4¼, especially 3⅓ and more preferably 2½.

摘要翻译： 本发明提供了一种用于化学机械抛光的水性分散组合物，其用于制造半导体器件，并且用于抛光形成在半导体衬底上的不同类型的工作膜和阻挡金属层，可以实现特别是阻挡金属表面的高效抛光 并可以给予适当扁平和高精度的成品表面。 用于化学机械抛光的水性分散组合物具有这样的特性，即在相同条件下对铜膜，钽层和/或氮化钽层a和绝缘膜进行研磨时，抛光速率之间的比（RCu / RTa） 铜膜（RCu）和钽层和/或氮化钽层（RTa）的研磨速度不大于1/20，铜膜（RCu）的研磨速度之比（RCu / RIn） 绝缘膜（RIn）的研磨速度为5〜 RCu / R a优选不大于{分数（1/30）}，特别是不大于{分数（1/40）}，最优选不大于{分数（1/50）}，而RCu / RIn优选 4¼，特别是3 1/3，更优选为2½。

公开(公告)号：US07153369B2

公开(公告)日：2006-12-26

申请号：US10200504

申请日：2002-07-23

申请人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： C23G1/14 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212 ,  Y10S134/902

摘要： It is an object of the invention to provide an aqueous dispersion for CMP that produces no scratches on polishing surfaces and that polishes with an adequate rate, when used for polishing of copper and the like. The aqueous dispersion of the invention contains water and polymer particles composed of a polymer with a specific functional group, and it may also contain a complexing agent, a compound that forms a passivation film on polishing surfaces and/or an oxidizing agent. The specific functional group is a functional group that can react with the metals of polishing surfaces or that can form a cation, and it is preferably selected from among amino, pyridyl and acrylamide groups. The polymer can be obtained using a initiator and/or monomer possessing the specific functional group. The polymer may also have a crosslinked structure.

公开(公告)号：US07183211B2

公开(公告)日：2007-02-27

申请号：US10349092

申请日：2003-01-23

申请人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000 Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.

摘要翻译： 本发明的目的是提供一种半导体衬底的化学机械抛光方法，该方法特别适用于化学机械抛光，具有布线图案的晶片和具有低介电常数的绝缘层形成在布线图案，中间层 在制造半导体器件的过程中的多层布线等的情况以及用于该工艺的化学机械抛光用水性分散体。 本发明的半导体基板的化学机械研磨方法是在将抛光垫固定在50〜200rpm的范围内的研磨台的旋转速度的条件下对半导体基板的被研磨面进行研磨， 通过使用包含研磨剂和至少一种选自多元羧酸的化合物的化合物机械抛光用水性分散体，将固定在研磨头上的研磨头的半导体衬底的压力压在700至18,000Pa的范围内 具有杂环和酸酐，以及抛光垫。

公开(公告)号：US06832949B2

公开(公告)日：2004-12-21

申请号：US10279843

申请日：2002-10-25

申请人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

发明人： Tomohisa Konno ,  Masayuki Motonari ,  Masayuki Hattori ,  Kou Hasegawa ,  Nobuo Kawahashi

IPC分类号： B24B500

CPC分类号： B24B37/205

摘要： An object of the present invention is to provide a window member for chemical mechanical polishing, which is excellent in antifouling property and transparency and is excellent in anti-scratching and, further, can easily perform detection of a polishing endpoint of the surface of a semiconductor wafer by passing a light for endpoint detection, in polishing of a semiconductor wafer using an optical endpoint detecting apparatus and also to a polishing pad. A window member for chemical mechanical polishing of the present invention is provided with a substrate part (comprised of polyurethane resin and the like), which is transparent partly at least, an antifouling resin layer formed on at least one side of the substrate part. This antifouling resin layer is preferably comprised of a fluorine-based polymer having a polysiloxane segment in a main chain. A polishing pad may be the one that a window member is fitted in a through hole of a substrate for a polishing pad (comprised of polyurethane resin and the like, disc-like, belt-like or the like) provided with a through hole penetrating from surface to back, or adhered to a substrate for a polishing pad so as to cover an opening part of the through hole.

摘要翻译： 本发明的目的是提供一种化学机械抛光用的窗构件，其防污性和透明性优异，抗划伤性优异，并且还可以容易地进行半导体表面的研磨终点的检测 使用光学终点检测装置对抛光用的半导体晶片进行端点检测的光，也可以使用抛光垫。 本发明的化学机械抛光用窗构件具有至少部分透明地形成在基板部的至少一侧上的防污树脂层的基板部（由聚氨酯树脂等构成）。 该防污树脂层优选由在主链中具有聚硅氧烷链段的氟系聚合物构成。 抛光垫可以是窗构件装配在用于抛光垫（由聚氨酯树脂等构成的盘状，带状等）的通孔的通孔中，该基板设置有贯通孔 或者粘附到用于抛光垫的基板上，以覆盖通孔的开口部分。

公开(公告)号：US06579153B2

公开(公告)日：2003-06-17

申请号：US09756193

申请日：2001-01-09

申请人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

发明人： Kazuhito Uchikura ,  Masayuki Motonari ,  Masayuki Hattori ,  Nobuo Kawahashi

IPC分类号： H01L21283

CPC分类号： C23F3/04 ,  C09G1/02 ,  H01L21/3212

摘要： There are provided aqueous dispersions for CMP that can efficiently polish both copper films and barrier metal films, which can give sufficient flattened finished surfaces without excessive polishing of insulating films, as well as a CMP process employing the aqueous dispersions. The aqueous dispersions for CMP according to the invention are characterized in that for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0.5≦RCu/RBM≦2, and the polishing rate ratio (RCu/RIn) of the copper film (RCu) and the insulating film (RIn) is such that 0.5≦RCu/RIn≦2. Other aqueous dispersions for CMP according to the invention are characterized in that they contain an abrasive, a heterocyclic compound, an organic acid and an oxidizing agent, and for polishing of a copper film, barrier metal film and insulating film under the same conditions, the polishing rate ratio (RCu/RBM) of the copper film (RCu) and the barrier metal film (RBM) is such that 0

摘要翻译： 提供了用于CMP的水性分散体，其可以有效地抛光铜膜和阻挡金属膜，这可以提供足够的平整的成品表面而不过度抛光绝缘膜，以及使用水分散体的CMP方法。 根据本发明的CMP水分散体的特征在于，在相同条件下对铜膜，阻挡金属膜和绝缘膜进行抛光，铜膜（RCu）和屏障（RCu）的抛光速率比（RCu / RBM） 金属膜（RBM）使得0.5 <= RCu / RBM <= 2，铜膜（RCu）和绝缘膜（RIn）的研磨速度比（RCu / RIn）使得0.5 <= RCu / RIn <= 2。 根据本发明的CMP的其它水分散体的特征在于它们含有研磨剂，杂环化合物，有机酸和氧化剂，并且在相同条件下用于抛光铜膜，阻挡金属膜和绝缘膜， 铜膜（RCu）和阻挡金属膜（RBM）的研磨速度比（RCu / RBM）为0

公开(公告)号：US06565767B2

公开(公告)日：2003-05-20

申请号：US09897129

申请日：2001-07-03

申请人： Masayuki Hattori ,  Masayuki Motonari ,  Akira Iio

发明人： Masayuki Hattori ,  Masayuki Motonari ,  Akira Iio

IPC分类号： C09K1300

CPC分类号： C09K3/1463 ,  C09G1/02 ,  C09K3/1436

摘要： The polymer particles of the invention are characterized by being obtained by polycondensation of at least one from among Compound 1 represented by general formula (1), its hydrolysates and its partial condensates, and at least one from among Compound 2 represented by general formula (2), its hydrolysates and its partial condensates, and by having a mean particle size of 3-1000 nm. M(OR1)z  (1) (R2)nM(OR3)z-n  (2) where M is Al, Si, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Zr, Nb, Mo, Sn, Sb, Ta, W, Pb or Ce; z is the atomic valence of M; R1 and R3 are each an alkyl group of 1-5 carbon atoms, an acyl group of 1-6 carbon atoms or an aryl group of 1-9 carbon atoms; R2 is a monovalent organic group of 1-8 carbon atoms; n is an integer of from 1 to (z−2); and R1, R2 and R3 may be the same or different. These particles are used in polishing compositions used for chemical mechanical polishing.

摘要翻译： 本发明的聚合物颗粒的特征在于通过由通式（1）表示的化合物1，其水解产物和其部分缩合物中的至少一种和通式（2）表示的化合物2中的至少一种缩合得到 ），其水解物及其部分缩合物，平均粒径为3-1000nm。其中，M为Al，Si，Ti，V，Cr，Mn，Fe，Co，Ni，Cu，Zn，Ge，Zr ，Nb，Mo，Sn，Sb，Ta，W，Pb或Ce; z是M的原子价; R1和R3分别是1-5个碳原子的烷基，1-6个碳原子的酰基或1-9个碳原子的芳基; R2是1-8个碳原子的一价有机基团; n为1〜（z-2）的整数。 并且R 1，R 2和R 3可以相同或不同。 这些颗粒用于用于化学机械抛光的抛光组合物中。