公开(公告)号：US07816238B2

公开(公告)日：2010-10-19

申请号：US12137038

申请日：2008-06-11

申请人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

发明人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

IPC分类号： H01L21/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/406 ,  H01L29/045 ,  Y10S438/945 ,  Y10S438/973

摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

摘要翻译： 具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底 提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。 低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。 平面方向相对于主表面的法线矢量在偏角方向上倾斜。

公开(公告)号：US20080308815A1

公开(公告)日：2008-12-18

申请号：US12138441

申请日：2008-06-13

申请人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

发明人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

IPC分类号： H01L29/20 ,  B23B9/00 ,  H01L21/205

CPC分类号： C30B25/02 ,  C23C16/01 ,  C23C16/303 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639

摘要： Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.

摘要翻译： 提供可以制造增强发光效率的发光等半导体器件的GaN衬底，其中在GaN衬底主表面上形成外延层的外延衬底，半导体器件和制造方法 GaN衬底。 GaN衬底是具有相对于其法线向量的主表面的衬底，[0001]面取向在两个不同的偏轴方向上倾斜。

公开(公告)号：US20080308906A1

公开(公告)日：2008-12-18

申请号：US12137038

申请日：2008-06-11

申请人： Hideki OSADA ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

发明人： Hideki OSADA ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

IPC分类号： H01L29/20 ,  H01L21/20 ,  C01B21/06

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/406 ,  H01L29/045 ,  Y10S438/945 ,  Y10S438/973

摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

摘要翻译： 具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，工作寿命等改善的特性的发光元件的半导体器件，具有外延 提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。 低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。 平面方向相对于主表面的法线矢量在偏角方向上倾斜。

公开(公告)号：US20100032644A1

公开(公告)日：2010-02-11

申请号：US12307586

申请日：2008-03-28

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/06 ,  H01L21/0237 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/16 ,  H01L33/32

摘要： An active layer (17) is provided so as to emit light having an emission wavelength in the 440 nm to 550 nm band. A first-conductivity-type gallium nitride semiconductor region (13), the active layer (17), and a second-conductivity-type gallium nitride semiconductor region (15) are arranged along a predetermined axis (Ax). The active layer (17) includes a well layer composed of hexagonal InxGa1-xN (0.16≦x≦0.4, x: strained composition), with the indium fraction x represented by the strained composition. The m-plane of the hexagonal InxGa1-xN is oriented along the predetermined axis (Ax). The well-layer thickness is between greater than 3 nm and less than or equal to 20 nm. Having the well-layer thickness be over 3 nm makes it possible to fabricate light-emitting devices having an emission wavelength of over 440 nm.

摘要翻译： 提供有源层（17）以发射具有440nm至550nm波段的发射波长的光。 第一导电型氮化镓半导体区域（13），有源层（17）和第二导电型氮化镓半导体区域（15）沿预定轴线（Ax）布置。 活性层（17）包括由六方晶系In x Ga 1-x N（0.16 <= x <= 0.4，x：应变组成）构成的阱层，其中铟组分x由应变组合物表示。 六边形In x Ga 1-x N的m面沿预定轴线（Ax）取向。 阱层厚度大于3nm且小于或等于20nm。 具有超过3nm的阱层厚度使得可以制造发射波长超过440nm的发光器件。

公开(公告)号：US07973322B2

公开(公告)日：2011-07-05

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L29/00 ,  H01L21/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US20100059759A1

公开(公告)日：2010-03-11

申请号：US12440643

申请日：2008-04-17

申请人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

发明人： Katsushi Akita ,  Takashi Kyono ,  Keiji Ishibashi ,  Hitoshi Kasai

IPC分类号： H01L33/00

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/02 ,  H01L33/16 ,  H01L33/32 ,  H01S5/0202 ,  H01S5/2009 ,  H01S5/3202 ,  H01S5/3211 ,  H01S5/34333 ,  H01S2304/04

摘要： An active layer 17 is provided so as to emit light having a light emission wavelength in the range of 440 to 550 nm. A first conduction type gallium nitride-based semiconductor region 13, the active layer 17, and a second conduction type gallium nitride-based semiconductor region 15 are disposed in a predetermined axis Ax direction. The active layer 17 includes a well layer composed of hexagonal InXGa1-XN (0.16≦X≦0.35, X: strained composition), and the indium composition X is represented by a strained composition. The a-plane of the hexagonal InXGa1-XN is aligned in the predetermined axis Ax direction. The thickness of the well layer is in the range of more than 2.5 nm to 10 nm. When the thickness of the well layer is set to 2.5 nm or more, a light emitting device having a light emission wavelength of 440 nm or more can be formed.

摘要翻译： 提供有源层17以发射具有在440至550nm范围内的发光波长的光。 第一导电型氮化镓基半导体区域13，有源层17和第二导电型氮化镓基半导体区域15设置在预定的轴线方向。 有源层17包括由六方晶系InXGa1-XN（0.16＆nlE; X＆lt; EL; 0.35，X：应变组成）构成的阱层，铟组合物X由应变组成表示。 六边形InXGa1-XN的a平面在预定轴Ax方向上对准。 阱层的厚度在大于2.5nm至10nm的范围内。 当阱层的厚度设定为2.5nm以上时，可以形成发光波长为440nm以上的发光元件。

公开(公告)号：US20090212277A1

公开(公告)日：2009-08-27

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L33/00 ,  H01L21/20

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15 <= X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US07968864B2

公开(公告)日：2011-06-28

申请号：US12390036

申请日：2009-02-20

申请人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

发明人： Katsushi Akita ,  Hitoshi Kasai ,  Takashi Kyono ,  Kensaku Motoki

IPC分类号： H01L29/74 ,  H01L31/111

CPC分类号： H01L33/16 ,  B82Y20/00 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/06 ,  H01L33/32 ,  H01S5/34333

摘要： A group-III nitride light-emitting device is provided. An active layer having a quantum well structure is grown on a basal plane of a gallium nitride based semiconductor region. The quantum well structure is formed in such a way as to have an emission peak wavelength of 410 nm or more. The thickness of a well layer is 4 nm or more, and 10 nm or less. The well layer is composed of InXGa1-XN (0.15≦X

摘要翻译： 提供III族氮化物发光器件。 具有量子阱结构的有源层在氮化镓基半导体区域的基底面上生长。 量子阱结构形成为具有410nm以上的发光峰值波长。 阱层的厚度为4nm以上，10nm以下。 阱层由InXGa1-XN（0.15＆nlE; X <1，其中X是应变组成）组成。 氮化镓基半导体区域的基面相对于六边形系统的{0001}面或{000-1}面以15度以上且85度以下的倾斜角度倾斜 III族氮化物。 该范围内的基面是半极性平面。

公开(公告)号：US20080299694A1

公开(公告)日：2008-12-04

申请号：US12127286

申请日：2008-05-27

申请人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

发明人： Katsushi AKITA ,  Hitoshi Kasai ,  Yoshiki Miura ,  Kensaku Motoki

IPC分类号： H01L33/00

CPC分类号： H01S5/32341 ,  H01S5/0202 ,  H01S5/2201 ,  H01S5/3202 ,  H01S2301/173 ,  H01S2304/12

摘要： In a semiconductor laser manufacturing method, a GaN single-crystal substrate is formed by slicing a GaN bulk crystal, grown on a c-plane, parallel to an a-plane which is perpendicular to the c-plane. In this substrate, crystal defects extending parallel to the c-axis direction do not readily exert an influence, and degradation of element characteristics due to crystal defects can be suppressed. Further, because the a-plane is a nonpolar plane, improved light emission efficiency and longer wavelengths can be achieved compared with the c-plane, which is a polar plane. Hence a semiconductor laser manufacturing method of this invention enables further improvement of the element characteristics of the semiconductor laser to be fabricated.

摘要翻译： 在半导体激光器制造方法中，通过在与c面垂直的a面平行的c面上生长的GaN块状晶体来形成GaN单晶衬底。 在该基板中，与c轴方向平行延伸的晶体缺陷不容易产生影响，可以抑制由于晶体缺陷引起的元件特性的劣化。 此外，由于a平面是非极性平面，与作为极平面的c面相比，可以实现提高的发光效率和更长的波长。 因此，本发明的半导体激光器制造方法能够进一步提高要制造的半导体激光器的元件特性。

公开(公告)号：US08143140B2

公开(公告)日：2012-03-27

申请号：US12765357

申请日：2010-04-22

申请人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

发明人： Hitoshi Kasai ,  Akihiro Hachigo ,  Yoshiki Miura ,  Katsushi Akita

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L22/26 ,  H01L21/187 ,  H01L21/76251 ,  H01L29/2003 ,  H01L29/66462 ,  H01L33/0075 ,  H01L2924/0002 ,  H01L2924/00

摘要： There is provided a method of producing a thin GaN film-joined substrate, including the steps of: joining on a GaN bulk crystalline body a substrate different in type or chemical composition from GaN; and dividing the GaN bulk crystalline body at a plane having a distance of at least 0.1 μm and at most 100 μm from an interface thereof with the substrate different in type, to provide a thin film of GaN on the substrate different in type, wherein the GaN bulk crystalline body had a surface joined to the substrate different in type, that has a maximum surface roughness Rmax of at most 20 μm. Thus a GaN-based semiconductor device including a thin GaN film-joined substrate including a substrate different in type and a thin film of GaN joined firmly on the substrate different in type, and at least one GaN-based semiconductor layer deposited on the thin film of GaN, can be fabricated at low cost.

摘要翻译： 提供了一种制造薄GaN膜接合衬底的方法，包括以下步骤：将GaN体结构体与GaN的类型或化学组成不同的衬底接合; 并且将GaN本体结晶体在距离其不同类型的衬底的界面至少0.1μm至多100μm的平面处分割，以在衬底上提供类型不同的GaN薄膜，其中， GaN体结晶体具有与不同类型的基板接合的表面，其最大表面粗糙度Rmax至多为20μm。 因此，包括具有类型不同的衬底的薄GaN接合衬底和GaN的薄膜牢固地连接在不同类型的衬底上的GaN基半导体器件和沉积在薄膜上的至少一个GaN基半导体层 的GaN，可以以低成本制造。