公开(公告)号：US07816238B2

公开(公告)日：2010-10-19

申请号：US12137038

申请日：2008-06-11

申请人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

发明人： Hideki Osada ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

IPC分类号： H01L21/20

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/406 ,  H01L29/045 ,  Y10S438/945 ,  Y10S438/973

摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

摘要翻译： 具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，寿命等的改善的特性的发光元件的半导体器件，具有外延的衬底 提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。 低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。 平面方向相对于主表面的法线矢量在偏角方向上倾斜。

公开(公告)号：US20080308906A1

公开(公告)日：2008-12-18

申请号：US12137038

申请日：2008-06-11

申请人： Hideki OSADA ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

发明人： Hideki OSADA ,  Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Takashi Kyono ,  Katsushi Akita ,  Yoshiki Miura

IPC分类号： H01L29/20 ,  H01L21/20 ,  C01B21/06

CPC分类号： H01L29/2003 ,  C30B25/02 ,  C30B25/183 ,  C30B29/406 ,  H01L29/045 ,  Y10S438/945 ,  Y10S438/973

摘要： A GaN substrate having a large diameter of two inches or more by which a semiconductor device such as a light emitting element with improved characteristics such as luminance efficiency, an operating life and the like can be obtained at low cost industrially, a substrate having an epitaxial layer formed on the GaN substrate, a semiconductor device, and a method of manufacturing the GaN substrate are provided. A GaN substrate has a main surface and contains a low-defect crystal region and a defect concentrated region adjacent to low-defect crystal region. Low-defect crystal region and defect concentrated region extend from the main surface to a back surface positioned on the opposite side of the main surface. A plane direction [0001] is inclined in an off-angle direction with respect to a normal vector of the main surface.

摘要翻译： 具有两英寸以上的大直径的GaN衬底，通过该GaN衬底可以以低成本在工业上获得具有诸如亮度效率，工作寿命等改善的特性的发光元件的半导体器件，具有外延 提供了形成在GaN衬底上的层，半导体器件和制造GaN衬底的方法。 GaN衬底具有主表面并且包含低缺陷晶体区域和与低缺陷晶体区域相邻的缺陷集中区域。 低缺陷晶体区域和缺陷集中区域从主表面延伸到位于主表面相对侧的后表面。 平面方向相对于主表面的法线矢量在偏角方向上倾斜。

公开(公告)号：US20080308815A1

公开(公告)日：2008-12-18

申请号：US12138441

申请日：2008-06-13

申请人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

发明人： Hitoshi Kasai ,  Keiji Ishibashi ,  Seiji Nakahata ,  Katsushi Akita ,  Takashi Kyono ,  Yoshiki Miura

IPC分类号： H01L29/20 ,  B23B9/00 ,  H01L21/205

CPC分类号： C30B25/02 ,  C23C16/01 ,  C23C16/303 ,  C30B25/04 ,  C30B25/18 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02389 ,  H01L21/02395 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02639

摘要： Affords a GaN substrate from which enhanced-emission-efficiency light-emitting and like semiconductor devices can be produced, an epi-substrate in which an epitaxial layer has been formed on the GaN substrate principal surface, a semiconductor device, and a method of manufacturing the GaN substrate. The GaN substrate is a substrate having a principal surface with respect to whose normal vector the [0001] plane orientation is inclined in two different off-axis directions.

摘要翻译： 提供可以制造增强发光效率的发光等半导体器件的GaN衬底，其中在GaN衬底主表面上形成外延层的外延衬底，半导体器件和制造方法 GaN衬底。 GaN衬底是具有相对于其法线向量的主表面的衬底，[0001]面取向在两个不同的偏轴方向上倾斜。

公开(公告)号：US08192543B2

公开(公告)日：2012-06-05

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B21/02

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US08101968B2

公开(公告)日：2012-01-24

申请号：US13016497

申请日：2011-01-28

申请人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Akihiro Hachigo ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L33/00

CPC分类号： C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  H01L21/02024 ,  H01L33/16 ,  H01L33/32

摘要： A group III nitride substrate on which an epitaxially grown layer of good quality can be formed, and a method of manufacturing the same are obtained. A GaN substrate is one of the following: a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and the number of silicon atoms per square centimeter of the surface is not more than 3×1013; a group III nitride substrate, wherein the number of silicon atoms per square centimeter of a surface is not more than 3×1013, and a haze level of the surface is not more than 5 ppm; and a group III nitride substrate, wherein the number of atoms of an acid material per square centimeter of a surface is not more than 2×1014, and a haze level of the surface is not more than 5 ppm.

摘要翻译： 可以形成能够形成质量良好的外延生长层的III族氮化物衬底及其制造方法。 GaN衬底是以下之一：III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且每平方厘米表面的硅原子数 不超过3×1013; III族氮化物衬底，其中每平方厘米表面的硅原子数不大于3×1013，并且表面的雾度不大于5ppm; 和III族氮化物衬底，其中每平方厘米表面的酸性材料的原子数不大于2×1014，并且表面的雾度不大于5ppm。

公开(公告)号：US07854804B2

公开(公告)日：2010-12-21

申请号：US12216236

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B29/40

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1-d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

摘要翻译： 氮化物晶体的特征在于，结合由X射线衍射测量得到的氮化物晶体的任意特定平行晶格面的平面间隔，与X射线的X射线 满足特定平行晶格面的衍射条件，在由X射线穿透深度为0.3μm的平面间距d1获得的由| d1-d2 | / d2值表示的晶体的表面层处的均匀畸变 并且在X射线穿透深度为5μm的平面间距d2等于或低于2.1×10-3。 上述结构提供了具有晶体表面层的氮化物晶体，其直接可靠地评估而不破坏晶体，使得其可以以优选的方式用作半导体器件的衬底以及氮化物晶体衬底， 含氮化物晶体基板，半导体装置及其制造方法。

公开(公告)号：US20080271667A1

公开(公告)日：2008-11-06

申请号：US12216237

申请日：2008-07-01

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B23/00

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US07416604B2

公开(公告)日：2008-08-26

申请号：US11473122

申请日：2006-06-23

申请人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

发明人： Keiji Ishibashi ,  Tokiko Kaji ,  Seiji Nakahata ,  Takayuki Nishiura

IPC分类号： C30B25/12

CPC分类号： G01N23/207 ,  C30B25/186 ,  C30B25/20 ,  C30B29/38 ,  C30B29/403 ,  C30B29/406 ,  C30B33/00 ,  C30B33/10 ,  G01B15/08 ,  G01N2223/602 ,  G01N2223/634 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L22/12 ,  H01L29/04 ,  H01L29/045 ,  H01L29/2003 ,  Y10T428/2978

摘要： A nitride crystal is characterized in that, in connection with plane spacing of arbitrary specific parallel crystal lattice planes of the nitride crystal obtained from X-ray diffraction measurement performed with variation of X-ray penetration depth from a surface of the crystal while X-ray diffraction conditions of the specific parallel crystal lattice planes are satisfied, a uniform distortion at a surface layer of the crystal represented by a value of |d1−d2|/d2 obtained from the plane spacing d1 at the X-ray penetration depth of 0.3 μm and the plane spacing d2 at the X-ray penetration depth of 5 μm is equal to or lower than 2.1×10−3. The above configuration provides the nitride crystal having a crystal surface layer that is evaluated directly and reliably without breaking the crystal so that it can be used in a preferred fashion as a substrate for a semiconductor device as well as the nitride crystal substrate, an epilayer-containing nitride crystal substrate, a semiconductor device and a method of manufacturing the same.

公开(公告)号：US07915149B2

公开(公告)日：2011-03-29

申请号：US12136275

申请日：2008-06-10

申请人： Seiji Nakahata ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

发明人： Seiji Nakahata ,  Fumitaka Sato ,  Yoshiki Miura ,  Akinori Koukitu ,  Yoshinao Kumagai

IPC分类号： H01L21/00

CPC分类号： C30B25/00 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02581 ,  H01L21/0262 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/207

摘要： There is disclosed a method for forming a gallium nitride layer of which resistivity is 1×106 Ω·cm or more, including steps of: forming a gallium nitride layer containing iron on a substrate; and heating said gallium nitride layer formed on said substrate.

摘要翻译： 公开了形成电阻率为1×10 6Ω·cm·cm以上的氮化镓层的方法，包括以下步骤：在基板上形成含有铁的氮化镓层; 以及加热形成在所述衬底上的所述氮化镓层。

公开(公告)号：US20080014756A1

公开(公告)日：2008-01-17

申请号：US11822903

申请日：2007-07-11

申请人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

发明人： Keiji Ishibashi ,  Masato Irikura ,  Seiji Nakahata

IPC分类号： H01L21/461

CPC分类号： H01L21/02013 ,  B24B37/042 ,  H01L21/02027 ,  H01L21/6835 ,  H01L23/544 ,  H01L29/0657 ,  H01L2221/6834 ,  H01L2223/54493 ,  H01L2924/0002 ,  H01L2924/00

摘要： Quality of one-surface planar processed group 3 nitride wafers depends upon a direction of pasting of wafers on a polishing plate. Low surface roughness and high yield are obtained by pasting a plurality of group 3 nitride as-grown wafers on a polishing plate with OFs or notches facing forward (f), backward (b) or inward (u) with thermoplastic wax having a thickness of 10 μm or less, grinding the as-grown wafers, lapping the ground wafers, polishing the lapped wafers into mirror wafers with a bevel of a horizontal width of 200 μm or less and a vertical depth of 100 μm or less.

摘要翻译： 单面平面处理组3氮化物晶片的质量取决于晶片在抛光板上的粘贴方向。 通过将多个第3组氮化物生长的晶片粘贴在具有面向前（f），向后（b）或向内（u）的OF或凹槽的抛光板上，获得厚度为 研磨生长的晶片，研磨研磨的晶片，将研磨的晶片抛光成具有200μm或更小的水平宽度和100μm或更小的垂直深度的斜面的镜晶片。