公开(公告)号：US12230471B2

公开(公告)日：2025-02-18

申请号：US17788556

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Aida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Hitoshi Kamoshida

IPC: H01J37/24 ,  H01J37/08 ,  H01J37/244 ,  H01J37/30 ,  H01J37/305

Abstract: There is provided an ion milling apparatus that can enhance reproducibility of ion distribution.
The ion milling apparatus includes an ion source 101, a sample stage 102 on which a sample processed by radiating a non-convergent ion beam from the ion source 101 is placed, a drive unit 107 that moves a measurement member holding section 106 holding an ion beam current measurement member 105 along a track located between the ion source and the sample stage, and an electrode 112 that is disposed near the track, in which a predetermined positive voltage is applied to the electrode 112, the ion beam current measurement member 105 is moved within a radiation range of the ion beam by the drive unit 107, in a state in which the ion beam is output from the ion source 101 under a first radiation condition, and an ion beam current that flows when the ion beam is radiated to the ion beam current measurement member 105 is measured.

公开(公告)号：US12224155B2

公开(公告)日：2025-02-11

申请号：US17788610

申请日：2019-12-24

Applicant: Hitachi High-Tech Corporation

Inventor： Shota Aida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Hitoshi Kamoshida

IPC: H01J37/305 ,  H01J37/20

Abstract: Provided is an ion milling apparatus capable of enhancing reproducibility of an ion distribution. The ion milling apparatus includes: an ion source 101; a sample stage 102 on which a sample to be processed by being irradiated with an unfocused ion beam from the ion source 101 is placed; and a measurement member holding unit 106 that holds an ion beam current measurement member 105. A covering material 120 is provided so as to cover at least a surface of the measurement member holding unit 106 and the sample stage 102 facing the ion source 101. A material of the covering material 120 contains, as a main component, an element having an atomic number smaller than that of an element of a material of a structure on which the covering material is provided. The ion beam current measurement member 105 is moved in an irradiation range of the ion beam on a trajectory, which is located between the ion source and the sample stage, in a state where the ion beam is output from the ion source 101 under a first irradiation condition, and an ion beam current flowing when the ion beam current measurement member 105 is irradiated with the ion beam is measured.

公开(公告)号：US11742178B2

公开(公告)日：2023-08-29

申请号：US17637728

申请日：2019-08-23

Applicant: Hitachi High-Tech Corporation

Inventor： Hitoshi Kamoshida ,  Hisayuki Takasu ,  Atsushi Kamino ,  Shota Aida ,  Megumi Nakamura

IPC: H01J37/305 ,  H01J37/08 ,  H01J37/20 ,  H01J37/304

CPC classification number: H01J37/3056 ,  H01J37/08 ,  H01J37/20 ,  H01J37/304 ,  H01J2237/026 ,  H01J2237/20207 ,  H01J2237/24535

Abstract: The invention provides an ion milling device capable of cross-sectional milling on an all-solid-state battery while reducing an occurrence of a short circuit due to a redeposition film. The ion milling device includes a sample stage 5 on which a sample 8 is placed, an ion source 1 configured to emit an unfocused ion beam 4 toward the sample, a stage controller 6 configured to cause the sample stage to perform a swing operation centered on a swing axis S0 set to be orthogonal to an ion beam center B0 of the ion beam, and cause the sample stage to perform a sliding operation along a line of intersection between a plane (YZ plane) including the ion beam center and perpendicularly intersecting the swing axis and a sample placement surface of the sample stage, in which the stage controller causes, in a first mode operation, the sample stage to perform the swing operation and the ion source to emit the ion beam to mill the sample, and causes in a second mode operation, the sample stage to perform the sliding operation and the ion source to emit the ion beam to remove sputter particles adhered again to the sample in the first mode operation.