公开(公告)号：US10692695B2

公开(公告)日：2020-06-23

申请号：US16195155

申请日：2018-11-19

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man

IPC: H01J37/30 ,  H01J37/20 ,  H01J37/244 ,  H01J37/22 ,  H01J37/26 ,  H01L21/66

Abstract: Provided is a cross-section processing observation method capable of easily and accurately forming a cross-section used to observe a sample's inside, and a cross-section processing observation apparatus for cross-section processing. The method includes a design data acquisition step acquiring design data of a three-dimensional structure of a sample having three-dimensional structure, a moving step moving the sample based on coordinate information of the design data, a surface observation step acquiring an observation image of a surface of the sample, a cross-section forming step irradiating the sample's surface with an ion beam to form a cross-section of the three-dimensional structure, a cross-section observation step acquiring an observation image of the sample's cross-section, and a display step displaying image data, among pieces of the design data, of surface and cross section corresponding to respective locations of the surface and the cross section.

公开(公告)号：US09202671B2

公开(公告)日：2015-12-01

申请号：US14220981

申请日：2014-03-20

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man ,  Atsushi Uemoto ,  Tatsuya Asahata

IPC: H01J37/252 ,  H01J37/26 ,  H01J37/30

CPC classification number: H01J37/3002 ,  H01J37/252 ,  H01J37/26 ,  H01J37/304 ,  H01J37/3056 ,  H01J2237/30455

Abstract: A charged particle beam apparatus includes a sample stage, a focused ion beam column, a scattered electron detector that detects backscattered electrons generated from a cross-section of a sample, a crystal orientation information generation unit that generates crystal orientation information on a predetermined region of the cross-section, and an angle calculation unit that calculates attachment angles of the sample stage, corresponding to a direction of the cross-section. In response to receiving input of information indicating that the crystal orientation information on the region displayed on a display unit is changed to aimed second crystal orientation information, the angle calculation unit calculates the attachment angles corresponding to the direction of the cross-section for generating the second crystal orientation information, and the focused ion beam column performs etching processing on the cross-section at the calculated attachment angles.

Abstract translation: 带电粒子束装置包括：样品台，聚焦离子束柱，检测从样品的横截面产生的反向散射电子的散射电子检测器;晶体取向信息生成单元，其在预定区域上生成晶体取向信息; 横截面，以及角度计算单元，其计算与横截面方向对应的样品台的附着角度。 响应于接收到指示将显示在显示单元上的区域的晶体取向信息改变为目标第二晶体取向信息的信息的输入，角度计算单元计算与用于生成显示单元的横截面的方向相对应的附着角度 第二晶体取向信息，聚焦离子束列以计算出的安装角度对横截面进行蚀刻处理。

公开(公告)号：US10096449B2

公开(公告)日：2018-10-09

申请号：US15162133

申请日：2016-05-23

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man ,  Tatsuya Asahata ,  Atsushi Uemoto

IPC: H01J37/304 ,  H01J37/22 ,  G01N23/2202 ,  G01N23/2251 ,  G01N23/20091 ,  H01J37/305 ,  H01J37/28 ,  H01J37/29 ,  G01N1/32

Abstract: A cross-section processing-and-observation method includes: a cross-section exposure step of irradiating a sample with a focused ion beam to expose a cross-section of the sample; a cross-sectional image acquisition step of irradiating the cross-section with an electron beam to acquire a cross-sectional image of the cross-section; and a step of repeatedly performing the cross-section exposure step and the cross-sectional image acquisition step along a predetermined direction of the sample at a setting interval to acquire a plurality of cross-sectional images of the sample. In the cross-sectional image acquisition step, a cross-sectional image is acquired under different condition settings for a plurality of regions of the cross-section.

公开(公告)号：US09347896B2

公开(公告)日：2016-05-24

申请号：US14475046

申请日：2014-09-02

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man ,  Tatsuya Asahata ,  Atsushi Uemoto

IPC: G01N23/225 ,  H01J37/28 ,  H01J37/305 ,  G01N23/22 ,  G01N23/20 ,  G01N1/32

CPC classification number: H01J37/222 ,  G01N1/32 ,  G01N23/20091 ,  G01N23/2202 ,  G01N23/2251 ,  G01N2223/418 ,  H01J37/28 ,  H01J37/292 ,  H01J37/3053 ,  H01J37/3056 ,  H01J2237/2811 ,  H01J2237/31749

Abstract: A cross-section processing-and-observation method, including a cross-section exposure step in which a sample is irradiated with a focused ion beam to expose a cross-section of the sample, and a cross-sectional image acquisition step in which the cross-section is irradiated with an electron beam to acquire a cross-sectional image of the cross-section. The cross-section exposure step and the cross-sectional image acquisition step are repeatedly performed along a predetermined direction of the sample at a setting interval to acquire multiple cross-sectional images of the sample. The method also includes a specific observation target detection step in which a predetermined specific observation target from the cross-sectional image acquired a the cross-sectional image acquisition step is detected. In the specific observation target detection step, after a predetermined specific observation target is detected, the setting interval of the cross-section exposure step is set to be shorter than that before the specific observation target is detected.

Abstract translation: 一种截面处理和观察方法，包括横截面曝光步骤，其中用聚焦离子束照射样品以暴露样品的横截面;以及横截面图像获取步骤，其中， 横截面用电子束照射以获得横截面的横截面图像。 横截面曝光步骤和横截面图像获取步骤沿着样品的预定方向以设定间隔重复进行，以获得样品的多个横截面图像。 该方法还包括特定观察目标检测步骤，其中检测到获取截面图像的横截面图像中的预定特定观察目标。 在特定观察目标检测步骤中，在检测到预定的特定观察目标之后，将横截面曝光步骤的设定间隔设定为短于检测出特定观察对象之前的设定间隔。

公开(公告)号：US09260782B2

公开(公告)日：2016-02-16

申请号：US13842184

申请日：2013-03-15

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Xin Man ,  Ikuko Nakatani

IPC: B05D3/00 ,  C08J7/18 ,  C23C16/48 ,  C23C16/04 ,  H01J37/305

CPC classification number: C23C16/486 ,  C23C16/047 ,  H01J37/3056 ,  H01J2237/31745

Abstract: A sample preparation method includes processing a sample by an ion beam to form a thin film portion having a thickness that allows an electron beam to transmit therethrough; supplying deposition gas to the thin film portion; and irradiating the thin film portion with an electron beam to simultaneously form a deposition film on a front surface of the thin film portion and a deposition film on a rear surface of the thin film portion opposed to the front surface. The electron beam transmits through the thin film portion, generating secondary electrons from both the front and rear surfaces that decompose the deposition gas to form the deposition films.

Abstract translation: 样品制备方法包括通过离子束处理样品以形成具有允许电子束透射的厚度的薄膜部分; 向薄膜部分供应沉积气体; 并用电子束照射薄膜部分，同时在薄膜部分的前表面上形成沉积膜，并且在与前表面相对的薄膜部分的后表面上形成沉积膜。 电子束透过薄膜部分，从前表面和后表面产生分解沉积气体的二次电子以形成沉积膜。

公开(公告)号：US09046472B2

公开(公告)日：2015-06-02

申请号：US14025985

申请日：2013-09-13

Applicant: Hitachi High-Tech Science Corporation

Inventor： Xin Man ,  Toshiaki Fujii

IPC: H01J37/28 ,  G01N23/203

CPC classification number: G01N23/203

Abstract: A crystal analysis apparatus includes: a measurement data storage configured to store electron back-scattering pattern (EBSP) data measured at electron beam irradiation points on a plurality of cross-sections of a sample formed substantially in parallel at prescribed intervals; a crystal orientation database configured to accumulate therein information of crystal orientations corresponding to EBSPs; and a map constructing unit that constructs a three-dimensional crystal orientation map based on distribution of crystal orientations in normal directions of a plurality of faces of a polyhedral image having the cross-sections arranged at the prescribed intervals by reading out the crystal orientations in the normal directions of the faces from the crystal orientation database on the basis of the EBSP data stored in the measurement data storage.

Abstract translation: 晶体分析装置包括：测量数据存储器，被配置为存储在电子束照射点处测量的电子后向散射图案（EBSP）数据，所述数据基本上以规定间隔大致平行地形成的样品的多个横截面上; 晶体取向数据库，其被配置为在其中累积与EBSP对应的晶体取向的信息; 以及地图构造单元，其基于通过读出所述三维晶体取向图中的晶体取向，以基于以规定间隔布置的多面体图像的多个面的多个面的正交方向的分布来构造三维晶体取向图 根据存储在测量数据存储器中的EBSP数据，从晶体取向数据库的面的法线方向。

公开(公告)号：US08642980B2

公开(公告)日：2014-02-04

申请号：US13840311

申请日：2013-03-15

Applicant: Hitachi High-Tech Science Corporation

Inventor： Xin Man ,  Yo Yamamoto ,  Atsushi Uemoto ,  Tatsuya Asahata

IPC: G01N23/225 ,  H01J37/26 ,  H01J37/317

CPC classification number: H01J37/20 ,  H01J37/023 ,  H01J37/3005 ,  H01J2237/0245

Abstract: Provided is a composite charged particle beam apparatus, including: an electron beam column for irradiating a sample with an electron beam; an ion beam column for irradiating the sample with an ion beam to perform etching processing; a sample stage drive portion for moving a sample stage in an irradiation axis direction of the electron beam; and a column adjusting portion for moving the ion beam column relatively to a sample chamber such that the sample is irradiated with the ion beam at a position irradiated with the electron beam.

Abstract translation: 提供一种复合带电粒子束装置，包括：用于用电子束照射样品的电子束柱; 离子束柱，用离子束照射样品进行蚀刻处理; 用于在电子束的照射轴方向移动样品台的样品台驱动部分; 以及用于相对于样品室移动离子束柱的柱调节部分，使得样品在被电子束照射的位置处被离子束照射。

公开(公告)号：US11424100B2

公开(公告)日：2022-08-23

申请号：US17027312

申请日：2020-09-21

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Takuma Aso ,  Xin Man ,  Makoto Sato ,  Tatsuya Asahata

IPC: H01J37/26 ,  H01J37/28 ,  H01J37/244 ,  G01N23/2251 ,  G01N23/2206 ,  G01N23/2258

Abstract: The charged particle beam irradiation apparatus includes: a focused ion beam column; an electron beam column; an electron detector; an image forming unit configured to form an observation image based on a signal output from the electron detector; and a control unit configured to repeatedly perform exposure control in which the focused ion beam column is controlled to expose a cross section of a multilayered sample toward a stacking direction with the focused ion beam, the control unit being configured to perform, every time exposure of an observation target layer at a cross section of the multilayered sample is detected in a process of repeatedly performing the exposure control, observation control in which the electron beam column is controlled to radiate the electron beam, and the image forming unit is controlled to form an observation image of the cross section of the multilayered sample.

公开(公告)号：US09966226B2

公开(公告)日：2018-05-08

申请号：US14728004

申请日：2015-06-02

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Atsushi Uemoto ,  Xin Man ,  Tatsuya Asahata

IPC: G01N23/225 ,  H01J37/304 ,  H01J37/26 ,  H01J37/30 ,  G01N23/22 ,  G01N23/04 ,  G01T1/36 ,  H01J37/28 ,  G01N1/32

CPC classification number: H01J37/265 ,  G01N1/32 ,  G01N23/04 ,  G01N23/2208 ,  G01N23/225 ,  G01N23/2251 ,  G01N23/2255 ,  G01T1/36 ,  H01J37/28 ,  H01J37/3005 ,  H01J37/304 ,  H01J37/3045 ,  H01J2237/2611 ,  H01J2237/28 ,  H01J2237/2807 ,  H01J2237/2812 ,  H01J2237/30472 ,  H01J2237/30483 ,  H01J2237/31745 ,  H01J2237/31749

Abstract: A cross-section processing and observation method performed by a cross-section processing and observation apparatus comprises a cross-section processing step of forming a cross-section by irradiating a sample with an ion beam; a cross-section observation step of obtaining an observation image of the cross-section by irradiating the cross-section with an electron beam; and repeating the cross-section processing step and the cross-section observation step so as to obtain observation images of a plurality of cross-sections. In a case where Energy Dispersive X-ray Spectrometry (EDS) measurement of the cross-section is performed and an X-ray of a specified material or of a non-specified material that is different from a pre-specified material is detected, an irradiation condition of the ion beam is changed so as to obtain observation images of a plurality of cross-sections of the specified material, and the cross-section processing and observation of the specified material is performed.

公开(公告)号：US09934938B2

公开(公告)日：2018-04-03

申请号：US14224164

申请日：2014-03-25

Applicant: HITACHI HIGH-TECH SCIENCE CORPORATION

Inventor： Atsushi Uemoto ,  Xin Man ,  Tatsuya Asahata

IPC: H01J37/04 ,  H01J37/28 ,  H01J37/22 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/2255 ,  G01N2223/045 ,  H01J37/222 ,  H01J2237/226 ,  H01J2237/24585 ,  H01J2237/2804 ,  H01J2237/2806 ,  H01J2237/2807

Abstract: A focused ion beam apparatus includes a focused ion beam irradiation mechanism that forms first and second cross-sections in a sample. A first image generation unit generates respective first images, either reflected electron images or secondary electron images, of the first and second cross-sections, and a second image generation unit generates a second image that is an EDS image of the first cross-section. A control section generates a three-dimensional image of a specific composition present in the sample based on the first images and the second image.