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公开(公告)号:US08290005B2
公开(公告)日:2012-10-16
申请号:US13212244
申请日:2011-08-18
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S3/13
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
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公开(公告)号:US20120002690A1
公开(公告)日:2012-01-05
申请号:US13212244
申请日:2011-08-18
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S3/13
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
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公开(公告)号:US08111723B2
公开(公告)日:2012-02-07
申请号:US12506713
申请日:2009-07-21
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S3/13
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 提供具有简单结构和配置的超短脉冲/超大功率激光二极管。 在驱动激光二极管的方法中,激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US20120002695A1
公开(公告)日:2012-01-05
申请号:US13212249
申请日:2011-08-18
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S5/02
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 提供具有简单结构和配置的超短脉冲/超大功率激光二极管。 在驱动激光二极管的方法中,激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US20100027573A1
公开(公告)日:2010-02-04
申请号:US12506713
申请日:2009-07-21
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S3/00
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 提供具有简单结构和配置的超短脉冲/超大功率激光二极管。 在驱动激光二极管的方法中,激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US08588264B2
公开(公告)日:2013-11-19
申请号:US13212249
申请日:2011-08-18
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S3/13
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 提供具有简单结构和配置的超短脉冲/超大功率激光二极管。 在驱动激光二极管的方法中,激光二极管由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US08116343B2
公开(公告)日:2012-02-14
申请号:US13047317
申请日:2011-03-14
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
IPC分类号: H01S5/00
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 超短脉冲/超大功率激光二极管,结构简单,结构简单。 激光二极管可以由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US20110164632A1
公开(公告)日:2011-07-07
申请号:US13047317
申请日:2011-03-14
申请人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
发明人: Hiroyuki Yokoyama , Shunsuke Kono , Tomoyuki Oki , Masao Ikeda , Takao Miyajima , Hideki Watanabe
CPC分类号: H01S5/06216 , H01S5/0428
摘要: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration. The laser diode can be driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
摘要翻译: 超短脉冲/超大功率激光二极管,结构简单,结构简单。 激光二极管可以由比阈值电流值高10倍或更多倍的脉冲电流来驱动。 脉冲电流的宽度优选为10纳秒以下,脉冲电流的值为0.4安培以上。
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公开(公告)号:US08442079B2
公开(公告)日:2013-05-14
申请号:US13035540
申请日:2011-02-25
申请人: Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
发明人: Tomoyuki Oki , Masaru Kuramoto , Masao Ikeda , Takao Miyajima , Hideki Watanabe , Hiroyuki Yokoyama
IPC分类号: H01S3/098
摘要: Provided is a driving method of a mode-locked semiconductor laser device comprising a laminated structure in which a first compound semiconductor layer, a third compound semiconductor layer having an emission region and a second compound semiconductor layer are successively laminated, a second electrode, and a first electrode. The laminated structure is formed on a compound semiconductor substrate having polarity, the third compound semiconductor layer includes a quantum well structure having a well layer and a barrier layer. The well layer has a depth of 1 nm or more and 10 nm or less. The barrier layer has an impurity doping density of 2×1018 cm−3 or more and 1×1020 cm−3 or less. An optical pulse is generated in the emission region by passing a current from the second electrode to the first electrode via the laminated structure.
摘要翻译: 提供了一种锁模半导体激光器件的驱动方法,其包括层叠结构,其中第一化合物半导体层,具有发射区域的第三化合物半导体层和第二化合物半导体层被连续层压,第二电极和 第一电极。 层叠结构形成在具有极性的化合物半导体基板上,第三化合物半导体层包括具有阱层和阻挡层的量子阱结构。 阱层的深度为1nm以上且10nm以下。 势垒层的杂质掺杂密度为2×1018cm-3以上且1×1020cm-3以下。 通过将电流从第二电极通过层压结构传递到第一电极,在发射区域中产生光脉冲。
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公开(公告)号:US20120002271A1
公开(公告)日:2012-01-05
申请号:US13166900
申请日:2011-06-23
申请人: Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
发明人: Masaru Kuramoto , Masao Ikeda , Rintaro Koda , Tomoyuki Oki , Hideki Watanabe , Takao Miyajima , Hiroyuki Yokoyama
IPC分类号: H01S3/00
CPC分类号: H01S5/1064 , H01S5/0425 , H01S5/0602 , H01S5/0657 , H01S5/16 , H01S5/22 , H01S5/32341 , H01S5/34333 , H01S5/50
摘要: A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.
摘要翻译: 半导体光放大器包括:依次包括由GaN化合物半导体构成的第一化合物半导体并具有第一导电类型的层压结构,具有由GaN化合物半导体构成的光放大区域的第三化合物半导体层和第二化合物半导体层 由GaN化合物半导体构成并具有第二导电类型; 形成在第二化合物半导体层上的第二电极; 和与第一化合物半导体层电连接的第一电极。 层叠结构具有脊形条纹结构。 当光输出端面中的棱条结构的宽度和光入射端面中的脊条纹结构的宽度分别为Wout时,满足Win,Wout> Win。 载体非注入区域沿着半导体光放大器的轴线从光输出端面设置在层叠结构的内部区域中。
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