公开(公告)号：US5367179A

公开(公告)日：1994-11-22

申请号：US975282

申请日：1992-11-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda ,  Junji Shiota

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786 ,  H01L23/48

CPC分类号： H01L21/0217 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on an insulating substrate, a gate insulating film covering the gate electrode and the insulating substrate, an i-type semiconductor layer formed on the gate insulating film, and a source electrode and a drain electrode electrically connected to two ends of the i-type semiconductor layer, respectively. The gate electrode is made of aluminum alloy containing high-melting-point metal such as Ti and Ta and oxygen or nitrogen or both.

摘要翻译： 薄膜晶体管包括形成在绝缘基板上的栅极电极，覆盖栅极电极和绝缘基板的栅极绝缘膜，形成在栅极绝缘膜上的i型半导体层，以及电极和漏极电极 分别连接到i型半导体层的两端。 栅电极由含有Ti和Ta等高熔点金属和氧或氮的铝合金构成。

公开(公告)号：US5243202A

公开(公告)日：1993-09-07

申请号：US4641

申请日：1993-01-12

申请人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

发明人： Hisatoshi Mori ,  Syunichi Sato ,  Naohiro Konya ,  Ichiro Ohno ,  Hiromitsu Ishii ,  Kunihiro Matsuda

IPC分类号： H01L21/316 ,  H01L21/318 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L29/49 ,  H01L29/786

CPC分类号： H01L21/0217 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02266 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/3185 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78663

摘要： A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.

摘要翻译： 薄膜晶体管包括形成在玻璃基板上的栅极电极，基本上在基板的整个表面上形成以覆盖栅电极的栅极绝缘膜，将栅极绝缘膜上的非单晶硅半导体膜， 覆盖栅电极; 以及在半导体膜上间隔规定距离并与半导体膜电连接的漏电极和源电极，以形成晶体管的沟道区。 栅电极由含钛的铝制成。

公开(公告)号：US4975168A

公开(公告)日：1990-12-04

申请号：US339474

申请日：1989-04-17

申请人： Ichiro Ohno ,  Junji Shiota ,  Hidetaka Uchiumi

发明人： Ichiro Ohno ,  Junji Shiota ,  Hidetaka Uchiumi

IPC分类号： C23C14/08 ,  C23C14/00 ,  C23C14/34 ,  C23C14/54 ,  H01J37/32

CPC分类号： H01J37/3244 ,  C23C14/0042 ,  C23C14/547

摘要： A method of forming a transparent conductive thin film by sputtering includes the step of placing a target consisting of a conductive oxide material and a substrate on which the thin film is to be formed in a pressure vessel, the step of supplying argon gas and oxygen gas after the pressure vessel is substantially evacuated, the step of supplying a sputtering current to the target to maintain a discharge state, the step of detecting the partial pressure of oxygen in the gas mixture in the pressure chamber, and the step of controlling the flow rate of oxygen gas. The flow rate of the oxygen gas is controlled by a control unit such that the value of the partial pressure of oxygen which is detected in the partial pressure detection step is always kept constant.

摘要翻译： 通过溅射形成透明导电薄膜的方法包括将由导电氧化物材料构成的靶和在其上形成薄膜的基板放置在压力容器中的步骤，提供氩气和氧气的步骤 在压力容器基本抽真空之后，向靶提供溅射电流以维持放电状态的步骤，检测压力室中的气体混合物中的氧分压的步骤和控制流量的步骤 的氧气。 氧气的流量由控制单元控制，使得在分压检测步骤中检测到的氧的分压值总是保持恒定。

公开(公告)号：US5514259A

公开(公告)日：1996-05-07

申请号：US158821

申请日：1993-11-26

申请人： Junji Shiota ,  Ichiro Ohno ,  Hidetaka Uchiumi

发明人： Junji Shiota ,  Ichiro Ohno ,  Hidetaka Uchiumi

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/34

CPC分类号： H01J37/3405

摘要： A sputtering apparatus has a pressure resistant vessel, from which gas in discharged and into which gas for sputtering is supplied, a substrate disposed in the vessel to be formed with a film at one surface thereof, a target disposed oppositely to one surface of the substrate to be formed of a substance to become a material of the film, a magnet provided on the surface of the target oppositely to the substrate to generate a magnetic field for confining a plasma in the vicinity of the surface of the target opposed to the substrate, a plate-shaped anode disposed between the substrate and the target to be formed with an opening of the shape in which at least one side is larger than the profile of the substrate at a position opposed to the substrate, and a sputtering current supplier between the anode and the target. The anode is made of a conductor. An opening larger than the profile of the substrate is formed at a position of the anode opposed to the substrate.

摘要翻译： 溅射装置具有耐压容器，从其中排出的气体和用于溅射的气体被供应到设置在容器中的基板，以在其一个表面形成膜，与基板的一个表面相对设置的靶 由成为该材料的物质形成，与该基板相对地设置在该靶的表面上的磁体，以产生用于将等离子体限制在与该基板相对的靶的表面附近的磁场， 设置在所述基板和所述靶材之间的板状阳极，以形成所述形状的开口，其中至少一侧比所述基板的与所述基板相对的位置处的所述基板的轮廓大，以及所述溅射电流供应器 阳极和目标。 阳极由导体制成。 在与基板相对的阳极的位置处形成大于基板的轮廓的开口。

公开(公告)号：US5539551A

公开(公告)日：1996-07-23

申请号：US168644

申请日：1993-12-16

申请人： Tsutomu Nomoto ,  Hideki Kamada ,  Ichiro Ohno

发明人： Tsutomu Nomoto ,  Hideki Kamada ,  Ichiro Ohno

IPC分类号： H01L27/12 ,  G02F1/136 ,  G02F1/1343 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L27/12

摘要： A plurality of address wiring layers and a plurality of data wiring layers are arranged to cross each other at a right angle. TFTs are respectively arranged at the intersections between the address wiring layers and the data wiring layers. The gate electrode of each TFT is connected to an address wiring layer for each row. The drain electrode of each TFT is connected to a data wiring layer for each column. Display electrodes are respectively arranged in the regions defined by the address wiring layers and the data wiring layers, and are connected to the source electrodes of the TFTs arranged in the respective regions. The data wiring layers and the source and drain electrodes of the TFTs each comprise the first layer serving as an ohmic barrier layer for a semiconductor layer, the second layer forming of a conductive material and serving as a main signal wiring layer, and the third layer serving as a battery reaction preventing layer.

摘要翻译： 多个地址布线层和多​​个数据布线层被布置成以直角彼此交叉。 TFT分别布置在地址布线层和数据布线层之间的交点处。 每个TFT的栅电极连接到每行的地址布线层。 每个TFT的漏电极连接到每列的数据布线层。 显示电极分别布置在由地址布线层和数据布线层限定的区域中，并且连接到布置在各个区域中的TFT的源电极。 TFT的数据布线层和源电极和漏电极各自包括用作半导体层的欧姆阻挡层的第一层，导电材料的第二层形成并用作主信号布线层，第三层 用作电池反应防止层。